JP7455520B2 - 光検出装置 - Google Patents
光検出装置 Download PDFInfo
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- JP7455520B2 JP7455520B2 JP2019111529A JP2019111529A JP7455520B2 JP 7455520 B2 JP7455520 B2 JP 7455520B2 JP 2019111529 A JP2019111529 A JP 2019111529A JP 2019111529 A JP2019111529 A JP 2019111529A JP 7455520 B2 JP7455520 B2 JP 7455520B2
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- 238000001514 detection method Methods 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims description 124
- 230000002093 peripheral effect Effects 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 34
- 238000010521 absorption reaction Methods 0.000 claims description 31
- 239000000969 carrier Substances 0.000 claims description 11
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 30
- 230000004048 modification Effects 0.000 description 18
- 238000012986 modification Methods 0.000 description 18
- 239000012535 impurity Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0214—Constructional arrangements for removing stray light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/444—Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
- G01J2001/4466—Avalanche
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
上記光検出装置では、第一セルに対応するパッド電極は第一領域に配置され、第二セルに対応するパッド電極は、受光領域を挟んで第一領域と離間した第二領域に配置されている。このため、パッド電極間のクロストーク及び熱の影響も抑制されている。
Claims (7)
- 複数のセルが第一方向に配列された受光領域を有する半導体基板と、
前記半導体基板に配置されていると共に、各々が、前記複数のセルのうち対応する前記セルに電気的に接続されている複数のパッド電極と、
各々が、前記複数のパッド電極のうち対応する前記パッド電極に接続されている複数のワイヤと、
前記半導体基板を挟んで配置されていると共に、前記複数のセルに電気的に接続されている一対のICチップと、を備え、
各前記ワイヤは、対応する前記パッド電極と前記ICチップとを接続し、
前記一対のICチップには、対応する前記ワイヤのボールボンドが形成されおり、
各前記パッド電極には、前記複数のワイヤのうち対応する前記ワイヤのスティッチボンドが形成されており、
各前記パッド電極と当該パッド電極に対応する前記セルとの間の距離は、互いに異なる前記セルに接続された前記複数のパッド電極のうち互いに隣り合うパッド電極間の距離よりも小さく、
前記複数のパッド電極は、前記第一方向と交差する第二方向で前記受光領域を挟んで互いに離間する第一領域と第二領域とに配置されており、
前記複数のセルは、互いに隣り合う第一セル及び第二セルを含む複数のセル群を含み、
前記第一セルに対応する前記パッド電極は、前記第一領域に配置され、
前記第二セルに対応する前記パッド電極は、前記第二領域に配置されている、光検出装置。 - 前記複数のパッド電極の少なくとも一部は、前記受光領域を挟んで千鳥配列されている、請求項1に記載の光検出装置。
- 前記第一セルに対応する前記パッド電極と、前記第二セルに対応する前記パッド電極とは、前記第二方向に並んでいる、請求項1に記載の光検出装置。
- 前記半導体基板は、周辺に位置するキャリアを吸収する周辺キャリア吸収部を有し、
前記周辺キャリア吸収部は、前記半導体基板において前記複数のパッド電極が配置されている面に直交する方向から見て、各前記セルの少なくとも一部を囲んでいる、請求項1~3のいずれか一項に記載の光検出装置。 - 前記周辺キャリア吸収部は、前記半導体基板において前記複数のパッド電極が配置されている面に直交する方向から見て、各前記セルに対応する前記パッド電極の少なくとも一部を囲んでいる、請求項4に記載の光検出装置。
- 前記第一領域において互いに隣り合う前記パッド電極の間には、前記半導体基板に絶縁されていると共に接地された電極が配置されている、請求項1~5のいずれか一項に記載の光検出装置。
- 各前記パッド電極は、前記第一方向と交差する方向に延在する矩形状である、請求項1~6のいずれか一項に記載の光検出装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/311,824 US11901379B2 (en) | 2018-12-12 | 2019-11-29 | Photodetector |
PCT/JP2019/046881 WO2020121852A1 (ja) | 2018-12-12 | 2019-11-29 | 光検出装置 |
KR1020217021021A KR20210098524A (ko) | 2018-12-12 | 2019-11-29 | 광 검출 장치 |
CN201980081953.6A CN113167638B (zh) | 2018-12-12 | 2019-11-29 | 光检测装置 |
DE112019006173.9T DE112019006173T5 (de) | 2018-12-12 | 2019-11-29 | Photodetektor |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018232895 | 2018-12-12 | ||
JP2018232892 | 2018-12-12 | ||
JP2018232895 | 2018-12-12 | ||
JP2018232892 | 2018-12-12 |
Publications (2)
Publication Number | Publication Date |
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JP2020096158A JP2020096158A (ja) | 2020-06-18 |
JP7455520B2 true JP7455520B2 (ja) | 2024-03-26 |
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JP2019111528A Active JP7454917B2 (ja) | 2018-12-12 | 2019-06-14 | 光検出装置 |
JP2019111529A Active JP7455520B2 (ja) | 2018-12-12 | 2019-06-14 | 光検出装置 |
JP2019175941A Active JP6681508B1 (ja) | 2018-12-12 | 2019-09-26 | 決定方法、及び光検出装置 |
JP2019175948A Active JP6681509B1 (ja) | 2018-12-12 | 2019-09-26 | 光検出装置 |
JP2019175945A Active JP7475123B2 (ja) | 2018-12-12 | 2019-09-26 | 光検出装置 |
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JP2019111528A Active JP7454917B2 (ja) | 2018-12-12 | 2019-06-14 | 光検出装置 |
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JP2019175941A Active JP6681508B1 (ja) | 2018-12-12 | 2019-09-26 | 決定方法、及び光検出装置 |
JP2019175948A Active JP6681509B1 (ja) | 2018-12-12 | 2019-09-26 | 光検出装置 |
JP2019175945A Active JP7475123B2 (ja) | 2018-12-12 | 2019-09-26 | 光検出装置 |
Country Status (7)
Country | Link |
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US (2) | US11561131B2 (ja) |
EP (3) | EP3988907B1 (ja) |
JP (5) | JP7454917B2 (ja) |
KR (2) | KR20210098524A (ja) |
CN (5) | CN113302462B (ja) |
DE (2) | DE112019006185T5 (ja) |
WO (2) | WO2020121859A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US20220020786A1 (en) * | 2018-12-12 | 2022-01-20 | Hamamatsu Photonics K.K. | Photodetector and method for manufacturing photodetector |
JP7454917B2 (ja) | 2018-12-12 | 2024-03-25 | 浜松ホトニクス株式会社 | 光検出装置 |
US11901379B2 (en) * | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
EP4361670A1 (en) * | 2021-06-21 | 2024-05-01 | Sony Semiconductor Solutions Corporation | Light-receiving element |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004281488A (ja) | 2003-03-13 | 2004-10-07 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP2004303878A (ja) | 2003-03-31 | 2004-10-28 | Nippon Sheet Glass Co Ltd | 受光素子アレイ |
JP2007281509A (ja) | 2007-06-15 | 2007-10-25 | Sanyo Electric Co Ltd | 半導体装置 |
JP2009038157A (ja) | 2007-07-31 | 2009-02-19 | Sumitomo Electric Ind Ltd | 受光素子アレイ、一次元受光素子アレイおよび二次元受光素子アレイ |
Family Cites Families (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1582850A (ja) | 1968-03-29 | 1969-10-10 | ||
JPS5062389A (ja) | 1973-10-01 | 1975-05-28 | ||
GB1535824A (en) | 1976-02-11 | 1978-12-13 | Standard Telephones Cables Ltd | Avalanche photodetector biassing system |
US4181863A (en) * | 1976-04-03 | 1980-01-01 | Ferranti Limited | Photodiode circuit arrangements |
GB1532262A (en) | 1976-04-03 | 1978-11-15 | Ferranti Ltd | Photodiode circuit arrangements |
GB1503088A (en) | 1976-07-22 | 1978-03-08 | Standard Telephones Cables Ltd | Avalanche photodetector |
JPS5341280A (en) * | 1976-09-27 | 1978-04-14 | Nippon Telegr & Teleph Corp <Ntt> | Photodetecting system of multiplication constant control |
JPS5916812Y2 (ja) * | 1978-06-27 | 1984-05-17 | キヤノン株式会社 | カメラの測光回路 |
JPS6017051B2 (ja) | 1978-11-20 | 1985-04-30 | 東京光学機械株式会社 | アバランシェ・ダイオ−ドの温度補償方法 |
JPS55127082A (en) * | 1979-03-23 | 1980-10-01 | Nec Corp | Bias voltage generating circuit of avalanche photodiode |
SE417145B (sv) | 1979-05-30 | 1981-02-23 | Asea Ab | Lavinfotodiodanordning med en lavindiod och med organ for styrning av diodens multiplikationsfaktor |
US4464048A (en) * | 1981-03-25 | 1984-08-07 | Barr & Stroud Limited | Laser rangefinders |
JPS60178673A (ja) | 1984-02-24 | 1985-09-12 | Nec Corp | アバランシフオトダイオ−ド |
JPS60180347A (ja) * | 1984-02-28 | 1985-09-14 | Fujitsu Ltd | アバランシエフオトダイオ−ドの温度補償回路 |
JPS60211886A (ja) | 1984-04-05 | 1985-10-24 | Nec Corp | アバランシフオトダイオ−ドの製造方法 |
JPS6138975U (ja) * | 1984-08-09 | 1986-03-11 | 株式会社東芝 | 印刷配線板 |
JPH0799782B2 (ja) * | 1985-06-18 | 1995-10-25 | 株式会社ニコン | 半導体光検出装置 |
JPS62239727A (ja) | 1986-04-11 | 1987-10-20 | Nec Corp | アバランシエホトダイオ−ドの利得制御方式 |
JPS62279671A (ja) * | 1986-05-28 | 1987-12-04 | Mitsubishi Electric Corp | 固体撮像装置 |
JPH0828488B2 (ja) * | 1987-07-07 | 1996-03-21 | 富士通株式会社 | 半導体装置 |
JPH01118714A (ja) * | 1987-10-30 | 1989-05-11 | Omron Tateisi Electron Co | 光学式位置検出センサ |
US4948989A (en) | 1989-01-31 | 1990-08-14 | Science Applications International Corporation | Radiation-hardened temperature-compensated voltage reference |
JPH0321082A (ja) * | 1989-06-19 | 1991-01-29 | Fujitsu Ltd | 光受信回路 |
EP0437633B1 (en) * | 1989-08-04 | 2000-11-02 | Canon Kabushiki Kaisha | Photo-electric converter |
JPH04111477A (ja) * | 1990-08-31 | 1992-04-13 | Sumitomo Electric Ind Ltd | 受光素子 |
JPH04256376A (ja) * | 1991-02-08 | 1992-09-11 | Hamamatsu Photonics Kk | アバランシェホトダイオード及びその製造方法 |
JPH05235396A (ja) * | 1992-02-24 | 1993-09-10 | Sumitomo Electric Ind Ltd | 半導体受光装置 |
JP3121100B2 (ja) | 1992-03-25 | 2000-12-25 | 株式会社日立製作所 | 固体撮像装置 |
JPH06224463A (ja) | 1993-01-22 | 1994-08-12 | Mitsubishi Electric Corp | 半導体受光装置 |
JPH0763854A (ja) | 1993-06-16 | 1995-03-10 | Kansei Corp | レーザー送受光装置 |
JP2686036B2 (ja) | 1993-07-09 | 1997-12-08 | 浜松ホトニクス株式会社 | アバランシェフォトダイオードのバイアス回路 |
JP3421103B2 (ja) * | 1993-12-20 | 2003-06-30 | 浜松ホトニクス株式会社 | アバランシェフォトダイオードを用いた光検出回路 |
JPH07263653A (ja) | 1994-03-17 | 1995-10-13 | Hamamatsu Photonics Kk | 固体撮像装置 |
JPH08207281A (ja) * | 1995-02-06 | 1996-08-13 | Canon Inc | インクジェット記録ヘッド |
JPH10247717A (ja) * | 1997-03-04 | 1998-09-14 | Matsushita Electron Corp | 半導体装置 |
JPH11275755A (ja) | 1998-03-19 | 1999-10-08 | Fujitsu Ltd | アバランシェフォトダイオード保護回路を有する光受信回路 |
JP2000171295A (ja) | 1998-12-03 | 2000-06-23 | Nec Corp | Apdバイアス回路 |
JP3668926B2 (ja) | 1999-08-27 | 2005-07-06 | 株式会社ルネサステクノロジ | 光インタコネクション受信モジュール |
US6313459B1 (en) * | 2000-05-31 | 2001-11-06 | Nortel Networks Limited | Method for calibrating and operating an uncooled avalanche photodiode optical receiver |
JP3509851B2 (ja) | 2000-12-28 | 2004-03-22 | サンケン電気株式会社 | 電子回路装置及びこれを使用したスィチング回路装置 |
US20030117121A1 (en) | 2001-12-20 | 2003-06-26 | Prescott Daniel C. | High-side current-sense circuit for precision application |
KR100566197B1 (ko) | 2003-01-02 | 2006-03-29 | 삼성전자주식회사 | Apd 광수신기의 온도 보상 장치 |
JP4223304B2 (ja) * | 2003-03-19 | 2009-02-12 | 三菱電機株式会社 | 光受信器 |
JP3956923B2 (ja) | 2003-09-19 | 2007-08-08 | 住友電気工業株式会社 | アバランシェフォトダイオードのバイアス電圧制御回路 |
JP4399337B2 (ja) | 2004-09-13 | 2010-01-13 | 株式会社フューチャービジョン | 平面パターンを有する基板およびそれを用いた表示装置 |
JP2007266251A (ja) | 2006-03-28 | 2007-10-11 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置 |
EP3002794B1 (en) * | 2006-07-03 | 2020-08-19 | Hamamatsu Photonics K.K. | Photodiode array |
CN200950235Y (zh) | 2006-09-25 | 2007-09-19 | 深圳飞通光电子技术有限公司 | 雪崩光电二极管的温度补偿偏压电路 |
CN200959101Y (zh) | 2006-10-12 | 2007-10-10 | 宁波中科集成电路设计中心有限公司 | 一种雪崩光电二极管的温度补偿装置 |
JP4791334B2 (ja) | 2006-12-11 | 2011-10-12 | 富士通オプティカルコンポーネンツ株式会社 | 光受信装置および光受信装置のバイアス電圧制御方法 |
JP5483544B2 (ja) | 2009-10-21 | 2014-05-07 | 住友電工デバイス・イノベーション株式会社 | 半導体受光装置 |
CN201601136U (zh) | 2010-01-13 | 2010-10-06 | 山东交通职业学院 | 一种用于激光接收电路的温度补偿电路 |
US20120101614A1 (en) | 2010-10-22 | 2012-04-26 | Allan Ghaemi | System and Method for Manufacturing Optical Network Components |
JP5844580B2 (ja) * | 2011-09-05 | 2016-01-20 | 浜松ホトニクス株式会社 | 固体撮像素子及び固体撮像素子の実装構造 |
JP5926921B2 (ja) * | 2011-10-21 | 2016-05-25 | 浜松ホトニクス株式会社 | 光検出装置 |
JP5791461B2 (ja) * | 2011-10-21 | 2015-10-07 | 浜松ホトニクス株式会社 | 光検出装置 |
JP2013164263A (ja) | 2012-02-09 | 2013-08-22 | Mitsubishi Electric Corp | 受光装置及び距離測定装置及び形状測定装置 |
JP5984617B2 (ja) | 2012-10-18 | 2016-09-06 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
DE102013100696B3 (de) | 2013-01-24 | 2013-11-07 | Sick Ag | Optoelektronischer Sensor und Verfahren zur Erfassung von Objekten in einem Überwachungsbereich |
KR101448393B1 (ko) * | 2013-06-27 | 2014-10-08 | 단국대학교 천안캠퍼스 산학협력단 | 의료용 레이저 수신단의 apd 이득 안정화 방법 |
CN103728030A (zh) | 2013-12-20 | 2014-04-16 | 中国科学院合肥物质科学研究院 | Apd温度自适应近红外单光子探测装置 |
US9541656B2 (en) | 2013-12-20 | 2017-01-10 | General Electric Company | System and method for compensating temperature gain variation in radiation detectors |
JP2016061729A (ja) | 2014-09-19 | 2016-04-25 | 株式会社東芝 | 光子検出素子、光子検出装置、及び放射線分析装置 |
CN106033225B (zh) | 2015-03-16 | 2017-08-25 | 苏州旭创科技有限公司 | 低功耗apd偏压控制器与偏压控制方法及光电接收器 |
US10203400B2 (en) * | 2015-07-31 | 2019-02-12 | Avago Technologies International Sales Pte. Limited | Optical measurement system incorporating ambient light component nullification |
US9954124B1 (en) * | 2016-01-08 | 2018-04-24 | Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama In Huntsville | Thermo-compensated silicon photo-multiplier with on-chip temperature sensor |
WO2018021411A1 (ja) | 2016-07-27 | 2018-02-01 | 浜松ホトニクス株式会社 | 光検出装置 |
EP3339886B1 (de) * | 2016-12-22 | 2019-02-13 | Sick AG | Lichtempfänger mit einer vielzahl von lawinenphotodiodenelementen und verfahren zur versorgung mit einer vorspannung |
CA3203465A1 (en) | 2017-01-30 | 2018-08-02 | Medibeacon Inc. | Method for non-invasive monitoring of fluorescent tracer agent with diffuse reflection corrections |
JP6696695B2 (ja) * | 2017-03-16 | 2020-05-20 | 株式会社東芝 | 光検出装置およびこれを用いた被写体検知システム |
JP6741703B2 (ja) | 2017-03-31 | 2020-08-19 | 株式会社デンソー | 光検出器 |
KR102544296B1 (ko) | 2018-09-13 | 2023-06-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 표면발광레이저 소자 및 이를 구비한 표면발광레이저 장치 |
US11513002B2 (en) * | 2018-12-12 | 2022-11-29 | Hamamatsu Photonics K.K. | Light detection device having temperature compensated gain in avalanche photodiode |
JP7454917B2 (ja) | 2018-12-12 | 2024-03-25 | 浜松ホトニクス株式会社 | 光検出装置 |
WO2020121851A1 (ja) | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | 光検出装置 |
US20220020786A1 (en) | 2018-12-12 | 2022-01-20 | Hamamatsu Photonics K.K. | Photodetector and method for manufacturing photodetector |
JP7063854B2 (ja) | 2019-07-03 | 2022-05-09 | 本田技研工業株式会社 | ソフトウェア更新装置、サーバ装置、ソフトウェア更新方法、およびプログラム |
US20230083263A1 (en) | 2021-09-15 | 2023-03-16 | Kabushiki Kaisha Toshiba | Light detector, light detection system, lidar device, and mobile body |
JP7027607B1 (ja) | 2021-10-01 | 2022-03-01 | 株式会社杉原クラフト | ウエイトトレーニングマシン |
-
2019
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004281488A (ja) | 2003-03-13 | 2004-10-07 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP2004303878A (ja) | 2003-03-31 | 2004-10-28 | Nippon Sheet Glass Co Ltd | 受光素子アレイ |
JP2007281509A (ja) | 2007-06-15 | 2007-10-25 | Sanyo Electric Co Ltd | 半導体装置 |
JP2009038157A (ja) | 2007-07-31 | 2009-02-19 | Sumitomo Electric Ind Ltd | 受光素子アレイ、一次元受光素子アレイおよび二次元受光素子アレイ |
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