JP6165456B2 - Plasma processing equipment - Google Patents

Plasma processing equipment Download PDF

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JP6165456B2
JP6165456B2 JP2013024206A JP2013024206A JP6165456B2 JP 6165456 B2 JP6165456 B2 JP 6165456B2 JP 2013024206 A JP2013024206 A JP 2013024206A JP 2013024206 A JP2013024206 A JP 2013024206A JP 6165456 B2 JP6165456 B2 JP 6165456B2
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wafer
plasma
processing apparatus
plasma processing
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JP2014154744A (en
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小林 浩之
浩之 小林
大森 健史
健史 大森
誠 縄田
誠 縄田
和幸 池永
和幸 池永
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株式会社日立ハイテクノロジーズ
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  The present invention relates to a plasma processing apparatus.

  Plasma processing apparatuses such as plasma etching apparatuses and plasma CVD apparatuses are widely used in the manufacturing process of semiconductor devices such as DRAMs and microprocessors. One of the problems in processing a semiconductor device using a plasma processing apparatus is to reduce the number of foreign matters attached to an object to be processed such as a wafer. For example, when foreign particles fall on the fine pattern of the object to be processed during or before the etching process, the etching of the part is locally inhibited. As a result, defects such as disconnection and short circuit occur in the fine pattern of the object to be processed, resulting in a decrease in yield. Therefore, many methods have been devised to control the transport of foreign particles using gas viscous force, thermophoretic force, clonal force, etc., and reduce the number of foreign matters attached to the object to be processed.

  Non-Patent Document 1 reports the behavior of foreign particles examined from the viewpoint of motion speed.

H. Kobayashi, Jpn. J. Appl. Phys. 50 (2011) 08JE01

  Although the inventors have proposed many methods for reducing the number of foreign substances, the number of foreign substances adhering to the object to be processed, especially the number of minute foreign substances that may become a problem when the device pattern is miniaturized in the future, is not necessarily reduced. Therefore, the behavior of foreign particles in the plasma processing apparatus was examined in detail from the viewpoint of “movement speed” (Non-Patent Document 1). As a result, low-speed foreign particles (low-speed foreign particles) that can be controlled to some extent by gas flow, medium-speed foreign particles (medium-speed foreign particles) that can be controlled to some extent by electrostatic force, and electrostatic force It was found that there were high-speed foreign particles (high-speed foreign particles) that could not be easily controlled by gas viscous force. As a result of further investigation, it was found that high-speed foreign particles are generated in the chamber in addition to the exhaust turbo molecular pump in the chamber. These high-speed foreign particles are scattered as long as possible in the chamber, and gradually decelerated due to gas viscous force and reflection from the wall to become medium-speed foreign particles or low-speed foreign particles. Transportation needs to be controlled.

  The objective of this invention is providing the plasma processing apparatus which can reduce the adhesion amount of the foreign particle to a to-be-processed object.

As one embodiment for achieving the above object, a processing chamber, means for supplying gas to the processing chamber, exhaust means for reducing the pressure of the processing chamber, and a high-frequency power source for generating plasma in the processing chamber, in the plasma processing apparatus including a stage for placing a target object, and a high frequency bias power source for accelerating the ions incident the object to be processed,
A wall surface arranged in a side surface direction of the object to be processed, the normal line of the wall surface having an inclination with respect to a vertical direction of the surface of the object to be processed, the center of the object to be processed being located on the surface of the object to be processed It faces the opposite side of the axis that passes in the vertical direction,
A plasma processing apparatus having a confining plate between the stage and the wall surface of the processing chamber .

  ADVANTAGE OF THE INVENTION According to this invention, the plasma processing apparatus which can reduce the adhesion amount of the foreign material particle to a to-be-processed object can be provided.

1 is a schematic cross-sectional view of a plasma processing apparatus (plasma etching apparatus) according to a first embodiment of the present invention. It is a figure for demonstrating the mechanism in which a high-speed foreign material particle generate | occur | produces in the process chamber of a plasma processing apparatus. It is a figure for demonstrating the structure of the wall surface for suppressing generation | occurrence | production of the high-speed foreign particle in the processing chamber of a plasma processing apparatus. It is a figure for demonstrating the locus | trajectory of the foreign material particle which injects into the sheath between a to-be-processed object (wafer) and plasma. It is a figure for demonstrating the subject when not attaching the inclination to the confinement board of a plasma processing apparatus. It is a schematic block diagram of the plasma processing apparatus (plasma etching apparatus) which concerns on 2nd Example of this invention. In the plasma processing apparatus which concerns on the 2nd Example of this invention, it is a figure for demonstrating the direction of an inclination when inclining to the wall surface which becomes a perpendicular | vertical angle with respect to a wafer surface. In the plasma processing apparatus concerning the 2nd example of the present invention, it is a figure explaining the direction of the inclination in the case of giving inclination to the wall surface which becomes a horizontal angle to a wafer surface. An example of the etching sequence for improving the deceleration effect of a high-speed foreign material using the plasma processing apparatus concerning the 2nd example of the present invention is shown.

  Hereinafter, the present invention will be described with reference to examples. In the embodiment, a plasma etching apparatus will be described as an example, but the present invention is not limited to this.

  A first embodiment of the present invention will be described with reference to FIGS. In addition, the same code | symbol shows the same component.

  FIG. 1 is a schematic cross-sectional view of a μ wave-ECR plasma etching apparatus which is one of plasma processing apparatuses according to this embodiment. Microwaves for generating plasma are transmitted to the cavity through the waveguide 3 and introduced into the processing chamber 1 through the quartz top plate 6 and the shower plate 5 installed at the upper part of the vacuum chamber 9. . The processing gas is supplied from a processing gas supply means (not shown) to a space between the shower plate 5 and the top plate 6 and is processed through a gas hole (not shown) provided in the shower plate 5. Introduced in. A stage electrode (stage) 4 for placing the object to be processed (wafer) 2 is placed below the shower plate. A turbo molecular pump 41 is attached via a pressure regulating valve unit 43 below the vacuum chamber 9 as an exhaust means for reducing the pressure in the processing chamber 1 and exhausting the supplied processing gas. Although not shown, a magnetic field coil for forming a magnetic field is installed around the vacuum chamber 9.

  An inner chamber 83 is installed in an inner wall portion that forms a space above the wafer in the processing chamber 1. The inner chamber 83 is an insulating material such as quartz, sintered yttria, sintered alumina. A confinement plate 89 is installed between the stage electrode 4 and the vacuum chamber 9 at a height position equivalent to the wafer 2 or a height position below the wafer 2. The confining plate 89 is provided with a large number of holes, and the processing gas supplied from the shower plate 5 flows through the holes of the confining plate 89 to the exhaust means side. The diameter of the hole provided in the confinement plate 89 is, for example, 5 mmφ, and the aperture ratio is, for example, 50%. On the other hand, since most of the electric field due to plasma or high-frequency power is blocked by the confinement plate 89, almost no plasma is generated in the region below the confinement plate 89, and the generation of plasma is a space above the confinement plate 89. It can be limited to. The material of the confinement plate 89 is a conductive material such as SiC, or a thin dielectric layer such as alumina or yttria having a thickness of about 100 μm is formed on the surface of a conductive base material such as aluminum. It was made to function as a ground from the viewpoint of plasma. As a result, the inner wall (inner chamber 83) in a portion located generally above the wafer 2 is covered with a thick insulator (dielectric), and functions as a ground at a position substantially below the wafer surface. It was set as the structure which installed the member to do. Further, the height position of the upper surface of the confinement plate 89 is inclined so as to be higher on the electrode side and lower on the chamber outer wall side. Further, the confinement plate 89 also has an effect of confining high-speed foreign particles caused by the turbo molecular pump in the lower part of the processing chamber. Reference numeral 86 denotes an inner chamber that functions as a ground for high frequencies.

Next, the reason for such an inner wall configuration will be described. FIG. 2A is a diagram for explaining the behavior of foreign particles 80 separated from a conductive wall surface or a wall surface in which a thin dielectric layer is formed with respect to the thickness of the sheath on the surface of the conductive material. Reference numeral 82 denotes a surface functioning as a ground, and reference numeral 100 denotes a boundary between the plasma 102 and the sheath 101. The foreign particles 80 peeled off from the wall surface during plasma discharge are negatively charged before peeling off from the wall surface or immediately after peeling. Since the wall surface is negatively charged with respect to the plasma, the space potential becomes lower as it approaches the wall surface, and the potential gradient is particularly large (the electric field strength is strong) in the sheath. Therefore, the negatively charged foreign particles are rapidly accelerated in the sheath. As shown in FIG. 2A, for example, even when the movement direction at the time of peeling from the wall surface is oblique (upper right direction in FIG. 2A), the sheath 101 is accelerated in the direction perpendicular to the wall surface. As indicated by arrows A, B, and C, the direction of motion gradually becomes perpendicular to the wall surface while increasing the speed. Therefore, the discharge direction of the foreign particles becomes a distribution shifted in the direction perpendicular to the wall surface. The potential of the wall surface with respect to the plasma (sheath potential) mainly depends on the wafer bias voltage and the ratio of the wafer area to the ground area. For example, if the wafer area and the effective earth area seen from the plasma can be regarded as the same, and the wafer bias Peak-To-Peak voltage is set to 500 V, this voltage is distributed to the wafer and the earth at 250 V, respectively. In addition, the sheath potential of the earth is approximately half that value, and is −125 V, which is a negative value. When the effective area of the ground increases with respect to the area of the wafer, the sheath potential on the wafer side decreases and the sheath potential on the ground side increases. On the other hand, when the substantial area of the ground is reduced, the drop in the sheath potential on the ground side is enlarged, and the drop in the sheath potential on the wafer is reduced (the potential is increased). Since the wafer bias power is intended to accelerate ions incident on the wafer, it is important to sufficiently increase the ground area to lower the potential of the sheath formed on the wafer. In order to reduce ground consumption, it is desirable to increase the area of the ground so that the potential of the sheath formed on the ground does not drop so much that the energy of ions incident on the ground is lowered. When no wafer bias is applied (when “bias application effect” by high-frequency power does not affect sheath formation), according to Baume theory, the wall potential is three times the electron temperature relative to the plasma potential. A low value. For example, when the electron temperature is 3 eV, the sheath potential is about −10V. As a result, during the etching with the wafer bias applied, the foreign particles separated from the wall functioning as the ground are accelerated to the kinetic energy possessed as the initial velocity in the direction perpendicular to the wall with several hundred volts. You have the total energy of kinetic energy. For example, the diameter of the foreign particles is 0.1 μm, the specific gravity is 2 g / cm 2 , and the initial velocity is 40 m / s. In this case, the kinetic energy possessed as the initial speed is about 5000 eV. Further, the number of electrons is set to 100 as the charge amount of the foreign particles. The sheath potential formed on the ground is -100V. In this case, the energy accelerated by the sheath is 10000 eV. Therefore, the kinetic energy when entering the plasma is approximately 15000 eV.

  FIG. 2B shows a case where an insulating (dielectric) inner chamber 83 is installed between the conductive member 81 and the plasma 102 as the configuration of the inner wall. The thickness T2 of the inner chamber 83 is approximately the same as the thickness T1 of the sheath, but any insulator having a thickness of a fraction of the sheath thickness can be used. In the case of process plasma, the thickness T1 of the sheath 101 is generally about 1 to 5 mm when a bias is applied, and about 0.1 to 1 mm when the effect of a high frequency bias can be ignored. In the case of FIG. 2B, the decrease in the wall potential due to the high-frequency power for generating plasma and the high-frequency bias power for accelerating ions incident on the object to be processed is reduced. That is, the sheath potential is less affected by the wafer bias power and is closer to the potential determined by Baume theory. Therefore, the amount of acceleration in the sheath of foreign particles that are peeled off from the wall surface and negatively charged is smaller than in the case of FIG. 2A. 2B shows the case where the insulating inner chamber 83 is installed between the conductive chamber and the plasma, the dielectric film is covered on the surface of the vacuum chamber 9, and the inner chamber 83 is covered on the surface. May be installed. The inner chamber 83 may have a structure in which a thick dielectric layer is formed on the surface of a conductive material. Further, a thick dielectric layer may be provided on the surface of the vacuum chamber 9 so that the inner chamber 83 is not necessary. Further, using the same assumption as in the kinetic energy estimation example described in FIG. 2A, even if the kinetic energy as the initial speed is the same as 5000 eV, when the acceleration amount in the sheath is 10 V, the acceleration energy in the sheath is 1000 eV. . Therefore, the kinetic energy when incident on the plasma is 6000 eV, which can be reduced to about 40% (reduction of 60%) as compared with the case where the inner chamber 83 shown in FIG. 2A is not provided.

  Next, the velocity of foreign particles incident on the wafer 2 and the adhesion to the wafer will be described with reference to FIG. As already described, since the potential of the wafer 2 is negative with respect to the plasma 102, the negatively charged foreign particles receive a strong repulsive force in the direction away from the wafer 2 as an electrostatic force. Therefore, when the speed of the foreign particles is low (medium speed), the locus of the foreign particles flying toward the wafer 2 is as shown on the right side of FIG. Does not adhere. On the other hand, when the speed of the foreign particles is very high, the foreign particles reach the wafer 2 by breaking through the electrostatic force generated by the sheath 101 as shown on the left side of FIG. Or adhere). In the description of FIG. 2A and FIG. 2B, trial calculation of kinetic energy is shown as an example. In FIG. 2A, in the case of FIG. 2A, 15000 eV, and in FIG. When the potential of the sheath 101 on the wafer 2 is, for example, −120V, the kinetic energy component in the direction perpendicular to the wafer 2 needs to be 12000 eV or more when the number of electrons of the foreign particles is 100. In the case of FIG. 2A, the wafer 2 can be reached when the angle of entry into the sheath 101 is in the range of about ± 30 ° with respect to the direction perpendicular to the sheath 101. On the other hand, in the case of the kinetic energy of 6000 eV shown as an example in FIG. 2B, the locus becomes the one shown on the right in FIG. . Whether foreign particles that have entered the sheath 101 formed on the wafer 2 can adhere to the wafer 2 depends greatly on the speed of the foreign particles. In order to reduce the number of foreign particles attached to the wafer 2, the wafer 2 It is important to reduce the speed of the foreign particles when entering the sheath 101 formed above. Therefore, the wall surface in FIG. 2A where high-speed foreign particle particles are likely to be generated is preferably installed below the chamber, and the wall surface in FIG. 2B where high-speed foreign particle particles are unlikely to be generated is installed above the chamber.

  Further, increasing the effective area of the earth as viewed from the plasma 102 to reduce the potential drop of the sheath 101 formed on the earth is also a means for suppressing the generation of high-speed foreign particles. For this reason, care must be taken when installing the earth below the chamber so that the effective earth area is not reduced.

  Increasing the wafer bias is one measure for preventing foreign particles flying toward the wafer 2 from adhering to the wafer 2. However, in this case, since the plasma processing (processed shape and processing rate of the fine pattern) on the object to be processed (wafer) 2 is affected, the speed of the foreign particles when thrown into the sheath 101 is reduced if possible. It is better to consider measures for this. However, it is effective as a measure for reducing the number of foreign particles adhering to the wafer 2 to apply the wafer bias power at a timing that has little influence on the process such as ignition and extinguishing of the plasma 102 and gas switching.

  As a method of reducing the speed of the foreign particles after being incident on the plasma 102, the transport distance of the foreign particles in the chamber is lengthened, and during that time, the speed is reduced by the gas viscous force caused by the processing gas. It is possible to increase the number of reflections by utilizing the fact that it is decelerated during reflection. In addition, as a result of examining the change in speed in the direction perpendicular to the wall surface before and after reflection when the inventors reflected the light on the wall surface, it was found that the speed was reduced by about 20%. That is, when the initial velocity is 100 m / s, and it is always perpendicularly incident on the wall surface, and the change in velocity in the sheath is ignored for simplicity, 80 m / s → 64 m / It can be expected to gradually decelerate from s → 51 m / s → 40 m / s.

  In the configuration shown in FIG. 1, in the space above the wafer 2, the foreign particles separated from the wall are not easily accelerated at high speed, and the ground in the space below the wafer 2 is grounded as shown in FIG. 2A. The number of collisions on the wall surface until the foreign particles are scattered at an angle close to the normal direction side with respect to the wall surface and inclined to the sheath 101 on the wafer 2 is applied. Have a lot. For example, as in the case of the high-speed foreign particle indicated by reference numeral 80-1 in FIG. Scatter. The foreign particles are reflected by the wall a plurality of times and enter the sheath 101 formed immediately above the wafer 2. At this time, the foreign particles are sufficiently slowed down as a medium-speed foreign matter and do not adhere to the wafer 2. Further, like the medium-speed foreign particle indicated by reference numeral 80-2, the foreign particle separated from the space above the wafer 2 is not reflected by the inner wall and passes through a relatively short moving distance to the sheath 101 on the wafer 2. It is possible to rush. However, the foreign particles 80-2 do not adhere to the wafer 2 because the speed of the foreign particles 80-2 is low. In addition, when the high-speed foreign particle 80-1 is reflected by the wall, the high-speed foreign particle newly released from the wall is negligible.

  On the other hand, FIG. 4 shows a case where the confinement plate 89 is not inclined in the configuration of FIG. In this case, the high-speed foreign particle 80-3 generated from the confinement plate 89 is reflected only once by the shower plate 5 (inner wall) and enters the sheath 101 on the wafer 2. Since there is little deceleration effect due to the collision on the inner wall, the risk of adhering to the wafer 2 is high. From the above, it can be seen that inclining the confinement plate 89 has an effect of reducing the number of foreign particles incident on the sheath 101 on the wafer 2 at high speed.

  As described above, according to the present embodiment, it is possible to provide a plasma processing apparatus that can reduce the amount of foreign particles adhering to the object to be processed.

  A second embodiment of the present invention will be described with reference to FIGS. The matters described in the first embodiment but not described in the present embodiment can also be applied to the present embodiment.

  FIG. 5 is a schematic sectional view of the plasma etching apparatus according to the present embodiment. In the plasma etching apparatus shown in FIG. 5, a wall surface functioning as a ground is installed on the side wall surface of the wafer 2 and the wall surface obliquely above the wafer 2. The ground 82-1 which is obliquely above the wafer 2 is inclined on the surface H, and the normal of the surface H is directed obliquely upward so as not to intersect the surface of the wafer 2. As a result, most of the foreign particle 80-4 accelerated by the sheath formed in parallel with the wall surface H and released into the plasma is scattered in a direction perpendicular to the wall surface H so as not to reach the wafer 2 directly. I have to. Further, although the surface I of the ground 82-2 is also inclined, it is opposite to the inclination direction H because it is located on the substantially side surface of the wafer. That is, the normal direction of the surface I faces obliquely downward so as not to intersect the surface of the wafer 2. Also in this embodiment, a confining plate can be provided between the stage 4 and the wall surface of the processing chamber 1.

  This is simply shown in FIG. 6 shows a chamber having a rectangular cross section (conventional configuration), a stage 4 on which a wafer is placed, and a wafer 2. A dotted line Z indicates a height position slightly above the wafer 2. In the right diagram of FIG. 6, the side surface E located above the height Z is inclined so that the normal line faces obliquely upward so as not to intersect the surface of the wafer 2. for. The side surface F below the height Z is directed obliquely downward so that the normal line does not intersect the surface of the wafer 2, and foreign particles generated from the side surface F are scattered below the chamber. That is, by providing an inclination, a wall surface at a height position where foreign particles can be directly scattered on the exhaust side is inclined so that the foreign particles are scattered on the exhaust side. In addition, in the space above the wafer surface where it is difficult to scatter foreign particles directly on the exhaust side, the foreign particle emission angle is such that it will collide with the wall surface as many times as possible before reaching the wafer. Is inclined so as to be above the chamber.

  In FIG. 5, the surface J is also inclined so that the normal line of the surface J faces the outside of the vacuum chamber 9 so as not to intersect the surface of the wafer 2. As a result, foreign particles that are accelerated and released in a direction perpendicular to the surface J by the sheath formed on the surface J are prevented from directly scattering to the wafer side. FIG. 7 shows how to set this angle.

  In the left diagram of FIG. 7, there are wall surfaces A, B, C, and D parallel to the wafer 2. In the right figure of FIG. 7, this wall surface is inclined. As indicated by the wall surfaces A ′, B ′, and C ′, the wall surfaces A, B, and C parallel to the wafer 2 face the outside of the chamber so that the normal line 90 of the wall surface does not intersect the wafer 2 surface, that is, the wafer It is made to face in the direction opposite to the axis R passing through the center vertically.

  However, D at the bottom of the chamber is opposite to A, B, and C, that is, the normal line is directed to the axis R side. This is because the electrode 4 reflects the foreign particles generated on the wall surface D ′. This is because it is possible to prevent foreign particles from scattering above the chamber. As shown in FIG. 4, when a wall surface functioning as a ground is provided on the wafer side wall or the wall surface above the wafer, the wall surface is inclined based on the concept described in FIGS. 6 and 7 and accelerated by the sheath. Even if the high-speed foreign particles released in this way fly directly above the wafer, they are sufficiently decelerated due to multiple reflections on the wall surface and the viscous force with the processing gas during long-distance movement, before they are applied to the sheath on the wafer. I tried to rush. In the second embodiment as well, it is possible to prevent high-speed foreign particles caused by the turbo molecular pump generated in the lower portion of the processing chamber from directly entering the wafer surface.

Finally, we will describe how to deal with high-speed foreign particles from the viewpoint of operation sequence.
FIG. 8 shows the discharge power, wafer bias power, and gas pressure in order from the top. The horizontal axis indicates time. In the example of FIG. 8, the case of processing in the order of wafer loading → ignition → STEP 1 etching → gas switching → STEP 2 etching → static elimination (fire extinguishing) → wafer unloading is shown. The gas pressure is increased in ignition, gas switching between STEPs, and static elimination (extinguishing) with little influence on the etching process on the wafer. Of course, it is desirable that the gas pressure be higher even during the etching process of STEP1 and STEP2 if the etching process is not affected. By increasing the gas pressure, the effect of decelerating foreign particles due to gas viscosity increases, so the speed of foreign particles flying toward the wafer can be reduced and reduced to a speed that can be handled as "medium-speed foreign particles". If possible, the sheath formed on the wafer can prevent foreign particles from adhering to the wafer. In addition, it is effective to apply a wafer bias power as high as possible during ignition, between STEP, and during fire extinguishing, as long as the process is not affected.

  Although the present invention has been described in detail above, the description so far has been made on the assumption that the foreign particles are accelerated in the direction perpendicular to the wall surface by the sheath. On the other hand, even if the plasma is not turned on, that is, the sheath is not formed (or a vacuum device that does not use plasma), the wall surface is not charged or the potential of the wall surface and the components in the chamber are not uniform. The foreign particles are accelerated according to the space potential distribution in the chamber. If it can be considered that the equipotential surface is formed in a direction substantially parallel to the wall surface, the acceleration direction due to the electric field of the foreign particles becomes a distribution biased in the direction perpendicular to the wall surface. It is effective to incline the chamber in the same way as the method shown in.

  As described above, according to the present embodiment, it is possible to provide a plasma processing apparatus that can reduce the amount of foreign particles adhering to the object to be processed. In addition, high-speed foreign matter can be decelerated by increasing the gas pressure in the processing chamber, increasing the gas flow rate, or the like without affecting the plasma processing on the object to be processed or during a short period.

  Although the present invention has been described in detail above, an example of a representative example of the present invention is as follows.

  A processing chamber for processing an object to be processed, a processing gas supply means for supplying a processing gas to the processing chamber, a processing chamber exhaust means for reducing the pressure of the processing chamber, and a high-frequency power source for generating plasma In the semiconductor manufacturing apparatus having the above structure, the inner wall of the processing chamber that forms the space above the wafer is covered with an insulator having a thickness that is a fraction of the sheath thickness, and the region below the wafer In order to function as an earth, the inner wall is made of a material having an insulating film sufficiently thin with respect to the sheath thickness or a conductive material. In addition, the surface that functions as the ground is inclined so that the wafer is not seen in the vertical direction of the surface, and foreign particles generated from the surface that functions as the ground do not collide with other members such as the inner wall. In addition, it was made not to fly directly on the wafer.

  In other words, the high-speed foreign particles enter the sheath formed on the wafer surface by making the initial movement direction of the high-speed foreign particles generated by being peeled off the wall surface and accelerated by the sheath not reach the wafer surface directly. The movement distance until the start and the number of collisions on the wall surface were increased, and the speed was reduced to a level at which the transport could be sufficiently controlled by electrostatic force, so that it did not adhere to the wafer. Accordingly, the number of foreign matters attached to the object to be processed during etching can be reduced, and the yield of the semiconductor device can be improved.

  In addition, this invention is not limited to an above-described Example, Various modifications are included. For example, the above-described embodiments have been described in detail for easy understanding of the present invention, and are not necessarily limited to those having all the configurations described. Further, a part of the configuration of a certain embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of a certain embodiment. Further, it is possible to add, delete, and replace other configurations for a part of the configuration of each embodiment.

1: processing chamber, 2: object to be processed (wafer), 3: waveguide, 4: placement electrode (stage), 5: shower plate, 6: quartz top plate, 9: vacuum chamber, 41: turbo molecular pump 43: Pressure regulating valve unit, 80: Foreign particles, 81: Conductive member, 82: Surface functioning as ground, 83: Inner chamber, 89: Confinement plate, 90: Normal (line perpendicular to the wall surface), 100 : Plasma sheath boundary, 101: sheath, 102: plasma.

Claims (5)

  1. A processing chamber, means for supplying gas to the processing chamber, exhaust means for reducing the pressure of the processing chamber, a high-frequency power source for generating plasma in the processing chamber, and a stage for mounting the object to be processed in the plasma processing apparatus and a high frequency bias power source for accelerating the ions incident the object to be processed,
    A wall surface arranged in a side surface direction of the object to be processed, the normal line of the wall surface having an inclination with respect to a vertical direction of the surface of the object to be processed, the center of the object to be processed being located on the surface of the object to be processed It faces the opposite side of the axis that passes in the vertical direction,
    A plasma processing apparatus comprising a confining plate between the stage and a wall surface of the processing chamber .
  2. The plasma processing apparatus according to claim 1 ,
    A plasma processing apparatus , wherein a side wall of the processing chamber is covered with an insulator layer .
  3. The plasma processing apparatus according to claim 2 , wherein
    The thickness of the insulator layer, a plasma processing apparatus according to claim der Rukoto least 5mm or less 0.1 mm.
  4. The plasma processing apparatus according to claim 1 ,
    The plasma processing apparatus , wherein the confinement plate functions as a ground as viewed from the plasma.
  5. The plasma processing apparatus according to claim 1 ,
    The plasma processing apparatus , wherein the confinement plate has a large number of holes .
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JPH05267230A (en) * 1992-03-24 1993-10-15 Hitachi Ltd Dryetching system
AUPO281896A0 (en) * 1996-10-04 1996-10-31 Unisearch Limited Reactive ion etching of silica structures for integrated optics applications
CN100479109C (en) * 2001-03-28 2009-04-15 大见忠弘;东京毅力科创株式会社 Device and method for plasma processing, and slow-wave plate
KR20030090305A (en) * 2002-05-22 2003-11-28 동경엘렉트론코리아(주) Exhaust baffle plate for plasma discharge device

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