KR100300144B1 - 반도체집적회로 - Google Patents

반도체집적회로 Download PDF

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Publication number
KR100300144B1
KR100300144B1 KR1019970045839A KR19970045839A KR100300144B1 KR 100300144 B1 KR100300144 B1 KR 100300144B1 KR 1019970045839 A KR1019970045839 A KR 1019970045839A KR 19970045839 A KR19970045839 A KR 19970045839A KR 100300144 B1 KR100300144 B1 KR 100300144B1
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KR
South Korea
Prior art keywords
circuit
voltage
integrated circuit
semiconductor integrated
booster
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970045839A
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English (en)
Korean (ko)
Other versions
KR19980079348A (ko
Inventor
히로시 마키노
히로아키 스즈키
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR19980079348A publication Critical patent/KR19980079348A/ko
Application granted granted Critical
Publication of KR100300144B1 publication Critical patent/KR100300144B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019970045839A 1997-03-19 1997-09-04 반도체집적회로 Expired - Fee Related KR100300144B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9066973A JPH10261946A (ja) 1997-03-19 1997-03-19 半導体集積回路
JP97-066973 1997-03-19

Publications (2)

Publication Number Publication Date
KR19980079348A KR19980079348A (ko) 1998-11-25
KR100300144B1 true KR100300144B1 (ko) 2001-09-03

Family

ID=13331485

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970045839A Expired - Fee Related KR100300144B1 (ko) 1997-03-19 1997-09-04 반도체집적회로

Country Status (5)

Country Link
US (1) US6031778A (enExample)
JP (1) JPH10261946A (enExample)
KR (1) KR100300144B1 (enExample)
CN (1) CN1149737C (enExample)
TW (1) TW472445B (enExample)

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US6586817B1 (en) 2001-05-18 2003-07-01 Sun Microsystems, Inc. Device including a resistive path to introduce an equivalent RC circuit
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US6489224B1 (en) 2001-05-31 2002-12-03 Sun Microsystems, Inc. Method for engineering the threshold voltage of a device using buried wells
US6624687B1 (en) 2001-05-31 2003-09-23 Sun Microsystems, Inc. Method and structure for supply gated electronic components
US6552601B1 (en) 2001-05-31 2003-04-22 Sun Microsystems, Inc. Method for supply gating low power electronic devices
US6489804B1 (en) 2001-06-01 2002-12-03 Sun Microsystems, Inc. Method for coupling logic blocks using low threshold pass transistors
US6621318B1 (en) * 2001-06-01 2003-09-16 Sun Microsystems, Inc. Low voltage latch with uniform sizing
US6472919B1 (en) 2001-06-01 2002-10-29 Sun Microsystems, Inc. Low voltage latch with uniform stack height
US6605971B1 (en) 2001-06-01 2003-08-12 Sun Microsystems, Inc. Low voltage latch
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US6731157B2 (en) * 2002-01-15 2004-05-04 Honeywell International Inc. Adaptive threshold voltage control with positive body bias for N and P-channel transistors
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JP4122954B2 (ja) * 2002-12-06 2008-07-23 沖電気工業株式会社 半導体集積回路
US7053692B2 (en) * 2002-12-19 2006-05-30 United Memories, Inc. Powergate control using boosted and negative voltages
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JP3825756B2 (ja) * 2003-02-17 2006-09-27 富士通株式会社 半導体集積回路
JP2004336010A (ja) 2003-04-16 2004-11-25 Seiko Epson Corp 半導体集積回路、電子機器、及びトランジスタのバックゲート電位制御方法
KR100574967B1 (ko) * 2004-01-29 2006-04-28 삼성전자주식회사 Ｍｔｃｍｏｓ용 제어회로
JP2007536771A (ja) * 2004-02-19 2007-12-13 モスエイド テクノロジーズ コーポレーション 低漏出のデータ保持回路
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KR100585174B1 (ko) * 2004-10-08 2006-05-30 삼성전자주식회사 데이터 레이트에 따라 전력 소비를 조절할 수 있는 출력드라이버
JP4337709B2 (ja) * 2004-11-01 2009-09-30 日本電気株式会社 半導体集積回路装置
CN101069350B (zh) * 2004-11-30 2012-05-23 飞思卡尔半导体公司 使用选择性电源选通来降低功耗的设备和方法
JP2006172264A (ja) * 2004-12-17 2006-06-29 Matsushita Electric Ind Co Ltd 半導体集積回路装置および信号処理システム
JP4197678B2 (ja) * 2004-12-24 2008-12-17 富士通マイクロエレクトロニクス株式会社 半導体装置
JPWO2007102188A1 (ja) * 2006-03-03 2009-07-23 富士通株式会社 半導体記憶装置
US7821050B1 (en) * 2006-07-31 2010-10-26 Altera Corporation CRAM transistors with high immunity to soft error
JP2008085571A (ja) * 2006-09-27 2008-04-10 Nec Electronics Corp 半導体集積回路
US20080211568A1 (en) * 2007-03-01 2008-09-04 Infineon Technologies Ag MuGFET POWER SWITCH
JP4733084B2 (ja) * 2007-08-09 2011-07-27 ルネサスエレクトロニクス株式会社 半導体装置
JP2008125095A (ja) * 2007-11-29 2008-05-29 Renesas Technology Corp 半導体回路装置
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CN101682325B (zh) * 2008-02-27 2013-06-05 松下电器产业株式会社 半导体集成电路以及包括该半导体集成电路的各种装置
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JP2010282721A (ja) * 2010-08-09 2010-12-16 Renesas Electronics Corp 半導体装置
WO2012098900A1 (ja) * 2011-01-20 2012-07-26 パナソニック株式会社 半導体記憶装置
WO2013018217A1 (ja) * 2011-08-03 2013-02-07 富士通株式会社 半導体集積回路及びラッチ回路の駆動方法
KR20130053603A (ko) * 2011-11-15 2013-05-24 에스케이하이닉스 주식회사 증폭 회로 및 반도체 메모리 장치
US9110484B2 (en) 2013-09-24 2015-08-18 Freescale Semiconductor, Inc. Temperature dependent biasing for leakage power reduction
US9472948B2 (en) * 2013-09-30 2016-10-18 Infineon Technologies Ag On chip reverse polarity protection compliant with ISO and ESD requirements
US9672902B1 (en) * 2016-08-03 2017-06-06 Apple Inc. Bit-cell voltage control system
DK3343769T3 (da) * 2016-12-27 2019-05-06 Gn Hearing As Integreret kredsløb, der omfatter justerbar spærreforspænding af én eller flere logiske kredsløbsregioner
JP6383041B2 (ja) * 2017-04-06 2018-08-29 ルネサスエレクトロニクス株式会社 半導体装置
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JP2019109958A (ja) * 2019-03-07 2019-07-04 ルネサスエレクトロニクス株式会社 半導体装置
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Also Published As

Publication number Publication date
KR19980079348A (ko) 1998-11-25
CN1149737C (zh) 2004-05-12
JPH10261946A (ja) 1998-09-29
TW472445B (en) 2002-01-11
US6031778A (en) 2000-02-29
CN1193846A (zh) 1998-09-23

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