TW302535B - - Google Patents
Download PDFInfo
- Publication number
- TW302535B TW302535B TW085105869A TW85105869A TW302535B TW 302535 B TW302535 B TW 302535B TW 085105869 A TW085105869 A TW 085105869A TW 85105869 A TW85105869 A TW 85105869A TW 302535 B TW302535 B TW 302535B
- Authority
- TW
- Taiwan
- Prior art keywords
- potential
- voltage
- memory cell
- power supply
- semiconductor device
- Prior art date
Links
- 230000003068 static effect Effects 0.000 claims description 67
- 239000004065 semiconductor Substances 0.000 claims description 56
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 230000035945 sensitivity Effects 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 230000000295 complement effect Effects 0.000 claims description 5
- 238000003491 array Methods 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 241000233866 Fungi Species 0.000 claims 2
- 230000002079 cooperative effect Effects 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 230000002538 fungal effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 230000001360 synchronised effect Effects 0.000 claims 1
- 230000009471 action Effects 0.000 description 15
- 230000002829 reductive effect Effects 0.000 description 15
- 230000007423 decrease Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 230000004913 activation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 102100039435 C-X-C motif chemokine 17 Human genes 0.000 description 1
- 101000889048 Homo sapiens C-X-C motif chemokine 17 Proteins 0.000 description 1
- 101000608752 Phytolacca americana Lectin-C Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000036982 action potential Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/18—Peripheral circuit regions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13634995 | 1995-06-02 | ||
| JP02757496A JP4198201B2 (ja) | 1995-06-02 | 1996-02-15 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW302535B true TW302535B (enExample) | 1997-04-11 |
Family
ID=26365515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085105869A TW302535B (enExample) | 1995-06-02 | 1996-05-17 |
Country Status (4)
| Country | Link |
|---|---|
| US (12) | US5668770A (enExample) |
| JP (1) | JP4198201B2 (enExample) |
| KR (3) | KR100373223B1 (enExample) |
| TW (1) | TW302535B (enExample) |
Families Citing this family (103)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4198201B2 (ja) | 1995-06-02 | 2008-12-17 | 株式会社ルネサステクノロジ | 半導体装置 |
| US5831910A (en) * | 1995-08-18 | 1998-11-03 | Hitachi, Ltd. | Semiconductor integrated circuit utilizing overdriven differential amplifiers |
| JP3560266B2 (ja) | 1995-08-31 | 2004-09-02 | 株式会社ルネサステクノロジ | 半導体装置及び半導体データ装置 |
| JPH10188571A (ja) * | 1996-12-25 | 1998-07-21 | Toshiba Corp | 半導体メモリ回路装置及び半導体メモリセルの書き込み方法 |
| US6115307A (en) | 1997-05-19 | 2000-09-05 | Micron Technology, Inc. | Method and structure for rapid enablement |
| US6157974A (en) * | 1997-12-23 | 2000-12-05 | Lsi Logic Corporation | Hot plugging system which precharging data signal pins to the reference voltage that was generated from voltage detected on the operating mode signal conductor in the bus |
| JP3467416B2 (ja) * | 1998-04-20 | 2003-11-17 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置及びその製造方法 |
| US5986962A (en) * | 1998-07-23 | 1999-11-16 | International Business Machines Corporation | Internal shadow latch |
| JP4030198B2 (ja) * | 1998-08-11 | 2008-01-09 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| US6122760A (en) * | 1998-08-25 | 2000-09-19 | International Business Machines Corporation | Burn in technique for chips containing different types of IC circuitry |
| US6141240A (en) * | 1998-09-17 | 2000-10-31 | Texas Instruments Incorporated | Apparatus and method for static random access memory array |
| KR100472727B1 (ko) * | 1998-12-24 | 2005-05-27 | 주식회사 하이닉스반도체 | 저전압용 인버터 체인 회로_ |
| US6040991A (en) * | 1999-01-04 | 2000-03-21 | International Business Machines Corporation | SRAM memory cell having reduced surface area |
| US6181608B1 (en) * | 1999-03-03 | 2001-01-30 | Intel Corporation | Dual Vt SRAM cell with bitline leakage control |
| FR2793064B1 (fr) * | 1999-04-30 | 2004-01-02 | St Microelectronics Sa | Memoire a courant de fuite reduit |
| JP2001167581A (ja) * | 1999-12-09 | 2001-06-22 | Mitsubishi Electric Corp | 半導体メモリ |
| JP4530464B2 (ja) * | 2000-03-09 | 2010-08-25 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| JP4044721B2 (ja) * | 2000-08-15 | 2008-02-06 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JP5004386B2 (ja) * | 2000-09-18 | 2012-08-22 | 三洋電機株式会社 | 表示装置及びその駆動方法 |
| US6529400B1 (en) * | 2000-12-15 | 2003-03-04 | Lsi Logic Corporation | Source pulsed, dynamic threshold complementary metal oxide semiconductor static RAM cells |
| DE10104701B4 (de) * | 2001-02-02 | 2014-04-17 | Qimonda Ag | Verfahren zum Einschreiben von Daten in einen Speicher eines DRAM und DRAM mit einem Speicher |
| US6946901B2 (en) * | 2001-05-22 | 2005-09-20 | The Regents Of The University Of California | Low-power high-performance integrated circuit and related methods |
| JP2003051191A (ja) * | 2001-05-31 | 2003-02-21 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP5240792B2 (ja) * | 2001-06-05 | 2013-07-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2002368135A (ja) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | 半導体記憶装置 |
| JP2003059273A (ja) | 2001-08-09 | 2003-02-28 | Hitachi Ltd | 半導体記憶装置 |
| JP4327411B2 (ja) * | 2001-08-31 | 2009-09-09 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP2003132683A (ja) | 2001-10-23 | 2003-05-09 | Hitachi Ltd | 半導体装置 |
| JP2003151267A (ja) * | 2001-11-09 | 2003-05-23 | Fujitsu Ltd | 半導体記憶装置 |
| JP2003188351A (ja) * | 2001-12-17 | 2003-07-04 | Hitachi Ltd | 半導体集積回路 |
| US6639827B2 (en) * | 2002-03-12 | 2003-10-28 | Intel Corporation | Low standby power using shadow storage |
| US6894356B2 (en) * | 2002-03-15 | 2005-05-17 | Integrated Device Technology, Inc. | SRAM system having very lightly doped SRAM load transistors for improving SRAM cell stability and method for making the same |
| KR100993517B1 (ko) | 2002-03-27 | 2010-11-10 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 집적 회로, 집적 회로 구동 회로, 및 관련방법 |
| US6724648B2 (en) * | 2002-04-05 | 2004-04-20 | Intel Corporation | SRAM array with dynamic voltage for reducing active leakage power |
| TWI283406B (en) * | 2002-08-28 | 2007-07-01 | Brilliance Semiconductor Inc | Charging-free ultra-low power virtual dynamic random access memory |
| JP2004158084A (ja) | 2002-11-05 | 2004-06-03 | Renesas Technology Corp | 半導体集積回路装置 |
| US6990011B2 (en) * | 2003-05-09 | 2006-01-24 | Stmicroelectronics, Inc. | Memory circuit and method for corrupting stored data |
| US6791886B1 (en) * | 2003-05-30 | 2004-09-14 | International Business Machines Corporation | SRAM cell with bootstrapped power line |
| JP4282388B2 (ja) * | 2003-06-30 | 2009-06-17 | 株式会社東芝 | 半導体記憶装置 |
| US7224600B2 (en) * | 2004-01-08 | 2007-05-29 | Stmicroelectronics, Inc. | Tamper memory cell |
| US6985380B2 (en) * | 2004-03-26 | 2006-01-10 | Intel Corporation | SRAM with forward body biasing to improve read cell stability |
| CA2482254A1 (en) * | 2004-04-07 | 2005-10-07 | Mold-Masters Limited | Modular injection nozzle having a thermal barrier |
| US20050289017A1 (en) * | 2004-05-19 | 2005-12-29 | Efraim Gershom | Network transaction system and method |
| US7349681B2 (en) * | 2004-07-13 | 2008-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-biased high-speed receiver |
| JP4291751B2 (ja) * | 2004-07-23 | 2009-07-08 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置 |
| US7196925B1 (en) * | 2004-08-26 | 2007-03-27 | Cypress Semiconductor Corporation | Memory array with current limiting device for preventing particle induced latch-up |
| JP4553185B2 (ja) | 2004-09-15 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
| TWI290717B (en) * | 2004-11-08 | 2007-12-01 | Zmos Technology Inc | High speed and low power SRAM macro architecture and method |
| KR100616199B1 (ko) * | 2004-12-06 | 2006-08-25 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 전압 발생 제어회로 및 방법 |
| ITVA20050018A1 (it) * | 2005-03-15 | 2006-09-16 | St Microelectronics Srl | Commutatore controllato |
| JP4912016B2 (ja) * | 2005-05-23 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| US7355905B2 (en) | 2005-07-01 | 2008-04-08 | P.A. Semi, Inc. | Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage |
| JP4917767B2 (ja) * | 2005-07-01 | 2012-04-18 | パナソニック株式会社 | 半導体記憶装置 |
| US7313033B2 (en) * | 2005-09-28 | 2007-12-25 | Infineon Technologies Ag | Random access memory including first and second voltage sources |
| JP4929668B2 (ja) * | 2005-10-12 | 2012-05-09 | 富士通セミコンダクター株式会社 | 半導体メモリ |
| US8134644B2 (en) * | 2005-10-15 | 2012-03-13 | Cooper J Carl | Audio synchronizer control and communications method and apparatus |
| US7554843B1 (en) * | 2005-11-04 | 2009-06-30 | Alta Analog, Inc. | Serial bus incorporating high voltage programming signals |
| US20070103195A1 (en) * | 2005-11-07 | 2007-05-10 | Jeong Duk-Sohn | High speed and low power SRAM macro architecture and method |
| US7411853B2 (en) * | 2005-11-17 | 2008-08-12 | Altera Corporation | Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits |
| JP4865360B2 (ja) | 2006-03-01 | 2012-02-01 | パナソニック株式会社 | 半導体記憶装置 |
| JP4936749B2 (ja) * | 2006-03-13 | 2012-05-23 | 株式会社東芝 | 半導体記憶装置 |
| US7292485B1 (en) * | 2006-07-31 | 2007-11-06 | Freescale Semiconductor, Inc. | SRAM having variable power supply and method therefor |
| US7359272B2 (en) * | 2006-08-18 | 2008-04-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit and method for an SRAM with reduced power consumption |
| US7492627B2 (en) * | 2006-11-17 | 2009-02-17 | Freescale Semiconductor, Inc. | Memory with increased write margin bitcells |
| JP5057430B2 (ja) * | 2006-12-18 | 2012-10-24 | ルネサスエレクトロニクス株式会社 | 半導体集積回路とその製造方法 |
| DE102007002150A1 (de) * | 2007-01-15 | 2008-07-31 | Infineon Technologies Ag | Konzept zur Reduktion von Leckströmen von integrierten Schaltungen mit wenigstens einem Transistor |
| US8705300B1 (en) | 2007-02-27 | 2014-04-22 | Altera Corporation | Memory array circuitry with stability enhancement features |
| EP2020658B1 (en) * | 2007-06-29 | 2014-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and semiconductor device |
| US7606061B2 (en) * | 2007-08-07 | 2009-10-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | SRAM device with a power saving module controlled by word line signals |
| JP4775352B2 (ja) * | 2007-09-26 | 2011-09-21 | ソニー株式会社 | 半導体記憶装置の製造方法 |
| JP4420121B2 (ja) * | 2008-03-12 | 2010-02-24 | トヨタ自動車株式会社 | コラム付けニーエアバッグ装置 |
| JP2009231891A (ja) | 2008-03-19 | 2009-10-08 | Nec Electronics Corp | 半導体装置 |
| US20090319029A1 (en) * | 2008-06-04 | 2009-12-24 | Nellix, Inc. | Docking apparatus and methods of use |
| TWI425509B (zh) * | 2009-11-17 | 2014-02-01 | Univ Hsiuping Sci & Tech | 具放電路徑之雙埠靜態隨機存取記憶體 |
| JP2011123970A (ja) * | 2009-12-14 | 2011-06-23 | Renesas Electronics Corp | 半導体記憶装置 |
| KR20200013808A (ko) * | 2009-12-25 | 2020-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 장치, 반도체 장치, 및 전자 장치 |
| WO2011106056A1 (en) | 2010-02-23 | 2011-09-01 | Rambus Inc. | Methods and circuits for dynamically scaling dram power and performance |
| US8320203B2 (en) * | 2010-03-26 | 2012-11-27 | Intel Corporation | Method and system to lower the minimum operating voltage of register files |
| US8531873B2 (en) * | 2011-05-08 | 2013-09-10 | Ben-Gurion University Of The Negev Research And Development Authority | Ultra low power SRAM cell circuit with a supply feedback loop for near and sub threshold operation |
| US20120281459A1 (en) | 2011-05-08 | 2012-11-08 | Ben-Gurion University Of The Negev Research And Development Authority | Ultra low power memory cell with a supply feedback loop configured for minimal leakage operation |
| WO2013057785A1 (ja) * | 2011-10-18 | 2013-04-25 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| US8611169B2 (en) | 2011-12-09 | 2013-12-17 | International Business Machines Corporation | Fine granularity power gating |
| US9093125B2 (en) * | 2012-01-23 | 2015-07-28 | Qualcomm Incorporated | Low voltage write speed bitcell |
| JP5932133B2 (ja) * | 2012-03-30 | 2016-06-08 | インテル コーポレイション | 書込マージンを改善されたメモリセル |
| US9001549B2 (en) * | 2012-05-11 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9153304B2 (en) * | 2012-06-28 | 2015-10-06 | Jaydeep P. Kulkarni | Apparatus for reducing write minimum supply voltage for memory |
| US9111638B2 (en) * | 2012-07-13 | 2015-08-18 | Freescale Semiconductor, Inc. | SRAM bit cell with reduced bit line pre-charge voltage |
| US8817528B2 (en) * | 2012-08-17 | 2014-08-26 | Globalfoundries Inc. | Device comprising a plurality of static random access memory cells and method of operation thereof |
| US9183906B2 (en) | 2012-10-02 | 2015-11-10 | International Business Machines Corporation | Fine granularity power gating |
| US20140119146A1 (en) * | 2012-10-30 | 2014-05-01 | Apple Inc. | Clock Gated Storage Array |
| US8942052B2 (en) | 2012-11-21 | 2015-01-27 | International Business Machines Corporation | Complementary metal-oxide-semiconductor (CMOS) min/max voltage circuit for switching between multiple voltages |
| KR102112367B1 (ko) * | 2013-02-12 | 2020-05-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2015023290A1 (en) * | 2013-08-16 | 2015-02-19 | Intel Corporation | Memory cell with retention using resistive memory |
| JP2014139860A (ja) * | 2014-03-28 | 2014-07-31 | Renesas Electronics Corp | 半導体集積回路装置 |
| JP2016092536A (ja) * | 2014-10-31 | 2016-05-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6436821B2 (ja) * | 2015-03-19 | 2018-12-12 | エイブリック株式会社 | 電流検出回路 |
| US9786357B2 (en) * | 2016-02-17 | 2017-10-10 | Apple Inc. | Bit-cell voltage distribution system |
| US9922701B2 (en) * | 2016-08-08 | 2018-03-20 | Taiwan Semiconductor Manufacturing Company Limited | Pre-charging bit lines through charge-sharing |
| KR102714216B1 (ko) * | 2016-12-06 | 2024-10-10 | 삼성전자주식회사 | 균일한 쓰기 특성을 갖는 에스램 장치 |
| JP6535120B2 (ja) * | 2018-03-29 | 2019-06-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| WO2020112884A1 (en) | 2018-11-30 | 2020-06-04 | Rambus Inc. | Dram device with multiple voltage domains |
| JP2020149746A (ja) * | 2019-03-14 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置 |
| KR102814915B1 (ko) * | 2022-10-25 | 2025-05-30 | 삼성전자주식회사 | 메모리 컨트롤러의 동-작 방법 및 메모리 장치 |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5564686A (en) | 1978-11-08 | 1980-05-15 | Nec Corp | Memory unit |
| JPS57130463A (en) * | 1981-02-06 | 1982-08-12 | Toshiba Corp | Semiconductor memory |
| JPS57130286A (en) * | 1981-02-06 | 1982-08-12 | Fujitsu Ltd | Static semiconductor memory |
| JPS58211391A (ja) | 1982-05-31 | 1983-12-08 | Toshiba Corp | 半導体記憶装置 |
| JPS5968891A (ja) * | 1982-10-12 | 1984-04-18 | Toshiba Corp | 半導体メモリ |
| JPS6038796A (ja) * | 1983-08-12 | 1985-02-28 | Hitachi Ltd | 半導体集積回路装置 |
| JPS62174968A (ja) * | 1986-01-29 | 1987-07-31 | Hitachi Ltd | 半導体装置 |
| JPS63108589A (ja) * | 1986-10-24 | 1988-05-13 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH01166399A (ja) * | 1987-12-23 | 1989-06-30 | Toshiba Corp | スタティック型ランダムアクセスメモリ |
| US5046052A (en) * | 1988-06-01 | 1991-09-03 | Sony Corporation | Internal low voltage transformation circuit of static random access memory |
| JPH0766945B2 (ja) * | 1988-09-06 | 1995-07-19 | 株式会社東芝 | スタティック型メモリ |
| US4872141A (en) * | 1988-09-12 | 1989-10-03 | General Electric Company | Radiation hard memory cell having monocrystalline and non-monocrystalline inverters |
| JPH02108297A (ja) * | 1988-10-18 | 1990-04-20 | Nippon Telegr & Teleph Corp <Ntt> | メモリセル回路 |
| JPH0383289A (ja) | 1989-08-25 | 1991-04-09 | Nec Corp | Ｍｏｓ型半導体記憶装置 |
| JPH07109864B2 (ja) * | 1989-09-13 | 1995-11-22 | シャープ株式会社 | スタティックｒａｍ |
| EP0444602B1 (en) * | 1990-02-26 | 1996-05-15 | Nec Corporation | Decoder circuit |
| DE69117722T2 (de) | 1990-08-06 | 1996-09-19 | Fujitsu Ltd | Übertragungsvorrichtung mit wiederholter schaltfunktion |
| US5226014A (en) * | 1990-12-24 | 1993-07-06 | Ncr Corporation | Low power pseudo-static ROM |
| JPH04276386A (ja) * | 1991-03-01 | 1992-10-01 | Nippon Telegr & Teleph Corp <Ntt> | メモリ回路 |
| JP3110113B2 (ja) * | 1991-11-21 | 2000-11-20 | 株式会社東芝 | スタティック型メモリ |
| US5301147A (en) * | 1993-01-08 | 1994-04-05 | Aptix Corporation | Static random access memory cell with single logic-high voltage level bit-line and address-line drivers |
| JP3042203B2 (ja) | 1992-09-16 | 2000-05-15 | 日本電気株式会社 | スタティック型記憶回路 |
| US5303190A (en) * | 1992-10-27 | 1994-04-12 | Motorola, Inc. | Static random access memory resistant to soft error |
| KR0141933B1 (ko) * | 1994-10-20 | 1998-07-15 | 문정환 | 저전력의 스테이틱 랜덤 억세스 메모리장치 |
| JP4198201B2 (ja) * | 1995-06-02 | 2008-12-17 | 株式会社ルネサステクノロジ | 半導体装置 |
| TW373175B (en) * | 1995-10-31 | 1999-11-01 | Matsushita Electric Mfg Corp | Data maintaining circuit |
| US5841707A (en) * | 1995-11-29 | 1998-11-24 | Texas Instruments Incorporated | Apparatus and method for a programmable interval timing generator in a semiconductor memory |
| US5805496A (en) * | 1996-12-27 | 1998-09-08 | International Business Machines Corporation | Four device SRAM cell with single bitline |
| JP3478953B2 (ja) * | 1997-09-03 | 2003-12-15 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置 |
| JPH11260054A (ja) * | 1998-01-08 | 1999-09-24 | Mitsubishi Electric Corp | ダイナミック型半導体記憶装置 |
| DE19810918C2 (de) | 1998-03-13 | 2002-11-14 | Sachs Race Eng Gmbh | Reibungskupplung |
| US6141240A (en) * | 1998-09-17 | 2000-10-31 | Texas Instruments Incorporated | Apparatus and method for static random access memory array |
| US6058060A (en) * | 1998-12-31 | 2000-05-02 | Invox Technology | Multi-bit-per-cell and analog/multi-level non-volatile memories with improved resolution and signal-to noise ratio |
| DK1158916T3 (da) | 1999-03-09 | 2004-10-04 | Synthes Ag | Knogleplade med koniske gevind |
| JP2002368135A (ja) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | 半導体記憶装置 |
-
1996
- 1996-02-15 JP JP02757496A patent/JP4198201B2/ja not_active Expired - Fee Related
- 1996-05-17 TW TW085105869A patent/TW302535B/zh not_active IP Right Cessation
- 1996-05-30 KR KR1019960018651A patent/KR100373223B1/ko not_active Expired - Lifetime
- 1996-05-31 US US08/655,823 patent/US5668770A/en not_active Expired - Lifetime
-
1997
- 1997-09-15 US US08/929,890 patent/US5894433A/en not_active Expired - Lifetime
-
1999
- 1999-01-19 US US09/232,851 patent/US6108262A/en not_active Expired - Lifetime
- 1999-12-27 US US09/472,147 patent/US6215716B1/en not_active Expired - Lifetime
-
2001
- 2001-02-23 US US09/790,878 patent/US6388936B2/en not_active Expired - Lifetime
- 2001-03-23 KR KR1020010015077A patent/KR100395261B1/ko not_active Expired - Fee Related
-
2002
- 2002-04-16 US US10/122,328 patent/US6469950B2/en not_active Expired - Lifetime
- 2002-09-16 US US10/243,870 patent/US6639828B2/en not_active Expired - Lifetime
-
2003
- 2003-05-23 KR KR1020030032779A patent/KR100395260B1/ko not_active Expired - Fee Related
- 2003-08-11 US US10/637,693 patent/US6917556B2/en not_active Expired - Fee Related
-
2005
- 2005-06-09 US US11/148,354 patent/US7251183B2/en not_active Expired - Fee Related
-
2007
- 2007-03-15 US US11/724,158 patent/US7706205B2/en not_active Expired - Fee Related
-
2010
- 2010-03-11 US US12/722,222 patent/US7978560B2/en not_active Expired - Fee Related
-
2011
- 2011-06-07 US US13/154,919 patent/US8325553B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6388936B2 (en) | 2002-05-14 |
| US20030012049A1 (en) | 2003-01-16 |
| US6917556B2 (en) | 2005-07-12 |
| US20050226077A1 (en) | 2005-10-13 |
| US20040046188A1 (en) | 2004-03-11 |
| US6639828B2 (en) | 2003-10-28 |
| US6215716B1 (en) | 2001-04-10 |
| KR970004020A (ko) | 1997-01-29 |
| US20020110036A1 (en) | 2002-08-15 |
| US20110235439A1 (en) | 2011-09-29 |
| KR100395261B1 (ko) | 2003-08-21 |
| KR100373223B1 (ko) | 2003-07-22 |
| US7978560B2 (en) | 2011-07-12 |
| JPH0951042A (ja) | 1997-02-18 |
| JP4198201B2 (ja) | 2008-12-17 |
| US7706205B2 (en) | 2010-04-27 |
| US6108262A (en) | 2000-08-22 |
| US5668770A (en) | 1997-09-16 |
| US20100165706A1 (en) | 2010-07-01 |
| US20010006476A1 (en) | 2001-07-05 |
| US8325553B2 (en) | 2012-12-04 |
| KR100395260B1 (ko) | 2003-08-21 |
| US20070165448A1 (en) | 2007-07-19 |
| US6469950B2 (en) | 2002-10-22 |
| US7251183B2 (en) | 2007-07-31 |
| US5894433A (en) | 1999-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW302535B (enExample) | ||
| KR100964266B1 (ko) | 저전력 고성능의 메모리셀 및 관련방법 | |
| KR100391020B1 (ko) | 데이터 유지회로 | |
| JP4024975B2 (ja) | データ伝送回路 | |
| JP2002352580A (ja) | ワードライン放電方法及び半導体メモリ装置 | |
| US9183921B2 (en) | Circuit for reducing leakage current | |
| JPS6137704B2 (enExample) | ||
| CN100472651C (zh) | 半导体存储装置 | |
| US7420835B2 (en) | Single-port SRAM with improved read and write margins | |
| JP3159427B2 (ja) | 断熱スイッチング・ビット・ラインを有するメモリ | |
| US6452833B2 (en) | Semiconductor memory device | |
| JP3188634B2 (ja) | データ保持回路 | |
| JPH10289574A (ja) | 電圧発生回路を有した半導体装置 | |
| JPH0935476A (ja) | 可変プレート電圧発生回路を具備する半導体メモリ装置 | |
| JP2001093993A (ja) | 半導体装置 | |
| JPS639095A (ja) | スタテイツク型半導体メモリ | |
| JPH0757461A (ja) | 半導体装置 | |
| JP2006221796A (ja) | 半導体装置 | |
| US11170840B1 (en) | SRAM write assist device and method | |
| JP2000195276A (ja) | 半導体記憶装置 | |
| JPH07244987A (ja) | 半導体メモリ装置 | |
| JP4367715B2 (ja) | 半導体装置 | |
| TW202316430A (zh) | 低功率靜態隨機存取記憶體 | |
| JPH0370320B2 (enExample) | ||
| JPH02220294A (ja) | 半導体装置における出力回路 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |