GB1532262A - Photodiode circuit arrangements - Google Patents

Photodiode circuit arrangements

Info

Publication number
GB1532262A
GB1532262A GB1362076A GB1362076A GB1532262A GB 1532262 A GB1532262 A GB 1532262A GB 1362076 A GB1362076 A GB 1362076A GB 1362076 A GB1362076 A GB 1362076A GB 1532262 A GB1532262 A GB 1532262A
Authority
GB
United Kingdom
Prior art keywords
voltage
diode
photo
circuit
desired operating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1362076A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB1362076A priority Critical patent/GB1532262A/en
Priority to FR7709696A priority patent/FR2346697A1/en
Priority to SE7703765A priority patent/SE432850B/en
Priority to CA275,274A priority patent/CA1072187A/en
Priority to DE19772714719 priority patent/DE2714719C2/en
Priority to US05/945,852 priority patent/US4181863A/en
Publication of GB1532262A publication Critical patent/GB1532262A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60Receivers
    • H04B10/66Non-coherent receivers, e.g. using direct detection
    • H04B10/69Electrical arrangements in the receiver
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02016Circuit arrangements of general character for the devices
    • H01L31/02019Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60Receivers
    • H04B10/66Non-coherent receivers, e.g. using direct detection
    • H04B10/69Electrical arrangements in the receiver
    • H04B10/691Arrangements for optimizing the photodetector in the receiver
    • H04B10/6911Photodiode bias control, e.g. for compensating temperature variations

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

1532262 Avalanche photo-diode circuit FERRANTI Ltd 31 March 1977 [3 April 1976] 13620/76 Heading G1A A photo-diode circuit has an avalanche photodiode D 1 with a positive temperature coefficient of breakdown voltage connected to an electrical supply with the P-N junction reverse biased by a voltage determined by limiting means Z 1 , Z 2 , Z 3 , Z 4 , changeable between two values, the higher equal to its breakdown voltage at a desired operating temperature, the detection of radiation taking place after changing to the lower voltage, the P-N junction being substantially at the desired operating temperature. The output from D 1 is via amplifier A 1 , shunt diode D 2 becoming forward biased when the current is excessive. The higher and lower reverse bias voltages are determined by Zener diodes Z 1 , Z 2 , Z 3 , Z 4 and Z 1 , Z 2 , Z 3 respectively. A sawtooth waveform Fig. 3 (not shown) is applied to the circuit of Fig. 4 with a peak rectifier charging large capacitor C 1 to the lower voltage across Z 1 , Z 2 , Z 3 . Smaller capacitor C 2 charges to the larger voltage. When the supply voltage is switched to zero, C 2 is discharged to acquire the lower voltage of C 1 . In Figs. 5 and 7 (not shown) the limiting means is a voltage regulator. Ways are shown of protecting D 1 from prolonged excessive radiation. In one method in Fig. 4 an auxilliary non-avalanche photo-diode D 1 ' operates a by-pass means 40.
GB1362076A 1976-04-03 1976-04-03 Photodiode circuit arrangements Expired GB1532262A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB1362076A GB1532262A (en) 1976-04-03 1976-04-03 Photodiode circuit arrangements
FR7709696A FR2346697A1 (en) 1976-04-03 1977-03-31 AVALANCHE PHOTODIODE CIRCUIT, ESPECIALLY FOR LASER RADIATION DETECTION
SE7703765A SE432850B (en) 1976-04-03 1977-03-31 CLUTCH DEVICE DOES NOT HAVE A LOW INFOTODIOD THAT HAS A RADIO-SENSITIVE PN TRANSITION
CA275,274A CA1072187A (en) 1976-04-03 1977-03-31 Avalanche photodiode detector
DE19772714719 DE2714719C2 (en) 1976-04-03 1977-04-01 Method for operating an avalanche photodiode
US05/945,852 US4181863A (en) 1976-04-03 1978-09-26 Photodiode circuit arrangements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1362076A GB1532262A (en) 1976-04-03 1976-04-03 Photodiode circuit arrangements

Publications (1)

Publication Number Publication Date
GB1532262A true GB1532262A (en) 1978-11-15

Family

ID=10026359

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1362076A Expired GB1532262A (en) 1976-04-03 1976-04-03 Photodiode circuit arrangements

Country Status (5)

Country Link
CA (1) CA1072187A (en)
DE (1) DE2714719C2 (en)
FR (1) FR2346697A1 (en)
GB (1) GB1532262A (en)
SE (1) SE432850B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113167640A (en) * 2018-12-12 2021-07-23 浜松光子学株式会社 Optical detection device
US11901379B2 (en) 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
US12080822B2 (en) 2018-12-12 2024-09-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533073A1 (en) * 1982-09-14 1984-03-16 Telecommunications Sa METHOD AND DEVICE FOR STABILIZING AN AVALANCHE PHOTODIODE
FR2619959B1 (en) * 1987-08-31 1991-06-14 Thomson Semiconducteurs LIGHT DETECTION CIRCUIT

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644740A (en) * 1969-07-22 1972-02-22 Hughes Aircraft Co Control circuit for biasing a photodetector so as to maintain a selected false alarm rate
DE2257181A1 (en) * 1972-11-22 1974-05-30 Licentia Gmbh CIRCUIT ARRANGEMENT FOR THE CONVERSION OF LIGHT SIGNALS INTO ELECTRICAL SIGNALS WITH AN AVALANCHE PHOTODIOD

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113167640A (en) * 2018-12-12 2021-07-23 浜松光子学株式会社 Optical detection device
US11901379B2 (en) 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
US11927478B2 (en) 2018-12-12 2024-03-12 Hamamatsu Photonics K.K. Light detection device
US12080822B2 (en) 2018-12-12 2024-09-03 Hamamatsu Photonics K.K. Photodetector and method for manufacturing photodetector

Also Published As

Publication number Publication date
FR2346697A1 (en) 1977-10-28
CA1072187A (en) 1980-02-19
DE2714719C2 (en) 1982-09-02
DE2714719A1 (en) 1977-10-06
FR2346697B1 (en) 1982-04-16
SE7703765L (en) 1977-10-04
SE432850B (en) 1984-04-16

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee