TW472445B - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit Download PDF

Info

Publication number
TW472445B
TW472445B TW086108152A TW86108152A TW472445B TW 472445 B TW472445 B TW 472445B TW 086108152 A TW086108152 A TW 086108152A TW 86108152 A TW86108152 A TW 86108152A TW 472445 B TW472445 B TW 472445B
Authority
TW
Taiwan
Prior art keywords
circuit
voltage
effect transistor
integrated circuit
semiconductor integrated
Prior art date
Application number
TW086108152A
Other languages
English (en)
Chinese (zh)
Inventor
Hiroshi Makino
Hiroaki Suzuki
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW472445B publication Critical patent/TW472445B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW086108152A 1997-03-19 1997-06-12 Semiconductor integrated circuit TW472445B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9066973A JPH10261946A (ja) 1997-03-19 1997-03-19 半導体集積回路

Publications (1)

Publication Number Publication Date
TW472445B true TW472445B (en) 2002-01-11

Family

ID=13331485

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086108152A TW472445B (en) 1997-03-19 1997-06-12 Semiconductor integrated circuit

Country Status (5)

Country Link
US (1) US6031778A (enExample)
JP (1) JPH10261946A (enExample)
KR (1) KR100300144B1 (enExample)
CN (1) CN1149737C (enExample)
TW (1) TW472445B (enExample)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3732914B2 (ja) * 1997-02-28 2006-01-11 株式会社ルネサステクノロジ 半導体装置
JP3341681B2 (ja) * 1998-06-12 2002-11-05 日本電気株式会社 半導体集積論理回路
US6329874B1 (en) * 1998-09-11 2001-12-11 Intel Corporation Method and apparatus for reducing standby leakage current using a leakage control transistor that receives boosted gate drive during an active mode
JP4397062B2 (ja) * 1998-11-27 2010-01-13 株式会社ルネサステクノロジ 電圧発生回路および半導体記憶装置
US6166985A (en) * 1999-04-30 2000-12-26 Intel Corporation Integrated circuit low leakage power circuitry for use with an advanced CMOS process
US6512406B1 (en) * 1999-12-16 2003-01-28 Intel Corporation Backgate biased synchronizing latch
JP2002064150A (ja) * 2000-06-05 2002-02-28 Mitsubishi Electric Corp 半導体装置
TW501278B (en) * 2000-06-12 2002-09-01 Intel Corp Apparatus and circuit having reduced leakage current and method therefor
US6744301B1 (en) * 2000-11-07 2004-06-01 Intel Corporation System using body-biased sleep transistors to reduce leakage power while minimizing performance penalties and noise
DE10120790A1 (de) * 2001-04-27 2002-11-21 Infineon Technologies Ag Schaltungsanordnung zur Verringerung der Versorgungsspannung eines Schaltungsteils sowie Verfahren zum Aktivieren eines Schaltungsteils
US6583001B1 (en) 2001-05-18 2003-06-24 Sun Microsystems, Inc. Method for introducing an equivalent RC circuit in a MOS device using resistive paths
US6586817B1 (en) * 2001-05-18 2003-07-01 Sun Microsystems, Inc. Device including a resistive path to introduce an equivalent RC circuit
US6489224B1 (en) 2001-05-31 2002-12-03 Sun Microsystems, Inc. Method for engineering the threshold voltage of a device using buried wells
US6624687B1 (en) 2001-05-31 2003-09-23 Sun Microsystems, Inc. Method and structure for supply gated electronic components
US6552601B1 (en) 2001-05-31 2003-04-22 Sun Microsystems, Inc. Method for supply gating low power electronic devices
US6605971B1 (en) 2001-06-01 2003-08-12 Sun Microsystems, Inc. Low voltage latch
US6472919B1 (en) 2001-06-01 2002-10-29 Sun Microsystems, Inc. Low voltage latch with uniform stack height
US6501295B1 (en) 2001-06-01 2002-12-31 Sun Microsystems, Inc. Overdriven pass transistors
US6489804B1 (en) 2001-06-01 2002-12-03 Sun Microsystems, Inc. Method for coupling logic blocks using low threshold pass transistors
US6621318B1 (en) * 2001-06-01 2003-09-16 Sun Microsystems, Inc. Low voltage latch with uniform sizing
JP2003031681A (ja) * 2001-07-16 2003-01-31 Matsushita Electric Ind Co Ltd 半導体集積回路
US6538471B1 (en) 2001-10-10 2003-03-25 International Business Machines Corporation Multi-threshold flip-flop circuit having an outside feedback
JP2003132683A (ja) 2001-10-23 2003-05-09 Hitachi Ltd 半導体装置
US6731157B2 (en) * 2002-01-15 2004-05-04 Honeywell International Inc. Adaptive threshold voltage control with positive body bias for N and P-channel transistors
JP3951773B2 (ja) * 2002-03-28 2007-08-01 富士通株式会社 リーク電流遮断回路を有する半導体集積回路
JP4122954B2 (ja) * 2002-12-06 2008-07-23 沖電気工業株式会社 半導体集積回路
US7053692B2 (en) * 2002-12-19 2006-05-30 United Memories, Inc. Powergate control using boosted and negative voltages
JP4232477B2 (ja) * 2003-02-13 2009-03-04 パナソニック株式会社 半導体集積回路の検証方法
JP3825756B2 (ja) * 2003-02-17 2006-09-27 富士通株式会社 半導体集積回路
JP2004336010A (ja) 2003-04-16 2004-11-25 Seiko Epson Corp 半導体集積回路、電子機器、及びトランジスタのバックゲート電位制御方法
KR100574967B1 (ko) * 2004-01-29 2006-04-28 삼성전자주식회사 Ｍｔｃｍｏｓ용 제어회로
US7227383B2 (en) 2004-02-19 2007-06-05 Mosaid Delaware, Inc. Low leakage and data retention circuitry
CA2595375A1 (en) * 2004-02-19 2005-09-09 Mosaid Technologies Corporation Low leakage and data retention circuitry
WO2005125012A1 (en) * 2004-06-15 2005-12-29 Koninklijke Philips Electronics N.V. Adaptive control of power supply for integrated circuits
US7382178B2 (en) 2004-07-09 2008-06-03 Mosaid Technologies Corporation Systems and methods for minimizing static leakage of an integrated circuit
KR100560822B1 (ko) * 2004-09-02 2006-03-13 삼성전자주식회사 리플-프리 내부 전압을 발생하는 반도체 장치
KR100585174B1 (ko) * 2004-10-08 2006-05-30 삼성전자주식회사 데이터 레이트에 따라 전력 소비를 조절할 수 있는 출력드라이버
JP4337709B2 (ja) * 2004-11-01 2009-09-30 日本電気株式会社 半導体集積回路装置
JP2008522258A (ja) * 2004-11-30 2008-06-26 フリースケール セミコンダクター インコーポレイテッド 選択的なパワー・ゲーティングを用いて電力消費を低減する装置及び方法
JP2006172264A (ja) * 2004-12-17 2006-06-29 Matsushita Electric Ind Co Ltd 半導体集積回路装置および信号処理システム
JP4197678B2 (ja) * 2004-12-24 2008-12-17 富士通マイクロエレクトロニクス株式会社 半導体装置
WO2007102188A1 (ja) * 2006-03-03 2007-09-13 Fujitsu Limited 半導体記憶装置
US7821050B1 (en) * 2006-07-31 2010-10-26 Altera Corporation CRAM transistors with high immunity to soft error
JP2008085571A (ja) * 2006-09-27 2008-04-10 Nec Electronics Corp 半導体集積回路
US20080211568A1 (en) * 2007-03-01 2008-09-04 Infineon Technologies Ag MuGFET POWER SWITCH
JP4733084B2 (ja) * 2007-08-09 2011-07-27 ルネサスエレクトロニクス株式会社 半導体装置
JP2008125095A (ja) * 2007-11-29 2008-05-29 Renesas Technology Corp 半導体回路装置
JP2008159246A (ja) * 2007-12-21 2008-07-10 Renesas Technology Corp 半導体装置
KR20100121475A (ko) * 2008-01-30 2010-11-17 에이저 시스템즈 인크 전자 회로의 수율을 증가시키는 방법 및 장치
JP5057350B2 (ja) * 2008-02-27 2012-10-24 パナソニック株式会社 半導体集積回路、およびこれを備えた各種装置
US20110204148A1 (en) * 2008-07-21 2011-08-25 Stuart Colin Littlechild Device having data storage
CN101814315B (zh) * 2010-04-29 2015-02-11 上海华虹宏力半导体制造有限公司 可增加写入裕量的静态随机存取存储器
DE112011102644B4 (de) * 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrierte Halbleiterschaltung
JP2010282721A (ja) * 2010-08-09 2010-12-16 Renesas Electronics Corp 半導体装置
WO2012098900A1 (ja) * 2011-01-20 2012-07-26 パナソニック株式会社 半導体記憶装置
WO2013018217A1 (ja) * 2011-08-03 2013-02-07 富士通株式会社 半導体集積回路及びラッチ回路の駆動方法
KR20130053603A (ko) * 2011-11-15 2013-05-24 에스케이하이닉스 주식회사 증폭 회로 및 반도체 메모리 장치
US9110484B2 (en) 2013-09-24 2015-08-18 Freescale Semiconductor, Inc. Temperature dependent biasing for leakage power reduction
US9472948B2 (en) * 2013-09-30 2016-10-18 Infineon Technologies Ag On chip reverse polarity protection compliant with ISO and ESD requirements
US9672902B1 (en) * 2016-08-03 2017-06-06 Apple Inc. Bit-cell voltage control system
EP3343769B1 (en) * 2016-12-27 2019-02-06 GN Hearing A/S Integrated circuit comprising adjustable back biasing of one or more logic circuit regions
JP6383041B2 (ja) * 2017-04-06 2018-08-29 ルネサスエレクトロニクス株式会社 半導体装置
US10678287B2 (en) * 2018-10-15 2020-06-09 Globalfoundries Inc. Positive and negative full-range back-bias generator circuit structure
JP2019109958A (ja) * 2019-03-07 2019-07-04 ルネサスエレクトロニクス株式会社 半導体装置
CN111725857B (zh) * 2019-03-21 2022-02-15 东莞新能安科技有限公司 开关驱动电路及电池控制电路
US11942779B2 (en) * 2019-10-30 2024-03-26 Skyworks Solutions, Inc. Shutdown mode for bandgap and bias circuit with voltage comparator to reduce leakage current
US11237580B1 (en) * 2020-09-09 2022-02-01 Qualcomm Incorporated Systems and methods providing leakage reduction for power gated domains

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340294A (ja) * 1989-07-05 1991-02-21 Mitsubishi Electric Corp スタティック型半導体記憶装置
JP3184265B2 (ja) * 1991-10-17 2001-07-09 株式会社日立製作所 半導体集積回路装置およびその制御方法
US5461338A (en) * 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
JP3342730B2 (ja) * 1993-03-17 2002-11-11 富士通株式会社 不揮発性半導体記憶装置
JPH07130175A (ja) * 1993-09-10 1995-05-19 Toshiba Corp 半導体記憶装置
KR0169157B1 (ko) * 1993-11-29 1999-02-01 기다오까 다까시 반도체 회로 및 mos-dram
JP3245663B2 (ja) * 1994-01-19 2002-01-15 日本電信電話株式会社 論理回路
JP3125081B2 (ja) * 1994-01-19 2001-01-15 日本電信電話株式会社 論理回路
JPH07296587A (ja) * 1994-04-28 1995-11-10 Sony Corp スタンバイ電流制御回路
JP3549602B2 (ja) * 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置

Also Published As

Publication number Publication date
KR19980079348A (ko) 1998-11-25
KR100300144B1 (ko) 2001-09-03
CN1193846A (zh) 1998-09-23
JPH10261946A (ja) 1998-09-29
US6031778A (en) 2000-02-29
CN1149737C (zh) 2004-05-12

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees