JPWO2020121857A1 - 光検出装置及び光検出装置の製造方法 - Google Patents

光検出装置及び光検出装置の製造方法 Download PDF

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Publication number
JPWO2020121857A1
JPWO2020121857A1 JP2020559152A JP2020559152A JPWO2020121857A1 JP WO2020121857 A1 JPWO2020121857 A1 JP WO2020121857A1 JP 2020559152 A JP2020559152 A JP 2020559152A JP 2020559152 A JP2020559152 A JP 2020559152A JP WO2020121857 A1 JPWO2020121857 A1 JP WO2020121857A1
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semiconductor layer
apd
main surface
semiconductor
peripheral carrier
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Japanese (ja)
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弘典 園部
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Publication of JPWO2020121857A1 publication Critical patent/JPWO2020121857A1/ja
Priority to JP2024071818A priority Critical patent/JP2024096235A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/444—Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2020559152A 2018-12-12 2019-11-29 光検出装置及び光検出装置の製造方法 Pending JPWO2020121857A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024071818A JP2024096235A (ja) 2018-12-12 2024-04-25 光検出装置及び光検出装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018232895 2018-12-12
JP2018232895 2018-12-12
PCT/JP2019/046907 WO2020121857A1 (ja) 2018-12-12 2019-11-29 光検出装置及び光検出装置の製造方法

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JP2024071818A Pending JP2024096235A (ja) 2018-12-12 2024-04-25 光検出装置及び光検出装置の製造方法

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US (1) US12322744B2 (enExample)
EP (1) EP3896411B1 (enExample)
JP (2) JPWO2020121857A1 (enExample)
CN (1) CN113167643B (enExample)
WO (1) WO2020121857A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11901379B2 (en) * 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
JP7455520B2 (ja) 2018-12-12 2024-03-26 浜松ホトニクス株式会社 光検出装置
US12080822B2 (en) * 2018-12-12 2024-09-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector
US12322744B2 (en) 2018-12-12 2025-06-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector
WO2020121851A1 (ja) 2018-12-12 2020-06-18 浜松ホトニクス株式会社 光検出装置

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US11901379B2 (en) * 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
WO2020121851A1 (ja) * 2018-12-12 2020-06-18 浜松ホトニクス株式会社 光検出装置
US12080822B2 (en) * 2018-12-12 2024-09-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector
US11513002B2 (en) * 2018-12-12 2022-11-29 Hamamatsu Photonics K.K. Light detection device having temperature compensated gain in avalanche photodiode
JP7455520B2 (ja) * 2018-12-12 2024-03-26 浜松ホトニクス株式会社 光検出装置
US12322744B2 (en) 2018-12-12 2025-06-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector
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US20230083263A1 (en) 2021-09-15 2023-03-16 Kabushiki Kaisha Toshiba Light detector, light detection system, lidar device, and mobile body

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JP2004303878A (ja) * 2003-03-31 2004-10-28 Nippon Sheet Glass Co Ltd 受光素子アレイ

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JP2024096235A (ja) 2024-07-12
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