AUPO281896A0 - Reactive ion etching of silica structures for integrated optics applications - Google Patents

Reactive ion etching of silica structures for integrated optics applications

Info

Publication number
AUPO281896A0
AUPO281896A0 AUPO2818A AUPO281896A AUPO281896A0 AU PO281896 A0 AUPO281896 A0 AU PO281896A0 AU PO2818 A AUPO2818 A AU PO2818A AU PO281896 A AUPO281896 A AU PO281896A AU PO281896 A0 AUPO281896 A0 AU PO281896A0
Authority
AU
Australia
Prior art keywords
reactive ion
ion etching
integrated optics
silica structures
optics applications
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AUPO2818A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NewSouth Innovations Pty Ltd
Original Assignee
NewSouth Innovations Pty Ltd
Unisearch Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NewSouth Innovations Pty Ltd, Unisearch Ltd filed Critical NewSouth Innovations Pty Ltd
Priority to AUPO2818A priority Critical patent/AUPO281896A0/en
Publication of AUPO281896A0 publication Critical patent/AUPO281896A0/en
Priority claimed from AU44448/97A external-priority patent/AU724044B2/en
Application status is Abandoned legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • G02B6/136Integrated optical circuits characterised by the manufacturing method by etching
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166Manufacturing methods
    • G02B2006/12173Masking
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166Manufacturing methods
    • G02B2006/12176Etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
AUPO2818A 1996-10-04 1996-10-04 Reactive ion etching of silica structures for integrated optics applications Abandoned AUPO281896A0 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AUPO2818A AUPO281896A0 (en) 1996-10-04 1996-10-04 Reactive ion etching of silica structures for integrated optics applications

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
AUPO2818A AUPO281896A0 (en) 1996-10-04 1996-10-04 Reactive ion etching of silica structures for integrated optics applications
PCT/AU1997/000663 WO1998015504A1 (en) 1996-10-04 1997-10-03 Reactive ion etching of silica structures
US09/254,532 US20020104821A1 (en) 1996-10-04 1997-10-03 Reactive ion etching of silica structures
JP10517017A JP2001501573A (en) 1996-10-04 1997-10-03 Reactive ion etching the silica structure
KR1019990702873A KR20000048865A (en) 1996-10-04 1997-10-03 Reactive ion etching of silica structures
AU44448/97A AU724044B2 (en) 1996-10-04 1997-10-03 Reactive ion etching of silica structures
CA 2265617 CA2265617A1 (en) 1996-10-04 1997-10-03 Reactive ion etching of silica structures
EP97942702A EP0968142A4 (en) 1996-10-04 1997-10-03 Reactive ion etching of silica structures

Publications (1)

Publication Number Publication Date
AUPO281896A0 true AUPO281896A0 (en) 1996-10-31

Family

ID=3797129

Family Applications (1)

Application Number Title Priority Date Filing Date
AUPO2818A Abandoned AUPO281896A0 (en) 1996-10-04 1996-10-04 Reactive ion etching of silica structures for integrated optics applications

Country Status (7)

Country Link
US (1) US20020104821A1 (en)
EP (1) EP0968142A4 (en)
JP (1) JP2001501573A (en)
KR (1) KR20000048865A (en)
AU (1) AUPO281896A0 (en)
CA (1) CA2265617A1 (en)
WO (1) WO1998015504A1 (en)

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* Cited by examiner, † Cited by third party
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GB2348399A (en) * 1999-03-31 2000-10-04 Univ Glasgow Reactive ion etching with control of etch gas flow rate, pressure and rf power
US6942811B2 (en) * 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US20020158047A1 (en) * 2001-04-27 2002-10-31 Yiqiong Wang Formation of an optical component having smooth sidewalls
US7038293B2 (en) * 2004-03-29 2006-05-02 Northrop Grumman Corp. Dissipation of a charge buildup on a wafer portion
DE102004049233A1 (en) * 2004-10-09 2006-04-20 Schott Ag A process for micro-structuring of substrates made of flat glass
US8187481B1 (en) * 2005-05-05 2012-05-29 Coho Holdings, Llc Random texture anti-reflection optical surface treatment
KR20080017034A (en) * 2005-06-14 2008-02-25 아사히 가라스 가부시키가이샤 Method of finishing pre-polished glass substrate surface
FR2896315B1 (en) * 2005-11-08 2010-09-17 Cit Alcatel amplifying optical fiber
DE102006051550B4 (en) * 2006-10-30 2012-02-02 Fhr Anlagenbau Gmbh Method and apparatus for patterning devices using a material based on silica
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8384007B2 (en) 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US20110115041A1 (en) * 2009-11-19 2011-05-19 Zena Technologies, Inc. Nanowire core-shell light pipes
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US8299472B2 (en) * 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US9190289B2 (en) * 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
JP6165456B2 (en) * 2013-02-12 2017-07-19 株式会社日立ハイテクノロジーズ The plasma processing apparatus
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209356A (en) * 1978-10-18 1980-06-24 General Electric Company Selective etching of polymeric materials embodying silicones via reactor plasmas
US4452665A (en) * 1983-10-12 1984-06-05 International Business Machines Corporation Polymeric halocarbons as plasma etch barriers
US4460435A (en) * 1983-12-19 1984-07-17 Rca Corporation Patterning of submicrometer metal silicide structures
US4482427A (en) * 1984-05-21 1984-11-13 International Business Machines Corporation Process for forming via holes having sloped walls
JPH0426542B2 (en) * 1985-02-20 1992-05-07 Tokyo Shibaura Electric Co
US5302240A (en) * 1991-01-22 1994-04-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
US20020104821A1 (en) 2002-08-08
EP0968142A1 (en) 2000-01-05
EP0968142A4 (en) 2003-08-06
CA2265617A1 (en) 1998-04-16
KR20000048865A (en) 2000-07-25
JP2001501573A (en) 2001-02-06
WO1998015504A1 (en) 1998-04-16

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