JP2004005777A5 - - Google Patents

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Publication number
JP2004005777A5
JP2004005777A5 JP2002156646A JP2002156646A JP2004005777A5 JP 2004005777 A5 JP2004005777 A5 JP 2004005777A5 JP 2002156646 A JP2002156646 A JP 2002156646A JP 2002156646 A JP2002156646 A JP 2002156646A JP 2004005777 A5 JP2004005777 A5 JP 2004005777A5
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JP
Japan
Prior art keywords
circuit
power supply
voltage
memory array
channel transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002156646A
Other languages
English (en)
Japanese (ja)
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JP4162076B2 (ja
JP2004005777A (ja
Filing date
Publication date
Priority claimed from JP2002156646A external-priority patent/JP4162076B2/ja
Priority to JP2002156646A priority Critical patent/JP4162076B2/ja
Application filed filed Critical
Priority to US10/445,919 priority patent/US6862227B2/en
Publication of JP2004005777A publication Critical patent/JP2004005777A/ja
Priority to US11/049,243 priority patent/US6954396B2/en
Priority to US11/204,024 priority patent/US7333385B2/en
Publication of JP2004005777A5 publication Critical patent/JP2004005777A5/ja
Priority to US12/003,970 priority patent/US7920438B2/en
Publication of JP4162076B2 publication Critical patent/JP4162076B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002156646A 2002-05-30 2002-05-30 半導体記憶装置 Expired - Lifetime JP4162076B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002156646A JP4162076B2 (ja) 2002-05-30 2002-05-30 半導体記憶装置
US10/445,919 US6862227B2 (en) 2002-05-30 2003-05-28 Semiconductor memory device having the operating voltage of the memory cell controlled
US11/049,243 US6954396B2 (en) 2002-05-30 2005-02-03 Semiconductor memory device having the operating voltage of the memory cell controlled
US11/204,024 US7333385B2 (en) 2002-05-30 2005-08-16 Semiconductor memory device having the operating voltage of the memory cell controlled
US12/003,970 US7920438B2 (en) 2002-05-30 2008-01-04 Semiconductor memory device having the operating voltage of the memory cell controlled

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002156646A JP4162076B2 (ja) 2002-05-30 2002-05-30 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2004005777A JP2004005777A (ja) 2004-01-08
JP2004005777A5 true JP2004005777A5 (enExample) 2005-10-06
JP4162076B2 JP4162076B2 (ja) 2008-10-08

Family

ID=29561497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002156646A Expired - Lifetime JP4162076B2 (ja) 2002-05-30 2002-05-30 半導体記憶装置

Country Status (2)

Country Link
US (4) US6862227B2 (enExample)
JP (1) JP4162076B2 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4162076B2 (ja) * 2002-05-30 2008-10-08 株式会社ルネサステクノロジ 半導体記憶装置
EP1537583A1 (en) * 2002-09-02 2005-06-08 Koninklijke Philips Electronics N.V. Device writing to a plurality of rows in a memory matrix simultaneously
JP4290457B2 (ja) * 2003-03-31 2009-07-08 株式会社ルネサステクノロジ 半導体記憶装置
US7654956B2 (en) * 2004-07-13 2010-02-02 Dexcom, Inc. Transcutaneous analyte sensor
FR2877143A1 (fr) * 2004-10-25 2006-04-28 St Microelectronics Sa Cellule de memoire volatile preenregistree
US7085175B2 (en) * 2004-11-18 2006-08-01 Freescale Semiconductor, Inc. Word line driver circuit for a static random access memory and method therefor
US7394708B1 (en) * 2005-03-18 2008-07-01 Xilinx, Inc. Adjustable global tap voltage to improve memory cell yield
US7099230B1 (en) * 2005-04-15 2006-08-29 Texas Instruments Incorporated Virtual ground circuit for reducing SRAM standby power
US20060259840A1 (en) * 2005-05-12 2006-11-16 International Business Machines Corporation Self-test circuitry to determine minimum operating voltage
JP4917767B2 (ja) * 2005-07-01 2012-04-18 パナソニック株式会社 半導体記憶装置
US7872927B2 (en) * 2005-09-27 2011-01-18 Nec Corporation Semiconductor memory device and method of controlling power source
JP4822791B2 (ja) * 2005-10-04 2011-11-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
FR2895556A1 (fr) * 2005-12-26 2007-06-29 St Microelectronics Sa Dispositif de stockage d'informations a memoires sram et procede de mise en oeuvre
JP4865360B2 (ja) * 2006-03-01 2012-02-01 パナソニック株式会社 半導体記憶装置
JP2007328900A (ja) * 2006-05-09 2007-12-20 Matsushita Electric Ind Co Ltd スタティック型半導体記憶装置
US20070286745A1 (en) * 2006-06-09 2007-12-13 Maynard Chance Integrated mixing pump
US7512908B2 (en) * 2006-06-09 2009-03-31 International Business Machines Corporation Method and apparatus for improving SRAM cell stability by using boosted word lines
US7292485B1 (en) 2006-07-31 2007-11-06 Freescale Semiconductor, Inc. SRAM having variable power supply and method therefor
US7679947B2 (en) * 2006-08-02 2010-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with source and bulk coupled to separate voltage supplies
JP2008103028A (ja) * 2006-10-19 2008-05-01 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP5057757B2 (ja) 2006-11-30 2012-10-24 株式会社東芝 半導体集積回路
JP5057430B2 (ja) * 2006-12-18 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路とその製造方法
EP1953762B1 (en) * 2007-01-25 2013-09-18 Imec Memory device with reduced standby power consumption and method for operating same
US8705300B1 (en) * 2007-02-27 2014-04-22 Altera Corporation Memory array circuitry with stability enhancement features
US7616509B2 (en) * 2007-07-13 2009-11-10 Freescale Semiconductor, Inc. Dynamic voltage adjustment for memory
US8099688B2 (en) * 2007-11-19 2012-01-17 International Business Machines Corporation Circuit design
US7864600B2 (en) * 2008-06-19 2011-01-04 Texas Instruments Incorporated Memory cell employing reduced voltage
US8315117B2 (en) * 2009-03-31 2012-11-20 Freescale Semiconductor, Inc. Integrated circuit memory having assisted access and method therefor
US8379466B2 (en) * 2009-03-31 2013-02-19 Freescale Semiconductor, Inc. Integrated circuit having an embedded memory and method for testing the memory
US8634263B2 (en) * 2009-04-30 2014-01-21 Freescale Semiconductor, Inc. Integrated circuit having memory repair information storage and method therefor
JP5331204B2 (ja) * 2009-06-12 2013-10-30 株式会社半導体理工学研究センター ラッチ回路の電圧特性調整方法および半導体装置の電圧特性調整方法並びにラッチ回路の電圧特性調整器
JP2011054255A (ja) * 2009-09-04 2011-03-17 Panasonic Corp 半導体集積回路
JP5395009B2 (ja) * 2010-07-30 2014-01-22 株式会社半導体理工学研究センター サブスレッショルドｓｒａｍのための電源電圧制御回路及び制御方法
US8811068B1 (en) 2011-05-13 2014-08-19 Suvolta, Inc. Integrated circuit devices and methods
US8467233B2 (en) * 2011-06-06 2013-06-18 Texas Instruments Incorporated Asymmetric static random access memory cell with dual stress liner
US8819603B1 (en) 2011-12-15 2014-08-26 Suvolta, Inc. Memory circuits and methods of making and designing the same
US9595307B2 (en) 2014-05-22 2017-03-14 Samsung Electronics Co., Ltd. Volatile memory device and system-on-chip including the same
KR102275497B1 (ko) 2014-10-20 2021-07-09 삼성전자주식회사 전원 경로 제어기를 포함하는 시스템 온 칩 및 전자 기기
JP2018010707A (ja) * 2016-07-12 2018-01-18 ルネサスエレクトロニクス株式会社 半導体装置
JP7195133B2 (ja) * 2018-12-19 2022-12-23 ルネサスエレクトロニクス株式会社 半導体装置
CN109785884A (zh) * 2019-01-15 2019-05-21 上海华虹宏力半导体制造有限公司 静态随机存取存储器存储单元
JP2020149746A (ja) * 2019-03-14 2020-09-17 キオクシア株式会社 半導体記憶装置
US10938381B1 (en) * 2020-04-24 2021-03-02 Qualcomm Incorporated Area efficient slew-rate controlled driver
TWI764759B (zh) * 2021-06-11 2022-05-11 円星科技股份有限公司 具備可靠容限設定的電路模組

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5197033A (en) * 1986-07-18 1993-03-23 Hitachi, Ltd. Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
JPS62289994A (ja) 1986-06-06 1987-12-16 Nec Corp 半導体メモリ装置
EP0320556B1 (en) * 1987-12-15 1991-02-27 International Business Machines Corporation Improved reference voltage generator for cmos memories
JPH06103748A (ja) * 1992-09-16 1994-04-15 Mitsubishi Electric Corp Ｉｃメモリカードの電源制御回路
JPH06139779A (ja) 1992-10-29 1994-05-20 Toshiba Corp 基板バイアス回路
US5394077A (en) * 1993-04-30 1995-02-28 Kabushiki Kaisha Toshiba Internal power supply circuit for use in a semiconductor device
US5493231A (en) * 1994-10-07 1996-02-20 University Of North Carolina Method and apparatus for measuring the barrier height distribution in an insulated gate field effect transistor
JP3135859B2 (ja) * 1997-04-11 2001-02-19 株式会社リコー 基板バイアス回路
JP3853513B2 (ja) * 1998-04-09 2006-12-06 エルピーダメモリ株式会社 ダイナミック型ｒａｍ
JP4587500B2 (ja) * 1998-11-11 2010-11-24 ルネサスエレクトロニクス株式会社 半導体集積回路、メモリモジュール、記憶媒体、及び半導体集積回路の救済方法
JP4392894B2 (ja) 1999-03-12 2010-01-06 Ｏｋｉセミコンダクタ株式会社 半導体記憶装置
JP2001093275A (ja) * 1999-09-20 2001-04-06 Mitsubishi Electric Corp 半導体集積回路装置
US6683805B2 (en) * 2002-02-05 2004-01-27 Ibm Corporation Suppression of leakage currents in VLSI logic and memory circuits
US6493257B1 (en) * 2002-03-27 2002-12-10 International Business Machines Corporation CMOS state saving latch
JP4162076B2 (ja) * 2002-05-30 2008-10-08 株式会社ルネサステクノロジ 半導体記憶装置

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