CN107924942B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN107924942B
CN107924942B CN201680049102.XA CN201680049102A CN107924942B CN 107924942 B CN107924942 B CN 107924942B CN 201680049102 A CN201680049102 A CN 201680049102A CN 107924942 B CN107924942 B CN 107924942B
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layer
region
igbt
diode
collector
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Chinese (zh)
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CN107924942A (zh
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河野宪司
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201680049102.XA 2015-08-28 2016-08-08 半导体装置 Active CN107924942B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015169396A JP6443267B2 (ja) 2015-08-28 2015-08-28 半導体装置
JP2015-169396 2015-08-28
PCT/JP2016/073244 WO2017038389A1 (ja) 2015-08-28 2016-08-08 半導体装置

Publications (2)

Publication Number Publication Date
CN107924942A CN107924942A (zh) 2018-04-17
CN107924942B true CN107924942B (zh) 2021-04-20

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CN201680049102.XA Active CN107924942B (zh) 2015-08-28 2016-08-08 半导体装置

Country Status (4)

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US (1) US10170607B2 (enExample)
JP (1) JP6443267B2 (enExample)
CN (1) CN107924942B (enExample)
WO (1) WO2017038389A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6589817B2 (ja) * 2016-10-26 2019-10-16 株式会社デンソー 半導体装置
EP3594058A4 (en) 2017-03-10 2020-12-30 Koito Manufacturing Co., Ltd. LIGHTING DEVICE
JP7013668B2 (ja) * 2017-04-06 2022-02-01 富士電機株式会社 半導体装置
CN110140199B (zh) * 2017-07-14 2022-07-05 富士电机株式会社 半导体装置
US10141300B1 (en) 2017-10-19 2018-11-27 Alpha And Omega Semiconductor (Cayman) Ltd. Low capacitance transient voltage suppressor
DE112018001627B4 (de) 2017-11-15 2024-07-11 Fuji Electric Co., Ltd. Halbleitervorrichtung
WO2019098271A1 (ja) 2017-11-16 2019-05-23 富士電機株式会社 半導体装置
JP6992476B2 (ja) * 2017-12-14 2022-01-13 富士電機株式会社 半導体装置
US11393812B2 (en) * 2017-12-28 2022-07-19 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP7187787B2 (ja) 2018-03-15 2022-12-13 富士電機株式会社 半導体装置
JP7102808B2 (ja) 2018-03-15 2022-07-20 富士電機株式会社 半導体装置
JP7131003B2 (ja) 2018-03-16 2022-09-06 富士電機株式会社 半導体装置
JP7010184B2 (ja) * 2018-09-13 2022-01-26 株式会社デンソー 半導体装置
JP7230434B2 (ja) 2018-10-30 2023-03-01 富士電機株式会社 半導体装置の製造方法
DE112019003399B4 (de) 2019-02-27 2026-01-29 Fuji Electric Co., Ltd. Halbleitervorrichtung
JP7404702B2 (ja) * 2019-08-09 2023-12-26 富士電機株式会社 半導体装置
JP7172920B2 (ja) 2019-09-04 2022-11-16 株式会社デンソー 半導体装置
CN110797404B (zh) * 2019-10-18 2023-11-28 上海睿驱微电子科技有限公司 一种rc-igbt半导体器件
JP7364027B2 (ja) * 2020-02-12 2023-10-18 富士電機株式会社 半導体装置およびその製造方法
JP7524589B2 (ja) * 2020-04-20 2024-07-30 サンケン電気株式会社 半導体装置
JP7447995B2 (ja) 2020-05-01 2024-03-12 富士電機株式会社 半導体装置
JP7410829B2 (ja) 2020-09-15 2024-01-10 株式会社東芝 半導体装置
JP7528743B2 (ja) * 2020-11-27 2024-08-06 三菱電機株式会社 半導体装置
JP7410900B2 (ja) * 2021-03-17 2024-01-10 株式会社東芝 半導体装置
DE102021115971A1 (de) * 2021-06-21 2022-12-22 Infineon Technologies Ag Feldstoppgebiet enthaltende halbleitervorrichtung
CN113990927B (zh) * 2021-10-26 2023-11-28 电子科技大学 一种减小米勒电容的新型rc-igbt结构
WO2026009816A1 (ja) * 2024-07-02 2026-01-08 富士電機株式会社 半導体装置および半導体モジュール

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101000911A (zh) * 2006-01-10 2007-07-18 株式会社电装 具有igbt和二极管的半导体器件
CN101764139A (zh) * 2008-12-24 2010-06-30 株式会社电装 包括绝缘栅极双极晶体管和二极管的半导体器件
CN102412288A (zh) * 2010-09-21 2012-04-11 株式会社东芝 逆导型绝缘栅双极晶体管

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2050694B (en) 1979-05-07 1983-09-28 Nippon Telegraph & Telephone Electrode structure for a semiconductor device
US4969028A (en) 1980-12-02 1990-11-06 General Electric Company Gate enhanced rectifier
JPH0266977A (ja) 1988-09-01 1990-03-07 Fuji Electric Co Ltd 半導体ダイオード
US6204717B1 (en) 1995-05-22 2001-03-20 Hitachi, Ltd. Semiconductor circuit and semiconductor device for use in equipment such as a power converting apparatus
JP2001196606A (ja) 2000-01-11 2001-07-19 Mitsubishi Electric Corp ダイオード
JP2007184486A (ja) * 2006-01-10 2007-07-19 Denso Corp 半導体装置
JP2008192737A (ja) * 2007-02-02 2008-08-21 Denso Corp 半導体装置
JP4957840B2 (ja) 2010-02-05 2012-06-20 株式会社デンソー 絶縁ゲート型半導体装置
JP5190485B2 (ja) * 2010-04-02 2013-04-24 株式会社豊田中央研究所 半導体装置
DE112010005443B4 (de) * 2010-04-02 2019-03-14 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung mit einem Halbleitersubstrat mit einem Diodenbereich und einem IGBT-Bereich sowie Verfahren zu dessen Herstellung
US8564097B2 (en) * 2010-04-15 2013-10-22 Sinopower Semiconductor, Inc. Reverse conducting IGBT
JP5321669B2 (ja) 2010-11-25 2013-10-23 株式会社デンソー 半導体装置
JP5737102B2 (ja) * 2011-09-19 2015-06-17 株式会社デンソー 半導体装置
JP2014103376A (ja) * 2012-09-24 2014-06-05 Toshiba Corp 半導体装置
CN105706238B (zh) * 2013-11-05 2019-03-12 丰田自动车株式会社 半导体装置
JP6119593B2 (ja) * 2013-12-17 2017-04-26 トヨタ自動車株式会社 半導体装置
JP2015154000A (ja) * 2014-02-18 2015-08-24 トヨタ自動車株式会社 半導体装置および半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101000911A (zh) * 2006-01-10 2007-07-18 株式会社电装 具有igbt和二极管的半导体器件
CN101764139A (zh) * 2008-12-24 2010-06-30 株式会社电装 包括绝缘栅极双极晶体管和二极管的半导体器件
CN102412288A (zh) * 2010-09-21 2012-04-11 株式会社东芝 逆导型绝缘栅双极晶体管

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Publication number Publication date
JP2017045949A (ja) 2017-03-02
WO2017038389A1 (ja) 2017-03-09
CN107924942A (zh) 2018-04-17
US10170607B2 (en) 2019-01-01
JP6443267B2 (ja) 2018-12-26
US20180197977A1 (en) 2018-07-12

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