JP6088312B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6088312B2 JP6088312B2 JP2013067798A JP2013067798A JP6088312B2 JP 6088312 B2 JP6088312 B2 JP 6088312B2 JP 2013067798 A JP2013067798 A JP 2013067798A JP 2013067798 A JP2013067798 A JP 2013067798A JP 6088312 B2 JP6088312 B2 JP 6088312B2
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- Prior art keywords
- film
- oxide semiconductor
- insulating film
- region
- transistor
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- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
本実施の形態では、酸化物半導体薄膜の酸素欠損の発生を抑制できるトップゲート構造の半導体素子の構造を、図1を用いて説明すると共に、当該半導体素子の作製方法を図2および図3を用いて説明する。
本実施の形態に記載の半導体素子の構造を、図1を用いて説明する。なお、図1(A)は半導体素子50の上面図、図1(B)は図1(A)の一点鎖線X1−X2の断面図である。
次に、図2および図3を用いて、図1に示す半導体素子50の作製方法の一例について説明する。
本実施の形態では、酸化物半導体薄膜の酸素欠損の発生を抑制できるトップゲート構造の半導体素子の構造を、図5を用いて説明すると共に、当該半導体素子の作製方法を図6および図7を用いて説明する。
本実施の形態に記載の半導体素子の構造を、図5を用いて説明する。なお、図5(A)は半導体素子150の上面図、図5(B)は図5(A)の一点鎖線A1−A2の断面図である。
次に、図6を用いて、図5に示す半導体素子150の作製方法の一例について説明する。
本実施の形態では、実施の形態2とは異なるトップゲート構造の半導体素子の構造を、図8を用いて説明すると共に、当該半導体素子の作製方法を、図9を用いて説明する。
本実施の形態に記載の半導体素子の構造を、図8を用いて説明する。なお、図8(A)は半導体素子450の上面図、図8(B)は図8(A)の一点鎖線B1−B2の断面図である。
次に、図9を用いて、図8に示す半導体素子450の作製方法の一例について説明する。
本実施の形態では、上述実施の形態とは異なるトップゲート構造の半導体素子の構造を、図10を用いて説明すると共に、当該半導体素子の作製方法を、図11を用いて説明する。
本実施の形態に記載の半導体素子の構造を、図10を用いて説明する。なお、図10(A)は半導体素子650の上面図、図10(B)は図10(A)の一点鎖線C1−C2の断面図である。
次に、図11を用いて、図10に示す半導体素子650の作製方法の一例について説明する。
本実施の形態では、実施の形態2乃至実施の形態4に示す半導体素子を使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置の一例を、図面を用いて説明する。
本実施の形態においては、実施の形態2乃至実施の形態4に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置について、実施の形態6に示した構成と異なる構成を図13及び図14を用いて説明を行う。
本明細書等に開示する半導体素子は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した半導体装置を具備する電子機器の例について説明する。
100 基板
102 下地膜
104 酸化物半導体膜
104a 低抵抗領域
104b チャネル形成領域
104c オフセット領域
106a 導電膜
106b 導電膜
107 絶縁膜
110 ゲート絶縁膜
111 窒化領域
112 ゲート電極
113 不純物イオン
114 窒化領域
115 導電膜
116 絶縁膜
116a 絶縁膜
116b 絶縁膜
118 配線
150 半導体素子
450 半導体素子
650 半導体素子
1400 基板
1408 ゲート絶縁膜
1410 ゲート電極
1416 チャネル形成領域
1420 不純物領域
1424 金属間化合物領域
1428 絶縁膜
1430 絶縁膜
1442 絶縁膜
1444 絶縁膜
1446 配線
1447 導電膜
1451 絶縁膜
1452 下地膜
1461 トランジスタ
1462 トランジスタ
1464 容量素子
1466 電極
1467 誘電膜
1468 絶縁膜
1762 トランジスタ
1764 容量素子
1800 基板
1850 メモリセル
1851 メモリセルアレイ
1851a メモリセルアレイ
1851b メモリセルアレイ
1853 周辺回路
2501 筐体
2502 筐体
2503a 第1の表示部
2503b 第2の表示部
2504 選択ボタン
2505 キーボード
2520 電子書籍
2521 筐体
2522 軸部
2523 筐体
2525 表示部
2526 電源
2527 表示部
2528 操作キー
2529 スピーカー
2530 筐体
2531 ボタン
2532 マイクロフォン
2533 表示部
2534 スピーカー
2535 カメラ
2536 外部接続端子
2541 本体
2542 表示部
2543 操作スイッチ
2544 バッテリー
2550 テレビジョン装置
2551 筐体
2553 表示部
2555 スタンド
Claims (3)
- 酸化物半導体膜と、
前記酸化物半導体膜上の、ゲート絶縁膜と、
前記ゲート絶縁膜上の、ゲート電極と、を有し、
前記ゲート電極の側端部は、前記ゲート絶縁膜の側端部と一致し、
前記ゲート絶縁膜は、前記側端部を含む第1の領域と、前記側端部を含まない第2の領域とを有し、
前記第1の領域の窒素濃度は、前記第2の領域の窒素濃度より高く、
前記酸化物半導体膜は、前記ゲート絶縁膜と重なる第3の領域と、ソース電極と重なる第4の領域と、ドレイン電極と重なる第5の領域と、前記ゲート絶縁膜、前記ソース電極、及び前記ドレイン電極と重ならない第6の領域と、を有し、
前記第6の領域の窒素濃度は、前記第3の領域乃至第5の領域の窒素濃度より高いことを特徴とする半導体装置。 - 請求項1において、
前記第6の領域において、前記窒素濃度は、前記ゲート電極側に向かって高いことを特徴とする半導体装置。 - 請求項1又は請求項2において、
前記ソース電極は、前記第4の領域の側端部を覆い、
前記ドレイン電極は、前記第5の領域の側端部を覆うことを特徴とする半導体装置。
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JP2013229588A5 JP2013229588A5 (ja) | 2016-02-04 |
JP6088312B2 true JP6088312B2 (ja) | 2017-03-01 |
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