CN1149737C - 半导体集成电路 - Google Patents

半导体集成电路 Download PDF

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Publication number
CN1149737C
CN1149737C CNB971222088A CN97122208A CN1149737C CN 1149737 C CN1149737 C CN 1149737C CN B971222088 A CNB971222088 A CN B971222088A CN 97122208 A CN97122208 A CN 97122208A CN 1149737 C CN1149737 C CN 1149737C
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CN
China
Prior art keywords
circuit
effect transistor
field effect
mentioned
channel field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB971222088A
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English (en)
Chinese (zh)
Other versions
CN1193846A (zh
Inventor
��Ұ��֮
牧野博之
铃木弘明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1193846A publication Critical patent/CN1193846A/zh
Application granted granted Critical
Publication of CN1149737C publication Critical patent/CN1149737C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB971222088A 1997-03-19 1997-11-05 半导体集成电路 Expired - Fee Related CN1149737C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9066973A JPH10261946A (ja) 1997-03-19 1997-03-19 半導体集積回路
JP66973/1997 1997-03-19
JP66973/97 1997-03-19

Publications (2)

Publication Number Publication Date
CN1193846A CN1193846A (zh) 1998-09-23
CN1149737C true CN1149737C (zh) 2004-05-12

Family

ID=13331485

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB971222088A Expired - Fee Related CN1149737C (zh) 1997-03-19 1997-11-05 半导体集成电路

Country Status (5)

Country Link
US (1) US6031778A (enExample)
JP (1) JPH10261946A (enExample)
KR (1) KR100300144B1 (enExample)
CN (1) CN1149737C (enExample)
TW (1) TW472445B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1790912B (zh) * 2004-11-01 2010-06-23 日本电气株式会社 半导体集成电路装置

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US6512406B1 (en) * 1999-12-16 2003-01-28 Intel Corporation Backgate biased synchronizing latch
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US6744301B1 (en) * 2000-11-07 2004-06-01 Intel Corporation System using body-biased sleep transistors to reduce leakage power while minimizing performance penalties and noise
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US6583001B1 (en) 2001-05-18 2003-06-24 Sun Microsystems, Inc. Method for introducing an equivalent RC circuit in a MOS device using resistive paths
US6489224B1 (en) 2001-05-31 2002-12-03 Sun Microsystems, Inc. Method for engineering the threshold voltage of a device using buried wells
US6624687B1 (en) 2001-05-31 2003-09-23 Sun Microsystems, Inc. Method and structure for supply gated electronic components
US6552601B1 (en) 2001-05-31 2003-04-22 Sun Microsystems, Inc. Method for supply gating low power electronic devices
US6489804B1 (en) 2001-06-01 2002-12-03 Sun Microsystems, Inc. Method for coupling logic blocks using low threshold pass transistors
US6621318B1 (en) * 2001-06-01 2003-09-16 Sun Microsystems, Inc. Low voltage latch with uniform sizing
US6472919B1 (en) 2001-06-01 2002-10-29 Sun Microsystems, Inc. Low voltage latch with uniform stack height
US6605971B1 (en) 2001-06-01 2003-08-12 Sun Microsystems, Inc. Low voltage latch
US6501295B1 (en) 2001-06-01 2002-12-31 Sun Microsystems, Inc. Overdriven pass transistors
JP2003031681A (ja) * 2001-07-16 2003-01-31 Matsushita Electric Ind Co Ltd 半導体集積回路
US6538471B1 (en) 2001-10-10 2003-03-25 International Business Machines Corporation Multi-threshold flip-flop circuit having an outside feedback
JP2003132683A (ja) * 2001-10-23 2003-05-09 Hitachi Ltd 半導体装置
US6731157B2 (en) * 2002-01-15 2004-05-04 Honeywell International Inc. Adaptive threshold voltage control with positive body bias for N and P-channel transistors
JP3951773B2 (ja) * 2002-03-28 2007-08-01 富士通株式会社 リーク電流遮断回路を有する半導体集積回路
JP4122954B2 (ja) * 2002-12-06 2008-07-23 沖電気工業株式会社 半導体集積回路
US7053692B2 (en) * 2002-12-19 2006-05-30 United Memories, Inc. Powergate control using boosted and negative voltages
JP4232477B2 (ja) * 2003-02-13 2009-03-04 パナソニック株式会社 半導体集積回路の検証方法
JP3825756B2 (ja) * 2003-02-17 2006-09-27 富士通株式会社 半導体集積回路
JP2004336010A (ja) 2003-04-16 2004-11-25 Seiko Epson Corp 半導体集積回路、電子機器、及びトランジスタのバックゲート電位制御方法
KR100574967B1 (ko) * 2004-01-29 2006-04-28 삼성전자주식회사 Ｍｔｃｍｏｓ용 제어회로
JP2007536771A (ja) * 2004-02-19 2007-12-13 モスエイド テクノロジーズ コーポレーション 低漏出のデータ保持回路
US7227383B2 (en) 2004-02-19 2007-06-05 Mosaid Delaware, Inc. Low leakage and data retention circuitry
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US7382178B2 (en) 2004-07-09 2008-06-03 Mosaid Technologies Corporation Systems and methods for minimizing static leakage of an integrated circuit
KR100560822B1 (ko) * 2004-09-02 2006-03-13 삼성전자주식회사 리플-프리 내부 전압을 발생하는 반도체 장치
KR100585174B1 (ko) * 2004-10-08 2006-05-30 삼성전자주식회사 데이터 레이트에 따라 전력 소비를 조절할 수 있는 출력드라이버
CN101069350B (zh) * 2004-11-30 2012-05-23 飞思卡尔半导体公司 使用选择性电源选通来降低功耗的设备和方法
JP2006172264A (ja) * 2004-12-17 2006-06-29 Matsushita Electric Ind Co Ltd 半導体集積回路装置および信号処理システム
JP4197678B2 (ja) * 2004-12-24 2008-12-17 富士通マイクロエレクトロニクス株式会社 半導体装置
JPWO2007102188A1 (ja) * 2006-03-03 2009-07-23 富士通株式会社 半導体記憶装置
US7821050B1 (en) * 2006-07-31 2010-10-26 Altera Corporation CRAM transistors with high immunity to soft error
JP2008085571A (ja) * 2006-09-27 2008-04-10 Nec Electronics Corp 半導体集積回路
US20080211568A1 (en) * 2007-03-01 2008-09-04 Infineon Technologies Ag MuGFET POWER SWITCH
JP4733084B2 (ja) * 2007-08-09 2011-07-27 ルネサスエレクトロニクス株式会社 半導体装置
JP2008125095A (ja) * 2007-11-29 2008-05-29 Renesas Technology Corp 半導体回路装置
JP2008159246A (ja) * 2007-12-21 2008-07-10 Renesas Technology Corp 半導体装置
KR20100121475A (ko) * 2008-01-30 2010-11-17 에이저 시스템즈 인크 전자 회로의 수율을 증가시키는 방법 및 장치
CN101682325B (zh) * 2008-02-27 2013-06-05 松下电器产业株式会社 半导体集成电路以及包括该半导体集成电路的各种装置
US20110204148A1 (en) 2008-07-21 2011-08-25 Stuart Colin Littlechild Device having data storage
CN101814315B (zh) * 2010-04-29 2015-02-11 上海华虹宏力半导体制造有限公司 可增加写入裕量的静态随机存取存储器
WO2012017843A1 (en) * 2010-08-06 2012-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP2010282721A (ja) * 2010-08-09 2010-12-16 Renesas Electronics Corp 半導体装置
WO2012098900A1 (ja) * 2011-01-20 2012-07-26 パナソニック株式会社 半導体記憶装置
WO2013018217A1 (ja) * 2011-08-03 2013-02-07 富士通株式会社 半導体集積回路及びラッチ回路の駆動方法
KR20130053603A (ko) * 2011-11-15 2013-05-24 에스케이하이닉스 주식회사 증폭 회로 및 반도체 메모리 장치
US9110484B2 (en) 2013-09-24 2015-08-18 Freescale Semiconductor, Inc. Temperature dependent biasing for leakage power reduction
US9472948B2 (en) * 2013-09-30 2016-10-18 Infineon Technologies Ag On chip reverse polarity protection compliant with ISO and ESD requirements
US9672902B1 (en) * 2016-08-03 2017-06-06 Apple Inc. Bit-cell voltage control system
DK3343769T3 (da) * 2016-12-27 2019-05-06 Gn Hearing As Integreret kredsløb, der omfatter justerbar spærreforspænding af én eller flere logiske kredsløbsregioner
JP6383041B2 (ja) * 2017-04-06 2018-08-29 ルネサスエレクトロニクス株式会社 半導体装置
US10678287B2 (en) * 2018-10-15 2020-06-09 Globalfoundries Inc. Positive and negative full-range back-bias generator circuit structure
JP2019109958A (ja) * 2019-03-07 2019-07-04 ルネサスエレクトロニクス株式会社 半導体装置
CN111725857B (zh) * 2019-03-21 2022-02-15 东莞新能安科技有限公司 开关驱动电路及电池控制电路
US11942779B2 (en) * 2019-10-30 2024-03-26 Skyworks Solutions, Inc. Shutdown mode for bandgap and bias circuit with voltage comparator to reduce leakage current
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1790912B (zh) * 2004-11-01 2010-06-23 日本电气株式会社 半导体集成电路装置

Also Published As

Publication number Publication date
KR19980079348A (ko) 1998-11-25
JPH10261946A (ja) 1998-09-29
TW472445B (en) 2002-01-11
US6031778A (en) 2000-02-29
CN1193846A (zh) 1998-09-23
KR100300144B1 (ko) 2001-09-03

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CF01 Termination of patent right due to non-payment of annual fee