JP6293443B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6293443B2
JP6293443B2 JP2013194755A JP2013194755A JP6293443B2 JP 6293443 B2 JP6293443 B2 JP 6293443B2 JP 2013194755 A JP2013194755 A JP 2013194755A JP 2013194755 A JP2013194755 A JP 2013194755A JP 6293443 B2 JP6293443 B2 JP 6293443B2
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JP
Japan
Prior art keywords
oxide
layer
oxide layer
semiconductor layer
oxide semiconductor
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Expired - Fee Related
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JP2013194755A
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English (en)
Japanese (ja)
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JP2014078706A (ja
JP2014078706A5 (enExample
Inventor
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013194755A priority Critical patent/JP6293443B2/ja
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Publication of JP2014078706A5 publication Critical patent/JP2014078706A5/ja
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
JP2013194755A 2012-09-24 2013-09-20 半導体装置 Expired - Fee Related JP6293443B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013194755A JP6293443B2 (ja) 2012-09-24 2013-09-20 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012210230 2012-09-24
JP2012210230 2012-09-24
JP2013194755A JP6293443B2 (ja) 2012-09-24 2013-09-20 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018023798A Division JP2018125534A (ja) 2012-09-24 2018-02-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2014078706A JP2014078706A (ja) 2014-05-01
JP2014078706A5 JP2014078706A5 (enExample) 2016-11-10
JP6293443B2 true JP6293443B2 (ja) 2018-03-14

Family

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Family Applications (5)

Application Number Title Priority Date Filing Date
JP2013194755A Expired - Fee Related JP6293443B2 (ja) 2012-09-24 2013-09-20 半導体装置
JP2018023798A Withdrawn JP2018125534A (ja) 2012-09-24 2018-02-14 半導体装置
JP2019154377A Withdrawn JP2019197937A (ja) 2012-09-24 2019-08-27 半導体装置
JP2021106274A Withdrawn JP2021153204A (ja) 2012-09-24 2021-06-28 半導体装置
JP2023195053A Withdrawn JP2024016261A (ja) 2012-09-24 2023-11-16 半導体装置

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2018023798A Withdrawn JP2018125534A (ja) 2012-09-24 2018-02-14 半導体装置
JP2019154377A Withdrawn JP2019197937A (ja) 2012-09-24 2019-08-27 半導体装置
JP2021106274A Withdrawn JP2021153204A (ja) 2012-09-24 2021-06-28 半導体装置
JP2023195053A Withdrawn JP2024016261A (ja) 2012-09-24 2023-11-16 半導体装置

Country Status (7)

Country Link
US (5) US9269821B2 (enExample)
JP (5) JP6293443B2 (enExample)
KR (3) KR102210578B1 (enExample)
CN (2) CN104662668B (enExample)
DE (1) DE112013004655T5 (enExample)
TW (6) TWI671910B (enExample)
WO (1) WO2014046220A1 (enExample)

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JP6706638B2 (ja) * 2018-03-07 2020-06-10 シャープ株式会社 半導体装置およびその製造方法
CN109103223B (zh) * 2018-08-17 2021-03-02 京东方科技集团股份有限公司 一种oled发光器件及其制备方法
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KR20210013336A (ko) 2021-02-03
KR102368752B1 (ko) 2022-03-03
KR102445681B1 (ko) 2022-09-21
TW201417293A (zh) 2014-05-01
US20160155854A1 (en) 2016-06-02
JP2014078706A (ja) 2014-05-01
CN108321209B (zh) 2022-05-13
US9269821B2 (en) 2016-02-23
KR20150058425A (ko) 2015-05-28
US11094830B2 (en) 2021-08-17
WO2014046220A1 (en) 2014-03-27
US20190326439A1 (en) 2019-10-24
TW202209685A (zh) 2022-03-01
JP2024016261A (ja) 2024-02-06
TWI746200B (zh) 2021-11-11
JP2021153204A (ja) 2021-09-30
TWI821777B (zh) 2023-11-11
US12125918B2 (en) 2024-10-22
JP2018125534A (ja) 2018-08-09
TWI671910B (zh) 2019-09-11
TW201836154A (zh) 2018-10-01
US10211345B2 (en) 2019-02-19
KR102210578B1 (ko) 2021-02-02
US20140084287A1 (en) 2014-03-27
DE112013004655T5 (de) 2015-07-02
US20210226060A1 (en) 2021-07-22
US9831351B2 (en) 2017-11-28
TWI627750B (zh) 2018-06-21
TW202105748A (zh) 2021-02-01

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