JP6671426B2 - 欠陥特定情報を用いるウェハ上の欠陥の検出 - Google Patents
欠陥特定情報を用いるウェハ上の欠陥の検出 Download PDFInfo
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- 230000007547 defect Effects 0.000 title claims description 203
- 238000001514 detection method Methods 0.000 title claims description 78
- 235000012431 wafers Nutrition 0.000 title description 132
- 238000007689 inspection Methods 0.000 claims description 104
- 238000000034 method Methods 0.000 claims description 90
- 238000013461 design Methods 0.000 claims description 24
- 238000012360 testing method Methods 0.000 claims description 14
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10056—Microscopic image
- G06T2207/10061—Microscopic image from scanning electron microscope
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
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Description
Claims (22)
- ウェハ上の欠陥を検出するためのコンピュータ実現方法であって、
ウェハ上のターゲットに関する情報を取得することであり、前記ターゲットは、前記ウェハ上に形成された対象パターンおよび前記対象パターンの位置に対して一意的である既知の位置にある既知の対象欠陥を備え、前記情報は、前記ウェハ上の前記ターゲットを画像化することによって取得される前記ウェハ上の前記ターゲットの画像と、前記ウェハにおける前記対象パターンの前記位置と、前記対象パターンに対する前記既知の対象欠陥の前記位置とを備える、取得することと、
前記対象パターンを備える、前記ウェハまたは別のウェハ上のターゲット候補を探査することと、
前記ターゲット候補の画像における潜在的な対象欠陥位置を特定すること、および前記潜在的な対象欠陥位置の画像に1または複数の検出パラメータを適用することによって前記ターゲット候補内の前記既知の対象欠陥を検出することであって、コンピュータシステムを用いて実行される、検出することと、
を備え、
前記1または複数の検出パラメータが適用される前記画像における1または複数の特性が決定されるケアエリアのサイズは、既知の対象欠陥のサイズに基づいて決定され、かつ前記ケアエリアよりも大きいエリアを用いて前記検出パラメータとしてのターゲット候補に関する閾値が決定される、コンピュータ実現方法。 - ウェハ上の欠陥を検出するためのコンピュータ実現方法を実行するためのコンピュータシステム上で実行可能なプログラム命令を記憶する非一時的コンピュータ読取可能媒体であって、前記コンピュータ実現方法は、
ウェハ上のターゲットに関する情報を取得することであり、前記ターゲットは、前記ウェハ上に形成された対象パターンおよび前記対象パターンの位置に対して一意的である既知の位置にある既知の対象欠陥を備え、前記情報は、前記ウェハ上の前記ターゲットを画像化することによって取得される前記ウェハ上の前記ターゲットの画像と、前記ウェハにおける前記対象パターンの前記位置と、前記対象パターンに対する前記既知の対象欠陥の前記位置とを備えることと、
前記対象パターンを備える、前記ウェハまたは別のウェハ上のターゲット候補を探査することと、
前記ターゲット候補の画像における潜在的な対象欠陥位置を特定すること、および前記潜在的な対象欠陥位置の画像に1または複数の検出パラメータを適用することによって前記ターゲット候補内の前記既知の対象欠陥を検出することと、
を備え、
前記1または複数の検出パラメータが適用される前記画像における1または複数の特性が決定されるケアエリアのサイズは、既知の対象欠陥のサイズに基づいて決定され、かつ前記ケアエリアよりも大きいエリアを用いて前記検出パラメータとしてのターゲット候補に関する閾値が決定される、非一時的コンピュータ読取可能媒体。 - ウェハ上の欠陥を検出するように構成されたシステムであって、
ウェハ上のターゲットに関する情報を取得するように構成された検査サブシステムであって、前記ターゲットは、前記ウェハ上に形成された対象パターンおよび前記対象パターンの位置に対して一意的である既知の位置にある既知の対象欠陥を備え、前記情報は、前記ウェハ上の前記ターゲットを画像化することによって取得される前記ウェハ上の前記ターゲットの画像と、前記ウェハにおける前記対象パターンの前記位置と、前記対象パターンに対する前記既知の対象欠陥の前記位置とを備える検査サブシステムであって、
前記検査サブシステムは、前記ウェハまたは別のウェハ上のターゲット候補を探査するように更に構成され、前記ターゲット候補は前記対象パターンを備える、検査サブシステムと、
前記ターゲット候補の画像における潜在的な対象欠陥位置を特定すること、および前記潜在的な対象欠陥位置の画像に1または複数の検出パラメータを適用することによって前記ターゲット候補内の前記既知の対象欠陥を検出するように構成されたコンピュータシステムとを備え、
前記1または複数の検出パラメータが適用される前記画像における1または複数の特性が決定されるケアエリアのサイズは、既知の対象欠陥のサイズに基づいて決定され、かつ前記ケアエリアよりも大きいエリアを用いて前記検出パラメータとしてのターゲット候補に関する閾値が決定される、システム。 - 前記検査サブシステムが、前記ウェハまたは前記別のウェハに関する設計データを用いることなく前記情報を取得し前記ターゲット候補を探査するように更に構成され、前記コンピュータシステムが、前記ウェハまたは前記別のウェハに関する設計データを用いることなく前記既知の対象欠陥を検出するように更に構成される、請求項3に記載のシステム。
- 前記対象パターンは、前記ウェハまたは前記別のウェハ上に形成されたダイの幅および高さよりもそれぞれ短い幅および高さを有する、請求項3に記載のシステム。
- 前記コンピュータシステムが、前記潜在的な対象欠陥位置のうち1または複数にわたるようにミクロケアエリアを生成するように更に構成される、請求項3に記載のシステム。
- 前記コンピュータシステムが、前記対象パターンに関するテンプレート画像と前記既知の対象欠陥を検出するために用いられる前記画像とを相関付けることによってケアエリアの位置を決定するように更に構成される、請求項3に記載のシステム。
- 前記コンピュータシステムが、前記ターゲットの1または複数の特性を選択し、前記1または複数の検出パラメータを選択し、前記ターゲット候補内で前記既知の対象欠陥以外の欠陥が検出されないようにケアエリアの1または複数のパラメータを決定するように更に構成される、請求項3に記載のシステム。
- 前記検査サブシステムが、前記ウェハまたは前記別のウェハに関する他の画像を取得するように更に構成され、前記コンピュータシステムが、前記他の画像を用いて前記ウェハまたは前記別のウェハ上の他の欠陥を検出するように更に構成される、請求項3に記載のシステム。
- 前記1または複数の検出パラメータが適用される前記画像は参照画像および試験画像を用いて生成された画像を含み、前記参照画像は前記対象パターンに関するテンプレートである、請求項3に記載のシステム。
- 前記コンピュータシステムが、前記潜在的な対象欠陥位置を正確に特定するために、欠陥検出モジュールに前記ターゲットに関する前記情報を提供することにより前記既知の対象欠陥を検出するように更に構成される、請求項3に記載のシステム。
- 前記コンピュータシステムが、セットアップ中に取得されるテンプレートと前記コンピュータシステムによる前記既知の対象欠陥の検出中に取得される前記ターゲット候補の前記画像とを相関付けることによって、前記ターゲット候補の前記画像における前記潜在的な対象欠陥位置を特定することによって、前記既知の対象欠陥を検出するように更に構成される、請求項3に記載のシステム。
- 前記コンピュータシステムが、前記ターゲットに関する前記情報に基づいて前記1または複数の検出パラメータを決定するように更に構成される、請求項3に記載のシステム。
- 前記コンピュータシステムが、前記ターゲット候補の各種類に関する画像にそれぞれ基づいて前記ターゲット候補の各種類について個別に前記1または複数の検出パラメータを決定するように更に構成される、請求項3に記載のシステム。
- 前記1または複数の検出パラメータを適用することは、前記潜在的な対象欠陥位置の前記画像および参照画像を用いて差分画像を生成することと、前記差分画像内の信号に閾値を当てはめることとを備える、請求項3に記載のシステム。
- 前記コンピュータシステムが、前記潜在的な対象欠陥位置付近の差分画像の1または複数の特性を決定するように更に構成され、前記1または複数の検出パラメータを適用することは、前記差分画像の前記1または複数の特性の1または複数の値に閾値を当てはめることを備える、請求項3に記載のシステム。
- 前記1または複数の検出パラメータが適用される前記潜在的な対象欠陥位置の前記画像は、前記潜在的な対象欠陥位置を取り巻くケアエリアの画像であり、前記ケアエリアは、前記対象パターンの前記位置に対して一意的であり既知である位置にある前記既知の対象欠陥のサイズに基づいて決定される、請求項3に記載のシステム。
- 前記既知の対象欠陥が前記ウェハ上の特定パターンにおいて繰り返し発生する欠陥である、請求項3に記載のシステム。
- 前記既知の対象欠陥が組織的欠陥である、請求項3に記載のシステム。
- 前記検査サブシステムが電子ビーム検査サブシステムとしてさらに構成される、請求項3に記載のシステム。
- 前記検査サブシステムが画像化検出器を含み、前記画像化検出器が、前記ウェハから反射した光を検出し、かつ該検出器が検出した前記反射光に応じて画像を生成するように構成されている、請求項3に記載のシステム。
- 前記検査サブシステムが明視野検査サブシステムとしてさらに構成される、請求項3に記載のシステム。
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US13/652,377 US9189844B2 (en) | 2012-10-15 | 2012-10-15 | Detecting defects on a wafer using defect-specific information |
US13/652,377 | 2012-10-15 |
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JP2018136701A Active JP6671426B2 (ja) | 2012-10-15 | 2018-07-20 | 欠陥特定情報を用いるウェハ上の欠陥の検出 |
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KR (2) | KR102233050B1 (ja) |
CN (2) | CN104854677B (ja) |
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US20140105482A1 (en) | 2014-04-17 |
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US9189844B2 (en) | 2015-11-17 |
US20160071256A1 (en) | 2016-03-10 |
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TWI600897B (zh) | 2017-10-01 |
EP2907157B1 (en) | 2019-10-02 |
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