JP6443267B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6443267B2
JP6443267B2 JP2015169396A JP2015169396A JP6443267B2 JP 6443267 B2 JP6443267 B2 JP 6443267B2 JP 2015169396 A JP2015169396 A JP 2015169396A JP 2015169396 A JP2015169396 A JP 2015169396A JP 6443267 B2 JP6443267 B2 JP 6443267B2
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Japan
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layer
region
collector
igbt
collector layer
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JP2015169396A
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Japanese (ja)
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JP2017045949A (ja
JP2017045949A5 (enExample
Inventor
河野　憲司
憲司 河野
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Denso Corp
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Denso Corp
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Priority to JP2015169396A priority Critical patent/JP6443267B2/ja
Priority to PCT/JP2016/073244 priority patent/WO2017038389A1/ja
Priority to CN201680049102.XA priority patent/CN107924942B/zh
Priority to US15/740,573 priority patent/US10170607B2/en
Publication of JP2017045949A publication Critical patent/JP2017045949A/ja
Publication of JP2017045949A5 publication Critical patent/JP2017045949A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2015169396A 2015-08-28 2015-08-28 半導体装置 Active JP6443267B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015169396A JP6443267B2 (ja) 2015-08-28 2015-08-28 半導体装置
PCT/JP2016/073244 WO2017038389A1 (ja) 2015-08-28 2016-08-08 半導体装置
CN201680049102.XA CN107924942B (zh) 2015-08-28 2016-08-08 半导体装置
US15/740,573 US10170607B2 (en) 2015-08-28 2016-08-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015169396A JP6443267B2 (ja) 2015-08-28 2015-08-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2017045949A JP2017045949A (ja) 2017-03-02
JP2017045949A5 JP2017045949A5 (enExample) 2017-09-14
JP6443267B2 true JP6443267B2 (ja) 2018-12-26

Family

ID=58188735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015169396A Active JP6443267B2 (ja) 2015-08-28 2015-08-28 半導体装置

Country Status (4)

Country Link
US (1) US10170607B2 (enExample)
JP (1) JP6443267B2 (enExample)
CN (1) CN107924942B (enExample)
WO (1) WO2017038389A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6589817B2 (ja) * 2016-10-26 2019-10-16 株式会社デンソー 半導体装置
CN110382296B (zh) 2017-03-10 2022-12-13 株式会社小糸制作所 照明装置
JP7013668B2 (ja) * 2017-04-06 2022-02-01 富士電機株式会社 半導体装置
WO2019013286A1 (ja) * 2017-07-14 2019-01-17 富士電機株式会社 半導体装置
US10141300B1 (en) * 2017-10-19 2018-11-27 Alpha And Omega Semiconductor (Cayman) Ltd. Low capacitance transient voltage suppressor
JP6733829B2 (ja) 2017-11-15 2020-08-05 富士電機株式会社 半導体装置
WO2019098271A1 (ja) 2017-11-16 2019-05-23 富士電機株式会社 半導体装置
JP6992476B2 (ja) * 2017-12-14 2022-01-13 富士電機株式会社 半導体装置
CN109979935B (zh) * 2017-12-28 2025-04-22 富士电机株式会社 半导体装置及半导体装置的制造方法
JP7187787B2 (ja) 2018-03-15 2022-12-13 富士電機株式会社 半導体装置
JP7102808B2 (ja) 2018-03-15 2022-07-20 富士電機株式会社 半導体装置
JP7131003B2 (ja) 2018-03-16 2022-09-06 富士電機株式会社 半導体装置
JP7010184B2 (ja) * 2018-09-13 2022-01-26 株式会社デンソー 半導体装置
JP7230434B2 (ja) 2018-10-30 2023-03-01 富士電機株式会社 半導体装置の製造方法
DE112019003399T5 (de) 2019-02-27 2021-03-18 Fuji Electric Co., Ltd. Halbleitervorrichtung
JP7404702B2 (ja) * 2019-08-09 2023-12-26 富士電機株式会社 半導体装置
JP7172920B2 (ja) 2019-09-04 2022-11-16 株式会社デンソー 半導体装置
CN110797404B (zh) * 2019-10-18 2023-11-28 上海睿驱微电子科技有限公司 一种rc-igbt半导体器件
DE112020003167B4 (de) * 2020-02-12 2025-06-05 Fuji Electric Co., Ltd. Halbleitervorrichtung und deren herstellungsverfahren
JP7524589B2 (ja) * 2020-04-20 2024-07-30 サンケン電気株式会社 半導体装置
DE112021000122T5 (de) 2020-05-01 2022-07-21 Fuji Electric Co., Ltd. Halbleitervorrichtung
JP7410829B2 (ja) 2020-09-15 2024-01-10 株式会社東芝 半導体装置
JP7528743B2 (ja) * 2020-11-27 2024-08-06 三菱電機株式会社 半導体装置
JP7410900B2 (ja) * 2021-03-17 2024-01-10 株式会社東芝 半導体装置
DE102021115971A1 (de) * 2021-06-21 2022-12-22 Infineon Technologies Ag Feldstoppgebiet enthaltende halbleitervorrichtung
CN113990927B (zh) * 2021-10-26 2023-11-28 电子科技大学 一种减小米勒电容的新型rc-igbt结构

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JPH0266977A (ja) 1988-09-01 1990-03-07 Fuji Electric Co Ltd 半導体ダイオード
US6204717B1 (en) 1995-05-22 2001-03-20 Hitachi, Ltd. Semiconductor circuit and semiconductor device for use in equipment such as a power converting apparatus
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JP2008192737A (ja) * 2007-02-02 2008-08-21 Denso Corp 半導体装置
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JP4957840B2 (ja) 2010-02-05 2012-06-20 株式会社デンソー 絶縁ゲート型半導体装置
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JP5190485B2 (ja) * 2010-04-02 2013-04-24 株式会社豊田中央研究所 半導体装置
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JP5737102B2 (ja) * 2011-09-19 2015-06-17 株式会社デンソー 半導体装置
JP2014103376A (ja) * 2012-09-24 2014-06-05 Toshiba Corp 半導体装置
DE112013007576B4 (de) 2013-11-05 2022-02-03 Denso Corporation Halbleitereinrichtung
JP6119593B2 (ja) * 2013-12-17 2017-04-26 トヨタ自動車株式会社 半導体装置
JP2015154000A (ja) * 2014-02-18 2015-08-24 トヨタ自動車株式会社 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JP2017045949A (ja) 2017-03-02
CN107924942B (zh) 2021-04-20
US20180197977A1 (en) 2018-07-12
US10170607B2 (en) 2019-01-01
WO2017038389A1 (ja) 2017-03-09
CN107924942A (zh) 2018-04-17

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