JP6025287B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6025287B2
JP6025287B2 JP2012226351A JP2012226351A JP6025287B2 JP 6025287 B2 JP6025287 B2 JP 6025287B2 JP 2012226351 A JP2012226351 A JP 2012226351A JP 2012226351 A JP2012226351 A JP 2012226351A JP 6025287 B2 JP6025287 B2 JP 6025287B2
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JP
Japan
Prior art keywords
film
insulating film
oxide semiconductor
transistor
semiconductor film
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Active
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JP2012226351A
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English (en)
Japanese (ja)
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JP2013102150A (ja
JP2013102150A5 (enExample
Inventor
本田　達也
達也 本田
将志 津吹
将志 津吹
野中　裕介
裕介 野中
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012226351A priority Critical patent/JP6025287B2/ja
Publication of JP2013102150A publication Critical patent/JP2013102150A/ja
Publication of JP2013102150A5 publication Critical patent/JP2013102150A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Volatile Memory (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2012226351A 2011-10-14 2012-10-11 半導体装置 Active JP6025287B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012226351A JP6025287B2 (ja) 2011-10-14 2012-10-11 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011227198 2011-10-14
JP2011227198 2011-10-14
JP2012226351A JP6025287B2 (ja) 2011-10-14 2012-10-11 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016199606A Division JP6268253B2 (ja) 2011-10-14 2016-10-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2013102150A JP2013102150A (ja) 2013-05-23
JP2013102150A5 JP2013102150A5 (enExample) 2015-11-12
JP6025287B2 true JP6025287B2 (ja) 2016-11-16

Family

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Family Applications (8)

Application Number Title Priority Date Filing Date
JP2012226351A Active JP6025287B2 (ja) 2011-10-14 2012-10-11 半導体装置
JP2016199606A Expired - Fee Related JP6268253B2 (ja) 2011-10-14 2016-10-10 半導体装置
JP2017247704A Withdrawn JP2018050081A (ja) 2011-10-14 2017-12-25 半導体装置
JP2019192566A Active JP6811825B2 (ja) 2011-10-14 2019-10-23 半導体装置
JP2020207540A Withdrawn JP2021044587A (ja) 2011-10-14 2020-12-15 半導体装置
JP2022144626A Active JP7412493B2 (ja) 2011-10-14 2022-09-12 半導体装置
JP2023219723A Active JP7707272B2 (ja) 2011-10-14 2023-12-26 半導体装置
JP2025112525A Pending JP2025138817A (ja) 2011-10-14 2025-07-02 半導体装置

Family Applications After (7)

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JP2016199606A Expired - Fee Related JP6268253B2 (ja) 2011-10-14 2016-10-10 半導体装置
JP2017247704A Withdrawn JP2018050081A (ja) 2011-10-14 2017-12-25 半導体装置
JP2019192566A Active JP6811825B2 (ja) 2011-10-14 2019-10-23 半導体装置
JP2020207540A Withdrawn JP2021044587A (ja) 2011-10-14 2020-12-15 半導体装置
JP2022144626A Active JP7412493B2 (ja) 2011-10-14 2022-09-12 半導体装置
JP2023219723A Active JP7707272B2 (ja) 2011-10-14 2023-12-26 半導体装置
JP2025112525A Pending JP2025138817A (ja) 2011-10-14 2025-07-02 半導体装置

Country Status (3)

Country Link
US (1) US9218966B2 (enExample)
JP (8) JP6025287B2 (enExample)
KR (3) KR20130040706A (enExample)

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JP6082562B2 (ja) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 半導体装置
KR20130046357A (ko) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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US9773915B2 (en) * 2013-06-11 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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JP2016027597A (ja) * 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
US9929279B2 (en) * 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2015182000A1 (en) 2014-05-30 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
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JP6618779B2 (ja) * 2014-11-28 2019-12-11 株式会社半導体エネルギー研究所 半導体装置
JP6500202B2 (ja) * 2014-12-08 2019-04-17 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及び薄膜トランジスタの製造方法
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CN121040235A (zh) * 2023-05-19 2025-11-28 株式会社半导体能源研究所 半导体装置

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US20130092944A1 (en) 2013-04-18
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JP2022171784A (ja) 2022-11-11
JP2021044587A (ja) 2021-03-18
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JP2018050081A (ja) 2018-03-29
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JP2020017759A (ja) 2020-01-30
JP2024036335A (ja) 2024-03-15
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US9218966B2 (en) 2015-12-22
KR20130040706A (ko) 2013-04-24

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