JP5235829B2 - 半導体装置の製造方法、半導体装置 - Google Patents
半導体装置の製造方法、半導体装置 Download PDFInfo
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- JP5235829B2 JP5235829B2 JP2009221978A JP2009221978A JP5235829B2 JP 5235829 B2 JP5235829 B2 JP 5235829B2 JP 2009221978 A JP2009221978 A JP 2009221978A JP 2009221978 A JP2009221978 A JP 2009221978A JP 5235829 B2 JP5235829 B2 JP 5235829B2
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- 239000004065 semiconductor Substances 0.000 title claims description 116
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 57
- 239000011229 interlayer Substances 0.000 claims description 42
- 239000011347 resin Substances 0.000 claims description 37
- 229920005989 resin Polymers 0.000 claims description 37
- 239000011521 glass Substances 0.000 claims description 33
- 239000010410 layer Substances 0.000 claims description 32
- 239000012790 adhesive layer Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 26
- 238000005520 cutting process Methods 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000009719 polyimide resin Substances 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 229910052710 silicon Inorganic materials 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- 238000005336 cracking Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Dicing (AREA)
Description
Wlk=Wdl+2×L11・・・・・・・・・・・・・式(1)
と設定される。つまり、開口部30は、集積回路部2と離間し、ダイシングライン端からの距離L11分、半導体チップの内側まで設けられる。
(付記1) 半導体ウェハ上に設けられ、シリコン酸化膜(SiO2)よりも誘電率が小さい層間絶縁膜と、前記層間絶縁膜が開口され、ダイシングライン領域よりも幅が広く、素子形成領域と離間して形成される開口部と、前記開口部を覆うように設けられる樹脂層とを具備することを特徴とする半導体装置。
2 集積回路部
3 受光部
4 層間絶縁膜
5 樹脂層
6 表面電極
7 貫通孔
8 貫通電極
9 裏面電極
10 接着層
11 空隙部
12 裏面保護膜
13 ボール端子
21 IRカットフィルタ
22 集光レンズ
23 レンズホルダ
24 シールドキャップ
30 開口部
31 カラーフィルタ膜
50 半導体チップ
50a 第1の半導体チップ
50b 第2の半導体チップ
60 ガラス基板
70 基板
80 半導体装置
90 カメラモジュール
100 シリコンウェハ
L1 半導体チップ端とガラス基板端の距離
L11 ダイシングラインからの距離
Wdl ダイシングライン幅
Wlk レーザ加工幅
Claims (4)
- シリコン酸化膜(SiO2)よりも誘電率が小さく、半導体ウェハ上に設けられる層間
絶縁膜をダイシングライン領域よりも幅広く、且つ集積回路部と離間するようにエッチン
グ又はレーザ光を照射することにより、開口部を形成する工程と、
前記開口部に樹脂層を埋め込む工程と、
前記層間絶縁膜及び前記樹脂層上に接着層を形成する工程と、
前記接着層が設けられる半導体ウェハをFace Downしてガラス基板上に載置し、接着層に
より前記半導体ウェハを前記ガラス基板に固着する工程と、
前記ダイシングライン領域の前記半導体ウェハ、前記樹脂層、及び前記接着層を前記半導
体ウェハの裏面側からブレードダイシングにより切削する工程と、
前記ダイシングライン領域直下の前記ガラス基板を前記半導体ウェハの裏面側からブレー
ドダイシングにより切削し、前記接着層により接着される前記ガラス基板及び前記半導体
ウェハを個片化する工程と、
を具備することを特徴とする半導体装置の製造方法。 - シリコン酸化膜(SiO2)よりも誘電率が小さく、半導体ウェハ上に設けられる層間
絶縁膜をダイシングライン領域よりも幅広く、且つ集積回路部と離間するようにエッチン
グ又はレーザ光を照射することにより、開口部を形成する工程と、
前記開口部に樹脂層を埋め込む工程と、
前記半導体ウェハの裏面を研削して薄ウェハ化する工程と、
前記層間絶縁膜上の表面電極、前記層間絶縁膜、及び前記樹脂層上に接着層を形成する工
程と、
薄化され、前記接着層が設けられる半導体ウェハをFace Downしてガラス基板上に載置し
、接着層により前記半導体ウェハを前記ガラス基板に固着する工程と、
前記半導体ウェハ及び前記層間絶縁膜をエッチングし、前記表面電極が露呈するように貫
通孔を形成する工程と、
前記貫通孔に貫通電極を埋設する工程と、
前記貫通電極上に裏面電極を形成する工程と、
前記半導体ウェハの裏面側に裏面保護膜を形成する工程と、
前記裏面電極上にボール端子を形成する工程と、
前記ダイシングライン領域の前記裏面保護膜、前記半導体ウェハ、前記樹脂層、及び接着
層を前記裏面保護膜側からブレードダイシングにより切削する工程と、
前記ダイシングライン領域直下の前記ガラス基板を前記裏面保護膜側からブレードダイシ
ングにより切削し、前記接着層により接着される前記ガラス基板及び前記半導体ウェハを
個片化する工程と、
を具備する半導体装置の製造方法。 - 前記樹脂層は、ポリイミド樹脂、BCB(ベンゾシクロブテン)樹脂、或いはフッ素系
樹脂であることを特徴とする請求項1又は2に記載の半導体装置の製造方法。 - 前記層間絶縁膜は、SiOC膜、SiOCH膜、或いはポーラス(多孔性)シリカ膜で
あることを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009221978A JP5235829B2 (ja) | 2009-09-28 | 2009-09-28 | 半導体装置の製造方法、半導体装置 |
US12/880,838 US8704337B2 (en) | 2009-09-28 | 2010-09-13 | Semiconductor device and method for manufacturing the same |
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Application Number | Priority Date | Filing Date | Title |
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JP2009221978A JP5235829B2 (ja) | 2009-09-28 | 2009-09-28 | 半導体装置の製造方法、半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2011071379A JP2011071379A (ja) | 2011-04-07 |
JP5235829B2 true JP5235829B2 (ja) | 2013-07-10 |
Family
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JP2009221978A Expired - Fee Related JP5235829B2 (ja) | 2009-09-28 | 2009-09-28 | 半導体装置の製造方法、半導体装置 |
Country Status (2)
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US (1) | US8704337B2 (ja) |
JP (1) | JP5235829B2 (ja) |
Cited By (1)
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---|---|---|---|---|
US10930602B2 (en) | 2018-10-19 | 2021-02-23 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
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JPWO2012144196A1 (ja) * | 2011-04-22 | 2014-07-28 | パナソニック株式会社 | 固体撮像装置 |
JP2013122984A (ja) * | 2011-12-12 | 2013-06-20 | Canon Inc | 半導体素子の製造方法 |
WO2014099328A1 (en) * | 2012-12-19 | 2014-06-26 | Borgwarner Inc. | Methods and structure for reducing losses in 90 degree waste gates for turbochargers |
JP6207205B2 (ja) * | 2013-04-04 | 2017-10-04 | キヤノン株式会社 | 液体吐出ヘッド、ならびに記録素子基板およびその製造方法 |
KR102411678B1 (ko) * | 2015-07-28 | 2022-06-21 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법, 및 상기 반도체 장치를 포함하는 반도체 패키지 |
US10522505B2 (en) | 2017-04-06 | 2019-12-31 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method for manufacturing the same |
DE102018123484A1 (de) * | 2018-09-24 | 2020-03-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Vereinzeln eines Halbleiterbauelementes mit einem pn-Übergang und Halbleiterbauelement mit einem pn-Übergang |
CN111199906B (zh) * | 2018-11-16 | 2022-06-07 | 典琦科技股份有限公司 | 芯片封装体的制造方法 |
JP2020194855A (ja) * | 2019-05-27 | 2020-12-03 | 株式会社 Rosnes | カバーガラスを撮像面側に有する固体撮像装置の製造方法 |
JP7217688B2 (ja) * | 2019-09-26 | 2023-02-03 | 三菱電機株式会社 | 半導体装置、及び半導体素子の製造方法 |
KR20220095419A (ko) * | 2020-12-30 | 2022-07-07 | 에스케이하이닉스 주식회사 | 관통 전극을 포함하는 반도체 칩, 및 이 반도체 칩을 포함하는 반도체 패키지 |
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- 2009-09-28 JP JP2009221978A patent/JP5235829B2/ja not_active Expired - Fee Related
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- 2010-09-13 US US12/880,838 patent/US8704337B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10930602B2 (en) | 2018-10-19 | 2021-02-23 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
US11784137B2 (en) | 2018-10-19 | 2023-10-10 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
Also Published As
Publication number | Publication date |
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US20110073974A1 (en) | 2011-03-31 |
US8704337B2 (en) | 2014-04-22 |
JP2011071379A (ja) | 2011-04-07 |
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