JPH1187488A5 - - Google Patents

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Publication number
JPH1187488A5
JPH1187488A5 JP1997243993A JP24399397A JPH1187488A5 JP H1187488 A5 JPH1187488 A5 JP H1187488A5 JP 1997243993 A JP1997243993 A JP 1997243993A JP 24399397 A JP24399397 A JP 24399397A JP H1187488 A5 JPH1187488 A5 JP H1187488A5
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JP
Japan
Prior art keywords
region
forming
alignment mark
ith
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997243993A
Other languages
English (en)
Japanese (ja)
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JPH1187488A (ja
JP3519579B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP24399397A external-priority patent/JP3519579B2/ja
Priority to JP24399397A priority Critical patent/JP3519579B2/ja
Priority to TW087100469A priority patent/TW425661B/zh
Priority to US09/028,112 priority patent/US5889335A/en
Priority to KR1019980012551A priority patent/KR100276546B1/ko
Priority to US09/200,469 priority patent/US6218262B1/en
Publication of JPH1187488A publication Critical patent/JPH1187488A/ja
Publication of JP3519579B2 publication Critical patent/JP3519579B2/ja
Application granted granted Critical
Publication of JPH1187488A5 publication Critical patent/JPH1187488A5/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP24399397A 1997-09-09 1997-09-09 半導体装置及びその製造方法 Expired - Fee Related JP3519579B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP24399397A JP3519579B2 (ja) 1997-09-09 1997-09-09 半導体装置及びその製造方法
TW087100469A TW425661B (en) 1997-09-09 1998-01-15 Semiconductor device and method of manufacturing the same
US09/028,112 US5889335A (en) 1997-09-09 1998-02-23 Semiconductor device and method of manufacturing the same
KR1019980012551A KR100276546B1 (ko) 1997-09-09 1998-04-09 반도체장치및그제조방법
US09/200,469 US6218262B1 (en) 1997-09-09 1998-11-27 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24399397A JP3519579B2 (ja) 1997-09-09 1997-09-09 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JPH1187488A JPH1187488A (ja) 1999-03-30
JP3519579B2 JP3519579B2 (ja) 2004-04-19
JPH1187488A5 true JPH1187488A5 (enExample) 2004-08-12

Family

ID=17112127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24399397A Expired - Fee Related JP3519579B2 (ja) 1997-09-09 1997-09-09 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US5889335A (enExample)
JP (1) JP3519579B2 (enExample)
KR (1) KR100276546B1 (enExample)
TW (1) TW425661B (enExample)

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JP2001351837A (ja) * 2000-06-02 2001-12-21 Nec Corp 半導体装置の製造方法
JP2002043412A (ja) * 2000-07-24 2002-02-08 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4832629B2 (ja) 2000-10-04 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置
KR20020056347A (ko) * 2000-12-29 2002-07-10 박종섭 반도체 소자의 제조 방법
JP3665275B2 (ja) * 2001-05-28 2005-06-29 沖電気工業株式会社 位置合わせマークの形成方法
JP2002368080A (ja) * 2001-06-05 2002-12-20 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3875047B2 (ja) * 2001-06-22 2007-01-31 シャープ株式会社 半導体基板の面方位依存性評価方法及びそれを用いた半導体装置
JP4907014B2 (ja) * 2001-06-22 2012-03-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP4761662B2 (ja) * 2001-07-17 2011-08-31 三洋電機株式会社 回路装置の製造方法
KR100398576B1 (ko) * 2001-08-07 2003-09-19 주식회사 하이닉스반도체 정렬 정확도 향상방법
US6638866B1 (en) * 2001-10-18 2003-10-28 Taiwan Semiconductor Manufacturing Company Chemical-mechanical polishing (CMP) process for shallow trench isolation
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JP2003218322A (ja) * 2002-01-24 2003-07-31 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
JP2003243293A (ja) * 2002-02-19 2003-08-29 Mitsubishi Electric Corp 半導体装置の製造方法
US6627510B1 (en) * 2002-03-29 2003-09-30 Sharp Laboratories Of America, Inc. Method of making self-aligned shallow trench isolation
TW569320B (en) * 2002-08-14 2004-01-01 Macronix Int Co Ltd Method for defining a dummy pattern around alignment mark on a wafer
US6750115B1 (en) * 2002-11-25 2004-06-15 Infineon Technologies Ag Method for generating alignment marks for manufacturing MIM capacitors
DE10258420B4 (de) * 2002-12-13 2007-03-01 Infineon Technologies Ag Verfahren zur Herstellung einer Halbleiterspeichereinrichtung mit Charge-trapping-Speicherzellen und vergrabenen Bitleitungen
US6774452B1 (en) 2002-12-17 2004-08-10 Cypress Semiconductor Corporation Semiconductor structure having alignment marks with shallow trench isolation
TWI223375B (en) * 2003-03-19 2004-11-01 Nanya Technology Corp Process for integrating alignment and trench device
US6803291B1 (en) * 2003-03-20 2004-10-12 Taiwan Semiconductor Manufacturing Co., Ltd Method to preserve alignment mark optical integrity
EP1496548B1 (en) * 2003-07-11 2008-01-02 STMicroelectronics S.r.l. Method for manufacturing differential isolation structures in a semiconductor electronic device and corresponding structure
TWI233660B (en) * 2003-10-06 2005-06-01 Macronix Int Co Ltd Overlay mark and method of fabricating the same
JP2005142481A (ja) * 2003-11-10 2005-06-02 Nec Electronics Corp 半導体装置の製造方法
JP2005150251A (ja) 2003-11-12 2005-06-09 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US20050170661A1 (en) * 2004-02-04 2005-08-04 International Business Machines Corporation Method of forming a trench structure
US6943409B1 (en) * 2004-05-24 2005-09-13 International Business Machines Corporation Trench optical device
JP4955222B2 (ja) 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR100620663B1 (ko) * 2005-07-19 2006-09-06 주식회사 하이닉스반도체 반도체 소자의 제조 방법
KR100696761B1 (ko) * 2005-07-29 2007-03-19 주식회사 하이닉스반도체 웨이퍼 마크 형성 방법
US7230342B2 (en) * 2005-08-31 2007-06-12 Atmel Corporation Registration mark within an overlap of dopant regions
KR100630768B1 (ko) * 2005-09-26 2006-10-04 삼성전자주식회사 캡핑층을 구비한 얼라인먼트 키 형성방법 및 이를 이용한반도체 장치의 제조방법
JP4703364B2 (ja) * 2005-10-24 2011-06-15 株式会社東芝 半導体装置及びその製造方法
KR100745898B1 (ko) * 2006-02-21 2007-08-02 주식회사 하이닉스반도체 반도체 소자의 형성 방법
KR100876806B1 (ko) * 2006-07-20 2009-01-07 주식회사 하이닉스반도체 이중 패터닝 기술을 이용한 반도체 소자의 트랜지스터 형성방법
JP5509543B2 (ja) * 2008-06-02 2014-06-04 富士電機株式会社 半導体装置の製造方法
US8125051B2 (en) * 2008-07-03 2012-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Device layout for gate last process
US8598630B2 (en) 2008-10-06 2013-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Photo alignment mark for a gate last process
JP2011129761A (ja) * 2009-12-18 2011-06-30 Elpida Memory Inc 半導体装置の製造方法
US8237297B2 (en) * 2010-04-06 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for providing alignment mark for high-k metal gate process
US9000525B2 (en) 2010-05-19 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for alignment marks
US9312260B2 (en) 2010-05-26 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits and manufacturing methods thereof
US8324743B2 (en) * 2010-06-11 2012-12-04 Macronix International Co., Ltd. Semiconductor device with a structure to protect alignment marks from damage in a planarization process
JP5737922B2 (ja) * 2010-12-14 2015-06-17 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体デバイスの製造方法
US8473888B2 (en) * 2011-03-14 2013-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods of designing integrated circuits
JP6055598B2 (ja) 2012-02-17 2016-12-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR101998666B1 (ko) 2013-06-25 2019-10-02 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9178066B2 (en) * 2013-08-30 2015-11-03 Taiwan Semiconductor Manufacturing Company Limited Methods for forming a semiconductor arrangement with structures having different heights
JP2015070251A (ja) * 2013-10-01 2015-04-13 富士通セミコンダクター株式会社 半導体装置、及び半導体装置の製造方法
KR102066000B1 (ko) 2013-12-11 2020-01-14 삼성전자주식회사 반도체 소자의 제조하는 방법
KR20160015094A (ko) 2014-07-30 2016-02-12 삼성전자주식회사 오버레이 마크, 오버레이 마크를 형성하는 방법 및 오버레이 마크를 이용하여 반도체 소자를 제조하는 방법
CN105914141B (zh) * 2016-06-24 2019-04-30 武汉新芯集成电路制造有限公司 一种形成栅极沟道的方法及对应的半导体结构
JP7163577B2 (ja) * 2017-12-28 2022-11-01 富士電機株式会社 半導体装置の製造方法
US10636744B2 (en) * 2018-08-09 2020-04-28 United Microelectronics Corp. Memory device including alignment mark trench
CN111916425B (zh) * 2019-05-10 2022-12-16 中芯国际集成电路制造(上海)有限公司 半导体形成方法及其结构
US11393769B2 (en) 2020-02-19 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Alignment structure for semiconductor device and method of forming same
DE102020112753A1 (de) 2020-02-19 2021-08-19 Taiwan Semiconductor Manufacturing Co., Ltd. Ausrichtungsstruktur für halbleitervorrichtung und verfahren zu ihrer herstellung
CN113467188B (zh) * 2020-03-30 2022-05-13 长鑫存储技术有限公司 半导体结构及其制备方法
CN113013076B (zh) * 2021-02-25 2022-06-10 长鑫存储技术有限公司 套刻标记的形成方法及半导体结构
US12191258B2 (en) * 2021-12-03 2025-01-07 Nanya Technology Corporation Semiconductor device having integral alignment marks with decoupling features and method for fabricating the same

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