JPH10261946A5 - - Google Patents

Info

Publication number
JPH10261946A5
JPH10261946A5 JP1997066973A JP6697397A JPH10261946A5 JP H10261946 A5 JPH10261946 A5 JP H10261946A5 JP 1997066973 A JP1997066973 A JP 1997066973A JP 6697397 A JP6697397 A JP 6697397A JP H10261946 A5 JPH10261946 A5 JP H10261946A5
Authority
JP
Japan
Prior art keywords
voltage
field effect
effect transistor
circuit
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997066973A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10261946A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9066973A priority Critical patent/JPH10261946A/ja
Priority claimed from JP9066973A external-priority patent/JPH10261946A/ja
Priority to TW086108152A priority patent/TW472445B/zh
Priority to US08/899,306 priority patent/US6031778A/en
Priority to KR1019970045839A priority patent/KR100300144B1/ko
Priority to CNB971222088A priority patent/CN1149737C/zh
Publication of JPH10261946A publication Critical patent/JPH10261946A/ja
Publication of JPH10261946A5 publication Critical patent/JPH10261946A5/ja
Pending legal-status Critical Current

Links

JP9066973A 1997-03-19 1997-03-19 半導体集積回路 Pending JPH10261946A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9066973A JPH10261946A (ja) 1997-03-19 1997-03-19 半導体集積回路
TW086108152A TW472445B (en) 1997-03-19 1997-06-12 Semiconductor integrated circuit
US08/899,306 US6031778A (en) 1997-03-19 1997-07-23 Semiconductor integrated circuit
KR1019970045839A KR100300144B1 (ko) 1997-03-19 1997-09-04 반도체집적회로
CNB971222088A CN1149737C (zh) 1997-03-19 1997-11-05 半导体集成电路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9066973A JPH10261946A (ja) 1997-03-19 1997-03-19 半導体集積回路

Publications (2)

Publication Number Publication Date
JPH10261946A JPH10261946A (ja) 1998-09-29
JPH10261946A5 true JPH10261946A5 (enExample) 2004-11-04

Family

ID=13331485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9066973A Pending JPH10261946A (ja) 1997-03-19 1997-03-19 半導体集積回路

Country Status (5)

Country Link
US (1) US6031778A (enExample)
JP (1) JPH10261946A (enExample)
KR (1) KR100300144B1 (enExample)
CN (1) CN1149737C (enExample)
TW (1) TW472445B (enExample)

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US6552601B1 (en) 2001-05-31 2003-04-22 Sun Microsystems, Inc. Method for supply gating low power electronic devices
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US6489804B1 (en) 2001-06-01 2002-12-03 Sun Microsystems, Inc. Method for coupling logic blocks using low threshold pass transistors
US6621318B1 (en) * 2001-06-01 2003-09-16 Sun Microsystems, Inc. Low voltage latch with uniform sizing
JP2003031681A (ja) * 2001-07-16 2003-01-31 Matsushita Electric Ind Co Ltd 半導体集積回路
US6538471B1 (en) 2001-10-10 2003-03-25 International Business Machines Corporation Multi-threshold flip-flop circuit having an outside feedback
JP2003132683A (ja) 2001-10-23 2003-05-09 Hitachi Ltd 半導体装置
US6731157B2 (en) * 2002-01-15 2004-05-04 Honeywell International Inc. Adaptive threshold voltage control with positive body bias for N and P-channel transistors
JP3951773B2 (ja) * 2002-03-28 2007-08-01 富士通株式会社 リーク電流遮断回路を有する半導体集積回路
JP4122954B2 (ja) * 2002-12-06 2008-07-23 沖電気工業株式会社 半導体集積回路
US7053692B2 (en) * 2002-12-19 2006-05-30 United Memories, Inc. Powergate control using boosted and negative voltages
JP4232477B2 (ja) * 2003-02-13 2009-03-04 パナソニック株式会社 半導体集積回路の検証方法
JP3825756B2 (ja) * 2003-02-17 2006-09-27 富士通株式会社 半導体集積回路
JP2004336010A (ja) 2003-04-16 2004-11-25 Seiko Epson Corp 半導体集積回路、電子機器、及びトランジスタのバックゲート電位制御方法
KR100574967B1 (ko) * 2004-01-29 2006-04-28 삼성전자주식회사 Ｍｔｃｍｏｓ용 제어회로
US7227383B2 (en) 2004-02-19 2007-06-05 Mosaid Delaware, Inc. Low leakage and data retention circuitry
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US7382178B2 (en) 2004-07-09 2008-06-03 Mosaid Technologies Corporation Systems and methods for minimizing static leakage of an integrated circuit
KR100560822B1 (ko) * 2004-09-02 2006-03-13 삼성전자주식회사 리플-프리 내부 전압을 발생하는 반도체 장치
KR100585174B1 (ko) * 2004-10-08 2006-05-30 삼성전자주식회사 데이터 레이트에 따라 전력 소비를 조절할 수 있는 출력드라이버
JP4337709B2 (ja) * 2004-11-01 2009-09-30 日本電気株式会社 半導体集積回路装置
JP2008522258A (ja) * 2004-11-30 2008-06-26 フリースケール セミコンダクター インコーポレイテッド 選択的なパワー・ゲーティングを用いて電力消費を低減する装置及び方法
JP2006172264A (ja) * 2004-12-17 2006-06-29 Matsushita Electric Ind Co Ltd 半導体集積回路装置および信号処理システム
JP4197678B2 (ja) * 2004-12-24 2008-12-17 富士通マイクロエレクトロニクス株式会社 半導体装置
WO2007102188A1 (ja) * 2006-03-03 2007-09-13 Fujitsu Limited 半導体記憶装置
US7821050B1 (en) * 2006-07-31 2010-10-26 Altera Corporation CRAM transistors with high immunity to soft error
JP2008085571A (ja) * 2006-09-27 2008-04-10 Nec Electronics Corp 半導体集積回路
US20080211568A1 (en) * 2007-03-01 2008-09-04 Infineon Technologies Ag MuGFET POWER SWITCH
JP4733084B2 (ja) * 2007-08-09 2011-07-27 ルネサスエレクトロニクス株式会社 半導体装置
JP2008125095A (ja) * 2007-11-29 2008-05-29 Renesas Technology Corp 半導体回路装置
JP2008159246A (ja) * 2007-12-21 2008-07-10 Renesas Technology Corp 半導体装置
KR20100121475A (ko) * 2008-01-30 2010-11-17 에이저 시스템즈 인크 전자 회로의 수율을 증가시키는 방법 및 장치
JP5057350B2 (ja) * 2008-02-27 2012-10-24 パナソニック株式会社 半導体集積回路、およびこれを備えた各種装置
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CN101814315B (zh) * 2010-04-29 2015-02-11 上海华虹宏力半导体制造有限公司 可增加写入裕量的静态随机存取存储器
DE112011102644B4 (de) * 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrierte Halbleiterschaltung
JP2010282721A (ja) * 2010-08-09 2010-12-16 Renesas Electronics Corp 半導体装置
WO2012098900A1 (ja) * 2011-01-20 2012-07-26 パナソニック株式会社 半導体記憶装置
WO2013018217A1 (ja) * 2011-08-03 2013-02-07 富士通株式会社 半導体集積回路及びラッチ回路の駆動方法
KR20130053603A (ko) * 2011-11-15 2013-05-24 에스케이하이닉스 주식회사 증폭 회로 및 반도체 메모리 장치
US9110484B2 (en) 2013-09-24 2015-08-18 Freescale Semiconductor, Inc. Temperature dependent biasing for leakage power reduction
US9472948B2 (en) * 2013-09-30 2016-10-18 Infineon Technologies Ag On chip reverse polarity protection compliant with ISO and ESD requirements
US9672902B1 (en) * 2016-08-03 2017-06-06 Apple Inc. Bit-cell voltage control system
EP3343769B1 (en) * 2016-12-27 2019-02-06 GN Hearing A/S Integrated circuit comprising adjustable back biasing of one or more logic circuit regions
JP6383041B2 (ja) * 2017-04-06 2018-08-29 ルネサスエレクトロニクス株式会社 半導体装置
US10678287B2 (en) * 2018-10-15 2020-06-09 Globalfoundries Inc. Positive and negative full-range back-bias generator circuit structure
JP2019109958A (ja) * 2019-03-07 2019-07-04 ルネサスエレクトロニクス株式会社 半導体装置
CN111725857B (zh) * 2019-03-21 2022-02-15 东莞新能安科技有限公司 开关驱动电路及电池控制电路
US11942779B2 (en) * 2019-10-30 2024-03-26 Skyworks Solutions, Inc. Shutdown mode for bandgap and bias circuit with voltage comparator to reduce leakage current
US11237580B1 (en) * 2020-09-09 2022-02-01 Qualcomm Incorporated Systems and methods providing leakage reduction for power gated domains

Family Cites Families (10)

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JPH0340294A (ja) * 1989-07-05 1991-02-21 Mitsubishi Electric Corp スタティック型半導体記憶装置
JP3184265B2 (ja) * 1991-10-17 2001-07-09 株式会社日立製作所 半導体集積回路装置およびその制御方法
US5461338A (en) * 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
JP3342730B2 (ja) * 1993-03-17 2002-11-11 富士通株式会社 不揮発性半導体記憶装置
JPH07130175A (ja) * 1993-09-10 1995-05-19 Toshiba Corp 半導体記憶装置
KR0169157B1 (ko) * 1993-11-29 1999-02-01 기다오까 다까시 반도체 회로 및 mos-dram
JP3245663B2 (ja) * 1994-01-19 2002-01-15 日本電信電話株式会社 論理回路
JP3125081B2 (ja) * 1994-01-19 2001-01-15 日本電信電話株式会社 論理回路
JPH07296587A (ja) * 1994-04-28 1995-11-10 Sony Corp スタンバイ電流制御回路
JP3549602B2 (ja) * 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置

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