KR100877028B1 - 고체촬상장치 및 그 제조방법 - Google Patents
고체촬상장치 및 그 제조방법 Download PDFInfo
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Abstract
Description
Claims (11)
- 웨이퍼(1)의 표면부에 다수의 수광부(2)와 각(各) 수광부의 하나하나에 마이크로 렌즈(3)가 형성되어 이루어지며, 상기 웨이퍼(1) 주변의 도처에 수광부(2)로의 전력공급이나 전기신호의 수수(授受)를 행하는 관통전극(4)이 설치되고, 이 관통전극(4)의 일단은 웨이퍼(1)의 표면부에서 수광소자로의 배선에 접속되는 전극패드(4a)에 접속되고, 타단은 이면전극(5)을 통해 배선에 접속됨과 동시에 상기 웨이퍼(1)의 표면은 마이크로 렌즈(3)를 둘러싸도록 사방에 배치한 격벽부로 되는 리브(7)가 설치되며, 리브(7)의 상면에 접착제로 광학 글라스 등의 투명판(8)이 부착되고, 상기 리브(7)와 상기 투명판(8)의 접합부에는, 보호틀(10)이 설치되어 이루어진 것을 특징으로 하는 고체촬상장치.
- 청구항 1에 있어서,보호틀(10)의 내측의 리브(7)와 투명판(8)의 접합부 근방에는, 오목부(11)가 형성되어 있는 것을 특징으로 하는 고체촬상장치.
- 청구항 1 또는 2에 있어서,상기 보호틀(10)은, 광 흡수체로 구성되어 있는 것을 특징으로 하는 고체촬상장치.
- 청구항 1 또는 2에 있어서,상기 투명판(8)과 상기 마이크로 렌즈(3)의 사이에는 상기 마이크로 렌즈(3)보다도 굴절률이 상대적으로 낮은 투명재료(23)가 설치되어 이루어진 것을 특징으로 하는 고체촬상장치.
- 청구항 4에 있어서,상기 마이크로 렌즈(3)는, 유기재료, 이산화실리콘막, 실리콘산 질화막, 및 실리콘나이트라이드막(膜)으로 이루어진 군으로부터 선택되는 무기절연막 또는, 산화 티탄, 산화 탄탈 및 산화 지르코늄으로 이루어진 군으로부터 선택되는 무기금속산화막에 의해 구성되어 있는 것을 특징으로 하는 고체촬상장치.
- 청구항 4 또는 5에 있어서,상기 투명재료(23)는, 내부에 미세한 구멍(空孔)을 분산하여 포함하는 열경화성의 투명수지, 이산화실리콘막, 포러스실리카막, 유기무기 하이브리드막 및 고분자화합물으로 이루어진 군으로부터 선택되는 투광성 저밀도 유전체 막이며, 마이크로 렌즈보다도 저굴절률인 것을 특징으로 하는 고체촬상장치.
- 청구항 6에 있어서,상기 투명재료(23)는, 복수의 적층막(膜)으로 구성되는 것을 특징으로 하는 고체촬상장치.
- 청구항 1 또는 4 기재의 고체촬상장치의 제조방법으로서,표면에 촬상소자를 형성하기 위한 확산공정을 행하기 전 또는 도중에 상기 웨이퍼(1) 표면에, 상기 관통전극(4)을 형성하기 위한 트렌치(16)를 형성하고,다음에, 상기 트렌치(16)가 형성된 상기 웨이퍼(1)에 대하여, 상기 확산공정을 실시하여 상기 웨이퍼(1)에 촬상소자와 관통전극(4)을 형성하고,다음에, 상기 확산공정을 거친 웨이퍼(1)에 대하여, 리브(7) 및 마이크로 렌즈(3)의 형성 및 투명판(8)의 형성을 행하고,다음에, 상기 웨이퍼(1)를 다이싱하여 개편화(個片化)하고, 상기 리브(7)와 상기 투명판(8)의 접합부에 보호틀을 설치하는 공정을 포함하고,상기 관통전극의 형성에 있어서, 미리 웨이퍼(1)의 이면에 반구면 형상의 홈(凹)(13)을 등방성 에칭에 의해 형성하고, 이 홈의 저부(底部)로부터 웨이퍼 표면의 전극(14)을 향하는 관통공(開口)을 드라이 에칭에 의해 형성하여, 관통전극(4)을 설치하는 것을 특징으로 하는 고체촬상장치의 제조방법.
- 청구항 1 또는 4 기재의 고체촬상장치의 제조방법으로서,표면에 촬상소자를 형성하기 위한 확산공정을 행하기 전 또는 도중에 상기 웨이퍼(1) 표면에, 상기 관통전극(4)을 형성하기 위한 트렌치(16)를 형성하고,다음에, 상기 트렌치(16)가 형성된 상기 웨이퍼(1)에 대하여, 상기 확산공정을 실시하여 상기 웨이퍼(1)에 촬상소자와 관통전극(4)을 형성하고,다음에, 상기 확산공정을 거친 웨이퍼(1)에 대하여, 리브(7) 및 마이크로 렌즈(3)의 형성 및 투명판(8)의 형성을 행하고,다음에, 상기 웨이퍼(1)를 다이싱하여 개편화하고, 상기 리브(7)와 상기 투명판(8)의 접합부에 보호틀을 설치하는 공정을 포함하고,상기 관통전극의 형성에 있어서, 미리 웨이퍼(1)의 이면에 지름이 큰 통형상의 홈(凹)(15)을 드라이 에칭으로 형성하고, 이 홈의 저부로부터 웨이퍼 표면을 향하는 지름이 작은 관통공(開口)을 형성하여, 이것을 통해서 관통전극(4)을 설치하는 것을 특징으로 하는 고체촬상장치의 제조방법.
- 청구항 1 또는 4 기재의 고체촬상장치의 제조방법으로서,표면에 촬상소자를 형성하기 위한 확산공정을 행하기 전 또는 도중에 상기 웨이퍼(1) 표면에, 상기 관통전극(4)을 형성하기 위한 트렌치(16)를 형성하고,다음에, 상기 트렌치(16)가 형성된 상기 웨이퍼(1)에 대하여, 상기 확산공정을 실시하여 상기 웨이퍼(1)에 촬상소자와 관통전극(4)을 형성하고,다음에, 상기 확산공정을 거친 웨이퍼(1)에 대하여, 리브(7) 및 마이크로 렌즈(3)의 형성 및 투명판(8)의 형성을 행하고,다음에, 상기 웨이퍼(1)를 다이싱하여 개편화하고, 상기 리브(7)와 상기 투명판(8)의 접합부에 보호틀을 설치하는 공정을 포함하고,상기 관통전극의 형성에 있어서, 촬상소자의 웨이퍼 프로세스의 범위 내에서, 미리, 웨이퍼(1)의 표면으로부터 트렌치(16)를 형성하여, 국소 산화막(17)을 형성하고, 또한 트렌치 내에 전극재료를 매설해 배선형성하여, 전극패드와 접속해 두며, 그 후, 이면으로부터 상기 트렌치(16) 내의 전극 하단까지 똑같이 기판을 박막화하는 것을 특징으로 하는 고체촬상장치의 제조방법.
- 청구항 1 또는 4 기재의 고체촬상장치의 제조방법으로서,표면에 촬상소자를 형성하기 위한 확산공정을 행하기 전 또는 도중에 상기 웨이퍼(1) 표면에, 상기 관통전극(4)을 형성하기 위한 트렌치(16)를 형성하고,다음에, 상기 트렌치(16)가 형성된 상기 웨이퍼(1)에 대하여, 상기 확산공정을 실시하여 상기 웨이퍼(1)에 촬상소자와 관통전극(4)을 형성하고,다음에, 상기 확산공정을 거친 웨이퍼(1)에 대하여, 리브(7) 및 마이크로 렌즈(3)의 형성 및 투명판(8)의 형성을 행하고,다음에, 상기 웨이퍼(1)를 다이싱하여 개편화하고, 상기 리브(7)와 상기 투명판(8)의 접합부에 보호틀을 설치하는 공정을 포함하고,상기 관통전극의 형성에 있어서, 촬상소자의 웨이퍼 프로세스의 범위 내에서, 미리, 웨이퍼(1)의 표면으로부터 트렌치(16)를 형성하여, 국소 산화막(17)을 형성하고, 또한 트렌치 내에 전극재료를 매설해 배선형성하여, 전극패드와 접속해 두고, 그 후, 이면으로부터 상기 트렌치(16)에 이르는 홈(凹)을 설치하고 이면 측에서도 관통전극을 형성하여, 접속하는 것을 특징으로 하는 고체촬상장치의 제조방법.
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Families Citing this family (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4804962B2 (ja) * | 2006-03-03 | 2011-11-02 | 富士通株式会社 | 撮像装置 |
KR100795922B1 (ko) * | 2006-07-28 | 2008-01-21 | 삼성전자주식회사 | 이미지 픽업 소자 및 이미지 픽업 소자의 제조방법 |
JP2008066679A (ja) * | 2006-09-11 | 2008-03-21 | Manabu Bonshihara | 固体撮像装置及びその製造方法 |
JP4695586B2 (ja) * | 2006-12-27 | 2011-06-08 | 三星電子株式会社 | 撮像装置、撮像方法 |
JP4884207B2 (ja) * | 2006-12-28 | 2012-02-29 | 三星電子株式会社 | 撮像装置、撮像方法およびコンピュータプログラム |
US8313971B2 (en) | 2007-01-30 | 2012-11-20 | Konica Minolta Opto, Inc. | Camera module manufacturing method and camera module |
DE202007001431U1 (de) * | 2007-01-31 | 2007-05-16 | Infineon Technologies Austria Ag | Halbleiteranordnung und Leistungshalbleiterbauelement |
JP2008219854A (ja) * | 2007-02-05 | 2008-09-18 | Matsushita Electric Ind Co Ltd | 光学デバイス,光学デバイスウエハおよびそれらの製造方法、ならびに光学デバイスを搭載したカメラモジュールおよび内視鏡モジュール |
US8013350B2 (en) | 2007-02-05 | 2011-09-06 | Panasonic Corporation | Optical device and method for manufacturing optical device, and camera module and endoscope module equipped with optical device |
KR100881458B1 (ko) * | 2007-02-23 | 2009-02-06 | 삼성전자주식회사 | 마이크로렌즈 보호패턴을 갖는 촬상소자, 카메라모듈, 및그 제조방법 |
JP2008235686A (ja) * | 2007-03-22 | 2008-10-02 | Matsushita Electric Ind Co Ltd | 光学デバイス、カメラモジュール、携帯電話、デジタルスチルカメラ、および医療用内視鏡スコープ |
KR100860308B1 (ko) * | 2007-06-05 | 2008-09-25 | 삼성전기주식회사 | 카메라 모듈 패키지 및 그 제조방법 |
JP2008305972A (ja) * | 2007-06-07 | 2008-12-18 | Panasonic Corp | 光学デバイス及びその製造方法、並びに、光学デバイスを用いたカメラモジュール及び該カメラモジュールを搭載した電子機器 |
JP2009016405A (ja) * | 2007-06-30 | 2009-01-22 | Zycube:Kk | 固体撮像装置 |
JP2009043772A (ja) * | 2007-08-06 | 2009-02-26 | Panasonic Corp | 固体撮像装置及びその製造方法 |
JP2009064839A (ja) * | 2007-09-04 | 2009-03-26 | Panasonic Corp | 光学デバイス及びその製造方法 |
JP2009092860A (ja) * | 2007-10-05 | 2009-04-30 | Panasonic Corp | カメラモジュールおよびカメラモジュールの製造方法 |
US7791159B2 (en) * | 2007-10-30 | 2010-09-07 | Panasonic Corporation | Solid-state imaging device and method for fabricating the same |
JP5197219B2 (ja) * | 2007-11-22 | 2013-05-15 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP4799543B2 (ja) * | 2007-12-27 | 2011-10-26 | 株式会社東芝 | 半導体パッケージ及びカメラモジュール |
JP4799542B2 (ja) * | 2007-12-27 | 2011-10-26 | 株式会社東芝 | 半導体パッケージ |
JP5171288B2 (ja) * | 2008-01-28 | 2013-03-27 | シャープ株式会社 | 固体撮像装置、固体撮像装置の実装方法、固体撮像装置の製造方法、および電子情報機器 |
JP5237648B2 (ja) * | 2008-02-05 | 2013-07-17 | スパンション エルエルシー | 半導体装置及びその製造方法 |
JP5344336B2 (ja) * | 2008-02-27 | 2013-11-20 | 株式会社ザイキューブ | 半導体装置 |
JP2009260269A (ja) * | 2008-03-18 | 2009-11-05 | Panasonic Corp | 光学デバイス及びその製造方法 |
JP5009209B2 (ja) * | 2008-03-21 | 2012-08-22 | シャープ株式会社 | ウエハ状光学装置およびその製造方法、電子素子ウエハモジュール、センサウエハモジュール、電子素子モジュール、センサモジュール、電子情報機器 |
JP2009283902A (ja) * | 2008-04-25 | 2009-12-03 | Panasonic Corp | 光学デバイスとこれを備えた電子機器 |
KR100935311B1 (ko) * | 2008-06-02 | 2010-01-06 | 삼성전기주식회사 | 웨이퍼 레벨 카메라 모듈 |
JP5505761B2 (ja) * | 2008-06-18 | 2014-05-28 | 株式会社リコー | 撮像装置 |
JP2010040672A (ja) * | 2008-08-01 | 2010-02-18 | Oki Semiconductor Co Ltd | 半導体装置およびその製造方法 |
JP2010040621A (ja) | 2008-08-01 | 2010-02-18 | Toshiba Corp | 固体撮像デバイス及びその製造方法 |
JP4799594B2 (ja) * | 2008-08-19 | 2011-10-26 | 株式会社東芝 | 固体撮像装置およびその製造方法 |
JP4966931B2 (ja) * | 2008-08-26 | 2012-07-04 | シャープ株式会社 | 電子素子ウエハモジュールおよびその製造方法、電子素子モジュールおよびその製造方法、電子情報機器 |
JP5317586B2 (ja) * | 2008-08-28 | 2013-10-16 | ラピスセミコンダクタ株式会社 | カメラモジュール及びその製造方法 |
US9675443B2 (en) | 2009-09-10 | 2017-06-13 | Johnson & Johnson Vision Care, Inc. | Energized ophthalmic lens including stacked integrated components |
JP2010114320A (ja) * | 2008-11-07 | 2010-05-20 | Panasonic Corp | 半導体装置 |
JP2010114390A (ja) * | 2008-11-10 | 2010-05-20 | Panasonic Corp | 半導体装置および半導体装置の製造方法 |
CN102132409A (zh) * | 2008-11-21 | 2011-07-20 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
CN102224579B (zh) * | 2008-11-25 | 2013-12-04 | 松下电器产业株式会社 | 半导体装置及电子设备 |
JP5820979B2 (ja) * | 2008-12-26 | 2015-11-24 | パナソニックIpマネジメント株式会社 | 固体撮像デバイス |
US8610815B2 (en) * | 2009-01-12 | 2013-12-17 | Aptina Imaging Corporation | Imaging device having microlens array adhered to wafer-level lens |
JP2010177568A (ja) * | 2009-01-30 | 2010-08-12 | Panasonic Corp | 半導体装置およびそれを用いた電子機器、ならびに半導体装置の製造方法 |
JP2010268099A (ja) * | 2009-05-13 | 2010-11-25 | Honda Motor Co Ltd | 車両用撮像装置および車両周辺監視装置 |
JP5489543B2 (ja) * | 2009-06-09 | 2014-05-14 | キヤノン株式会社 | 固体撮像装置 |
TW201104850A (en) * | 2009-07-29 | 2011-02-01 | Kingpak Tech Inc | Image sensor package structure with large air cavity |
JP5235829B2 (ja) * | 2009-09-28 | 2013-07-10 | 株式会社東芝 | 半導体装置の製造方法、半導体装置 |
JP5685898B2 (ja) * | 2010-01-08 | 2015-03-18 | ソニー株式会社 | 半導体装置、固体撮像装置、およびカメラシステム |
JP5162607B2 (ja) * | 2010-02-10 | 2013-03-13 | 株式会社AAC Technologies Japan R&D Center | カメラモジュールの組み立て方法 |
JP2012018993A (ja) * | 2010-07-06 | 2012-01-26 | Toshiba Corp | カメラモジュールおよびその製造方法 |
FI125379B (fi) * | 2010-10-25 | 2015-09-15 | Jot Automation Oy | Alusta |
US8950862B2 (en) | 2011-02-28 | 2015-02-10 | Johnson & Johnson Vision Care, Inc. | Methods and apparatus for an ophthalmic lens with functional insert layers |
US10451897B2 (en) | 2011-03-18 | 2019-10-22 | Johnson & Johnson Vision Care, Inc. | Components with multiple energization elements for biomedical devices |
US9698129B2 (en) | 2011-03-18 | 2017-07-04 | Johnson & Johnson Vision Care, Inc. | Stacked integrated component devices with energization |
US9914273B2 (en) | 2011-03-18 | 2018-03-13 | Johnson & Johnson Vision Care, Inc. | Method for using a stacked integrated component media insert in an ophthalmic device |
US9110310B2 (en) | 2011-03-18 | 2015-08-18 | Johnson & Johnson Vision Care, Inc. | Multiple energization elements in stacked integrated component devices |
US9804418B2 (en) | 2011-03-21 | 2017-10-31 | Johnson & Johnson Vision Care, Inc. | Methods and apparatus for functional insert with power layer |
KR101673363B1 (ko) * | 2011-05-06 | 2016-11-07 | 후지필름 가부시키가이샤 | 분산 조성물, 경화성 조성물, 조성물, 투명 필름, 마이크로렌즈, 고체 촬상 소자, 투명 필름의 제조 방법, 마이크로렌즈의 제조 방법 및 고체 촬상 소자의 제조 방법 |
US8857983B2 (en) | 2012-01-26 | 2014-10-14 | Johnson & Johnson Vision Care, Inc. | Ophthalmic lens assembly having an integrated antenna structure |
JP5813552B2 (ja) | 2012-03-29 | 2015-11-17 | 株式会社東芝 | 半導体パッケージおよびその製造方法 |
JP6108698B2 (ja) * | 2012-06-15 | 2017-04-05 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP6146976B2 (ja) * | 2012-09-24 | 2017-06-14 | オリンパス株式会社 | 撮像装置、該撮像装置を備える内視鏡 |
JP6054188B2 (ja) | 2013-01-30 | 2016-12-27 | 株式会社東芝 | 半導体パッケージおよびその製造方法 |
JP2015095546A (ja) * | 2013-11-12 | 2015-05-18 | 株式会社リコー | 撮像素子パッケージ及び撮像装置 |
US20150189204A1 (en) * | 2013-12-27 | 2015-07-02 | Optiz, Inc. | Semiconductor Device On Cover Substrate And Method Of Making Same |
JP6300029B2 (ja) | 2014-01-27 | 2018-03-28 | ソニー株式会社 | 撮像素子、製造装置、製造方法 |
CN103956368B (zh) * | 2014-05-20 | 2016-06-15 | 苏州科阳光电科技有限公司 | 晶圆级图像传感模块的封装结构 |
JP2015230896A (ja) * | 2014-06-03 | 2015-12-21 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
US9715130B2 (en) | 2014-08-21 | 2017-07-25 | Johnson & Johnson Vision Care, Inc. | Methods and apparatus to form separators for biocompatible energization elements for biomedical devices |
US10627651B2 (en) | 2014-08-21 | 2020-04-21 | Johnson & Johnson Vision Care, Inc. | Methods and apparatus to form biocompatible energization primary elements for biomedical devices with electroless sealing layers |
US9793536B2 (en) | 2014-08-21 | 2017-10-17 | Johnson & Johnson Vision Care, Inc. | Pellet form cathode for use in a biocompatible battery |
US10361404B2 (en) | 2014-08-21 | 2019-07-23 | Johnson & Johnson Vision Care, Inc. | Anodes for use in biocompatible energization elements |
US10381687B2 (en) | 2014-08-21 | 2019-08-13 | Johnson & Johnson Vision Care, Inc. | Methods of forming biocompatible rechargable energization elements for biomedical devices |
US9383593B2 (en) | 2014-08-21 | 2016-07-05 | Johnson & Johnson Vision Care, Inc. | Methods to form biocompatible energization elements for biomedical devices comprising laminates and placed separators |
US9599842B2 (en) | 2014-08-21 | 2017-03-21 | Johnson & Johnson Vision Care, Inc. | Device and methods for sealing and encapsulation for biocompatible energization elements |
US10361405B2 (en) | 2014-08-21 | 2019-07-23 | Johnson & Johnson Vision Care, Inc. | Biomedical energization elements with polymer electrolytes |
US9941547B2 (en) | 2014-08-21 | 2018-04-10 | Johnson & Johnson Vision Care, Inc. | Biomedical energization elements with polymer electrolytes and cavity structures |
US9812478B2 (en) * | 2015-03-05 | 2017-11-07 | Omnivision Technologies, Inc. | Aerogel-encapsulated image sensor and manufacturing method for same |
US10345620B2 (en) | 2016-02-18 | 2019-07-09 | Johnson & Johnson Vision Care, Inc. | Methods and apparatus to form biocompatible energization elements incorporating fuel cells for biomedical devices |
US9966360B2 (en) * | 2016-07-05 | 2018-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package and manufacturing method thereof |
JPWO2018008255A1 (ja) * | 2016-07-05 | 2019-04-25 | シャープ株式会社 | 光学機器 |
JP2018061000A (ja) | 2016-09-30 | 2018-04-12 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子及び撮像装置 |
WO2018061481A1 (ja) | 2016-09-30 | 2018-04-05 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子及び撮像装置 |
KR102354606B1 (ko) * | 2017-03-16 | 2022-01-25 | 엘지이노텍 주식회사 | 카메라 모듈 및 광학 기기 |
CN109411486B (zh) * | 2017-08-16 | 2020-12-08 | 胜丽国际股份有限公司 | 感测器封装结构 |
DE102017123342A1 (de) * | 2017-10-09 | 2019-04-11 | Schott Ag | TO-Gehäuse mit hoher Reflexionsdämpfung |
US10347678B2 (en) * | 2017-11-16 | 2019-07-09 | Visera Technologies Company Limited | Image sensor with shifted microlens array |
JP6971826B2 (ja) * | 2017-12-18 | 2021-11-24 | 新光電気工業株式会社 | 固体撮像装置及びその製造方法 |
KR102498582B1 (ko) * | 2018-02-26 | 2023-02-14 | 에스케이하이닉스 주식회사 | 파티션 패턴들을 가진 이미지 센서 |
US11069729B2 (en) | 2018-05-01 | 2021-07-20 | Canon Kabushiki Kaisha | Photoelectric conversion device, and equipment |
KR20200065874A (ko) * | 2018-11-30 | 2020-06-09 | 서울바이오시스 주식회사 | 방수 살균 모듈 및 이를 포함하는 캐리어 |
KR20210021172A (ko) | 2019-08-14 | 2021-02-25 | 삼성전자주식회사 | 이미지 센서 칩을 포함하는 반도체 패키지 |
WO2022201726A1 (ja) * | 2021-03-26 | 2022-09-29 | ソニーセミコンダクタソリューションズ株式会社 | 半導体パッケージ、および、半導体パッケージの製造方法 |
JP2022150746A (ja) * | 2021-03-26 | 2022-10-07 | ソニーセミコンダクタソリューションズ株式会社 | 半導体チップおよびその製造方法、半導体装置およびその製造方法、並びに電子機器 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61267363A (ja) * | 1985-05-21 | 1986-11-26 | Toshiba Corp | イメ−ジセンサ |
JPS62140433A (ja) * | 1985-12-16 | 1987-06-24 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
JPH03225867A (ja) * | 1990-01-31 | 1991-10-04 | Hitachi Ltd | 固体撮像装置 |
JPH0575934A (ja) * | 1991-09-13 | 1993-03-26 | Toshiba Corp | Ccd撮像デバイスモジユール |
JPH06160776A (ja) * | 1992-11-20 | 1994-06-07 | Fuji Photo Film Co Ltd | 光学ローパスフィルターの保持構造 |
JPH06252450A (ja) * | 1993-02-23 | 1994-09-09 | Kyocera Corp | 画像装置 |
JPH11111959A (ja) * | 1997-10-07 | 1999-04-23 | Matsushita Electron Corp | 固体撮像素子収納容器およびそれを用いた固体撮像装置および固体撮像装置の製造方法 |
JP2003031520A (ja) * | 2001-07-12 | 2003-01-31 | Denso Corp | 半導体装置の製造方法 |
JP2004207461A (ja) * | 2002-12-25 | 2004-07-22 | Olympus Corp | 固体撮像装置及びその製造方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04246967A (ja) | 1991-01-31 | 1992-09-02 | Kyocera Corp | イメージセンサ |
JPH06232379A (ja) * | 1993-02-01 | 1994-08-19 | Sharp Corp | 固体撮像素子 |
EP0630056B1 (en) * | 1993-05-28 | 1998-02-18 | Toshiba Ave Co., Ltd | Use of anisotropically conductive film for connecting leads of wiring board with electrode pads of photoelectric converting device and mounting method of the device |
KR0168338B1 (ko) * | 1995-05-31 | 1998-12-15 | 김광호 | 랜딩 패드를 갖는 반도체 메모리 장치의 제조방법 |
US6011294A (en) * | 1996-04-08 | 2000-01-04 | Eastman Kodak Company | Low cost CCD packaging |
JP3399495B2 (ja) | 1996-07-08 | 2003-04-21 | ソニー株式会社 | 固体撮像装置とその製造方法 |
JPH10270672A (ja) | 1997-03-25 | 1998-10-09 | Sony Corp | 固体撮像素子 |
DE19853703A1 (de) * | 1998-11-20 | 2000-05-25 | Giesecke & Devrient Gmbh | Verfahren zur Herstellung eines beidseitig prozessierten integrierten Schaltkreises |
JP4234269B2 (ja) | 1999-07-16 | 2009-03-04 | 浜松ホトニクス株式会社 | 半導体装置及びその製造方法 |
EP1122945A4 (en) | 1999-08-19 | 2004-06-23 | Mitsubishi Electric Corp | IMAGE PICKUP DEVICE AND APPARATUS |
JP2001351997A (ja) | 2000-06-09 | 2001-12-21 | Canon Inc | 受光センサーの実装構造体およびその使用方法 |
JP2002094082A (ja) * | 2000-07-11 | 2002-03-29 | Seiko Epson Corp | 光素子及びその製造方法並びに電子機器 |
CN1171308C (zh) * | 2000-11-28 | 2004-10-13 | 矽品精密工业股份有限公司 | 影像感应器封装 |
JP2002231920A (ja) | 2001-02-06 | 2002-08-16 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
JP2002231921A (ja) | 2001-02-06 | 2002-08-16 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
JP2002329850A (ja) | 2001-05-01 | 2002-11-15 | Canon Inc | チップサイズパッケージおよびその製造方法 |
JP4882182B2 (ja) * | 2001-08-08 | 2012-02-22 | 凸版印刷株式会社 | 固体撮像素子 |
JP5044878B2 (ja) | 2001-09-19 | 2012-10-10 | ソニー株式会社 | 固体撮像装置 |
JP2003163342A (ja) | 2001-11-29 | 2003-06-06 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
JP2004063786A (ja) | 2002-07-29 | 2004-02-26 | Fuji Photo Film Co Ltd | 固体撮像装置およびその製造方法 |
JP4440554B2 (ja) * | 2002-09-24 | 2010-03-24 | 浜松ホトニクス株式会社 | 半導体装置 |
JP2004312666A (ja) | 2003-03-25 | 2004-11-04 | Fuji Photo Film Co Ltd | 固体撮像装置及び固体撮像装置の製造方法 |
JP2004349463A (ja) | 2003-05-22 | 2004-12-09 | Nikon Corp | 受光装置 |
JP4198072B2 (ja) | 2004-01-23 | 2008-12-17 | シャープ株式会社 | 半導体装置、光学装置用モジュール及び半導体装置の製造方法 |
JP4451182B2 (ja) | 2004-03-26 | 2010-04-14 | 富士フイルム株式会社 | 固体撮像装置 |
JP2005316111A (ja) | 2004-04-28 | 2005-11-10 | Sharp Corp | マイクロレンズ及びこのマイクロレンズを備える固体撮像素子、液晶表示装置 |
JP4381274B2 (ja) * | 2004-10-04 | 2009-12-09 | シャープ株式会社 | 半導体装置およびその製造方法 |
-
2005
- 2005-12-27 WO PCT/JP2005/023875 patent/WO2006073085A1/ja active Application Filing
- 2005-12-27 JP JP2006519698A patent/JP3917649B2/ja not_active Expired - Fee Related
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- 2006-11-13 JP JP2006306225A patent/JP2007134725A/ja active Pending
- 2006-11-13 JP JP2006306224A patent/JP4871707B2/ja active Active
-
2007
- 2007-09-06 JP JP2007232079A patent/JP4340310B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61267363A (ja) * | 1985-05-21 | 1986-11-26 | Toshiba Corp | イメ−ジセンサ |
JPS62140433A (ja) * | 1985-12-16 | 1987-06-24 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
JPH03225867A (ja) * | 1990-01-31 | 1991-10-04 | Hitachi Ltd | 固体撮像装置 |
JPH0575934A (ja) * | 1991-09-13 | 1993-03-26 | Toshiba Corp | Ccd撮像デバイスモジユール |
JPH06160776A (ja) * | 1992-11-20 | 1994-06-07 | Fuji Photo Film Co Ltd | 光学ローパスフィルターの保持構造 |
JPH06252450A (ja) * | 1993-02-23 | 1994-09-09 | Kyocera Corp | 画像装置 |
JPH11111959A (ja) * | 1997-10-07 | 1999-04-23 | Matsushita Electron Corp | 固体撮像素子収納容器およびそれを用いた固体撮像装置および固体撮像装置の製造方法 |
JP2003031520A (ja) * | 2001-07-12 | 2003-01-31 | Denso Corp | 半導体装置の製造方法 |
JP2004207461A (ja) * | 2002-12-25 | 2004-07-22 | Olympus Corp | 固体撮像装置及びその製造方法 |
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KR20080081097A (ko) | 2008-09-05 |
JP4871707B2 (ja) | 2012-02-08 |
US8368096B2 (en) | 2013-02-05 |
CN101065844A (zh) | 2007-10-31 |
WO2006073085A1 (ja) | 2006-07-13 |
JPWO2006073085A1 (ja) | 2008-06-12 |
DE112005003327T5 (de) | 2007-11-29 |
CN101065844B (zh) | 2010-12-15 |
KR20070086904A (ko) | 2007-08-27 |
JP2007134725A (ja) | 2007-05-31 |
KR100922669B1 (ko) | 2009-10-19 |
JP2007123909A (ja) | 2007-05-17 |
JP3917649B2 (ja) | 2007-05-23 |
JP4340310B2 (ja) | 2009-10-07 |
US20080042227A1 (en) | 2008-02-21 |
JP2008072111A (ja) | 2008-03-27 |
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