JP2000261306A5 - - Google Patents

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Publication number
JP2000261306A5
JP2000261306A5 JP1999060081A JP6008199A JP2000261306A5 JP 2000261306 A5 JP2000261306 A5 JP 2000261306A5 JP 1999060081 A JP1999060081 A JP 1999060081A JP 6008199 A JP6008199 A JP 6008199A JP 2000261306 A5 JP2000261306 A5 JP 2000261306A5
Authority
JP
Japan
Prior art keywords
mos transistor
barrier
conductivity type
current path
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999060081A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000261306A (ja
JP3779484B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP06008199A priority Critical patent/JP3779484B2/ja
Priority claimed from JP06008199A external-priority patent/JP3779484B2/ja
Priority to US09/520,632 priority patent/US6480034B1/en
Publication of JP2000261306A publication Critical patent/JP2000261306A/ja
Priority to US10/234,115 priority patent/US6714615B2/en
Priority to US10/234,106 priority patent/US6700411B2/en
Publication of JP2000261306A5 publication Critical patent/JP2000261306A5/ja
Application granted granted Critical
Publication of JP3779484B2 publication Critical patent/JP3779484B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP06008199A 1999-03-08 1999-03-08 Ｍｏｓ型半導体集積回路 Expired - Fee Related JP3779484B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP06008199A JP3779484B2 (ja) 1999-03-08 1999-03-08 Ｍｏｓ型半導体集積回路
US09/520,632 US6480034B1 (en) 1999-03-08 2000-03-07 MOS-type semiconductor integrated circuit
US10/234,115 US6714615B2 (en) 1999-03-08 2002-09-05 MOS-type semiconductor integrated circuit
US10/234,106 US6700411B2 (en) 1999-03-08 2002-09-05 MOS-type semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06008199A JP3779484B2 (ja) 1999-03-08 1999-03-08 Ｍｏｓ型半導体集積回路

Publications (3)

Publication Number Publication Date
JP2000261306A JP2000261306A (ja) 2000-09-22
JP2000261306A5 true JP2000261306A5 (enExample) 2005-05-26
JP3779484B2 JP3779484B2 (ja) 2006-05-31

Family

ID=13131789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06008199A Expired - Fee Related JP3779484B2 (ja) 1999-03-08 1999-03-08 Ｍｏｓ型半導体集積回路

Country Status (2)

Country Link
US (3) US6480034B1 (enExample)
JP (1) JP3779484B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188361A (ja) * 2001-12-20 2003-07-04 Mitsubishi Electric Corp ゲートアレイ構造の半導体集積回路
US20060093642A1 (en) * 2004-11-03 2006-05-04 Ranade Shrirang V Method of incorporating carbon nanotubes in a medical appliance, a carbon nanotube medical appliance, and a medical appliance coated using carbon nanotube technology
CN105850043B (zh) * 2013-12-27 2019-01-11 松下知识产权经营株式会社 半导体集成电路、锁存电路以及触发器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051323A (ja) * 1983-08-31 1985-03-22 Toshiba Corp Ｃｍｏｓ伝送回路
JP3494469B2 (ja) 1994-05-26 2004-02-09 株式会社ルネサステクノロジ フィールドプログラマブルゲートアレイ

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