CN100592302C - 包括嵌套电压岛的集成电路 - Google Patents
包括嵌套电压岛的集成电路 Download PDFInfo
- Publication number
- CN100592302C CN100592302C CN200480019236A CN200480019236A CN100592302C CN 100592302 C CN100592302 C CN 100592302C CN 200480019236 A CN200480019236 A CN 200480019236A CN 200480019236 A CN200480019236 A CN 200480019236A CN 100592302 C CN100592302 C CN 100592302C
- Authority
- CN
- China
- Prior art keywords
- voltage
- voltage island
- island
- hierarchy
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 208000035795 Hypocalcemic vitamin D-dependent rickets Diseases 0.000 claims description 55
- 208000033584 type 1 vitamin D-dependent rickets Diseases 0.000 claims description 55
- 230000001681 protective effect Effects 0.000 claims description 20
- 238000004891 communication Methods 0.000 claims description 13
- 238000004321 preservation Methods 0.000 claims description 5
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/604,277 US7131074B2 (en) | 2003-07-08 | 2003-07-08 | Nested voltage island architecture |
US10/604,277 | 2003-07-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101142576A CN101142576A (zh) | 2008-03-12 |
CN100592302C true CN100592302C (zh) | 2010-02-24 |
Family
ID=33564147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200480019236A Expired - Fee Related CN100592302C (zh) | 2003-07-08 | 2004-07-08 | 包括嵌套电压岛的集成电路 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7131074B2 (zh) |
EP (1) | EP1649493B1 (zh) |
JP (1) | JP5296313B2 (zh) |
KR (1) | KR100827056B1 (zh) |
CN (1) | CN100592302C (zh) |
WO (1) | WO2005008725A2 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7000214B2 (en) * | 2003-11-19 | 2006-02-14 | International Business Machines Corporation | Method for designing an integrated circuit having multiple voltage domains |
US7589584B1 (en) * | 2005-04-01 | 2009-09-15 | Altera Corporation | Programmable voltage regulator with dynamic recovery circuits |
JP4846272B2 (ja) * | 2005-06-07 | 2011-12-28 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
JP4621113B2 (ja) * | 2005-10-28 | 2011-01-26 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US7705626B2 (en) * | 2006-08-02 | 2010-04-27 | International Business Machines Corporation | Design structure to eliminate step response power supply perturbation |
US7511528B2 (en) * | 2006-08-02 | 2009-03-31 | International Business Machines Corporation | Device and method to eliminate step response power supply perturbation |
CN101593741A (zh) * | 2009-04-22 | 2009-12-02 | 上海宏力半导体制造有限公司 | 片上系统芯片 |
EP2293330B1 (en) * | 2009-09-08 | 2017-06-07 | OCT Circuit Technologies International Limited | On-chip power switches implementation. |
US8502590B2 (en) | 2009-12-14 | 2013-08-06 | The Boeing Company | System and method of controlling devices operating within different voltage ranges |
US8810224B2 (en) * | 2011-10-21 | 2014-08-19 | Qualcomm Incorporated | System and method to regulate voltage |
US9172373B2 (en) * | 2013-09-06 | 2015-10-27 | Globalfoundries U.S. 2 Llc | Verifying partial good voltage island structures |
KR101538458B1 (ko) | 2014-01-03 | 2015-07-23 | 연세대학교 산학협력단 | 3차원 매니코어 프로세서를 위한 전압섬 형성 방법 |
US9570374B2 (en) * | 2014-01-03 | 2017-02-14 | Rockwell Automation Technologies, Inc. | Systems and methods for coupling a semiconductor device of an automation device to a heat sink |
US10812081B1 (en) * | 2019-09-27 | 2020-10-20 | Apple Inc. | Output signal control during retention mode operation |
CN115004366A (zh) * | 2020-01-23 | 2022-09-02 | 华为技术有限公司 | 一种芯片装置和无线通信装置 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3021842A (en) * | 1958-11-05 | 1962-02-20 | John F Flood | Hypodermic needle guide |
US3582214A (en) * | 1969-10-31 | 1971-06-01 | James W Loomis | Tool alignment apparatus and method |
US4000948A (en) * | 1975-07-14 | 1977-01-04 | Miller C Frederick | Target method and systems for bonding machines |
US4651732A (en) * | 1983-03-17 | 1987-03-24 | Frederick Philip R | Three-dimensional light guidance system for invasive procedures |
US4571243A (en) * | 1983-05-18 | 1986-02-18 | Edward C. Froning | Needle guidance system |
US5300080A (en) * | 1991-11-01 | 1994-04-05 | David Clayman | Stereotactic instrument guided placement |
NO301999B1 (no) * | 1995-10-12 | 1998-01-05 | Metronor As | Kombinasjon av laser tracker og kamerabasert koordinatmåling |
US5792044A (en) * | 1996-03-22 | 1998-08-11 | Danek Medical, Inc. | Devices and methods for percutaneous surgery |
US5638208A (en) * | 1996-07-23 | 1997-06-10 | Evans & Sutherland Computer Corporation | Projection screen with retro-reflective calibration points, placement tool and method |
US5838882A (en) * | 1996-10-31 | 1998-11-17 | Combustion Engineering, Inc. | Dynamic position tracking and control of robots |
US5810841A (en) * | 1997-01-22 | 1998-09-22 | Minrad Inc. | Energy guided apparatus and method with indication of alignment |
US6041249A (en) * | 1997-03-13 | 2000-03-21 | Siemens Aktiengesellschaft | Device for making a guide path for an instrument on a patient |
US6021343A (en) * | 1997-11-20 | 2000-02-01 | Surgical Navigation Technologies | Image guided awl/tap/screwdriver |
US6308307B1 (en) * | 1998-01-29 | 2001-10-23 | Texas Instruments Incorporated | Method for power routing and distribution in an integrated circuit with multiple interconnect layers |
US6480989B2 (en) * | 1998-06-29 | 2002-11-12 | Lsi Logic Corporation | Integrated circuit design incorporating a power mesh |
US6096049A (en) * | 1998-07-27 | 2000-08-01 | Minrad Inc. | Light guiding device and method |
JP2001110184A (ja) * | 1999-10-14 | 2001-04-20 | Hitachi Ltd | 半導体装置 |
US6615395B1 (en) * | 1999-12-20 | 2003-09-02 | International Business Machines Corporation | Method for handling coupling effects in static timing analysis |
US6720673B2 (en) * | 2001-04-11 | 2004-04-13 | International Business Machines Corporation | Voltage island fencing |
US6584596B2 (en) * | 2001-09-24 | 2003-06-24 | International Business Machines Corporation | Method of designing a voltage partitioned solder-bump package |
US6631502B2 (en) * | 2002-01-16 | 2003-10-07 | International Business Machines Corporation | Method of analyzing integrated circuit power distribution in chips containing voltage islands |
US6820240B2 (en) * | 2002-09-25 | 2004-11-16 | International Business Machines Corporation | Voltage island chip implementation |
JP4493597B2 (ja) * | 2003-11-05 | 2010-06-30 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Iddq電流測定のためのホット・スイッチ可能な電圧バス |
-
2003
- 2003-07-08 US US10/604,277 patent/US7131074B2/en not_active Expired - Lifetime
-
2004
- 2004-07-08 EP EP04777801.4A patent/EP1649493B1/en not_active Expired - Lifetime
- 2004-07-08 WO PCT/US2004/021943 patent/WO2005008725A2/en active Application Filing
- 2004-07-08 CN CN200480019236A patent/CN100592302C/zh not_active Expired - Fee Related
- 2004-07-08 JP JP2006518914A patent/JP5296313B2/ja not_active Expired - Fee Related
- 2004-07-08 KR KR1020067000054A patent/KR100827056B1/ko not_active IP Right Cessation
Non-Patent Citations (2)
Title |
---|
Managing power and performance for system-on-chip designsusing Voltage Islands. David E.Lackey etc.Computer Aided Design, 2002. ICCAD 2002. IEEE/ACM International Conference on. 2002 |
Managing power and performance for system-on-chip designsusing Voltage Islands. David E.Lackey etc.Computer Aided Design, 2002. ICCAD 2002. IEEE/ACM International Conference on. 2002 * |
Also Published As
Publication number | Publication date |
---|---|
EP1649493A2 (en) | 2006-04-26 |
WO2005008725A2 (en) | 2005-01-27 |
KR100827056B1 (ko) | 2008-05-02 |
US7131074B2 (en) | 2006-10-31 |
WO2005008725A3 (en) | 2006-11-23 |
US20050010887A1 (en) | 2005-01-13 |
JP5296313B2 (ja) | 2013-09-25 |
KR20060034270A (ko) | 2006-04-21 |
CN101142576A (zh) | 2008-03-12 |
EP1649493A4 (en) | 2010-04-14 |
JP2007531244A (ja) | 2007-11-01 |
EP1649493B1 (en) | 2016-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100592302C (zh) | 包括嵌套电压岛的集成电路 | |
EP1537581B1 (en) | Method for reducing power consumption in a state retaining circuit, state retaining circuit and electronic device | |
US7603634B2 (en) | Various methods and apparatuses to preserve a logic state for a volatile latch circuit | |
US20170309327A1 (en) | Semiconductor integrated circuit device and system | |
US8406075B2 (en) | Ultra-low leakage memory architecture | |
US7800400B2 (en) | Configuration random access memory | |
US9025404B1 (en) | Semiconductor device with reduced leakage current and method for manufacture of the same | |
US7880526B2 (en) | Level Shifter, standard cell, system and method for level shifting | |
CN204791989U (zh) | 耐高电压的字线驱动器和包含该字线驱动器的存储器及其系统 | |
EP2732467B1 (en) | Compact and robust level shifter layout design | |
CN102906665A (zh) | 具有多种低功率模式的数据处理器 | |
CN106936409B (zh) | 面积优化的保持触发器实施 | |
JP2010251445A (ja) | 半導体装置およびそれを用いた情報処理装置 | |
CN106558334A (zh) | 一种sram存储单元、sram存储器及其控制方法 | |
JP5172233B2 (ja) | 半導体集積回路装置 | |
WO2014158200A1 (en) | Semiconductor device with reduced leakage current and method for manufacture the same | |
US6097043A (en) | Semiconductor integrated circuit and supply method for supplying multiple supply voltages in a semiconductor integrated circuit | |
US20140035664A1 (en) | Voltage providing circuit | |
Goel et al. | Area efficient diode and on transistor inter‐changeable power gating scheme with trim options for SRAM design in nano‐complementary metal oxide semiconductor technology | |
CN105793926B (zh) | 具有双电压非对称存储器单元的芯片及其操作方法和装置 | |
US9461161B1 (en) | Memory element circuitry with minimum oxide definition width |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171103 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171103 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100224 |