JP5498684B2 - 半導体モジュール及びその製造方法 - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
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Description
また、本発明の半導体モジュールは、表面に受光素子が形成された半導体チップと、表面、裏面及び側面を備え、その裏面が前記半導体チップの表面を覆うように前記半導体チップの表面と対向して配置された透光性カバーと、前記透光性カバーの表面の外周領域及び側面と前記半導体チップの側面の一部とを被覆する遮光層と、光を前記透光性カバーを介して前記受光素子に集光させる集光部と前記集光部を支持する支持部とを有し、前記透光性カバー上に前記支持部を介して搭載されたレンズユニットと、を備え、前記支持部は前記外周領域の前記遮光層上に固定されていることを特徴としている。
2 封止材
3 半導体チップ
4,24 貫通孔
5,25 配線
6 絶縁層
7 端子
8,27 遮光層
12,30 レンズユニット
21 透光性ウエハ
22 封止部材
23 半導体素子ウエハ
26 溝
29 カット部
Claims (15)
- 表面に受光素子が形成された半導体チップと、
表面、裏面及び側面を備え、その裏面が前記半導体チップの表面を覆うように前記半導体チップの表面と対向して配置された透光性カバーと、
前記透光性カバーの表面の外周領域及び側面と前記半導体チップの第1の側面とを被覆する遮光層と、を有し、
前記半導体チップの第2の側面と前記遮光層の側面とは切断により同一面を構成することを特徴とする半導体モジュール。 - 前記透光性カバーの側面と前記半導体チップの第1の側面とは、切断により同一面を構成することを特徴とする請求項1に記載の半導体モジュール。
- 表面に受光素子が形成された半導体チップと、
表面、裏面及び側面を備え、その裏面が前記半導体チップの表面を覆うように前記半導体チップの表面と対向して配置された透光性カバーと、
前記透光性カバーの表面の外周領域及び側面と前記半導体チップの側面の一部とを被覆する遮光層と、
光を前記透光性カバーを介して前記受光素子に集光させる集光部と前記集光部を支持する支持部とを有し、前記透光性カバー上に前記支持部を介して搭載されたレンズユニットと、を備え、
前記支持部は前記外周領域の前記遮光層上に固定されていることを特徴とする半導体モジュール。 - 前記半導体チップの表面の外周部には前記受光素子と電気的に接続された電極パッドが形成され、
前記半導体チップの外周部の前記電極パッドに対応した位置には前記半導体チップの表面と裏面との間を貫通する貫通孔が形成され、
前記半導体チップの裏面には、前記貫通孔内の配線を介して前記電極パッドと電気的に接続された外部端子が形成されていることを特徴とする請求項1から3のいずれか1項に記載の半導体モジュール。 - 前記透光性カバーの側面全体が前記遮光層によって覆われていることを特徴とする請求項1から4のいずれか1項に記載の半導体モジュール。
- 前記遮光層は、絶縁材料からなることを特徴とする請求項1から5のいずれか1項に記載の半導体モジュール。
- 前記遮光層は、エポキシ、アクリル、シリコン樹脂及びポリイミドのうちのいずれか1からなることを特徴とする請求項6に記載の半導体モジュール。
- 前記半導体チップの表面と前記外周領域の前記遮光層の表面との間が前記レンズユニットの焦点距離に応じた距離となるようにその外周領域の前記遮光層の厚みが調整されていることを特徴とする請求項3から7のいずれか1項に記載の半導体モジュール。
- 受光素子が形成された半導体チップの表面を覆うように前記半導体チップの表面と対向して透光性カバーが配置される半導体モジュールの製造方法であって、
表面に、受光素子が形成された領域を含む複数の半導体チップ形成領域を備えた半導体素子ウエハを準備する工程と、
前記半導体素子ウエハの表面と、前記透光性カバーを複数なすための透光性ウエハと、を接着層を介して貼り合わせて半導体ウエハを形成する接着工程と、
前記複数の半導体チップ形成領域各々の周囲に前記透光性ウエハの表面から前記半導体素子ウエハの途中に至る溝を形成する溝形成工程と、
前記溝内及び前記透光性ウエハの表面の前記溝に隣接する近傍領域上に遮光層を形成する工程と、
前記半導体素子ウエハの表面と前記近傍領域上の前記遮光層の表面との間が所定の距離となるように前記近傍領域上の前記遮光層の表面を研磨する研磨工程と、
前記溝内の前記遮光層及びそれに続く前記半導体素子ウエハ部分で前記半導体ウエハを個片化して前記半導体モジュールとする個片化工程と、を備えたことを特徴とする半導体モジュールの製造方法。 - 光を前記透光性カバーを介して前記受光素子に集光させるレンズユニットを、前記研磨工程後、前記半導体チップ形成領域各々に対応させて前記近傍領域上の前記遮光層の表面に固定させるレンズ取付工程を備えることを特徴とする請求項9記載の半導体モジュールの製造方法。
- 前記溝をダイシングによって形成することを特徴とする請求項9記載の半導体モジュールの製造方法。
- 前記遮光層を真空印刷によって形成することを特徴とする請求項9記載の半導体モジュールの製造方法。
- 前記遮光層は、アクリル、シリコン樹脂及びポリイミドのうちのいずれか1からなることを特徴とする請求項9記載の半導体モジュールの製造方法。
- 前記遮光層は、エボキシからなることを特徴とする請求項9記載の半導体モジュールの製造方法。
- 表面に、受光素子が形成された領域を含む複数の半導体素子形成領域を備えた半導体素子ウエハを準備する工程と、
表面及び裏面を備えた透光性ウエハを準備する工程と、
集光部、及び前記集光部を支持する支持部を備えたレンズユニットを複数準備する工程と、
前記半導体素子ウエハの表面と前記透光性ウエハの裏面とを対向させて、前記半導体素子ウエハと前記透光性ウエハを接着層を介して貼り合わせて半導体ウエハを形成する工程と、
前記複数の半導体チップ形成領域各々の周囲に前記透光性ウエハの表面側から透光性ウエハの途中に至る溝を形成する工程と、
前記溝に充填され、かつ前記第2の領域上の前記透光性ウエハの表面に残るように遮光層を形成する工程と、
前記遮光層を研削して所望の膜厚に調整する工程と、
前記支持部と前記透光性ウエハの表面上に形成された前記遮光層とを接合し、前記透光性ウエハの表面上であって前記集光部からの光が前記透光性ウエハを介して個々の前記受光素子に供給される位置に複数の前記レンズユニットを搭載する工程と、
前記溝内の前記遮光層及びそれに続く前記半導体素子ウエハ部分で前記半導体ウエハを個片化する工程と、を有することを特徴とする半導体モジュールの製造方法。
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JP2008286500A JP5498684B2 (ja) | 2008-11-07 | 2008-11-07 | 半導体モジュール及びその製造方法 |
US12/591,066 US8742323B2 (en) | 2008-11-07 | 2009-11-06 | Semiconductor module |
US14/260,428 US20140231947A1 (en) | 2008-11-07 | 2014-04-24 | Semiconductor module |
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JP2010238995A (ja) * | 2009-03-31 | 2010-10-21 | Sanyo Electric Co Ltd | 半導体モジュールおよびこれを搭載したカメラモジュール |
KR101849223B1 (ko) * | 2012-01-17 | 2018-04-17 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
US9386203B2 (en) * | 2013-10-28 | 2016-07-05 | Omnivision Technologies, Inc. | Compact spacer in multi-lens array module |
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US20100117175A1 (en) | 2010-05-13 |
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