JP6580349B2 - 半導体装置および電子機器 - Google Patents

半導体装置および電子機器 Download PDF

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Publication number
JP6580349B2
JP6580349B2 JP2015044184A JP2015044184A JP6580349B2 JP 6580349 B2 JP6580349 B2 JP 6580349B2 JP 2015044184 A JP2015044184 A JP 2015044184A JP 2015044184 A JP2015044184 A JP 2015044184A JP 6580349 B2 JP6580349 B2 JP 6580349B2
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Prior art keywords
transistor
circuit
potential
node
oxide semiconductor
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Expired - Fee Related
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JP2015044184A
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Japanese (ja)
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JP2015181081A (ja
JP2015181081A5 (enExample
Inventor
池田　隆之
隆之 池田
黒川　義元
義元 黒川
宗広 上妻
宗広 上妻
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2015181081A5 publication Critical patent/JP2015181081A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
JP2015044184A 2014-03-07 2015-03-06 半導体装置および電子機器 Expired - Fee Related JP6580349B2 (ja)

Priority Applications (1)

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JP2015044184A JP6580349B2 (ja) 2014-03-07 2015-03-06 半導体装置および電子機器

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JP2014045282 2014-03-07
JP2014045282 2014-03-07
JP2015044184A JP6580349B2 (ja) 2014-03-07 2015-03-06 半導体装置および電子機器

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JP2019155425A Division JP6736740B2 (ja) 2014-03-07 2019-08-28 半導体装置

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JP2015181081A JP2015181081A (ja) 2015-10-15
JP2015181081A5 JP2015181081A5 (enExample) 2018-04-19
JP6580349B2 true JP6580349B2 (ja) 2019-09-25

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JP2019155425A Active JP6736740B2 (ja) 2014-03-07 2019-08-28 半導体装置
JP2020121117A Withdrawn JP2020184643A (ja) 2014-03-07 2020-07-15 半導体装置

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JP2020121117A Withdrawn JP2020184643A (ja) 2014-03-07 2020-07-15 半導体装置

Country Status (4)

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US (2) US9349454B2 (enExample)
JP (3) JP6580349B2 (enExample)
KR (1) KR102267237B1 (enExample)
TW (1) TWI659606B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102267237B1 (ko) * 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9887212B2 (en) * 2014-03-14 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2017068490A1 (en) * 2015-10-23 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10334196B2 (en) * 2016-01-25 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10490142B2 (en) * 2016-01-29 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
US10305460B2 (en) 2016-02-23 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Data comparison circuit and semiconductor device
JP6906978B2 (ja) 2016-02-25 2021-07-21 株式会社半導体エネルギー研究所 半導体装置、半導体ウェハ、および電子機器
US10223194B2 (en) * 2016-11-04 2019-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage device, semiconductor device, electronic device, and server system
KR102469151B1 (ko) * 2017-06-26 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기
CN111316423B (zh) * 2017-11-24 2025-02-14 株式会社半导体能源研究所 半导体装置及动态逻辑电路
US11222259B2 (en) * 2017-12-13 2022-01-11 International Business Machines Corporation Counter based resistive processing unit for programmable and reconfigurable artificial-neural-networks
WO2020075001A1 (ja) 2018-10-11 2020-04-16 株式会社半導体エネルギー研究所 測定装置
WO2020079539A1 (ja) 2018-10-18 2020-04-23 株式会社半導体エネルギー研究所 半導体装置
US12101067B2 (en) 2019-06-07 2024-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12095440B2 (en) 2019-10-17 2024-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP7386121B2 (ja) * 2020-04-09 2023-11-24 株式会社日立製作所 半導体装置
US11133063B1 (en) * 2020-06-22 2021-09-28 International Business Machines Corporation Suppressing undesired programming at half-selected devices in a crosspoint array of 3-terminal resistive memory

Family Cites Families (199)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142610A (ja) 1983-12-28 1985-07-27 Fujitsu Ltd コンパレ−タ回路
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
US5844842A (en) 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
US5254928A (en) 1991-10-01 1993-10-19 Apple Computer, Inc. Power management system for battery powered computers
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3307453B2 (ja) 1993-03-18 2002-07-24 ソニー株式会社 昇圧回路
US5510748A (en) * 1994-01-18 1996-04-23 Vivid Semiconductor, Inc. Integrated circuit having different power supplies for increased output voltage range while retaining small device geometries
JP3292417B2 (ja) 1994-02-15 2002-06-17 三菱電機株式会社 半導体装置
US7102422B1 (en) 1994-04-20 2006-09-05 Nippon Steel Corporation Semiconductor booster circuit having cascaded MOS transistors
US5497119A (en) 1994-06-01 1996-03-05 Intel Corporation High precision voltage regulation circuit for programming multilevel flash memory
JP2718375B2 (ja) 1994-09-30 1998-02-25 日本電気株式会社 チャージポンプ回路
KR0149215B1 (ko) * 1994-11-11 1998-10-15 배순훈 픽셀 구동 회로
US5493255A (en) 1995-03-21 1996-02-20 Nokia Mobile Phones Ltd. Bias control circuit for an RF power amplifier
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JPH0974347A (ja) 1995-06-26 1997-03-18 Mitsubishi Electric Corp Ｍｏｓ集積回路
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JPH09162713A (ja) 1995-12-11 1997-06-20 Mitsubishi Electric Corp 半導体集積回路
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP3394133B2 (ja) 1996-06-12 2003-04-07 沖電気工業株式会社 昇圧回路
DE19627197C1 (de) 1996-07-05 1998-03-26 Siemens Ag Vorrichtung zur Spannungsvervielfachung mit geringer Abhängigkeit der Ausgangsspannung von der Versorgungsspannung
JP3385960B2 (ja) 1998-03-16 2003-03-10 日本電気株式会社 負電圧チャージポンプ回路
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
IT1301936B1 (it) 1998-08-27 2000-07-07 St Microelectronics Srl Circuito a pompa di carica per dispositivi integrati di memoria
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP3403097B2 (ja) 1998-11-24 2003-05-06 株式会社東芝 Ｄ／ａ変換回路および液晶表示装置
US6049246A (en) 1998-12-11 2000-04-11 Vivid Semiconductor, Inc. Amplifier offset cancellation using current copier
JP3713401B2 (ja) 1999-03-18 2005-11-09 株式会社東芝 チャージポンプ回路
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
US6888526B2 (en) 1999-10-21 2005-05-03 Seiko Epson Corporation Voltage supplying device, and semiconductor device, electro-optical device and electronic instrument using the same
JP4579377B2 (ja) 2000-06-28 2010-11-10 ルネサスエレクトロニクス株式会社 多階調デジタル映像データを表示するための駆動回路及びその方法
US6664846B1 (en) 2000-08-30 2003-12-16 Altera Corporation Cross coupled N-channel negative pump
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
US20020084808A1 (en) * 2000-12-28 2002-07-04 Intel Corporation Low charge-dump transistor switch
KR100364428B1 (ko) 2000-12-30 2002-12-11 주식회사 하이닉스반도체 고전압 레귤레이션 회로
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP2002319863A (ja) 2001-04-20 2002-10-31 Canon Inc Ａｄ変換器
JP3960513B2 (ja) 2001-08-01 2007-08-15 シャープ株式会社 半導体チャージポンプ回路および不揮発性半導体記憶装置
US6696869B1 (en) 2001-08-07 2004-02-24 Globespanvirata, Inc. Buffer circuit for a high-bandwidth analog to digital converter
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
US6720822B2 (en) 2001-10-31 2004-04-13 Stmicroelectronics S.R.L. Negative charge pump architecture with self-generated boosted phases
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP3709846B2 (ja) 2002-01-18 2005-10-26 ソニー株式会社 並列型ａｄ変換器
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US20030184360A1 (en) 2002-03-29 2003-10-02 Yi-Ti Wang Charge pump for flash memory with serially connected capacitors for preventing breakdown
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
KR100465068B1 (ko) 2002-06-29 2005-01-06 주식회사 하이닉스반도체 펌핑 회로
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US6914791B1 (en) 2002-11-06 2005-07-05 Halo Lsi, Inc. High efficiency triple well charge pump circuit
JP2004233742A (ja) 2003-01-31 2004-08-19 Renesas Technology Corp 表示駆動制御装置および表示装置を備えた電子機器
JP2004233743A (ja) 2003-01-31 2004-08-19 Renesas Technology Corp 表示駆動制御装置および表示装置を備えた電子機器
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP2006526306A (ja) * 2003-05-27 2006-11-16 ジョージア テック リサーチ コーポレイション フローティングゲート基準回路
US6794916B1 (en) 2003-05-30 2004-09-21 International Business Machines Corporation Double edge-triggered flip-flops
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
JP2005026805A (ja) 2003-06-30 2005-01-27 Renesas Technology Corp 半導体集積回路
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
KR101019337B1 (ko) 2004-03-12 2011-03-07 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
JP2005339658A (ja) 2004-05-26 2005-12-08 Toshiba Corp 昇圧回路
US7187595B2 (en) * 2004-06-08 2007-03-06 Saifun Semiconductors Ltd. Replenishment for internal voltage
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7116572B2 (en) * 2004-11-09 2006-10-03 Ramtron International Corporation Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memory
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
CN101057338B (zh) 2004-11-10 2011-03-16 佳能株式会社 采用无定形氧化物的场效应晶体管
CN101057333B (zh) 2004-11-10 2011-11-16 佳能株式会社 发光器件
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006319393A (ja) 2005-05-10 2006-11-24 Renesas Technology Corp 通信用半導体集積回路および無線通信装置
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
US7538673B2 (en) 2005-08-26 2009-05-26 Texas Instruments Incorporated Voltage regulation circuit for RFID systems
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP2007096036A (ja) 2005-09-29 2007-04-12 Matsushita Electric Ind Co Ltd 昇圧回路
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101358954B1 (ko) 2005-11-15 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
JP5057430B2 (ja) 2006-12-18 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路とその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US7777557B2 (en) 2007-01-17 2010-08-17 Panasonic Corporation Booster circuit
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
EP2120189B1 (en) 2007-01-30 2013-01-16 Panasonic Corporation Nonvolatile storage device, nonvolatile storage system, and access device
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
WO2008133345A1 (en) 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8068367B2 (en) * 2007-06-15 2011-11-29 Micron Technology, Inc. Reference current sources
TW200919324A (en) 2007-10-18 2009-05-01 G Time Electronic Co Ltd RFID system capable of detecting RFID tag orientation, an RFID tag thereof, and a puzzle system using the RFID system
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
US8294380B2 (en) 2008-03-26 2012-10-23 Semiconductor Components Industries, Llc Method of forming a flash controller for a camera and structure therefor
JP5200761B2 (ja) 2008-08-22 2013-06-05 ソニー株式会社 昇圧回路、固体撮像素子およびカメラシステム
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP5251541B2 (ja) 2009-01-26 2013-07-31 富士通セミコンダクター株式会社 定電圧発生回路およびレギュレータ回路
US8004907B2 (en) 2009-06-05 2011-08-23 Freescale Semiconductor, Inc. SRAM with read and write assist
KR101577829B1 (ko) 2009-07-15 2015-12-15 엘지디스플레이 주식회사 액정표시장치
JP5467845B2 (ja) 2009-09-29 2014-04-09 セイコーインスツル株式会社 ボルテージレギュレータ
WO2011049230A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
KR101752518B1 (ko) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101708607B1 (ko) 2009-11-20 2017-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011065258A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011068106A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
KR101998737B1 (ko) 2009-12-18 2019-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
KR101780748B1 (ko) 2010-02-19 2017-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복조회로 및 복조회로를 이용한 ｒｆｉｄ 태그
KR101817926B1 (ko) 2010-03-02 2018-01-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 승압 회로 및 승압 회로를 포함하는 ｒｆｉｄ 태그
WO2011108374A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8598945B2 (en) 2010-06-21 2013-12-03 Rf Micro Devices, Inc. High voltage charge-pump with a feedback control loop
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
JP5674594B2 (ja) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
KR20120086953A (ko) 2011-01-27 2012-08-06 에스케이하이닉스 주식회사 내부전압생성회로 및 반도체메모리장치
TWI525619B (zh) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 記憶體電路
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 ｌｓｉ
TWI521612B (zh) 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5883699B2 (ja) * 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 プログラマブルｌｓｉ
US9935622B2 (en) 2011-04-28 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Comparator and semiconductor device including comparator
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
US8669781B2 (en) * 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5890251B2 (ja) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 通信方法
JP5867065B2 (ja) 2011-12-22 2016-02-24 株式会社ソシオネクスト 降圧型電源回路
JP2013168926A (ja) * 2012-01-18 2013-08-29 Semiconductor Energy Lab Co Ltd 回路、センサ回路及びセンサ回路を用いた半導体装置
JP6125850B2 (ja) * 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US8995218B2 (en) * 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5975907B2 (ja) * 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
JP6228381B2 (ja) * 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
JP6227890B2 (ja) * 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 信号処理回路および制御回路
DE102013207324A1 (de) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
US20130307496A1 (en) 2012-05-18 2013-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
CN103488267A (zh) * 2012-06-12 2014-01-01 鸿富锦精密工业(武汉)有限公司 电源控制电路
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8847662B2 (en) * 2012-09-11 2014-09-30 Mediatek Inc. Mixer and associated signal circuit
TWI637517B (zh) * 2012-10-24 2018-10-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9245650B2 (en) 2013-03-15 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9378844B2 (en) * 2013-07-31 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor whose gate is electrically connected to capacitor
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
US9385592B2 (en) 2013-08-21 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Charge pump circuit and semiconductor device including the same
KR102267237B1 (ko) * 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9595955B2 (en) * 2014-08-08 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including power storage elements and switches
JP2016111677A (ja) * 2014-09-26 2016-06-20 株式会社半導体エネルギー研究所 半導体装置、無線センサ、及び電子機器

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US10002656B2 (en) 2018-06-19
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TWI659606B (zh) 2019-05-11
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