JPS55127082A - Bias voltage generating circuit of avalanche photodiode - Google Patents
Bias voltage generating circuit of avalanche photodiodeInfo
- Publication number
- JPS55127082A JPS55127082A JP3453179A JP3453179A JPS55127082A JP S55127082 A JPS55127082 A JP S55127082A JP 3453179 A JP3453179 A JP 3453179A JP 3453179 A JP3453179 A JP 3453179A JP S55127082 A JPS55127082 A JP S55127082A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- apd
- temperature
- compensation
- avalanche photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To use APD as a light receiving element for light communication transmission device by securing a temperature compensation for amplification degree of an avalanche photodiode (APD) and a breakdown voltage temperature dependence characteristic compensation.
CONSTITUTION: A normal pn-junction semiconductor element 20 is provided in a circuit to generate bias voltage with which to set an actuating point of avalanche photodiode (APD), a voltage working on both ends of the element 20 is applied to input terminals 21, 22 of a DC amplifier 23, and a terminal voltage of the element 20 is amlified by a given multiplying factor to output a temperature compensating voltage. The temperature compensating voltage from the amplifier 23 is applied to an input end 24 of a DC boosting circuit 26, and an optimal bias voltage is supplied to APD working as a load by means of a reference setting voltage applied to an input end 25. From availability that the terminal voltage of the element 20 changes linearly against temperature change, the multiplying factor for the amplifier 23 and the boosting ratio of the circuit 26 are set at given values, and a temperature compensation for the amplification degree of APD and a breakdown voltage temperature dependence characteristic-compensation are securely carried out.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3453179A JPS55127082A (en) | 1979-03-23 | 1979-03-23 | Bias voltage generating circuit of avalanche photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3453179A JPS55127082A (en) | 1979-03-23 | 1979-03-23 | Bias voltage generating circuit of avalanche photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55127082A true JPS55127082A (en) | 1980-10-01 |
Family
ID=12416849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3453179A Pending JPS55127082A (en) | 1979-03-23 | 1979-03-23 | Bias voltage generating circuit of avalanche photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55127082A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106767938A (en) * | 2016-12-08 | 2017-05-31 | 西安电子科技大学 | A kind of APD offset voltage temperatures compensation circuit |
| JP2020095015A (en) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Light detector |
| WO2020121854A1 (en) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Light detection device |
| US11901379B2 (en) | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
| US12080822B2 (en) | 2018-12-12 | 2024-09-03 | Hamamatsu Photonics K.K. | Photodetector and method for manufacturing photodetector |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5062389A (en) * | 1973-10-01 | 1975-05-28 |
-
1979
- 1979-03-23 JP JP3453179A patent/JPS55127082A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5062389A (en) * | 1973-10-01 | 1975-05-28 |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106767938A (en) * | 2016-12-08 | 2017-05-31 | 西安电子科技大学 | A kind of APD offset voltage temperatures compensation circuit |
| CN106767938B (en) * | 2016-12-08 | 2019-07-09 | 西安电子科技大学 | A kind of APD offset voltage temperature compensation circuit |
| JP2020095015A (en) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Light detector |
| WO2020121854A1 (en) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Light detection device |
| CN113167640A (en) * | 2018-12-12 | 2021-07-23 | 浜松光子学株式会社 | Optical detection device |
| US11513002B2 (en) | 2018-12-12 | 2022-11-29 | Hamamatsu Photonics K.K. | Light detection device having temperature compensated gain in avalanche photodiode |
| US11561131B2 (en) | 2018-12-12 | 2023-01-24 | Hamamatsu Photonics K.K. | Determination method and light detection device |
| US11901379B2 (en) | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
| US11927478B2 (en) | 2018-12-12 | 2024-03-12 | Hamamatsu Photonics K.K. | Light detection device |
| US12080822B2 (en) | 2018-12-12 | 2024-09-03 | Hamamatsu Photonics K.K. | Photodetector and method for manufacturing photodetector |
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