JP5553561B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5553561B2 JP5553561B2 JP2009209050A JP2009209050A JP5553561B2 JP 5553561 B2 JP5553561 B2 JP 5553561B2 JP 2009209050 A JP2009209050 A JP 2009209050A JP 2009209050 A JP2009209050 A JP 2009209050A JP 5553561 B2 JP5553561 B2 JP 5553561B2
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- thin film
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- transistor
- electrode
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Description
本形態は、画素部とその周辺に非線形素子を含む保護回路が形成された表示装置の一態様を図面を参照して説明する。
本実施の形態は、実施の形態1において図4(A)に示した保護回路の作製工程の一態様を図6及び図7を参照して説明する。図6及び図7は、図4(A)中のQ1−Q2切断線に対応した断面図を表している。
本実施の形態では、本発明の一態様を適用した表示装置として、保護回路と画素部に配置するTFTを同一基板上に有する電子ペーパーの例を示す。
本実施の形態では、本発明の一態様の半導体装置の一例である表示装置において、同一基板上に少なくとも保護回路と、駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について以下に説明する。
本発明の一態様の非線形素子と共に薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、本発明の一態様の非線形素子と薄膜トランジスタを駆動回路の一部または全体に用い、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、本発明の一態様の表示装置として発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を例示する。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
本発明の一態様の表示装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図22、図23に示す。
本発明の一態様に係る半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
11 走査線入力端子
12 信号線入力端子
13 走査線
14 信号線
15 ゲート電極
16 ゲート電極
17 画素部
18 画素
19 画素トランジスタ
20 保持容量部
21 画素電極
22 容量線
23 共通端子
24 保護回路
25 保護回路
26 保護回路
27 容量バス線
28 共通配線
29 共通配線
30 非線形素子
30a 非線形素子
30b 非線形素子
31 非線形素子
31a 非線形素子
31b 非線形素子
36 酸化物半導体層
37 ゲート絶縁層
38 配線層
39 配線層
40 酸化物半導体層
41 導電層
42 層間絶縁層
43 コンタクトホール
44 配線層
100 基板
101 ゲート電極
102 ゲート絶縁層
103 酸化物半導体層
105a ソース電極層
105b ドレイン電極層
106a ソース領域
106b ドレイン領域
107 保護絶縁膜
108 走査線
125 コンタクトホール
126 コンタクトホール
128 配線層
580 基板
581 薄膜トランジスタ
583 層間絶縁層
584 保護膜
585 絶縁層
587 電極層
588 電極層
589 球形粒子
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
596 基板
650 走査線
651 共通配線
730a 非線形素子
730b 非線形素子
730c 非線形素子
740a 非線形素子
740b 非線形素子
740c 非線形素子
740d 非線形素子
1000 携帯電話機
1001 筐体
1002 表示部
1003 操作ボタン
1004 外部接続ポート
1005 スピーカ
1006 マイク
2600 TFT基板
2601 対向基板
2602 シール材
2603 画素部
2604 表示素子
2605 着色層
2606 偏光板
2607 偏光板
2608 配線回路部
2609 フレキシブル配線基板
2610 冷陰極管
2611 反射板
2612 回路基板
2613 拡散板
2631 ポスター
2632 車内広告
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 薄膜トランジスタ
4011 薄膜トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4033 絶縁層
4035 スペーサ
4501 基板
4502 画素部
4503a 信号線駆動回路
4503b 信号線駆動回路
4504a 走査線駆動回路
4504b 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4518b FPC
4519 異方性導電膜
4520 隔壁
5300 基板
5301 画素部
5302 走査線駆動回路
5303 信号線駆動回路
5400 基板
5401 画素部
5402 走査線駆動回路
5403 信号線駆動回路
5404 走査線駆動回路
5501 配線
5502 配線
5503 配線
5504 配線
5505 配線
5506 配線
5543 ノード
5544 ノード
5571 薄膜トランジスタ
5572 薄膜トランジスタ
5573 薄膜トランジスタ
5574 薄膜トランジスタ
5575 薄膜トランジスタ
5576 薄膜トランジスタ
5577 薄膜トランジスタ
5578 薄膜トランジスタ
5601 ドライバIC
5602 スイッチ群
5603a 薄膜トランジスタ
5603b 薄膜トランジスタ
5603c 薄膜トランジスタ
5611 配線
5612 配線
5613 配線
5621 配線
5701 フリップフロップ
5703a タイミング
5703b タイミング
5703c タイミング
5711 配線
5712 配線
5713 配線
5714 配線
5715 配線
5716 配線
5717 配線
5721 信号
5803a タイミング
5803b タイミング
5803c タイミング
5821 信号
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 駆動用TFT
7002 発光素子
7003 陰極
7004 発光層
7005 陽極
7011 駆動用TFT
7012 発光素子
7013 陰極
7014 発光層
7015 陽極
7016 遮蔽膜
7017 導電膜
7021 駆動用TFT
7022 発光素子
7023 陰極
7024 発光層
7025 陽極
7027 導電膜
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 操作キー
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
Claims (2)
- 第1乃至第4の酸化物半導体層と、第1乃至第10の導電層と、を有し、
前記第1の酸化物半導体層は、第1のトランジスタのチャネル形成領域を有し、
前記第2の酸化物半導体層は、第2のトランジスタのチャネル形成領域を有し、
前記第3の酸化物半導体層は、第3のトランジスタのチャネル形成領域を有し、
前記第4の酸化物半導体層は、第4のトランジスタのチャネル形成領域を有し、
前記第1の導電層は、前記第1のトランジスタのゲート電極として機能する領域と、前記第2のトランジスタのゲート電極として機能する領域と、を有し、
前記第2の導電層は、前記第3のトランジスタのゲート電極として機能する領域を有し、
前記第3の導電層は、前記第4のトランジスタのゲート電極として機能する領域を有し、
前記第4の導電層は、前記第1のトランジスタのソース電極又はドレイン電極の一方として機能する領域と、前記第2のトランジスタのソース電極又はドレイン電極の一方として機能する領域と、前記第3のトランジスタのソース電極又はドレイン電極の一方として機能する領域と、前記第4のトランジスタのソース電極又はドレイン電極の一方として機能する領域と、を有し、
前記第5の導電層は、前記第1のトランジスタのソース電極又はドレイン電極の他方として機能する領域と、前記第3のトランジスタのソース電極又はドレイン電極の他方として機能する領域と、を有し、
前記第6の導電層は、前記第2のトランジスタのソース電極又はドレイン電極の他方として機能する領域と、前記第4のトランジスタのソース電極又はドレイン電極の他方として機能する領域と、を有し、
前記第7の導電層は、前記第1の導電層と接する領域と、前記第5の導電層と接する領域と、を有し、
前記第8の導電層は、前記第2の導電層と接する領域と、前記第4の導電層と接する領域と、を有し、
前記第9の導電層は、前記第1の導電層と接する領域と、前記第6の導電層と接する領域と、を有し、
前記第10の導電層は、前記第3の導電層と接する領域と、前記第4の導電層と接する領域と、を有することを特徴とする半導体装置。 - 第1乃至第4の酸化物半導体層と、第1乃至第6の導電層と、を有し、
前記第1の酸化物半導体層は、第1のトランジスタのチャネル形成領域を有し、
前記第2の酸化物半導体層は、第2のトランジスタのチャネル形成領域を有し、
前記第3の酸化物半導体層は、第3のトランジスタのチャネル形成領域を有し、
前記第4の酸化物半導体層は、第4のトランジスタのチャネル形成領域を有し、
前記第1の導電層は、前記第1のトランジスタのゲート電極として機能する領域と、前記第2のトランジスタのゲート電極として機能する領域と、を有し、
前記第2の導電層は、前記第3のトランジスタのゲート電極として機能する領域を有し、
前記第3の導電層は、前記第4のトランジスタのゲート電極として機能する領域を有し、
前記第4の導電層は、前記第1のトランジスタのソース電極又はドレイン電極の一方として機能する領域と、前記第2のトランジスタのソース電極又はドレイン電極の一方として機能する領域と、前記第3のトランジスタのソース電極又はドレイン電極の一方として機能する領域と、前記第4のトランジスタのソース電極又はドレイン電極の一方として機能する領域と、を有し、
前記第5の導電層は、前記第1のトランジスタのソース電極又はドレイン電極の他方として機能する領域と、前記第3のトランジスタのソース電極又はドレイン電極の他方として機能する領域と、を有し、
前記第6の導電層は、前記第2のトランジスタのソース電極又はドレイン電極の他方として機能する領域と、前記第4のトランジスタのソース電極又はドレイン電極の他方として機能する領域と、を有し、
前記第1の導電層は、前記第5の導電層と電気的に接続され、
前記第2の導電層は、前記第4の導電層と電気的に接続され、
前記第1の導電層は、前記第6の導電層と電気的に接続され、
前記第3の導電層は、前記第4の導電層と電気的に接続されることを特徴とする半導体装置。
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JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
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JP2016028427A (ja) | 2016-02-25 |
KR20160087918A (ko) | 2016-07-22 |
JP2017054126A (ja) | 2017-03-16 |
KR20170036141A (ko) | 2017-03-31 |
JP2022008401A (ja) | 2022-01-13 |
JP6946484B2 (ja) | 2021-10-06 |
JP6010200B2 (ja) | 2016-10-19 |
KR20170097235A (ko) | 2017-08-25 |
JP2019049718A (ja) | 2019-03-28 |
US20220231056A1 (en) | 2022-07-21 |
JP2023129746A (ja) | 2023-09-15 |
JP2020074425A (ja) | 2020-05-14 |
JP2014222342A (ja) | 2014-11-27 |
JP6408529B2 (ja) | 2018-10-17 |
KR20110081976A (ko) | 2011-07-15 |
US20140264329A1 (en) | 2014-09-18 |
TWI476905B (zh) | 2015-03-11 |
US20190172847A1 (en) | 2019-06-06 |
US20100065839A1 (en) | 2010-03-18 |
JP5801447B2 (ja) | 2015-10-28 |
TW201017871A (en) | 2010-05-01 |
JP2010092037A (ja) | 2010-04-22 |
KR101829673B1 (ko) | 2018-02-19 |
JP6730393B2 (ja) | 2020-07-29 |
WO2010029865A1 (en) | 2010-03-18 |
KR101644406B1 (ko) | 2016-08-01 |
US10236303B2 (en) | 2019-03-19 |
US8941114B2 (en) | 2015-01-27 |
KR101722913B1 (ko) | 2017-04-05 |
KR101772377B1 (ko) | 2017-08-29 |
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