JPH10261946A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPH10261946A
JPH10261946A JP9066973A JP6697397A JPH10261946A JP H10261946 A JPH10261946 A JP H10261946A JP 9066973 A JP9066973 A JP 9066973A JP 6697397 A JP6697397 A JP 6697397A JP H10261946 A JPH10261946 A JP H10261946A
Authority
JP
Japan
Prior art keywords
circuit
integrated circuit
semiconductor integrated
effect transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9066973A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10261946A5 (enExample
Inventor
Hiroyuki Makino
博之 牧野
Hiroaki Suzuki
弘明 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9066973A priority Critical patent/JPH10261946A/ja
Priority to TW086108152A priority patent/TW472445B/zh
Priority to US08/899,306 priority patent/US6031778A/en
Priority to KR1019970045839A priority patent/KR100300144B1/ko
Priority to CNB971222088A priority patent/CN1149737C/zh
Publication of JPH10261946A publication Critical patent/JPH10261946A/ja
Publication of JPH10261946A5 publication Critical patent/JPH10261946A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP9066973A 1997-03-19 1997-03-19 半導体集積回路 Pending JPH10261946A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9066973A JPH10261946A (ja) 1997-03-19 1997-03-19 半導体集積回路
TW086108152A TW472445B (en) 1997-03-19 1997-06-12 Semiconductor integrated circuit
US08/899,306 US6031778A (en) 1997-03-19 1997-07-23 Semiconductor integrated circuit
KR1019970045839A KR100300144B1 (ko) 1997-03-19 1997-09-04 반도체집적회로
CNB971222088A CN1149737C (zh) 1997-03-19 1997-11-05 半导体集成电路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9066973A JPH10261946A (ja) 1997-03-19 1997-03-19 半導体集積回路

Publications (2)

Publication Number Publication Date
JPH10261946A true JPH10261946A (ja) 1998-09-29
JPH10261946A5 JPH10261946A5 (enExample) 2004-11-04

Family

ID=13331485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9066973A Pending JPH10261946A (ja) 1997-03-19 1997-03-19 半導体集積回路

Country Status (5)

Country Link
US (1) US6031778A (enExample)
JP (1) JPH10261946A (enExample)
KR (1) KR100300144B1 (enExample)
CN (1) CN1149737C (enExample)
TW (1) TW472445B (enExample)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064150A (ja) * 2000-06-05 2002-02-28 Mitsubishi Electric Corp 半導体装置
JP2003031681A (ja) * 2001-07-16 2003-01-31 Matsushita Electric Ind Co Ltd 半導体集積回路
JP2004503948A (ja) * 2000-06-12 2004-02-05 インテル・コーポレーション 漏れ電流を減少させる装置および回路ならびにその方法
JP2004248143A (ja) * 2003-02-17 2004-09-02 Fujitsu Ltd 半導体集積回路
JP2005218099A (ja) * 2004-01-29 2005-08-11 Samsung Electronics Co Ltd Ｍｔｃｍｏｓ装置用の遅延部を含む制御回路及び制御方法
US7061270B2 (en) 2003-04-16 2006-06-13 Seiko Epson Corporation Semiconductor integrated circuit, electronic equipment, and transistor back-gate voltage control method
US7272068B2 (en) 2001-10-23 2007-09-18 Hitachi, Ltd. Semiconductor device
JP2007287331A (ja) * 2007-08-09 2007-11-01 Renesas Technology Corp 半導体装置
JP2008125095A (ja) * 2007-11-29 2008-05-29 Renesas Technology Corp 半導体回路装置
JP2008159246A (ja) * 2007-12-21 2008-07-10 Renesas Technology Corp 半導体装置
JP2010282721A (ja) * 2010-08-09 2010-12-16 Renesas Electronics Corp 半導体装置
JP2012039644A (ja) * 2004-02-19 2012-02-23 Mosaid Technologies Corp 低漏出のデータ保持回路を有する集積回路およびその方法
WO2012098900A1 (ja) * 2011-01-20 2012-07-26 パナソニック株式会社 半導体記憶装置
US8854077B2 (en) 2004-02-19 2014-10-07 Conversant Intellectual Property Management Inc. Low leakage and data retention circuitry
JP2017174490A (ja) * 2017-04-06 2017-09-28 ルネサスエレクトロニクス株式会社 半導体装置
JP2018137429A (ja) * 2016-12-27 2018-08-30 ジーエヌ ヒアリング エー／エスＧＮ Ｈｅａｒｉｎｇ Ａ／Ｓ １つ以上の論理回路領域の調節可能なバックバイアス特性を有する集積回路
JP2019109958A (ja) * 2019-03-07 2019-07-04 ルネサスエレクトロニクス株式会社 半導体装置

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3732914B2 (ja) * 1997-02-28 2006-01-11 株式会社ルネサステクノロジ 半導体装置
JP3341681B2 (ja) * 1998-06-12 2002-11-05 日本電気株式会社 半導体集積論理回路
US20020000872A1 (en) * 1998-09-11 2002-01-03 Yibin Ye Method and apparatus for reducing standby leakage current using a leakage control transistor that receives boosted gate drive during an active mode
JP4397062B2 (ja) * 1998-11-27 2010-01-13 株式会社ルネサステクノロジ 電圧発生回路および半導体記憶装置
US6166985A (en) * 1999-04-30 2000-12-26 Intel Corporation Integrated circuit low leakage power circuitry for use with an advanced CMOS process
US6512406B1 (en) * 1999-12-16 2003-01-28 Intel Corporation Backgate biased synchronizing latch
US6744301B1 (en) * 2000-11-07 2004-06-01 Intel Corporation System using body-biased sleep transistors to reduce leakage power while minimizing performance penalties and noise
DE10120790A1 (de) * 2001-04-27 2002-11-21 Infineon Technologies Ag Schaltungsanordnung zur Verringerung der Versorgungsspannung eines Schaltungsteils sowie Verfahren zum Aktivieren eines Schaltungsteils
US6586817B1 (en) * 2001-05-18 2003-07-01 Sun Microsystems, Inc. Device including a resistive path to introduce an equivalent RC circuit
US6583001B1 (en) 2001-05-18 2003-06-24 Sun Microsystems, Inc. Method for introducing an equivalent RC circuit in a MOS device using resistive paths
US6552601B1 (en) 2001-05-31 2003-04-22 Sun Microsystems, Inc. Method for supply gating low power electronic devices
US6489224B1 (en) 2001-05-31 2002-12-03 Sun Microsystems, Inc. Method for engineering the threshold voltage of a device using buried wells
US6624687B1 (en) 2001-05-31 2003-09-23 Sun Microsystems, Inc. Method and structure for supply gated electronic components
US6501295B1 (en) 2001-06-01 2002-12-31 Sun Microsystems, Inc. Overdriven pass transistors
US6605971B1 (en) 2001-06-01 2003-08-12 Sun Microsystems, Inc. Low voltage latch
US6621318B1 (en) * 2001-06-01 2003-09-16 Sun Microsystems, Inc. Low voltage latch with uniform sizing
US6489804B1 (en) 2001-06-01 2002-12-03 Sun Microsystems, Inc. Method for coupling logic blocks using low threshold pass transistors
US6472919B1 (en) 2001-06-01 2002-10-29 Sun Microsystems, Inc. Low voltage latch with uniform stack height
US6538471B1 (en) 2001-10-10 2003-03-25 International Business Machines Corporation Multi-threshold flip-flop circuit having an outside feedback
US6731157B2 (en) * 2002-01-15 2004-05-04 Honeywell International Inc. Adaptive threshold voltage control with positive body bias for N and P-channel transistors
JP3951773B2 (ja) * 2002-03-28 2007-08-01 富士通株式会社 リーク電流遮断回路を有する半導体集積回路
JP4122954B2 (ja) * 2002-12-06 2008-07-23 沖電気工業株式会社 半導体集積回路
US7053692B2 (en) * 2002-12-19 2006-05-30 United Memories, Inc. Powergate control using boosted and negative voltages
JP4232477B2 (ja) * 2003-02-13 2009-03-04 パナソニック株式会社 半導体集積回路の検証方法
JP4894014B2 (ja) * 2004-06-15 2012-03-07 エスティー‐エリクソン、ソシエテ、アノニム 集積回路のための電源の適応制御
US7382178B2 (en) * 2004-07-09 2008-06-03 Mosaid Technologies Corporation Systems and methods for minimizing static leakage of an integrated circuit
KR100560822B1 (ko) * 2004-09-02 2006-03-13 삼성전자주식회사 리플-프리 내부 전압을 발생하는 반도체 장치
KR100585174B1 (ko) * 2004-10-08 2006-05-30 삼성전자주식회사 데이터 레이트에 따라 전력 소비를 조절할 수 있는 출력드라이버
JP4337709B2 (ja) * 2004-11-01 2009-09-30 日本電気株式会社 半導体集積回路装置
EP1834406A1 (en) * 2004-11-30 2007-09-19 Freescale Semiconductor Inc. Apparatus and method for reducing power consumption using selective power gating
JP2006172264A (ja) * 2004-12-17 2006-06-29 Matsushita Electric Ind Co Ltd 半導体集積回路装置および信号処理システム
JP4197678B2 (ja) * 2004-12-24 2008-12-17 富士通マイクロエレクトロニクス株式会社 半導体装置
WO2007102188A1 (ja) * 2006-03-03 2007-09-13 Fujitsu Limited 半導体記憶装置
US7821050B1 (en) * 2006-07-31 2010-10-26 Altera Corporation CRAM transistors with high immunity to soft error
JP2008085571A (ja) * 2006-09-27 2008-04-10 Nec Electronics Corp 半導体集積回路
US20080211568A1 (en) * 2007-03-01 2008-09-04 Infineon Technologies Ag MuGFET POWER SWITCH
EP2240936A1 (en) * 2008-01-30 2010-10-20 Agere Systems, Inc. Method and apparatus for increasing yeild in an electronic circuit
CN101682325B (zh) * 2008-02-27 2013-06-05 松下电器产业株式会社 半导体集成电路以及包括该半导体集成电路的各种装置
AU2009273748A1 (en) * 2008-07-21 2010-01-28 Sato Holdings Corporation A device having data storage
CN101814315B (zh) * 2010-04-29 2015-02-11 上海华虹宏力半导体制造有限公司 可增加写入裕量的静态随机存取存储器
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
WO2013018217A1 (ja) * 2011-08-03 2013-02-07 富士通株式会社 半導体集積回路及びラッチ回路の駆動方法
KR20130053603A (ko) * 2011-11-15 2013-05-24 에스케이하이닉스 주식회사 증폭 회로 및 반도체 메모리 장치
US9110484B2 (en) 2013-09-24 2015-08-18 Freescale Semiconductor, Inc. Temperature dependent biasing for leakage power reduction
US9472948B2 (en) * 2013-09-30 2016-10-18 Infineon Technologies Ag On chip reverse polarity protection compliant with ISO and ESD requirements
US9672902B1 (en) * 2016-08-03 2017-06-06 Apple Inc. Bit-cell voltage control system
US10678287B2 (en) * 2018-10-15 2020-06-09 Globalfoundries Inc. Positive and negative full-range back-bias generator circuit structure
CN111725857B (zh) * 2019-03-21 2022-02-15 东莞新能安科技有限公司 开关驱动电路及电池控制电路
US11942779B2 (en) * 2019-10-30 2024-03-26 Skyworks Solutions, Inc. Shutdown mode for bandgap and bias circuit with voltage comparator to reduce leakage current
US11237580B1 (en) * 2020-09-09 2022-02-01 Qualcomm Incorporated Systems and methods providing leakage reduction for power gated domains

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340294A (ja) * 1989-07-05 1991-02-21 Mitsubishi Electric Corp スタティック型半導体記憶装置
JP3184265B2 (ja) * 1991-10-17 2001-07-09 株式会社日立製作所 半導体集積回路装置およびその制御方法
US5461338A (en) * 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
JP3342730B2 (ja) * 1993-03-17 2002-11-11 富士通株式会社 不揮発性半導体記憶装置
JPH07130175A (ja) * 1993-09-10 1995-05-19 Toshiba Corp 半導体記憶装置
KR0169157B1 (ko) * 1993-11-29 1999-02-01 기다오까 다까시 반도체 회로 및 mos-dram
JP3125081B2 (ja) * 1994-01-19 2001-01-15 日本電信電話株式会社 論理回路
JP3245663B2 (ja) * 1994-01-19 2002-01-15 日本電信電話株式会社 論理回路
JPH07296587A (ja) * 1994-04-28 1995-11-10 Sony Corp スタンバイ電流制御回路
JP3549602B2 (ja) * 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064150A (ja) * 2000-06-05 2002-02-28 Mitsubishi Electric Corp 半導体装置
JP2009207178A (ja) * 2000-06-12 2009-09-10 Intel Corp 漏れ電流を減少させる装置および回路ならびにその方法
JP2004503948A (ja) * 2000-06-12 2004-02-05 インテル・コーポレーション 漏れ電流を減少させる装置および回路ならびにその方法
JP2003031681A (ja) * 2001-07-16 2003-01-31 Matsushita Electric Ind Co Ltd 半導体集積回路
KR100920288B1 (ko) * 2001-10-23 2009-10-08 가부시끼가이샤 르네사스 테크놀로지 반도체 장치
CN102324250A (zh) * 2001-10-23 2012-01-18 瑞萨电子株式会社 半导体器件
US7272068B2 (en) 2001-10-23 2007-09-18 Hitachi, Ltd. Semiconductor device
US9754659B2 (en) 2001-10-23 2017-09-05 Renesas Electronics Corporation Low-power semiconductor device
US9214221B2 (en) 2001-10-23 2015-12-15 Renesas Electronics Corporation Semiconductor device with logic circuit, SRAM circuit and standby state
US10229732B2 (en) 2001-10-23 2019-03-12 Renesas Electronics Corporation Semiconductor device
US7474584B2 (en) 2001-10-23 2009-01-06 Renesas Technology Corp. Semiconductor device
US10573376B2 (en) 2001-10-23 2020-02-25 Renesas Electronics Corporation Lower-power semiconductor memory device
US9928900B2 (en) 2001-10-23 2018-03-27 Renesas Electronics Corporation Low power semiconductor memory device
US7646662B2 (en) 2001-10-23 2010-01-12 Renesas Technology Corp. Semiconductor device
US8711607B2 (en) 2001-10-23 2014-04-29 Renesas Electronics Corporation Semiconductor device
US7961545B2 (en) 2001-10-23 2011-06-14 Renesas Electronics Corporation Semiconductor device
JP2004248143A (ja) * 2003-02-17 2004-09-02 Fujitsu Ltd 半導体集積回路
US7061270B2 (en) 2003-04-16 2006-06-13 Seiko Epson Corporation Semiconductor integrated circuit, electronic equipment, and transistor back-gate voltage control method
JP2005218099A (ja) * 2004-01-29 2005-08-11 Samsung Electronics Co Ltd Ｍｔｃｍｏｓ装置用の遅延部を含む制御回路及び制御方法
JP2012039644A (ja) * 2004-02-19 2012-02-23 Mosaid Technologies Corp 低漏出のデータ保持回路を有する集積回路およびその方法
US8854077B2 (en) 2004-02-19 2014-10-07 Conversant Intellectual Property Management Inc. Low leakage and data retention circuitry
JP2007287331A (ja) * 2007-08-09 2007-11-01 Renesas Technology Corp 半導体装置
JP2008125095A (ja) * 2007-11-29 2008-05-29 Renesas Technology Corp 半導体回路装置
JP2008159246A (ja) * 2007-12-21 2008-07-10 Renesas Technology Corp 半導体装置
JP2010282721A (ja) * 2010-08-09 2010-12-16 Renesas Electronics Corp 半導体装置
US9013939B2 (en) 2011-01-20 2015-04-21 Socionext Inc. Semiconductor memory device
WO2012098900A1 (ja) * 2011-01-20 2012-07-26 パナソニック株式会社 半導体記憶装置
JP2018137429A (ja) * 2016-12-27 2018-08-30 ジーエヌ ヒアリング エー／エスＧＮ Ｈｅａｒｉｎｇ Ａ／Ｓ １つ以上の論理回路領域の調節可能なバックバイアス特性を有する集積回路
JP2017174490A (ja) * 2017-04-06 2017-09-28 ルネサスエレクトロニクス株式会社 半導体装置
JP2019109958A (ja) * 2019-03-07 2019-07-04 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
CN1193846A (zh) 1998-09-23
CN1149737C (zh) 2004-05-12
TW472445B (en) 2002-01-11
KR100300144B1 (ko) 2001-09-03
KR19980079348A (ko) 1998-11-25
US6031778A (en) 2000-02-29

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