JP2001312893A5 - - Google Patents

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Publication number
JP2001312893A5
JP2001312893A5 JP2000131388A JP2000131388A JP2001312893A5 JP 2001312893 A5 JP2001312893 A5 JP 2001312893A5 JP 2000131388 A JP2000131388 A JP 2000131388A JP 2000131388 A JP2000131388 A JP 2000131388A JP 2001312893 A5 JP2001312893 A5 JP 2001312893A5
Authority
JP
Japan
Prior art keywords
potential
level shifter
level
semiconductor device
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000131388A
Other languages
English (en)
Japanese (ja)
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JP2001312893A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000131388A priority Critical patent/JP2001312893A/ja
Priority claimed from JP2000131388A external-priority patent/JP2001312893A/ja
Priority to US09/842,693 priority patent/US6477092B2/en
Publication of JP2001312893A publication Critical patent/JP2001312893A/ja
Publication of JP2001312893A5 publication Critical patent/JP2001312893A5/ja
Pending legal-status Critical Current

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JP2000131388A 2000-04-28 2000-04-28 半導体装置 Pending JP2001312893A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000131388A JP2001312893A (ja) 2000-04-28 2000-04-28 半導体装置
US09/842,693 US6477092B2 (en) 2000-04-28 2001-04-27 Level shifter of nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000131388A JP2001312893A (ja) 2000-04-28 2000-04-28 半導体装置

Publications (2)

Publication Number Publication Date
JP2001312893A JP2001312893A (ja) 2001-11-09
JP2001312893A5 true JP2001312893A5 (enExample) 2005-06-30

Family

ID=18640295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000131388A Pending JP2001312893A (ja) 2000-04-28 2000-04-28 半導体装置

Country Status (2)

Country Link
US (1) US6477092B2 (enExample)
JP (1) JP2001312893A (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3532153B2 (ja) * 2000-12-22 2004-05-31 沖電気工業株式会社 レベルシフタ制御回路
JP4373154B2 (ja) 2003-07-18 2009-11-25 株式会社半導体エネルギー研究所 メモリ回路およびそのメモリ回路を有する表示装置、電子機器
JP4419699B2 (ja) * 2004-06-16 2010-02-24 ソニー株式会社 不揮発性半導体メモリ装置およびその動作方法
US20070052468A1 (en) * 2005-09-02 2007-03-08 Etron Technology, Inc. Shift down level shifter
US7265600B2 (en) * 2005-10-04 2007-09-04 International Business Machines Corporation Level shifter system and method to minimize duty cycle error due to voltage differences across power domains
US11817637B2 (en) 2006-11-18 2023-11-14 Rfmicron, Inc. Radio frequency identification (RFID) moisture tag(s) and sensors with extended sensing via capillaries
US10715209B2 (en) 2006-11-18 2020-07-14 RF Micron, Inc. Computing device for processing environmental sensed conditions
US10149177B2 (en) 2006-11-18 2018-12-04 Rfmicron, Inc. Wireless sensor including an RF signal circuit
US12391076B2 (en) 2006-11-18 2025-08-19 Rfmicron, Inc. Pressure based wireless sensor and applications thereof
US10164611B2 (en) 2006-11-18 2018-12-25 Rfmicron, Inc. Method and apparatus for sensing environmental conditions
US12073272B2 (en) 2006-11-18 2024-08-27 Rfmicron, Inc. Generating a response by a radio frequency identification (RFID) tag within a field strength shell of interest
JP2009259395A (ja) * 2009-08-06 2009-11-05 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器
US8217705B2 (en) 2010-05-06 2012-07-10 Micron Technology, Inc. Voltage switching in a memory device
TWI497915B (zh) 2013-04-25 2015-08-21 Ind Tech Res Inst 位準轉換電路及其操作方法
US8971133B1 (en) * 2013-09-26 2015-03-03 Arm Limited Memory device and method of operation of such a memory device
US10746682B2 (en) 2014-10-08 2020-08-18 Rfmicron, Inc. Wireless sensor with multiple sensing options
US9958918B2 (en) * 2016-05-23 2018-05-01 Qualcomm Incorporated Systems and methods to separate power domains in a processing device
US10394299B2 (en) 2016-05-23 2019-08-27 Qualcomm Incorporated Systems and methods to separate power domains in a processing device
KR102870848B1 (ko) * 2020-08-12 2025-10-13 삼성전자주식회사 비휘발성 메모리 및 비휘발성 메모리의 데이터 소거 방법
US11854647B2 (en) * 2021-07-29 2023-12-26 Micron Technology, Inc. Voltage level shifter transition time reduction

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309402A (en) * 1991-02-15 1994-05-03 Nec Corporation Flash electrically erasable and programmable ROM
US5790459A (en) * 1995-08-04 1998-08-04 Micron Quantum Devices, Inc. Memory circuit for performing threshold voltage tests on cells of a memory array
JP3156618B2 (ja) * 1997-01-30 2001-04-16 日本電気株式会社 不揮発性半導体記憶装置
EP0862183B1 (en) * 1997-02-28 2003-05-07 STMicroelectronics S.r.l. Voltage level shifter device, particularly for a non-volatile memory
US6044020A (en) * 1998-07-28 2000-03-28 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memory device with a row decoder circuit

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