SE7703765L - PHOTODIOKRETS - Google Patents

PHOTODIOKRETS

Info

Publication number
SE7703765L
SE7703765L SE7703765A SE7703765A SE7703765L SE 7703765 L SE7703765 L SE 7703765L SE 7703765 A SE7703765 A SE 7703765A SE 7703765 A SE7703765 A SE 7703765A SE 7703765 L SE7703765 L SE 7703765L
Authority
SE
Sweden
Prior art keywords
voltage
diode
photo
circuit
desired operating
Prior art date
Application number
SE7703765A
Other languages
Swedish (sv)
Other versions
SE432850B (en
Inventor
J C Parker
W F Woods
Original Assignee
Ferranti Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti Ltd filed Critical Ferranti Ltd
Publication of SE7703765L publication Critical patent/SE7703765L/en
Publication of SE432850B publication Critical patent/SE432850B/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver
    • H04B10/691—Arrangements for optimizing the photodetector in the receiver
    • H04B10/6911—Photodiode bias control, e.g. for compensating temperature variations

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

1532262 Avalanche photo-diode circuit FERRANTI Ltd 31 March 1977 [3 April 1976] 13620/76 Heading G1A A photo-diode circuit has an avalanche photodiode D 1 with a positive temperature coefficient of breakdown voltage connected to an electrical supply with the P-N junction reverse biased by a voltage determined by limiting means Z 1 , Z 2 , Z 3 , Z 4 , changeable between two values, the higher equal to its breakdown voltage at a desired operating temperature, the detection of radiation taking place after changing to the lower voltage, the P-N junction being substantially at the desired operating temperature. The output from D 1 is via amplifier A 1 , shunt diode D 2 becoming forward biased when the current is excessive. The higher and lower reverse bias voltages are determined by Zener diodes Z 1 , Z 2 , Z 3 , Z 4 and Z 1 , Z 2 , Z 3 respectively. A sawtooth waveform Fig. 3 (not shown) is applied to the circuit of Fig. 4 with a peak rectifier charging large capacitor C 1 to the lower voltage across Z 1 , Z 2 , Z 3 . Smaller capacitor C 2 charges to the larger voltage. When the supply voltage is switched to zero, C 2 is discharged to acquire the lower voltage of C 1 . In Figs. 5 and 7 (not shown) the limiting means is a voltage regulator. Ways are shown of protecting D 1 from prolonged excessive radiation. In one method in Fig. 4 an auxilliary non-avalanche photo-diode D 1 ' operates a by-pass means 40.
SE7703765A 1976-04-03 1977-03-31 CLUTCH DEVICE DOES NOT HAVE A LOW INFOTODIOD THAT HAS A RADIO-SENSITIVE PN TRANSITION SE432850B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1362076A GB1532262A (en) 1976-04-03 1976-04-03 Photodiode circuit arrangements

Publications (2)

Publication Number Publication Date
SE7703765L true SE7703765L (en) 1977-10-04
SE432850B SE432850B (en) 1984-04-16

Family

ID=10026359

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7703765A SE432850B (en) 1976-04-03 1977-03-31 CLUTCH DEVICE DOES NOT HAVE A LOW INFOTODIOD THAT HAS A RADIO-SENSITIVE PN TRANSITION

Country Status (5)

Country Link
CA (1) CA1072187A (en)
DE (1) DE2714719C2 (en)
FR (1) FR2346697A1 (en)
GB (1) GB1532262A (en)
SE (1) SE432850B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533073A1 (en) * 1982-09-14 1984-03-16 Telecommunications Sa METHOD AND DEVICE FOR STABILIZING AN AVALANCHE PHOTODIODE
FR2619959B1 (en) * 1987-08-31 1991-06-14 Thomson Semiconducteurs LIGHT DETECTION CIRCUIT
JP7454917B2 (en) 2018-12-12 2024-03-25 浜松ホトニクス株式会社 light detection device
WO2020121852A1 (en) 2018-12-12 2020-06-18 浜松ホトニクス株式会社 Photodetector
JPWO2020121858A1 (en) 2018-12-12 2021-11-04 浜松ホトニクス株式会社 Photodetector and manufacturing method of photodetector

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644740A (en) * 1969-07-22 1972-02-22 Hughes Aircraft Co Control circuit for biasing a photodetector so as to maintain a selected false alarm rate
DE2257181A1 (en) * 1972-11-22 1974-05-30 Licentia Gmbh CIRCUIT ARRANGEMENT FOR THE CONVERSION OF LIGHT SIGNALS INTO ELECTRICAL SIGNALS WITH AN AVALANCHE PHOTODIOD

Also Published As

Publication number Publication date
FR2346697A1 (en) 1977-10-28
CA1072187A (en) 1980-02-19
DE2714719C2 (en) 1982-09-02
DE2714719A1 (en) 1977-10-06
FR2346697B1 (en) 1982-04-16
GB1532262A (en) 1978-11-15
SE432850B (en) 1984-04-16

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