JP7230434B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Description
図1は、実施の形態にかかる半導体装置の製造方法における半導体ウェハのおもて面を示す平面図である。図2Aは、実施の形態1にかかる半導体装置の製造方法における半導体ウェハの裏面を示す平面図である。図2Bは、実施の形態1にかかる半導体装置の製造方法における裏面PCMの平面図である。
本実施の形態2における半導体チップ22は裏面側にn+型カソード領域17、p型ダミー領域20を備えるダイオードである。図10は、実施の形態2にかかる半導体装置の断面図である。
図11は、実施の形態3にかかる半導体装置の断面図である。実施の形態3の半導体チップは、裏面側に逆耐圧構造領域を備えるRB-MOSFET(Reverse Blocking-Metal Oxide Semiconductor Field Effect Transistor)である。通常のMOSFETは裏面の裏面電極7からおもて面のおもて面電極10にn-型ドリフト層2とp型ベース領域3の順バイアス接合、また、n型反転チャネルを通じて電流が流れるが、RB-MOSFETはn-型ドリフト層2と裏面電極7のショットキー接合により、この裏面電極7からおもて面電極10への電流の流れを阻止する機能を有する。更に裏面外周の逆耐圧構造領域61によりチップ端部に電界がかからないようにすることで端部に発生する電荷による漏れ電流の増大を防ぐことにより、逆耐圧を保持するものである。
2 n-型ドリフト層
3 p型ベース領域
4 n+型エミッタ領域
5 p+型コンタクト領域
6 ゲート絶縁膜
7 裏面電極
8 ゲート電極
9 層間絶縁膜
10 おもて面電極
11 トレンチ
12 IGBT領域
13 FWD領域
16 p+型コレクタ領域
17 n+型カソード領域
18 浮遊p型領域
19 アノード領域
20 p型ダミー領域
21,121 半導体ウェハ
22,122 半導体チップ
23,123 PCM
24 裏面PCM(第1のPCM)
25 コレクタ領域評価部
26 カソード領域評価部
27 浮遊p型領域評価部
28 FS領域評価部
29 IGBT裏面構造評価部
30 ダイオード裏面構造第1評価部
31 ダイオード裏面構造第2評価部
32 バックグランド評価部
54 n+型ソース領域
59 リサーフ領域
60 ガードリング領域
61 逆耐圧構造領域
70 活性領域部
71 終端領域
Claims (8)
- 半導体ウェハ上に多数の半導体チップを形成する半導体装置の製造方法において、
前記半導体ウェハの一方の主面に、前記半導体チップの中に活性領域を形成する第1工程と、
前記半導体ウェハの他方の主面に、第1のPCM(Process Control Monitor)を形成する第2工程と、
を含み、
前記第2工程より前に、
前記半導体ウェハの一方の主面側に、第2のPCMを形成する第3工程を含み、
前記第1のPCMと前記第2のPCMは、それぞれ前記半導体ウェハの同一位置の他方の主面と一方の主面に形成されることを特徴とする半導体装置の製造方法。 - 前記第1のPCMはイオンが注入された評価部を含み、
前記第2工程では、同時に、前記半導体チップの前記他方の主面にイオン注入を行うことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記第1のPCMは、前記他方の主面に行うイオン注入のうち1つのみが注入されている前記評価部を含むことを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記第1のPCMは、前記半導体装置の裏面構造と同じイオン注入の組合せの評価部を含むことを特徴とする請求項2または3に記載の半導体装置の製造方法。
- 前記第1のPCMは、位置識別用のマーカを有することを特徴とする請求項1~4のいずれか一つに記載の半導体装置の製造方法。
- 前記半導体ウェハの中央部に形成された前記第1のPCMと、前記半導体ウェハの端部に形成された前記第1のPCMとでは、前記マーカが異なることを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記半導体チップには、前記一方の主面に成膜された第1の負荷電極と、前記他方の主面に成膜された第2の負荷電極が形成され、前記第1の負荷電極と前記第2の負荷電極の間に電流を通じることを特徴とする請求項1~6のいずれか一つに記載の半導体装置の製造方法。
- 前記半導体チップには、前記一方の主面に、更に前記第1の負荷電極と前記第2の負荷電極の間に流れる電流を制御する制御電極が形成されることを特徴とする請求項7に記載の半導体装置の製造方法。
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