JP6034607B2 - 蒸着源アセンブリ、有機層蒸着装置及びそれを利用した有機発光表示装置の製造方法 - Google Patents
蒸着源アセンブリ、有機層蒸着装置及びそれを利用した有機発光表示装置の製造方法 Download PDFInfo
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- JP6034607B2 JP6034607B2 JP2012159480A JP2012159480A JP6034607B2 JP 6034607 B2 JP6034607 B2 JP 6034607B2 JP 2012159480 A JP2012159480 A JP 2012159480A JP 2012159480 A JP2012159480 A JP 2012159480A JP 6034607 B2 JP6034607 B2 JP 6034607B2
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- 238000007740 vapor deposition Methods 0.000 title claims description 230
- 239000012044 organic layer Substances 0.000 title claims description 104
- 238000004519 manufacturing process Methods 0.000 title description 17
- 230000008021 deposition Effects 0.000 claims description 363
- 239000000463 material Substances 0.000 claims description 126
- 238000000059 patterning Methods 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 91
- 230000000903 blocking effect Effects 0.000 claims description 51
- 239000002019 doping agent Substances 0.000 claims description 45
- 239000010410 layer Substances 0.000 claims description 38
- 230000004888 barrier function Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 description 313
- 239000010408 film Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 14
- 238000001704 evaporation Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- -1 2,2-diphenyl-ethen-1-yl Chemical group 0.000 description 3
- OBAJPWYDYFEBTF-UHFFFAOYSA-N 2-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C3=C4C=CC=CC4=C(C=4C=C5C=CC=CC5=CC=4)C4=CC=C(C=C43)C(C)(C)C)=CC=C21 OBAJPWYDYFEBTF-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- BIXGISJFDUHZEB-UHFFFAOYSA-N 2-[9,9-bis(4-methylphenyl)fluoren-2-yl]-9,9-bis(4-methylphenyl)fluorene Chemical compound C1=CC(C)=CC=C1C1(C=2C=CC(C)=CC=2)C2=CC(C=3C=C4C(C5=CC=CC=C5C4=CC=3)(C=3C=CC(C)=CC=3)C=3C=CC(C)=CC=3)=CC=C2C2=CC=CC=C21 BIXGISJFDUHZEB-UHFFFAOYSA-N 0.000 description 2
- OSQXTXTYKAEHQV-WXUKJITCSA-N 4-methyl-n-[4-[(e)-2-[4-[4-[(e)-2-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]ethenyl]phenyl]phenyl]ethenyl]phenyl]-n-(4-methylphenyl)aniline Chemical group C1=CC(C)=CC=C1N(C=1C=CC(\C=C\C=2C=CC(=CC=2)C=2C=CC(\C=C\C=3C=CC(=CC=3)N(C=3C=CC(C)=CC=3)C=3C=CC(C)=CC=3)=CC=2)=CC=1)C1=CC=C(C)C=C1 OSQXTXTYKAEHQV-WXUKJITCSA-N 0.000 description 2
- VIZUPBYFLORCRA-UHFFFAOYSA-N 9,10-dinaphthalen-2-ylanthracene Chemical compound C12=CC=CC=C2C(C2=CC3=CC=CC=C3C=C2)=C(C=CC=C2)C2=C1C1=CC=C(C=CC=C2)C2=C1 VIZUPBYFLORCRA-UHFFFAOYSA-N 0.000 description 2
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
- HFPKZKXVTHRNFZ-UHFFFAOYSA-N C1=CC(C)=CC=C1C1(C=2C=CC(C)=CC=2)C2=CC(C=3C=C4C(C5=CC(=CC=C5C4=CC=3)C=3C=C4C(C5=CC=CC=C5C4=CC=3)(C=3C=CC(C)=CC=3)C=3C=CC(C)=CC=3)(C=3C=CC(C)=CC=3)C=3C=CC(C)=CC=3)=CC=C2C2=CC=CC=C21 Chemical compound C1=CC(C)=CC=C1C1(C=2C=CC(C)=CC=2)C2=CC(C=3C=C4C(C5=CC(=CC=C5C4=CC=3)C=3C=C4C(C5=CC=CC=C5C4=CC=3)(C=3C=CC(C)=CC=3)C=3C=CC(C)=CC=3)(C=3C=CC(C)=CC=3)C=3C=CC(C)=CC=3)=CC=C2C2=CC=CC=C21 HFPKZKXVTHRNFZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- LKQSEFCGKYFESN-UHFFFAOYSA-N 2-(2-methylphenoxy)-4h-1,3,2$l^{5}-benzodioxaphosphinine 2-oxide Chemical compound CC1=CC=CC=C1OP1(=O)OC2=CC=CC=C2CO1 LKQSEFCGKYFESN-UHFFFAOYSA-N 0.000 description 1
- RASFLGVDOLMZBD-UHFFFAOYSA-N 2-(9,9'-spirobi[fluorene]-2-yl)-9,9'-spirobi[fluorene] Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1(C1=C2)C3=CC=CC=C3C1=CC=C2C(C=C12)=CC=C2C2=CC=CC=C2C21C1=CC=CC=C1C1=CC=CC=C21 RASFLGVDOLMZBD-UHFFFAOYSA-N 0.000 description 1
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- MZYDBGLUVPLRKR-UHFFFAOYSA-N 9-(3-carbazol-9-ylphenyl)carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC(N2C3=CC=CC=C3C3=CC=CC=C32)=CC=C1 MZYDBGLUVPLRKR-UHFFFAOYSA-N 0.000 description 1
- IEQGNDONCZPWMW-UHFFFAOYSA-N 9-(7-carbazol-9-yl-9,9-dimethylfluoren-2-yl)carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C(C3(C)C)=CC(=CC=2)N2C4=CC=CC=C4C4=CC=CC=C42)C3=C1 IEQGNDONCZPWMW-UHFFFAOYSA-N 0.000 description 1
- KKKJYKXDWACECM-UHFFFAOYSA-N 9-(9,9-dimethylfluoren-1-yl)carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=C2C(C)(C)C3=CC=CC=C3C2=CC=C1 KKKJYKXDWACECM-UHFFFAOYSA-N 0.000 description 1
- DVNOWTJCOPZGQA-UHFFFAOYSA-N 9-[3,5-di(carbazol-9-yl)phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC(N2C3=CC=CC=C3C3=CC=CC=C32)=CC(N2C3=CC=CC=C3C3=CC=CC=C32)=C1 DVNOWTJCOPZGQA-UHFFFAOYSA-N 0.000 description 1
- FAXIBVQNHSURLH-UHFFFAOYSA-N 9-[3-[4-carbazol-9-yl-9-(2-methylphenyl)fluoren-9-yl]-4-methylphenyl]carbazole Chemical compound CC1=CC=CC=C1C1(C=2C(=CC=C(C=2)N2C3=CC=CC=C3C3=CC=CC=C32)C)C(C=CC=C2N3C4=CC=CC=C4C4=CC=CC=C43)=C2C2=CC=CC=C21 FAXIBVQNHSURLH-UHFFFAOYSA-N 0.000 description 1
- LTUJKAYZIMMJEP-UHFFFAOYSA-N 9-[4-(4-carbazol-9-yl-2-methylphenyl)-3-methylphenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C(=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C)C(C)=C1 LTUJKAYZIMMJEP-UHFFFAOYSA-N 0.000 description 1
- GFEWJHOBOWFNRV-UHFFFAOYSA-N 9-[4-[9-(4-carbazol-9-ylphenyl)fluoren-9-yl]phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C(C=C1)=CC=C1C1(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C2=CC=CC=C2C2=CC=CC=C12 GFEWJHOBOWFNRV-UHFFFAOYSA-N 0.000 description 1
- BFDFHGPJXDFXBA-UHFFFAOYSA-N C12=CC=CC=C2C2=CC=CC=C2C1(C1=C2)C3=CC=CC=C3C1=CC=C2C(C=C1C2(C3=CC=CC=C3C3=CC=CC=C32)C2=C3)=CC=C1C2=CC=C3C(C=C12)=CC=C2C2=CC=CC=C2C21C1=CC=CC=C1C1=CC=CC=C21 Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1(C1=C2)C3=CC=CC=C3C1=CC=C2C(C=C1C2(C3=CC=CC=C3C3=CC=CC=C32)C2=C3)=CC=C1C2=CC=C3C(C=C12)=CC=C2C2=CC=CC=C2C21C1=CC=CC=C1C1=CC=CC=C21 BFDFHGPJXDFXBA-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 125000004556 carbazol-9-yl group Chemical group C1=CC=CC=2C3=CC=CC=C3N(C12)* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45576—Coaxial inlets for each gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
110,110’ 蒸着源、
110a 第1蒸着源、
110b,110b’ 第2蒸着源、
111a,111b,111b’ 冷却ブロック、
112a,112b,112b’ ルツボ、
113a,113b ヒータ、
115a, ホスト物質、
115b ドーパント物質、
120,120’ 蒸着源ノズル部、
121a,121a’ 第1蒸着源ノズル、
121b,121b’ 第2蒸着源ノズル、
130 遮断板アセンブリ、
131 遮断板、
132 遮断板フレーム、
135 連結部材、
150 パターニングスリットシート、
151 パターニングスリット、
155 フレーム、
201,202 蒸着源アセンブリ、
500 基板、
600 静電チャック。
Claims (18)
- 基板上に有機層を形成するための有機層蒸着装置において、
蒸着物質を放射する蒸着源と、
前記蒸着源の一側に配置され、複数個の蒸着源ノズルが形成される蒸着源ノズル部と、
前記蒸着源ノズル部と対向するように配置され、複数個のパターニングスリットが形成されるパターニングスリットシートと、を含み、
前記蒸着源は、第1蒸着源、及び前記第1蒸着源上にスタックされた形態に配列される第2蒸着源を含み、
前記蒸着源ノズル部は、前記基板に向かう第2蒸着源の一側に配置され、前記第2蒸着源から形成された複数個の第2蒸着源ノズルを含む第2蒸着源ノズル部と、前記第2蒸着源の一側に配置され、前記第1蒸着源から前記第2蒸着源を貫通して形成された第1蒸着源ノズルを含む第1蒸着源ノズル部と、を含み、
前記基板は、前記有機層蒸着装置と所定距離離隔されて配置され、前記有機層蒸着装置に対して相対的に移動可能であり、
前記第2蒸着源の温度は、前記第1蒸着源の温度より高く維持されることを特徴とする有機層蒸着装置。 - 前記基板に向かう前記第2蒸着源の一側に、前記第1蒸着源ノズル及び前記第2蒸着源ノズルが一列に配列され、前記第1蒸着源ノズルそれぞれは、前記第2蒸着源ノズルそれぞれと交互に配置されることを特徴とする請求項1に記載の有機層蒸着装置。
- 前記基板に向かう前記第2蒸着源の一側に、前記第1蒸着源ノズル及び前記第2蒸着源ノズルが一列に配列され、前記第1蒸着源ノズルそれぞれが、前記第2蒸着源ノズルそれぞれの内部に同芯型に配置されることを特徴とする請求項1または請求項2に記載の有機層蒸着装置。
- 前記有機層蒸着装置の前記パターニングスリットシートは、前記基板より小さく形成されることを特徴とする請求項1〜3のいずれか一項に記載の有機層蒸着装置。
- 前記蒸着源ノズル部には、第1方向に沿って、複数個の蒸着源ノズルが形成され、前記パターニングスリットシートには、前記第1方向に対して垂直である第2方向に沿って、複数個のパターニングスリットが形成されることを特徴とする請求項1〜4のいずれか一項に記載の有機層蒸着装置。
- 前記蒸着源、前記蒸着源ノズル部及び前記パターニングスリットシートは、連結部材によって結合されて一体に形成されることを特徴とする請求項1〜5のいずれか一項に記載の有機層蒸着装置。
- 前記連結部材は、前記蒸着物質の移動経路をガイドすることを特徴とする請求項6に記載の有機層蒸着装置。
- 前記連結部材は、前記蒸着源、前記蒸着源ノズル部及び前記パターニングスリットシート間の空間を、外部から密閉するように形成されることを特徴とする請求項6または7に記載の有機層蒸着装置。
- 前記蒸着源ノズル部には、第1方向に沿って、複数個の蒸着源ノズルが形成され、
前記パターニングスリットシートには、前記第1方向に沿って、複数個のパターニングスリットが形成され、
前記有機層蒸着装置は、前記蒸着源ノズル部と前記パターニングスリットシートとの間に、前記第1方向に沿って配置され、前記蒸着源ノズル部と、前記パターニングスリットシートとの間の空間を複数個の蒸着空間に区画する複数枚の遮断板を具備する遮断板アセンブリをさらに含むことを特徴とする請求項1〜8のいずれか一項に記載の有機層蒸着装置。 - 前記複数枚の遮断板それぞれは、前記第1方向と実質的に垂直である第2方向に沿って延びるように形成されたことを特徴とする請求項9に記載の有機層蒸着装置。
- 前記遮断板アセンブリは、複数枚の第1遮断板を具備する第1遮断板アセンブリと、複数枚の第2遮断板を具備する第2遮断板アセンブリと、を含むことを特徴とする請求項9または10に記載の有機層蒸着装置。
- 前記複数枚の第1遮断板及び前記複数枚の第2遮断板それぞれは、前記第1方向と実質的に垂直である第2方向に形成され、前記蒸着源ノズル部と、前記パターニングスリットシートとの間の空間を複数個の蒸着空間に区画することを特徴とする請求項11に記載の有機層蒸着装置。
- 前記有機層蒸着装置は、チャンバをさらに含み、
前記蒸着源ノズル部には、第1方向に沿って、複数個の蒸着源ノズルが形成され、前記パターニングスリットシートは、前記チャンバの内側に固定結合され、前記第1方向に対して垂直である第2方向に沿って、複数個のパターニングスリットが形成されることを特徴とする請求項1〜12のいずれか一項に記載の有機層蒸着装置。 - 前記基板が固定された静電チャックを第1方向に沿って移動させる第1循環部をさらに含むことを特徴とする請求項1〜13のいずれか一項に記載の有機層蒸着装置。
- 前記第1循環部は、
内部に前記蒸着源が収容されるフレームと、
前記フレームの内側面から突設され、前記パターニングスリットシートを支持するシート支持台と、を含むことを特徴とする請求項14に記載の有機層蒸着装置。 - 前記第1蒸着源はホスト物質を放射し、前記第2蒸着源はドーパント物質を放射することを特徴とする請求項1〜15のいずれか一項に記載の有機層蒸着装置。
- 前記第1蒸着源はドーパント物質を放射し、前記第2蒸着源はホスト物質を放射することを特徴とする請求項1〜15のいずれか一項に記載の有機層蒸着装置。
- 前記第1蒸着源及び第2蒸着源に備わった前記ホスト物質の量は、前記ドーパント物質の量よりも多いことを特徴とする請求項16または請求項17に記載の有機層蒸着装置。
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Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100994118B1 (ko) * | 2009-01-13 | 2010-11-15 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 및 그 제조 방법 |
JP5328726B2 (ja) | 2009-08-25 | 2013-10-30 | 三星ディスプレイ株式會社 | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 |
JP5677785B2 (ja) | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
KR101084184B1 (ko) | 2010-01-11 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR101193186B1 (ko) | 2010-02-01 | 2012-10-19 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101156441B1 (ko) | 2010-03-11 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
US8894458B2 (en) | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
KR101223723B1 (ko) | 2010-07-07 | 2013-01-18 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101738531B1 (ko) | 2010-10-22 | 2017-05-23 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101723506B1 (ko) | 2010-10-22 | 2017-04-19 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
KR20120045865A (ko) | 2010-11-01 | 2012-05-09 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
KR20120065789A (ko) | 2010-12-13 | 2012-06-21 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
KR101760897B1 (ko) | 2011-01-12 | 2017-07-25 | 삼성디스플레이 주식회사 | 증착원 및 이를 구비하는 유기막 증착 장치 |
KR101840654B1 (ko) | 2011-05-25 | 2018-03-22 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
KR101852517B1 (ko) | 2011-05-25 | 2018-04-27 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
KR101857249B1 (ko) | 2011-05-27 | 2018-05-14 | 삼성디스플레이 주식회사 | 패터닝 슬릿 시트 어셈블리, 유기막 증착 장치, 유기 발광 표시장치제조 방법 및 유기 발광 표시 장치 |
KR101826068B1 (ko) | 2011-07-04 | 2018-02-07 | 삼성디스플레이 주식회사 | 유기층 증착 장치 |
KR101942471B1 (ko) * | 2012-06-15 | 2019-01-28 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 유기 발광 표시장치의 제조방법 |
CN104099571A (zh) * | 2013-04-01 | 2014-10-15 | 上海和辉光电有限公司 | 蒸发源组件和薄膜沉积装置和薄膜沉积方法 |
TWI612689B (zh) | 2013-04-15 | 2018-01-21 | 半導體能源研究所股份有限公司 | 發光裝置 |
KR102098619B1 (ko) * | 2013-05-31 | 2020-05-25 | 삼성디스플레이 주식회사 | 도가니 장치 및 이를 포함하는 증착 장치 |
CN103681488A (zh) * | 2013-12-16 | 2014-03-26 | 合肥京东方光电科技有限公司 | 阵列基板及其制作方法,显示装置 |
US9812665B2 (en) * | 2015-09-02 | 2017-11-07 | Samsung Display Co., Ltd. | Display apparatus, and apparatus and method of manufacturing the same |
KR102654923B1 (ko) * | 2016-01-18 | 2024-04-08 | 삼성디스플레이 주식회사 | 표시 장치, 표시 장치의 제조장치 및 표시 장치의 제조방법 |
CN105483620B (zh) * | 2015-11-27 | 2018-03-30 | 京东方科技集团股份有限公司 | 喷嘴部件、蒸镀装置及制作有机发光二极管器件的方法 |
KR102524502B1 (ko) * | 2016-02-24 | 2023-04-24 | 주성엔지니어링(주) | 원료 처리 유닛 및 이를 포함하는 기판 처리 장치와, 이를 이용한 기판 처리 방법 |
KR102488260B1 (ko) * | 2016-03-07 | 2023-01-13 | 삼성디스플레이 주식회사 | 증착 장치 및 표시 장치의 제조 방법 |
CN107058973A (zh) * | 2017-03-10 | 2017-08-18 | 常州大学 | 大面积钙钛矿薄膜的制备设备 |
KR102120265B1 (ko) * | 2018-06-12 | 2020-06-08 | 셀로코아이엔티 주식회사 | 표시장치용 증착장비 및 이를 포함하는 제조시스템 |
KR20200045600A (ko) | 2018-10-22 | 2020-05-06 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 증착 방법 |
DE102021119435A1 (de) | 2021-07-27 | 2023-02-02 | VON ARDENNE Asset GmbH & Co. KG | Dampfverteilungsvorrichtung und Verdampfungsvorrichtung |
US20240200186A1 (en) * | 2022-12-20 | 2024-06-20 | Samsung Display Co., Ltd. | Deposition apparatus |
Family Cites Families (143)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3125279B2 (ja) | 1991-02-25 | 2001-01-15 | 東海カーボン株式会社 | 真空蒸着用黒鉛ルツボ |
JPH0598425A (ja) | 1991-10-04 | 1993-04-20 | Mitsubishi Electric Corp | 薄膜形成装置 |
FR2695943B1 (fr) | 1992-09-18 | 1994-10-14 | Alsthom Cge Alcatel | Procédé de dépôt en phase vapeur d'un film en verre fluoré sur un substrat. |
KR970054303A (ko) | 1995-12-27 | 1997-07-31 | 김광호 | Ccd 고체촬상소자의 제조방법 |
US6274198B1 (en) | 1997-02-24 | 2001-08-14 | Agere Systems Optoelectronics Guardian Corp. | Shadow mask deposition |
US6099649A (en) | 1997-12-23 | 2000-08-08 | Applied Materials, Inc. | Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal |
JP2000068054A (ja) | 1998-08-26 | 2000-03-03 | Hokuriku Electric Ind Co Ltd | El素子の製造方法 |
KR20000019254A (ko) | 1998-09-08 | 2000-04-06 | 석창길 | 화학 기상 증착 장치의 박막 두께 균일도 개선을 위한 장치 |
JP2001052862A (ja) | 1999-08-04 | 2001-02-23 | Hokuriku Electric Ind Co Ltd | 有機el素子の製造方法と装置 |
JP4187367B2 (ja) | 1999-09-28 | 2008-11-26 | 三洋電機株式会社 | 有機発光素子、その製造装置およびその製造方法 |
AU3331700A (en) | 1999-10-29 | 2001-05-08 | E. One Co., Ltd. | Scent diffusion apparatus and method thereof |
KR100302159B1 (ko) | 1999-10-29 | 2001-09-22 | 최중호 | 향발생장치 및 방법 |
TW490714B (en) | 1999-12-27 | 2002-06-11 | Semiconductor Energy Lab | Film formation apparatus and method for forming a film |
KR100653515B1 (ko) | 1999-12-30 | 2006-12-04 | 주식회사 팬택앤큐리텔 | 이동통신 시스템의 단말기 |
TW593622B (en) | 2000-05-19 | 2004-06-21 | Eastman Kodak Co | Method of using predoped materials for making an organic light-emitting device |
KR20020000201A (ko) | 2000-06-23 | 2002-01-05 | 최승락 | 레이저와 기상을 이용한 엘씨디 세정 방법 |
JP2002175878A (ja) | 2000-09-28 | 2002-06-21 | Sanyo Electric Co Ltd | 層の形成方法及びカラー発光装置の製造方法 |
KR100726132B1 (ko) | 2000-10-31 | 2007-06-12 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
US6468496B2 (en) | 2000-12-21 | 2002-10-22 | Arco Chemical Technology, L.P. | Process for producing hydrogen peroxide |
KR100625403B1 (ko) | 2000-12-22 | 2006-09-18 | 주식회사 하이닉스반도체 | 버추얼 채널 에스디램 |
KR100698033B1 (ko) | 2000-12-29 | 2007-03-23 | 엘지.필립스 엘시디 주식회사 | 유기 전계발광소자 및 그 제조 방법 |
KR100405080B1 (ko) | 2001-05-11 | 2003-11-10 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화방법. |
KR100463212B1 (ko) | 2001-05-19 | 2004-12-23 | 주식회사 아이엠티 | 건식 표면 클리닝 장치 |
JP2003003250A (ja) | 2001-06-22 | 2003-01-08 | Alps Electric Co Ltd | 真空蒸着重合装置及びこれを用いた有機被膜の形成方法 |
JP2003077662A (ja) | 2001-06-22 | 2003-03-14 | Junji Kido | 有機エレクトロルミネッセンス素子の製造方法および製造装置 |
JP3705237B2 (ja) | 2001-09-05 | 2005-10-12 | ソニー株式会社 | 有機電界発光素子を用いた表示装置の製造システムおよび製造方法 |
TW591202B (en) | 2001-10-26 | 2004-06-11 | Hermosa Thin Film Co Ltd | Dynamic film thickness control device/method and ITS coating method |
US20030101937A1 (en) | 2001-11-28 | 2003-06-05 | Eastman Kodak Company | Thermal physical vapor deposition source for making an organic light-emitting device |
US20030168013A1 (en) | 2002-03-08 | 2003-09-11 | Eastman Kodak Company | Elongated thermal physical vapor deposition source with plural apertures for making an organic light-emitting device |
JP2003297562A (ja) | 2002-03-29 | 2003-10-17 | Sanyo Electric Co Ltd | 蒸着方法 |
US6749906B2 (en) | 2002-04-25 | 2004-06-15 | Eastman Kodak Company | Thermal physical vapor deposition apparatus with detachable vapor source(s) and method |
US20030232563A1 (en) | 2002-05-09 | 2003-12-18 | Isao Kamiyama | Method and apparatus for manufacturing organic electroluminescence device, and system and method for manufacturing display unit using organic electroluminescence devices |
JP4292777B2 (ja) | 2002-06-17 | 2009-07-08 | ソニー株式会社 | 薄膜形成装置 |
KR100908232B1 (ko) | 2002-06-03 | 2009-07-20 | 삼성모바일디스플레이주식회사 | 유기 전자 발광 소자의 박막 증착용 마스크 프레임 조립체 |
JP4440563B2 (ja) | 2002-06-03 | 2010-03-24 | 三星モバイルディスプレイ株式會社 | 有機電子発光素子の薄膜蒸着用マスクフレーム組立体 |
JP2004043898A (ja) | 2002-07-12 | 2004-02-12 | Canon Electronics Inc | 蒸着用マスク、および有機エレクトロルミネセンス表示装置 |
KR100397196B1 (ko) | 2002-08-27 | 2003-09-13 | 에이엔 에스 주식회사 | 유기 반도체 장치의 유기물질 증착원 장치 및 그 방법 |
JP2004091858A (ja) | 2002-08-30 | 2004-03-25 | Toyota Industries Corp | 真空蒸着装置及び方法並びに蒸着膜応用製品の製造方法 |
JP2004103269A (ja) | 2002-09-05 | 2004-04-02 | Sanyo Electric Co Ltd | 有機el表示装置の製造方法 |
TWI252706B (en) | 2002-09-05 | 2006-04-01 | Sanyo Electric Co | Manufacturing method of organic electroluminescent display device |
JP2004103341A (ja) | 2002-09-09 | 2004-04-02 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
JP2004107764A (ja) | 2002-09-20 | 2004-04-08 | Ulvac Japan Ltd | 薄膜形成装置 |
JP4139186B2 (ja) | 2002-10-21 | 2008-08-27 | 東北パイオニア株式会社 | 真空蒸着装置 |
JP2004143521A (ja) | 2002-10-24 | 2004-05-20 | Sony Corp | 薄膜形成装置 |
KR100532657B1 (ko) | 2002-11-18 | 2005-12-02 | 주식회사 야스 | 다증발원을 이용한 동시증착에서 균일하게 혼합된 박막의증착을 위한 증발 영역조절장치 |
JP2004183044A (ja) | 2002-12-03 | 2004-07-02 | Seiko Epson Corp | マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器 |
JP2004199919A (ja) | 2002-12-17 | 2004-07-15 | Tohoku Pioneer Corp | 有機el表示パネルの製造方法 |
KR100646160B1 (ko) | 2002-12-31 | 2006-11-14 | 엘지.필립스 엘시디 주식회사 | 순차측면결정화를 위한 마스크 및 이를 이용한 실리콘결정화 방법 |
US20040144321A1 (en) | 2003-01-28 | 2004-07-29 | Eastman Kodak Company | Method of designing a thermal physical vapor deposition system |
JP3966292B2 (ja) | 2003-03-27 | 2007-08-29 | セイコーエプソン株式会社 | パターンの形成方法及びパターン形成装置、デバイスの製造方法、導電膜配線、電気光学装置、並びに電子機器 |
JP3915734B2 (ja) | 2003-05-12 | 2007-05-16 | ソニー株式会社 | 蒸着マスクおよびこれを用いた表示装置の製造方法、ならびに表示装置 |
JP2004349101A (ja) | 2003-05-22 | 2004-12-09 | Seiko Epson Corp | 膜形成方法、膜形成装置、有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置 |
KR100517255B1 (ko) | 2003-06-20 | 2005-09-27 | 주식회사 야스 | 유기 발광소자 박막 제작을 위한 선형 노즐 증발원 |
US6837939B1 (en) | 2003-07-22 | 2005-01-04 | Eastman Kodak Company | Thermal physical vapor deposition source using pellets of organic material for making OLED displays |
JP2005044592A (ja) | 2003-07-28 | 2005-02-17 | Toyota Industries Corp | 蒸着用マスク、この蒸着用マスクを用いた成膜方法及びこの蒸着用マスクを用いた成膜装置 |
EP2381011B1 (en) | 2003-08-04 | 2012-12-05 | LG Display Co., Ltd. | Evaporation source for evaporating an organic electroluminescent layer |
KR100656845B1 (ko) | 2003-08-14 | 2006-12-13 | 엘지전자 주식회사 | 유기 전계 발광층 증착용 증착원 |
US20050056535A1 (en) * | 2003-09-15 | 2005-03-17 | Makoto Nagashima | Apparatus for low temperature semiconductor fabrication |
KR20050028943A (ko) | 2003-09-17 | 2005-03-24 | 삼성전자주식회사 | 저압 화학기상증착 장치의 압력조절 시스템 |
US7339139B2 (en) | 2003-10-03 | 2008-03-04 | Darly Custom Technology, Inc. | Multi-layered radiant thermal evaporator and method of use |
KR20050039140A (ko) | 2003-10-24 | 2005-04-29 | 삼성전자주식회사 | 바라트론 센서 |
KR100520159B1 (ko) | 2003-11-12 | 2005-10-10 | 삼성전자주식회사 | 다중 안테나를 사용하는 직교주파수분할다중 시스템에서간섭신호 제거 장치 및 방법 |
KR200342433Y1 (ko) | 2003-12-04 | 2004-02-21 | 현대엘씨디주식회사 | 고압 분사형 유기물 증착 도가니 |
JP4441282B2 (ja) | 2004-02-02 | 2010-03-31 | 富士フイルム株式会社 | 蒸着マスク及び有機el表示デバイスの製造方法 |
JP2005235568A (ja) | 2004-02-19 | 2005-09-02 | Seiko Epson Corp | 蒸着装置及び有機el装置の製造方法 |
US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
US7238389B2 (en) * | 2004-03-22 | 2007-07-03 | Eastman Kodak Company | Vaporizing fluidized organic materials |
JP4366226B2 (ja) | 2004-03-30 | 2009-11-18 | 東北パイオニア株式会社 | 有機elパネルの製造方法、有機elパネルの成膜装置 |
JP2005293968A (ja) | 2004-03-31 | 2005-10-20 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
JP2005296737A (ja) | 2004-04-07 | 2005-10-27 | Mikuni Corp | ビートプレート |
JP4455937B2 (ja) | 2004-06-01 | 2010-04-21 | 東北パイオニア株式会社 | 成膜源、真空成膜装置、有機elパネルの製造方法 |
JP4545504B2 (ja) | 2004-07-15 | 2010-09-15 | 株式会社半導体エネルギー研究所 | 膜形成方法、発光装置の作製方法 |
KR20060008602A (ko) | 2004-07-21 | 2006-01-27 | 엘지전자 주식회사 | 유기 전계 발광층 증착 방법 |
KR100579406B1 (ko) | 2004-08-25 | 2006-05-12 | 삼성에스디아이 주식회사 | 수직 이동형 유기물 증착 장치 |
WO2006027830A1 (ja) | 2004-09-08 | 2006-03-16 | Toray Industries, Inc. | 有機電界発光装置およびその製造方法 |
KR101070539B1 (ko) | 2004-09-08 | 2011-10-05 | 도레이 카부시키가이샤 | 증착 마스크 및 이를 사용한 유기 전계 발광 장치의 제조 방법 |
KR100700641B1 (ko) | 2004-12-03 | 2007-03-27 | 삼성에스디아이 주식회사 | 레이저 조사 장치, 패터닝 방법 및 그를 이용한 레이저열전사 패터닝 방법과 이를 이용한 유기 전계 발광 소자의제조 방법 |
KR20060073367A (ko) | 2004-12-24 | 2006-06-28 | 엘지전자 주식회사 | 클리닝룸의 유기물 처리장치 |
KR100796148B1 (ko) | 2005-01-05 | 2008-01-21 | 삼성에스디아이 주식회사 | 수직이동형 증착시스템 |
KR100600357B1 (ko) | 2005-01-05 | 2006-07-18 | 삼성에스디아이 주식회사 | 증착시스템용 증착원의 구동축 밀폐장치 및 이를 구비한증착시스템 |
KR100645719B1 (ko) | 2005-01-05 | 2006-11-14 | 삼성에스디아이 주식회사 | 물질증착용 증착원 및 이를 구비한 증착장치 |
JP4384109B2 (ja) | 2005-01-05 | 2009-12-16 | 三星モバイルディスプレイ株式會社 | 蒸着システム用蒸着源の駆動軸及びこれを具備した蒸着システム |
KR101200693B1 (ko) | 2005-01-11 | 2012-11-12 | 김명희 | 대면적 유기박막 제작용 선형 다점 도가니 장치 |
KR20060083510A (ko) | 2005-01-17 | 2006-07-21 | 삼성전자주식회사 | 결함성 부산물들을 제거하는 포토마스크 장비 |
JP4440837B2 (ja) | 2005-01-31 | 2010-03-24 | 三星モバイルディスプレイ株式會社 | 蒸発源及びこれを採用した蒸着装置 |
KR100703427B1 (ko) | 2005-04-15 | 2007-04-03 | 삼성에스디아이 주식회사 | 증발원 및 이를 채용한 증착장치 |
US7918940B2 (en) | 2005-02-07 | 2011-04-05 | Semes Co., Ltd. | Apparatus for processing substrate |
KR100719314B1 (ko) | 2005-03-31 | 2007-05-17 | 세메스 주식회사 | 기판 이송 장치 및 기판 상에 유기 박막을 증착하는 장치 |
KR100687007B1 (ko) | 2005-03-22 | 2007-02-26 | 세메스 주식회사 | 유기전계 발광 소자 제조에 사용되는 유기 박박 증착 장치 |
JP2006275433A (ja) | 2005-03-29 | 2006-10-12 | National Institute Of Advanced Industrial & Technology | 吸収式小型冷却及び冷凍装置 |
KR100637714B1 (ko) | 2005-03-31 | 2006-10-25 | 세메스 주식회사 | 기판 처리 장치 |
KR100773249B1 (ko) | 2005-04-18 | 2007-11-05 | 엘지전자 주식회사 | 유기 전계 발광층 형성용 마스크 |
KR100797787B1 (ko) | 2005-06-03 | 2008-01-24 | 주식회사 아이엠티 | 레이저를 이용한 건식세정시스템 |
JP4655812B2 (ja) | 2005-08-08 | 2011-03-23 | カシオ計算機株式会社 | 楽音発生装置、及びプログラム |
KR100711885B1 (ko) | 2005-08-31 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 증착원 및 이의 가열원 제어방법 |
KR20070035796A (ko) | 2005-09-28 | 2007-04-02 | 엘지전자 주식회사 | 유기 전계발광 표시소자의 제조장치 |
JP4767000B2 (ja) * | 2005-11-28 | 2011-09-07 | 日立造船株式会社 | 真空蒸着装置 |
KR100696547B1 (ko) | 2005-12-09 | 2007-03-19 | 삼성에스디아이 주식회사 | 증착 방법 |
JP5064810B2 (ja) | 2006-01-27 | 2012-10-31 | キヤノン株式会社 | 蒸着装置および蒸着方法 |
KR20070080635A (ko) | 2006-02-08 | 2007-08-13 | 주식회사 아바코 | 유기물증발 보트 |
KR20070084973A (ko) | 2006-02-22 | 2007-08-27 | 삼성전기주식회사 | 고출력 반도체 레이저소자 |
KR20070098122A (ko) | 2006-03-31 | 2007-10-05 | 삼성전자주식회사 | 반도체 제조설비 |
KR20070105595A (ko) | 2006-04-27 | 2007-10-31 | 두산메카텍 주식회사 | 유기박막 증착장치 |
KR100770653B1 (ko) | 2006-05-25 | 2007-10-29 | 에이엔 에스 주식회사 | 박막형성용 증착장치 |
KR101248004B1 (ko) | 2006-06-29 | 2013-03-27 | 엘지디스플레이 주식회사 | 유기전계 발광소자의 증착 스템과, 이를 이용한 유기전계발광소자의 제조방법 |
KR100800125B1 (ko) | 2006-06-30 | 2008-01-31 | 세메스 주식회사 | 유기발광소자 증착장비의 소스셔터 및 기판 제어방법 |
KR100980729B1 (ko) | 2006-07-03 | 2010-09-07 | 주식회사 야스 | 증착 공정용 다중 노즐 증발원 |
KR100723627B1 (ko) | 2006-08-01 | 2007-06-04 | 세메스 주식회사 | 유기 박막 증착 장치의 증발원 |
KR100815265B1 (ko) | 2006-08-28 | 2008-03-19 | 주식회사 대우일렉트로닉스 | 마이크로 히터 및 도가니 제조 방법, 그리고 이들을 구비한유기물 진공 증착 장치 |
JP4971723B2 (ja) | 2006-08-29 | 2012-07-11 | キヤノン株式会社 | 有機発光表示装置の製造方法 |
US7322248B1 (en) | 2006-08-29 | 2008-01-29 | Eastman Kodak Company | Pressure gauge for organic materials |
US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
JP5063969B2 (ja) | 2006-09-29 | 2012-10-31 | 東京エレクトロン株式会社 | 蒸着装置、蒸着装置の制御装置、蒸着装置の制御方法および蒸着装置の使用方法 |
KR100823508B1 (ko) | 2006-10-19 | 2008-04-21 | 삼성에스디아이 주식회사 | 증발원 및 이를 구비한 증착 장치 |
KR100839380B1 (ko) | 2006-10-30 | 2008-06-19 | 삼성에스디아이 주식회사 | 유기 발광 표시 장치의 진공 증착 장치 |
JP4768584B2 (ja) | 2006-11-16 | 2011-09-07 | 財団法人山形県産業技術振興機構 | 蒸発源およびこれを用いた真空蒸着装置 |
US20080131587A1 (en) | 2006-11-30 | 2008-06-05 | Boroson Michael L | Depositing organic material onto an oled substrate |
KR20080060400A (ko) | 2006-12-27 | 2008-07-02 | 엘지디스플레이 주식회사 | 어레이 기판의 제조 방법 및 이를 이용한 유기 광 발생장치의 제조 방법 |
KR20080061132A (ko) | 2006-12-28 | 2008-07-02 | 엘지디스플레이 주식회사 | 유기막 증착 장치 |
KR20080062212A (ko) | 2006-12-29 | 2008-07-03 | 세메스 주식회사 | 유기 박막 증착 장치 |
JP4909152B2 (ja) | 2007-03-30 | 2012-04-04 | キヤノン株式会社 | 蒸着装置及び蒸着方法 |
JP5081516B2 (ja) | 2007-07-12 | 2012-11-28 | 株式会社ジャパンディスプレイイースト | 蒸着方法および蒸着装置 |
JP5282038B2 (ja) | 2007-09-10 | 2013-09-04 | 株式会社アルバック | 蒸着装置 |
JP5201932B2 (ja) | 2007-09-10 | 2013-06-05 | 株式会社アルバック | 供給装置、及び有機蒸着装置 |
KR20090038733A (ko) | 2007-10-16 | 2009-04-21 | 주식회사 실트론 | Soi 웨이퍼의 표면 거칠기 개선을 위한 열처리 방법 및이를 위한 열처리 장치 |
KR100790718B1 (ko) | 2007-11-05 | 2008-01-02 | 삼성전기주식회사 | 고출력 반도체 레이저소자 |
KR100928136B1 (ko) | 2007-11-09 | 2009-11-25 | 삼성모바일디스플레이주식회사 | 유기물 선형 증착 장치 |
JP5046882B2 (ja) | 2007-11-21 | 2012-10-10 | 三菱重工業株式会社 | インライン式成膜装置 |
KR100994114B1 (ko) | 2008-03-11 | 2010-11-12 | 삼성모바일디스플레이주식회사 | 박막 형성 방법 |
KR101108151B1 (ko) | 2009-04-30 | 2012-01-31 | 삼성모바일디스플레이주식회사 | 증착 장치 |
TWI472639B (zh) | 2009-05-22 | 2015-02-11 | Samsung Display Co Ltd | 薄膜沉積設備 |
TWI475124B (zh) | 2009-05-22 | 2015-03-01 | Samsung Display Co Ltd | 薄膜沉積設備 |
KR101074790B1 (ko) | 2009-05-22 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR101084168B1 (ko) | 2009-06-12 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR20100130786A (ko) | 2009-06-04 | 2010-12-14 | 삼성모바일디스플레이주식회사 | 증착 장치 및 이를 이용한 유기 발광 소자의 제조방법 |
KR20110014442A (ko) * | 2009-08-05 | 2011-02-11 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
KR101127578B1 (ko) * | 2009-08-24 | 2012-03-23 | 삼성모바일디스플레이주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
JP5328726B2 (ja) * | 2009-08-25 | 2013-10-30 | 三星ディスプレイ株式會社 | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 |
KR101174877B1 (ko) | 2009-08-27 | 2012-08-17 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 이를 이용한 유기 발광 표시장치의 제조 방법 |
JP5677785B2 (ja) * | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
US20110052795A1 (en) * | 2009-09-01 | 2011-03-03 | Samsung Mobile Display Co., Ltd. | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
KR101084184B1 (ko) * | 2010-01-11 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR101760897B1 (ko) | 2011-01-12 | 2017-07-25 | 삼성디스플레이 주식회사 | 증착원 및 이를 구비하는 유기막 증착 장치 |
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US20130032829A1 (en) | 2013-02-07 |
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