JPWO2020121857A1 - 光検出装置及び光検出装置の製造方法 - Google Patents
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Abstract
Description
Claims (12)
- 光検出装置であって、
互いに対向する第一主面及び第二主面を有すると共に、前記第一主面に直交する方向から見て互いに離間してアバランシェフォトダイオードと温度補償用ダイオードとが形成された半導体基板を備え、
前記半導体基板は、前記第一主面に直交する方向から見て前記アバランシェフォトダイオードを囲んでおり、かつ、周辺に位置するキャリアを吸収する周辺キャリア吸収部を有し、
前記周辺キャリア吸収部の一部は、前記第一主面に直交する方向から見て、前記アバランシェフォトダイオードと前記温度補償用ダイオードとの間に位置し、
前記温度補償用ダイオードに印加されるブレークダウン電圧に応じた電圧を前記アバランシェフォトダイオードにバイアス電圧として印加することで、前記アバランシェフォトダイオードの増倍率の温度補償が行われる。 - 請求項1に記載の光検出装置であって、
前記半導体基板の前記第一主面側には、前記アバランシェフォトダイオードを含むアバランシェフォトダイオードアレイが形成されており、
前記周辺キャリア吸収部は、前記第一主面に直交する方向から見て、前記アバランシェフォトダイオードアレイを囲んでおり、
前記周辺キャリア吸収部の一部は、前記第一主面に直交する方向から見て、前記アバランシェフォトダイオードアレイと前記温度補償用ダイオードとの間に位置している。 - 請求項1又は2に記載の光検出装置であって、
前記アバランシェフォトダイオードに接続され、かつ、当該アバランシェフォトダイオードからの信号を出力する第一電極と、
前記温度補償用ダイオードに接続された第二電極と、
前記周辺キャリア吸収部に接続された第三電極と、を備える。 - 請求項3に記載の光検出装置であって、
前記アバランシェフォトダイオード、前記温度補償用ダイオード、及び前記周辺キャリア吸収部が互いに並列に接続された第四電極を備える。 - 請求項1〜4のいずれか一項に記載の光検出装置であって、
前記半導体基板は、第一導電型の半導体領域を含み、
前記アバランシェフォトダイオード及び前記温度補償用ダイオードは、それぞれ、前記第一導電型と異なる第二導電型の第一半導体層と、前記半導体領域と前記第一半導体層との間に配置されていると共に前記半導体領域よりも不純物濃度が高い前記第一導電型の第二半導体層とを含む。 - 請求項5に記載の光検出装置であって、
前記周辺キャリア吸収部は、前記第二導電型の第三半導体層を含む。 - 請求項5に記載の光検出装置であって、
前記周辺キャリア吸収部は、前記第一導電型の第三半導体層を含む。 - 請求項6又は7に記載の光検出装置であって、
前記温度補償用ダイオードの前記第二半導体層における不純物濃度は、前記アバランシェフォトダイオードの前記第二半導体層における不純物濃度より高い。 - 請求項6〜8のいずれか一項に記載の光検出装置であって、
前記温度補償用ダイオードの前記第二半導体層における不純物濃度は、前記アバランシェフォトダイオードの前記第二半導体層における不純物濃度より低い。 - 請求項1〜9のいずれか一項に記載の光検出装置の製造方法であって、
前記第一主面を有すると共に第一導電型の半導体領域を含む半導体ウエハを準備する工程と、
前記半導体ウエハにおいて、前記第一主面と直交する方向から見て互いに離間した第一の箇所と第二の箇所とにイオンを注入することで、前記第一の箇所及び前記第二の箇所のそれぞれに、前記第一導電型と異なる第二導電型の第一半導体層と、前記半導体領域と前記第一半導体層との間に位置していると共に前記半導体領域よりも不純物濃度が高い前記第一導電型の第二半導体層とを形成する第一のイオン注入工程と、
前記第一の箇所における前記第二半導体層にさらにイオンを注入する第二のイオン注入工程と、を有する。 - 請求項10に記載の光検出装置の製造方法であって、
前記第一のイオン注入工程は、
前記第一の箇所及び前記第二の箇所と、前記第一主面と直交する方向から見て前記第一の箇所及び前記第二の箇所から離間した第三の箇所とに前記第二導電型の不純物イオンを注入することで、一回のイオン注入処理で前記第一の箇所及び前記第二の箇所のそれぞれに前記第一半導体層を形成すると共に前記第三の箇所に前記第二導電型の第三半導体層を形成する工程と、
前記第一の箇所及び前記第二の箇所に前記第一導電型の不純物イオンを注入することで、前記第一の箇所及び前記第二の箇所のそれぞれに前記第二半導体層を形成する工程と、を含む。 - 光検出装置であって、
互いに対向する第一主面及び第二主面を有する半導体基板を備え、
前記半導体基板は、
前記第一主面側に光入射面を有する第一アバランシェフォトダイオードと、
前記第一主面に直交する方向から見て、前記第一アバランシェフォトダイオードから離間していると共に遮光されている第二アバランシェフォトダイオードと、
前記第一主面に直交する方向から見て、前記第一アバランシェフォトダイオードを囲んでおり、かつ、周辺に位置するキャリアを吸収する周辺キャリア吸収部と、を有し、
前記周辺キャリア吸収部の一部は、前記第一主面に直交する方向から見て、前記第一アバランシェフォトダイオードと前記第二アバランシェフォトダイオードとの間に位置する。
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JP2018232895 | 2018-12-12 | ||
JP2018232895 | 2018-12-12 | ||
PCT/JP2019/046907 WO2020121857A1 (ja) | 2018-12-12 | 2019-11-29 | 光検出装置及び光検出装置の製造方法 |
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JP (1) | JPWO2020121857A1 (ja) |
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JP7454917B2 (ja) | 2018-12-12 | 2024-03-25 | 浜松ホトニクス株式会社 | 光検出装置 |
US11901379B2 (en) * | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
EP3988908A4 (en) * | 2018-12-12 | 2022-12-14 | Hamamatsu Photonics K.K. | PHOTOSENSOR AND METHOD FOR MAKING THE PHOTOSENSOR |
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JPS5062389A (ja) * | 1973-10-01 | 1975-05-28 | ||
GB1503088A (en) * | 1976-07-22 | 1978-03-08 | Standard Telephones Cables Ltd | Avalanche photodetector |
SE417145B (sv) * | 1979-05-30 | 1981-02-23 | Asea Ab | Lavinfotodiodanordning med en lavindiod och med organ for styrning av diodens multiplikationsfaktor |
JPS60178673A (ja) * | 1984-02-24 | 1985-09-12 | Nec Corp | アバランシフオトダイオ−ド |
JPH0799782B2 (ja) * | 1985-06-18 | 1995-10-25 | 株式会社ニコン | 半導体光検出装置 |
JPS62239727A (ja) * | 1986-04-11 | 1987-10-20 | Nec Corp | アバランシエホトダイオ−ドの利得制御方式 |
US4948989A (en) * | 1989-01-31 | 1990-08-14 | Science Applications International Corporation | Radiation-hardened temperature-compensated voltage reference |
JPH04256376A (ja) * | 1991-02-08 | 1992-09-11 | Hamamatsu Photonics Kk | アバランシェホトダイオード及びその製造方法 |
JPH06224463A (ja) * | 1993-01-22 | 1994-08-12 | Mitsubishi Electric Corp | 半導体受光装置 |
JP2686036B2 (ja) | 1993-07-09 | 1997-12-08 | 浜松ホトニクス株式会社 | アバランシェフォトダイオードのバイアス回路 |
JP2004303878A (ja) * | 2003-03-31 | 2004-10-28 | Nippon Sheet Glass Co Ltd | 受光素子アレイ |
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US20220020786A1 (en) | 2022-01-20 |
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Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20240130 |