JP6412902B2 - プラズマシステム - Google Patents
プラズマシステム Download PDFInfo
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- JP6412902B2 JP6412902B2 JP2016157072A JP2016157072A JP6412902B2 JP 6412902 B2 JP6412902 B2 JP 6412902B2 JP 2016157072 A JP2016157072 A JP 2016157072A JP 2016157072 A JP2016157072 A JP 2016157072A JP 6412902 B2 JP6412902 B2 JP 6412902B2
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/12—Actuating devices; Operating means; Releasing devices actuated by fluid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Description
本発明は以下の形態としても実現できる。
[形態1]
プラズマ源であって、
リングプラズマチャンバと、
前記リングプラズマチャンバの外側に巻かれた一次巻線と、
複数のフェライトであって、前記リングプラズマチャンバが前記複数のフェライトの各々を貫通している、複数のフェライトと、
前記プラズマチャンバを処理チャンバに結合し、それぞれのプラズマ制限部を有する複数のプラズマチャンバ流出口と、を備える、プラズマ源。
[形態2]
形態1に記載のプラズマ源であって、
前記プラズマ制限部は、約0.1mmから約2.0mmの間の直径を有する、プラズマ源。
[形態3]
形態1に記載のプラズマ源であって、
前記プラズマ制限部は、プラズマシース厚さの2倍以下の直径を有する、プラズマ源。
[形態4]
形態1に記載のプラズマ源であって、
前記プラズマ制限部は、前記プラズマチャンバと前記処理チャンバとの間に約1.5対1よりも大きい圧力差を提供するのに十分な直径を有する、プラズマ源。
[形態5]
形態1に記載のプラズマ源であって、
前記プラズマ制限部は、バイアス電源に接続されている、プラズマ源。
[形態6]
形態1に記載のプラズマ源であって、さらに、
処理ガス源を前記プラズマチャンバに結合する少なくとも1つの処理ガス流入口を備える、プラズマ源。
[形態7]
形態6に記載のプラズマ源であって、さらに、
前記少なくとも1つの処理ガス流入口に結合された処理ガス流量制御装置を備える、プラズマ源。
[形態8]
形態1に記載のプラズマ源であって、
前記フェライトは、前記リングプラズマチャンバの周囲に実質的に均等に分散されている、プラズマ源。
[形態9]
形態1に記載のプラズマ源であって、
前記フェライトは、前記リングプラズマチャンバの周囲に複数のグループに分けて配置される、プラズマ源。
[形態10]
形態1に記載のプラズマ源であって、
前記リングプラズマチャンバは、略円形、略三角形、略長方形、または、略多角形からなる一群の形状の内の1つである、プラズマ源。
[形態11]
プラズマを生成する方法であって、
処理ガスをリングプラズマチャンバ内に供給する工程と、
前記リングプラズマチャンバの外側に巻かれた一次巻線に一次電流を印加する工程と、
前記一次巻線内に磁界を生成する工程と、
複数のフェライトによって前記磁界を集中させる工程であって、前記リングプラズマチャンバが前記複数のフェライトの各々を貫通している、工程と、
前記リングプラズマチャンバ内の前記処理ガスに二次電流を誘導する工程と、
前記二次電流で前記リングプラズマチャンバ内の前記処理ガスにプラズマを生成する工程と、
前記プラズマチャンバを処理チャンバに結合する複数のプラズマチャンバ流出口の各々にあるプラズマ制限部によって、前記リングプラズマチャンバ内に前記プラズマを制限する工程と、を備える、方法。
[形態12]
形態11に記載の方法であって、さらに、
前記複数の流出口を通して前記処理チャンバに中性種およびラジカル種の少なくとも一方を供給する工程を備える、方法。
[形態13]
形態11に記載の方法であって、
前記プラズマ制限部は、約0.1mmから約2.0mmの間の直径を有する、方法。
[形態14]
形態11に記載の方法であって、
前記プラズマ制限部は、プラズマシース厚さの2倍以下の直径を有する、方法。
[形態15]
形態11に記載の方法であって、
前記プラズマ制限部は、前記プラズマチャンバと前記処理チャンバとの間に約1.5対1よりも大きい圧力差を提供するのに十分な直径を有する、方法。
[形態16]
形態11に記載の方法であって、さらに、
前記プラズマ制限部をバイアスする工程を備える、方法。
[形態17]
形態11に記載の方法であって、さらに、
前記リングプラズマチャンバ内の流量、圧力、および/または、バイアスの少なくとも1つを調節する工程を備える、方法。
[形態18]
形態11に記載の方法であって、さらに、
少なくとも1つの処理監視センサから処理フィードバック信号を受信する工程と、
流量、圧力、および/または、バイアスの内の少なくとも1つに関する少なくとも1つの設定値を調整する工程と、を備える、方法。
[形態19]
プラズマ処理システムであって、
リングプラズマチャンバと、
前記リングプラズマチャンバの外側に巻かれた一次巻線と、
複数のフェライトであって、前記リングプラズマチャンバが前記複数のフェライトの各々を貫通している、複数のフェライトと、
前記プラズマチャンバを処理チャンバに結合し、それぞれのプラズマ制限部を有する複数のプラズマチャンバ流出口と、
少なくとも1つの処理監視センサと、
コントローラと、を備え、
前記コントローラは、
処理ガスを前記リングプラズマチャンバ内に供給するためのロジックと、
前記リングプラズマチャンバの外側に巻かれた一次巻線に一次電流を印加するためのロジックと、
前記一次巻線内に磁界を生成するためのロジックと、
前記複数のフェライトによって前記磁界を集中させるためのロジックと、
前記リングプラズマチャンバ内の前記処理ガスに二次電流を誘導するためのロジックと、
前記二次電流で前記リングプラズマチャンバの前記処理ガス内にプラズマを生成するためのロジックと、
前記少なくとも1つの処理監視センサから処理フィードバック信号を受信するためのロジックと、
少なくとも1つの設定値を調整するためのロジックと、を含む、プラズマ処理システム。
[形態20]
基板を処理するためのプラズマシステムであって、
処理チャンバであって、
底部と、
複数の側壁と、
前記底部に近接する基板支持体と、
前記処理チャンバを囲むように前記側壁と結合されたチャンバ上部と、を有する、処理チャンバと、
前記基板支持体の複数の領域に分散されるように前記チャンバ上部の上に配置された複数のフェライトであって、前記領域は、前記基板支持体の外部と前記基板支持体の中心部との間に少なくとも伸びる、複数のフェライトと、
プラズマチャンバを前記処理チャンバに結合し、それぞれのプラズマ制限部を有する複数のプラズマチャンバ流出口と、を備える、プラズマシステム。
[形態21]
形態20に記載のプラズマシステムであって、さらに
前記複数のフェライトに電流を供給する電源を備え、
前記複数のフェライトは、前記基板支持体の前記領域に前記電流を集中させる、プラズマシステム。
Claims (19)
- プラズマシステムであって、
内側リングプラズマチャンバおよび1または複数の外側リングプラズマチャンバを有する複数のリングプラズマチャンバであって、前記複数のリングプラズマチャンバの各々は、処理ガスを受けるための複数のガス流入口を有する、複数のリングプラズマチャンバと、
前記複数のリングプラズマチャンバの各々の周囲に配置された複数の一次巻線と、
前記複数のリングプラズマチャンバの各々の周りに配置された複数のフェライトであって、前記複数の一次巻線の各々の各回は、前記複数のフェライトの各々の内側を貫通している、複数のフェライトと、
前記複数のリングプラズマチャンバを支持するためのチャンバ上部であって、前記チャンバ上部は、さらに、前記複数のリングプラズマチャンバを前記チャンバ上部の下に配置された処理チャンバに結合する複数のプラズマチャンバ流出口を有し、前記複数のリングプラズマチャンバの各々の前記複数のガス流入口の各々は、前記複数のプラズマチャンバ流出口のそれぞれと整列する、チャンバ上部と、
を備え、
前記複数のガス流入口の各々は、前記複数のフェライトにおいて周方向に隣り合う2つのフェライトの間に位置する、
プラズマシステム。 - 請求項1に記載のプラズマシステムであって、さらに、
前記リングプラズマチャンバの各々に結合された処理ガス源を備える、プラズマシステム。 - 請求項1に記載のプラズマシステムであって、
前記処理チャンバは、基板を支持するための基板支持体を有し、前記基板支持体は、前記複数のプラズマチャンバ流出口の下に配置されている、プラズマシステム。 - 請求項3に記載のプラズマシステムであって、
前記複数のプラズマチャンバ流出口の各々は、前記基板支持体に存在する場合、前記基板にわたって前記処理チャンバに流れの分散を提供するために円錐台形状を有する、プラズマシステム。 - 請求項1に記載のプラズマシステムであって、さらに、
前記処理チャンバと前記複数のリングプラズマチャンバの各々との間に圧力差を提供するために、前記複数のプラズマチャンバ流出口の各々に配置された複数のプラズマ制限部を備える、プラズマシステム。 - 請求項5に記載のプラズマシステムであって、さらに、
前記複数のプラズマ制限部の各々に接続されたバイアス電圧であって、前記バイアス電圧は、前記複数のプラズマチャンバ流出口からイオンを引き出して前記処理チャンバへ引き込むように構成されている、プラズマシステム。 - 請求項6に記載のプラズマシステムであって、
前記複数のフェライトの各々は正方形を有し、前記複数のリングプラズマチャンバの各々は長方形の断面形状を有する、プラズマシステム。 - 請求項1に記載のプラズマシステムであって、
前記リングプラズマチャンバの各々は、セラミック材料で作られている、プラズマシステム。 - 請求項5に記載のプラズマシステムであって、
前記複数のプラズマ制限部の各々は、約0.1mmから約2.0mmの間の直径を有する、プラズマシステム。 - 請求項3に記載のプラズマシステムであって、さらに、
前記複数の一次巻線を介して前記複数のフェライトに電流を供給するための電源を備え、前記複数のフェライトは、前記基板支持体の複数の領域に前記電流を集中させる、プラズマシステム。 - 請求項1に記載のプラズマシステムであって、
前記チャンバ上部における前記複数のプラズマチャンバ流出口の各々は、前記処理チャンバに面した側が広い円錐形状の開口部を有する、プラズマシステム。 - プラズマシステムであって、
内側リングプラズマチャンバおよび1または複数の外側リングプラズマチャンバを有する複数のリングプラズマチャンバであって、前記複数のリングプラズマチャンバの各々は、処理ガスを受けるための複数のガス流入口を有する、複数のリングプラズマチャンバと、
前記複数のリングプラズマチャンバの各々の周囲に配置された複数の一次巻線と、
前記複数のリングプラズマチャンバの各々の周りに配置された複数のフェライトであって、前記複数のリングプラズマチャンバの各々の前記複数のフェライトの隣接する各々は、部分的な重なりを有し、前記複数の一次巻線の各々の各回は、前記複数のフェライトの各々の内側を貫通している、複数のフェライトと、
前記複数のリングプラズマチャンバを支持するためのチャンバ上部であって、前記チャンバ上部は、さらに、前記複数のリングプラズマチャンバを前記チャンバ上部の下に配置された処理チャンバに結合する複数のプラズマチャンバ流出口を有し、前記複数のリングプラズマチャンバの各々の前記複数のガス流入口の各々は、前記複数のプラズマチャンバ流出口のそれぞれと整列する、チャンバ上部と、
を備える、プラズマシステム。 - 請求項12に記載のプラズマシステムであって、さらに、
前記複数のリングプラズマチャンバの各々に結合された処理ガス源を備える、プラズマシステム。 - 請求項12に記載のプラズマシステムであって、
前記複数のガス流入口の各々は、2つの隣接する前記複数のフェライトの間に位置する、プラズマシステム。 - 請求項12に記載のプラズマシステムであって、
前記処理チャンバは、基板を支持するための基板支持体を有し、前記基板支持体は、前記複数のプラズマチャンバ流出口の下に配置されている、プラズマシステム。 - 請求項15に記載のプラズマシステムであって、
前記複数のプラズマチャンバ流出口の各々は、前記基板支持体に存在する場合、前記基板にわたって前記処理チャンバに流れの分散を提供するために円錐台形状を有する、プラズマシステム。 - 請求項12に記載のプラズマシステムであって、
前記複数のフェライトの各々は略正方形を有し、前記複数のリングプラズマチャンバの各々は長方形の断面形状を有し、前記複数のリングプラズマチャンバの各々はセラミック材料で作られている、プラズマシステム。 - 請求項15に記載のプラズマシステムであって、さらに、
前記複数の一次巻線を介して前記複数のフェライトに電流を供給するための電源を備え、前記複数のフェライトは、前記基板支持体の複数の領域に前記電流を集中させる、プラズマシステム。 - 請求項12に記載のプラズマシステムであって、
前記チャンバ上部における前記複数のプラズマチャンバ流出口の各々は、前記処理チャンバに面した側が広い円錐形状の開口部を有する、プラズマシステム。
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