JP5364368B2 - 基板の製造方法 - Google Patents

基板の製造方法 Download PDF

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Publication number
JP5364368B2
JP5364368B2 JP2008507893A JP2008507893A JP5364368B2 JP 5364368 B2 JP5364368 B2 JP 5364368B2 JP 2008507893 A JP2008507893 A JP 2008507893A JP 2008507893 A JP2008507893 A JP 2008507893A JP 5364368 B2 JP5364368 B2 JP 5364368B2
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layer
substrate
gan
thin
handle substrate
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JP2008507893A
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JP2008538658A (ja
JP2008538658A5 (https=
Inventor
ピンニングトン，トーマス，ヘンリー
ザーラー，ジェイムズ，エム
パク，ヨン‐ベ
ツァイ，チャールズ
ラドウス，コリン
アトウォーター，ハリー，ジュニア，エイ
オルソン，ショーン
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エイオーネックス・テクノロジーズ・インコーポレイテッド
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP2008507893A 2005-04-21 2006-04-21 基板の製造方法 Expired - Lifetime JP5364368B2 (ja)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
US67336705P 2005-04-21 2005-04-21
US60/673,367 2005-04-21
US68282305P 2005-05-20 2005-05-20
US60/682,823 2005-05-20
US70035705P 2005-07-19 2005-07-19
US60/700,357 2005-07-19
US70388905P 2005-08-01 2005-08-01
US60/703,889 2005-08-01
US71141605P 2005-08-26 2005-08-26
US60/711,416 2005-08-26
US75130805P 2005-12-19 2005-12-19
US60/751,308 2005-12-19
US76249006P 2006-01-27 2006-01-27
US60/762,490 2006-01-27
PCT/US2006/015003 WO2006116030A2 (en) 2005-04-21 2006-04-21 Bonded intermediate substrate and method of making same

Publications (3)

Publication Number Publication Date
JP2008538658A JP2008538658A (ja) 2008-10-30
JP2008538658A5 JP2008538658A5 (https=) 2009-09-03
JP5364368B2 true JP5364368B2 (ja) 2013-12-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008507893A Expired - Lifetime JP5364368B2 (ja) 2005-04-21 2006-04-21 基板の製造方法

Country Status (4)

Country Link
US (1) US8101498B2 (https=)
JP (1) JP5364368B2 (https=)
TW (1) TW200707799A (https=)
WO (1) WO2006116030A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11661670B2 (en) * 2020-01-16 2023-05-30 SLT Technologies, Inc High quality group-III metal nitride seed crystal and method of making

Families Citing this family (262)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US9142734B2 (en) * 2003-02-26 2015-09-22 Cree, Inc. Composite white light source and method for fabricating
CN100502062C (zh) 2003-04-30 2009-06-17 美商克立股份有限公司 具有小型光学元件的高功率发光器封装
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US7846757B2 (en) * 2005-06-01 2010-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
CN102683391B (zh) 2004-06-04 2015-11-18 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法和设备
US7799699B2 (en) * 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7244630B2 (en) * 2005-04-05 2007-07-17 Philips Lumileds Lighting Company, Llc A1InGaP LED having reduced temperature dependence
WO2006116030A2 (en) 2005-04-21 2006-11-02 Aonex Technologies, Inc. Bonded intermediate substrate and method of making same
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
WO2007025062A2 (en) * 2005-08-25 2007-03-01 Wakonda Technologies, Inc. Photovoltaic template
EP1960570A2 (en) 2005-11-28 2008-08-27 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
JP5281408B2 (ja) 2005-12-02 2013-09-04 クリスタル・イズ，インコーポレイテッド ドープされた窒化アルミニウム結晶及びそれを製造する方法
KR100661602B1 (ko) * 2005-12-09 2006-12-26 삼성전기주식회사 수직 구조 질화갈륨계 ｌｅｄ 소자의 제조방법
KR20090009772A (ko) 2005-12-22 2009-01-23 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
EP2007933B1 (en) 2006-03-30 2017-05-10 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US8357243B2 (en) 2008-06-12 2013-01-22 Sixpoint Materials, Inc. Method for testing group III-nitride wafers and group III-nitride wafers with test data
US20070243703A1 (en) * 2006-04-14 2007-10-18 Aonex Technololgies, Inc. Processes and structures for epitaxial growth on laminate substrates
CN102437152A (zh) 2006-04-24 2012-05-02 克利公司 侧视表面安装式白光led
KR100809209B1 (ko) * 2006-04-25 2008-02-29 삼성전기주식회사 비극성 ｍ면 질화물 반도체 제조방법
DE102006061167A1 (de) * 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
TWI336965B (en) * 2006-06-16 2011-02-01 High Power Optoelectronics Inc Semiconductor light emitting device and method of fabricating the same
WO2007149487A2 (en) * 2006-06-21 2007-12-27 The Regents Of The University Of California Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth
KR100755656B1 (ko) * 2006-08-11 2007-09-04 삼성전기주식회사 질화물계 반도체 발광소자의 제조방법
KR100867518B1 (ko) * 2006-09-06 2008-11-07 삼성전기주식회사 질화물계 반도체 발광소자의 제조방법
JP4296195B2 (ja) * 2006-11-15 2009-07-15 シャープ株式会社 電界効果トランジスタ
FR2910179B1 (fr) * 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8323406B2 (en) 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN101652832B (zh) 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US20080194077A1 (en) * 2007-02-08 2008-08-14 National Central University Method of low temperature wafer bonding through Au/Ag diffusion
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
EP2128891B1 (en) * 2007-02-28 2015-09-02 Shin-Etsu Chemical Co., Ltd. Process for producing laminated substrate
US20080217634A1 (en) * 2007-03-06 2008-09-11 Wen-Huang Liu Vertical light-emitting diode structure with omni-directional reflector
US20090085065A1 (en) * 2007-03-29 2009-04-02 The Regents Of The University Of California Method to fabricate iii-n semiconductor devices on the n-face of layers which are grown in the iii-face direction using wafer bonding and substrate removal
US7732301B1 (en) * 2007-04-20 2010-06-08 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
US20080258130A1 (en) * 2007-04-23 2008-10-23 Bergmann Michael J Beveled LED Chip with Transparent Substrate
CN101295758B (zh) * 2007-04-29 2013-03-06 晶能光电（江西）有限公司 含有碳基衬底的铟镓铝氮发光器件以及其制造方法
JP4341693B2 (ja) * 2007-05-16 2009-10-07 ウシオ電機株式会社 Ｌｅｄ素子およびその製造方法
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US7646025B1 (en) * 2007-05-31 2010-01-12 Chien-Min Sung Diamond LED devices and associated methods
US8309967B2 (en) * 2007-05-31 2012-11-13 Chien-Min Sung Diamond LED devices and associated methods
US20080303033A1 (en) * 2007-06-05 2008-12-11 Cree, Inc. Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
TWI353068B (en) * 2007-07-19 2011-11-21 Lite On Technology Corp Semiconductor light-emitting element and process f
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
US8187900B2 (en) * 2007-08-10 2012-05-29 Hong Kong Applied Science and Technology Research Institute Company Limited Optimization of polishing stop design
US8222064B2 (en) 2007-08-10 2012-07-17 Hong Kong Applied Science and Technology Research Institute Company Limited Vertical light emitting diode device structure and method of fabricating the same
US7846753B2 (en) * 2007-08-10 2010-12-07 Hong Kong Applied Science And Technology Research Institute Vertical light emitting diode and method of making a vertical light emitting diode
JP2009049044A (ja) * 2007-08-13 2009-03-05 Sumitomo Electric Ind Ltd 半導体レーザを作製する方法
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
FR2920589B1 (fr) * 2007-09-04 2010-12-03 Soitec Silicon On Insulator "procede d'obtention d'un substrat hybride comprenant au moins une couche d'un materiau nitrure"
US7915643B2 (en) * 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
JP5452900B2 (ja) * 2007-09-21 2014-03-26 株式会社半導体エネルギー研究所 半導体膜付き基板の作製方法
DE102007046519A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung
JP2009099675A (ja) * 2007-10-15 2009-05-07 Showa Denko Kk 発光ダイオードの製造方法及び発光ダイオード、並びにランプ
JP5688203B2 (ja) * 2007-11-01 2015-03-25 株式会社半導体エネルギー研究所 半導体基板の作製方法
JP2011503847A (ja) * 2007-11-02 2011-01-27 ワコンダ テクノロジーズ， インコーポレイテッド 結晶質薄膜光起電力構造およびその形成方法
JP5156347B2 (ja) * 2007-11-21 2013-03-06 ローム株式会社 半導体発光素子およびその製造方法
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8093136B2 (en) * 2007-12-28 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
MX2010007723A (es) * 2008-01-15 2010-08-09 First Solar Inc Dispositivos fotovoltaicos tratados con plasma.
FR2926674B1 (fr) * 2008-01-21 2010-03-26 Soitec Silicon On Insulator Procede de fabrication d'une structure composite avec couche d'oxyde de collage stable
WO2009097611A1 (en) * 2008-02-01 2009-08-06 The Regents Of The University Of California Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
US8169136B2 (en) * 2008-02-21 2012-05-01 Nitto Denko Corporation Light emitting device with translucent ceramic plate
TWI487817B (zh) * 2008-02-25 2015-06-11 Sixpoint Materials Inc 用於製造第iii族氮化物晶圓之方法及第iii族氮化物晶圓
WO2009111008A1 (en) * 2008-03-05 2009-09-11 Sheetak, Inc. Method and apparatus for switched thermoelectric cooling of fluids
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
WO2009114108A2 (en) 2008-03-08 2009-09-17 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells
CN101978517A (zh) * 2008-03-19 2011-02-16 史泰克公司 金属芯热电冷却和动力产生装置
US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
KR101438818B1 (ko) * 2008-04-01 2014-09-05 엘지이노텍 주식회사 발광다이오드 소자
DE102008038852B4 (de) 2008-06-03 2024-02-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
EP2291551B1 (en) 2008-06-04 2018-04-25 SixPoint Materials, Inc. High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
WO2009149299A1 (en) 2008-06-04 2009-12-10 Sixpoint Materials Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US20120000415A1 (en) * 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
TW201003981A (en) * 2008-07-14 2010-01-16 Advanced Optoelectronic Tech Substrate structure and method of removing the substrate structure
KR20100008123A (ko) * 2008-07-15 2010-01-25 고려대학교 산학협력단 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
TWI495141B (zh) * 2008-08-01 2015-08-01 Epistar Corp 晶圓發光結構之形成方法及光源產生裝置
US8525200B2 (en) * 2008-08-18 2013-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitting diode with non-metallic reflector
US20110147705A1 (en) * 2008-08-19 2011-06-23 Lattice Power (Jiangxi) Corporation Semiconductor light-emitting device with silicone protective layer
WO2010027650A1 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company Light source with improved monochromaticity
WO2010036602A1 (en) * 2008-09-26 2010-04-01 S.O.I.Tec Silicon On Insulator Technologies Method of forming a composite laser substrate
JP2010087218A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体からなる発光素子およびその製造方法
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US9289132B2 (en) 2008-10-07 2016-03-22 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
WO2010045567A1 (en) * 2008-10-16 2010-04-22 Sixpoint Materials, Inc. Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
US8410511B2 (en) * 2008-10-17 2013-04-02 Goldeneye, Inc. Methods for high temperature processing of epitaxial chips
DE102008052405A1 (de) * 2008-10-21 2010-04-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
WO2010060034A1 (en) * 2008-11-24 2010-05-27 Sixpoint Materials, Inc. METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US8415187B2 (en) 2009-01-28 2013-04-09 Solexant Corporation Large-grain crystalline thin-film structures and devices and methods for forming the same
TW201035513A (en) * 2009-03-25 2010-10-01 Wah Hong Ind Corp Method for manufacturing heat dissipation interface device and product thereof
US8955580B2 (en) 2009-08-14 2015-02-17 Wah Hong Industrial Corp. Use of a graphite heat-dissipation device including a plating metal layer
US20100270653A1 (en) * 2009-04-24 2010-10-28 Christopher Leitz Crystalline thin-film photovoltaic structures and methods for forming the same
JP5597933B2 (ja) * 2009-05-01 2014-10-01 住友電気工業株式会社 Ｉｉｉ族窒化物半導体層貼り合わせ基板およびその製造方法
WO2010129718A2 (en) 2009-05-05 2010-11-11 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
TWI592996B (zh) 2009-05-12 2017-07-21 美國伊利諾大學理事會 用於可變形及半透明顯示器之超薄微刻度無機發光二極體之印刷總成
CN102460739A (zh) * 2009-06-05 2012-05-16 加利福尼亚大学董事会 长波长非极性及半极性(Al,Ga,In)N基激光二极管
JP5397042B2 (ja) * 2009-06-26 2014-01-22 富士通株式会社 半導体装置の製造方法
IN2012DN01366A (https=) 2009-07-17 2015-06-05 Sheetak Inc
US8436362B2 (en) 2009-08-24 2013-05-07 Micron Technology, Inc. Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
US8580593B2 (en) * 2009-09-10 2013-11-12 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
KR101113692B1 (ko) * 2009-09-17 2012-02-27 한국과학기술원 태양전지 제조방법 및 이에 의하여 제조된 태양전지
KR20120094477A (ko) 2009-09-25 2012-08-24 크리, 인코포레이티드 낮은 눈부심 및 높은 광도 균일성을 갖는 조명 장치
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
CN102652354B (zh) * 2009-12-15 2015-02-18 索泰克公司 用于重复利用衬底的处理
US8666471B2 (en) 2010-03-17 2014-03-04 The Board Of Trustees Of The University Of Illinois Implantable biomedical devices on bioresorbable substrates
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
US10918298B2 (en) 2009-12-16 2021-02-16 The Board Of Trustees Of The University Of Illinois High-speed, high-resolution electrophysiology in-vivo using conformal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
CN102034912B (zh) * 2009-12-29 2015-03-25 比亚迪股份有限公司 发光二极管外延片、其制作方法及芯片的制作方法
US8648387B2 (en) * 2009-12-30 2014-02-11 Industrial Technology Research Institute Nitride semiconductor template and method of manufacturing the same
KR101149677B1 (ko) 2010-01-20 2012-07-11 주식회사 엘지실트론 플렉서블 소자 제조방법 및 이에 의하여 제조된 플렉서블 소자, 태양전지, ｌｅｄ
KR101055003B1 (ko) * 2010-03-09 2011-08-05 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지, 조명 시스템, 및 발광 소자 제조방법
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
DE102010017155B4 (de) * 2010-05-31 2012-01-26 Q-Cells Se Solarzelle
US9564320B2 (en) * 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
WO2012003304A1 (en) 2010-06-30 2012-01-05 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
WO2012020676A1 (ja) * 2010-08-10 2012-02-16 株式会社 東芝 ＧａＮベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたＧａＮベース半導体の製造方法
JP5593163B2 (ja) * 2010-08-18 2014-09-17 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
FR2963982B1 (fr) * 2010-08-20 2012-09-28 Soitec Silicon On Insulator Procede de collage a basse temperature
JPWO2012043474A1 (ja) * 2010-09-27 2014-02-06 株式会社東芝 ＧａＮベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたＧａＮベース半導体の製造方法
CN101964385B (zh) * 2010-10-28 2012-08-29 映瑞光电科技(上海)有限公司 发光二极管及其形成方法
JP5938871B2 (ja) * 2010-11-15 2016-06-22 住友電気工業株式会社 ＧａＮ系膜の製造方法
US20120118222A1 (en) * 2010-11-15 2012-05-17 Sumitomo Electric Industries, Ltd. METHOD OF MANUFACTURING GaN-BASED FILM
US9000469B2 (en) * 2010-12-08 2015-04-07 Nichia Corporation Nitride group semiconductor light emitting device
WO2012082729A1 (en) 2010-12-14 2012-06-21 Hexatech, Inc. Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies, and application to the manufacture of semi-conductors
US9142412B2 (en) 2011-02-03 2015-09-22 Soitec Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
US8436363B2 (en) 2011-02-03 2013-05-07 Soitec Metallic carrier for layer transfer and methods for forming the same
US9082948B2 (en) 2011-02-03 2015-07-14 Soitec Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
JP2012178548A (ja) * 2011-02-03 2012-09-13 Soytec 層移転用金属キャリア及びその形成方法
CN102650039A (zh) * 2011-02-28 2012-08-29 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
US9184228B2 (en) 2011-03-07 2015-11-10 Sumitomo Electric Industries, Ltd. Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer
JP2012230969A (ja) * 2011-04-25 2012-11-22 Sumitomo Electric Ind Ltd ＧａＮ系半導体デバイスの製造方法
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US20120309172A1 (en) * 2011-05-31 2012-12-06 Epowersoft, Inc. Epitaxial Lift-Off and Wafer Reuse
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
FR2977073B1 (fr) * 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de transfert d'une couche de semi-conducteur, et substrat comprenant une structure de confinement
EP2733752B1 (en) 2011-07-12 2016-10-05 Marubun Corporation Light emitting element and method for manufacturing the same
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
ITMI20111559A1 (it) * 2011-08-30 2013-03-01 St Microelectronics Srl Strato tco di contatto frontale di un pannello solare a film sottile con strato barriera di metallo refrattario e processo di fabbricazione
US9269858B2 (en) * 2011-08-31 2016-02-23 Micron Technology, Inc. Engineered substrates for semiconductor devices and associated systems and methods
EP2761677B1 (en) * 2011-09-30 2019-08-21 Microlink Devices, Inc. Light emitting diode fabricated by epitaxial lift-off
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
CN108389893A (zh) 2011-12-01 2018-08-10 伊利诺伊大学评议会 经设计以经历可编程转变的瞬态器件
US9269876B2 (en) * 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
FR2988219B1 (fr) * 2012-03-16 2015-03-13 Soitec Silicon On Insulator Procedes de formation de structures semi-conductrices comprenant un materiau semi-conducteur des groupes iii-v en utilisant des substrats comprenant du molybdene, et structures formees par ces procedes
US8916483B2 (en) 2012-03-09 2014-12-23 Soitec Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum
WO2013132332A1 (en) * 2012-03-09 2013-09-12 Soitec Methods for forming semiconductor structures including iii-v semiconductor material using substrates comprising molybdenum, and structures formed by such methods
CN103305908A (zh) * 2012-03-14 2013-09-18 东莞市中镓半导体科技有限公司 一种用于GaN生长的复合衬底
EP2830492B1 (en) 2012-03-30 2021-05-19 The Board of Trustees of the University of Illinois Appendage mountable electronic devices conformable to surfaces and method of making the same
WO2013152362A1 (en) * 2012-04-07 2013-10-10 Axlen, Inc. High flux high brightness led lighting devices
US9257339B2 (en) * 2012-05-04 2016-02-09 Silicon Genesis Corporation Techniques for forming optoelectronic devices
US20130328098A1 (en) * 2012-05-15 2013-12-12 High Power Opto. Inc. Buffer layer structure for light-emitting diode
EP2824719A4 (en) * 2012-07-23 2016-01-06 Sino Nitride Semiconductor Co COMPOSITE SUPPLEMENT WITH PROTECTIVE LAYER FOR PREVENTING THE DIFFUSION OF METALS
JP5792694B2 (ja) * 2012-08-14 2015-10-14 株式会社東芝 半導体発光素子
US8735219B2 (en) 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
TWI588955B (zh) * 2012-09-24 2017-06-21 索泰克公司 使用多重底材形成iii-v族半導體結構之方法及應用此等方法所製作之半導體元件
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US20140103499A1 (en) * 2012-10-11 2014-04-17 International Business Machines Corporation Advanced handler wafer bonding and debonding
US20150279945A1 (en) * 2012-10-26 2015-10-01 Daniel Francis Semiconductor devices with improved reliability and operating life and methods of manufactuirng the same
US9082692B2 (en) 2013-01-02 2015-07-14 Micron Technology, Inc. Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
FR3001225B1 (fr) * 2013-01-22 2016-01-22 Commissariat Energie Atomique Procede de fabrication d’une structure par collage direct
KR102077742B1 (ko) * 2013-02-27 2020-02-14 삼성전자주식회사 반도체 요소 전사 방법
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
FR3003692B1 (fr) * 2013-03-25 2015-04-10 Commissariat Energie Atomique Procede de fabrication d’une structure a multijonctions pour cellule photovoltaique
JP2014192272A (ja) * 2013-03-27 2014-10-06 Takamatsu Mekki:Kk Ｌｅｄ用のメタル基板
US9650723B1 (en) * 2013-04-11 2017-05-16 Soraa, Inc. Large area seed crystal for ammonothermal crystal growth and method of making
US9105798B2 (en) * 2013-05-14 2015-08-11 Sun Harmonics, Ltd Preparation of CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
WO2015009669A1 (en) * 2013-07-16 2015-01-22 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
CN105283968A (zh) 2013-07-17 2016-01-27 丸文株式会社 半导体发光元件及其制造方法
US9064789B2 (en) 2013-08-12 2015-06-23 International Business Machines Corporation Bonded epitaxial oxide structures for compound semiconductor on silicon substrates
US20150048301A1 (en) * 2013-08-19 2015-02-19 Micron Technology, Inc. Engineered substrates having mechanically weak structures and associated systems and methods
US9230847B2 (en) * 2013-10-01 2016-01-05 Micron Technology, Inc. Engineered substrate assemblies with thermally opaque materials, and associated systems, devices, and methods
TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
TWI623074B (zh) 2013-12-27 2018-05-01 財團法人工業技術研究院 導電散熱基板
WO2015128254A1 (en) * 2014-02-25 2015-09-03 Koninklijke Philips N.V. Light emitting semiconductor devices with getter layer
JP5757512B1 (ja) * 2014-03-06 2015-07-29 丸文株式会社 深紫外ｌｅｄ及びその製造方法
US10163674B2 (en) * 2014-11-27 2018-12-25 National Institute Of Advanced Industrial Science And Technology Circular support substrate for semiconductor
JP5999800B1 (ja) 2015-01-16 2016-09-28 丸文株式会社 深紫外ｌｅｄ及びその製造方法
CA2975261C (en) * 2015-03-10 2019-07-30 Halliburton Energy Services, Inc. Polycrystalline diamond compacts and methods of manufacture
CN107851208B (zh) 2015-06-01 2021-09-10 伊利诺伊大学评议会 具有无线供电和近场通信能力的小型化电子系统
WO2016196673A1 (en) 2015-06-01 2016-12-08 The Board Of Trustees Of The University Of Illinois Alternative approach to uv sensing
KR20180010274A (ko) * 2015-06-19 2018-01-30 큐맷, 인코포레이티드 본드 및 릴리스 레이어 이송 프로세스
US10680134B2 (en) 2015-09-03 2020-06-09 Marubun Corporation Deep ultraviolet LED and method for manufacturing the same
US9997391B2 (en) 2015-10-19 2018-06-12 QROMIS, Inc. Lift off process for chip scale package solid state devices on engineered substrate
US9954065B2 (en) * 2015-11-09 2018-04-24 Infineon Technologies Ag Method of forming a semiconductor device and semiconductor device
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
US9589802B1 (en) * 2015-12-22 2017-03-07 Varian Semuconductor Equipment Associates, Inc. Damage free enhancement of dopant diffusion into a substrate
FR3047350B1 (fr) * 2016-02-03 2018-03-09 Soitec Substrat avance a miroir integre
JP6569802B2 (ja) * 2016-03-28 2019-09-04 株式会社ニコン 基板貼り合わせ装置および基板貼り合わせ方法
EP3249701B1 (en) * 2016-03-30 2020-07-08 Marubun Corporation Deep ultraviolet led and production method therefor
US10297445B2 (en) * 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
TWI823763B (zh) 2016-06-24 2023-11-21 美商克若密斯股份有限公司 工程基板結構
US10186630B2 (en) * 2016-08-02 2019-01-22 QMAT, Inc. Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
TWI732925B (zh) * 2016-08-23 2021-07-11 美商克若密斯股份有限公司 與工程基板整合之電力元件
US10438838B2 (en) * 2016-09-01 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and related method
US10622468B2 (en) 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
US10535739B2 (en) * 2017-04-24 2020-01-14 Enkris Semiconductor, Inc Semiconductor structure and method of preparing semiconductor structure
JP6912716B2 (ja) * 2017-08-10 2021-08-04 富士通株式会社 半導体装置及びその製造方法
DE102017123154B4 (de) * 2017-10-05 2025-07-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
CN107742606B (zh) * 2017-10-30 2024-04-02 桂林电子科技大学 一种键合晶圆的结构及其制备方法
US11309454B2 (en) 2018-01-26 2022-04-19 Marubun Corporation Deep ultraviolet LED and method for producing the same
KR102131619B1 (ko) * 2018-06-12 2020-07-08 한국과학기술연구원 인화계 기판의 결정결함을 방지하기 위해 박막층을 형성하는 방법
WO2020010056A1 (en) 2018-07-03 2020-01-09 Invensas Bonding Technologies, Inc. Techniques for joining dissimilar materials in microelectronics
WO2020129297A1 (ja) * 2018-12-21 2020-06-25 Ａｇｃ株式会社 積層体及び積層体の製造方法
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) * 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
JP7326759B2 (ja) * 2019-02-06 2023-08-16 三菱ケミカル株式会社 ＧａＮ単結晶製造方法
FR3094559B1 (fr) * 2019-03-29 2024-06-21 Soitec Silicon On Insulator Procédé de transfert de paves d’un substrat donneur sur un substrat receveur
US10727216B1 (en) 2019-05-10 2020-07-28 Sandisk Technologies Llc Method for removing a bulk substrate from a bonded assembly of wafers
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
WO2020255376A1 (ja) * 2019-06-21 2020-12-24 三菱電機株式会社 複合基板の製造方法、および、複合基板
US11575055B2 (en) 2019-07-15 2023-02-07 SLT Technologies, Inc Methods for coupling of optical fibers to a power photodiode
US11444216B2 (en) 2019-07-15 2022-09-13 Slt Technologies, Inc. Power photodiode structures, methods of making, and methods of use
US11569398B2 (en) 2019-07-15 2023-01-31 SLT Technologies, Inc Power photodiode structures and devices
US10910272B1 (en) 2019-10-22 2021-02-02 Sandisk Technologies Llc Reusable support substrate for formation and transfer of semiconductor devices and methods of using the same
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
WO2021162727A1 (en) 2020-02-11 2021-08-19 SLT Technologies, Inc Improved group iii nitride substrate, method of making, and method of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
CN115943489A (zh) 2020-03-19 2023-04-07 隔热半导体粘合技术公司 用于直接键合结构的尺寸补偿控制
US12446467B2 (en) 2020-04-14 2025-10-14 Sheetak, Inc. Thermoelectric energy harvesting apparatus system and method
JP2023527540A (ja) * 2020-05-29 2023-06-29 ザ ガバメント オブ ザ ユナイテッド ステイツ オブ アメリカ， アズ リプレゼンテッド バイ ザ セクレタリー オブ ザ ネイビー 大面積ｉｉｉ族窒化物半導体材料およびデバイスの任意の基板への転写方法
JP2021195299A (ja) * 2020-06-09 2021-12-27 信越化学工業株式会社 Ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
CN115698394A (zh) * 2020-06-29 2023-02-03 日本碍子株式会社 外延结晶生长用自立基板及功能元件
CN112204752B (zh) * 2020-08-07 2024-11-19 英诺赛科（珠海）科技有限公司 半导体装置和其制造方法
CN112968107B (zh) * 2020-08-26 2022-07-26 重庆康佳光电技术研究院有限公司 弱化结构的制作方法、微器件的转移方法
JP7585794B2 (ja) * 2021-01-07 2024-11-19 三菱電機株式会社 半導体装置
CN112750689A (zh) * 2021-01-18 2021-05-04 西安电子科技大学 镓极性面氮化镓材料及同质外延生长方法
US11855040B2 (en) * 2021-05-12 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Ion implantation with annealing for substrate cutting
KR20230000950A (ko) * 2021-06-25 2023-01-03 삼성전자주식회사 발광 소자 및 이를 포함하는 디스플레이 장치
CN113725325A (zh) * 2021-07-30 2021-11-30 苏州光舵微纳科技股份有限公司 一种图形化蓝宝石复合衬底结构及其制备方法
TWI785763B (zh) * 2021-08-27 2022-12-01 合晶科技股份有限公司 複合基板及其製造方法
US12593610B2 (en) 2022-05-11 2026-03-31 Sheetak, Inc. Thermoelectric devices on ceramic
CN115188656B (zh) * 2022-06-10 2025-10-03 华南理工大学 一种单片集成材料及其制备方法
WO2024112606A1 (en) * 2022-11-22 2024-05-30 Psiquantum, Corp. Method of removing a handle substrate from a solid-state die
CN116246951B (zh) * 2023-01-18 2025-12-30 浙江芯科半导体有限公司 一种从生长基板上剥离GaN外延层的方法
TWI883558B (zh) * 2023-09-27 2025-05-11 絜靜精微有限公司 晶種層植入之晶圓載板製造方法及其晶圓結構
TWI878102B (zh) * 2024-04-24 2025-03-21 光鋐科技股份有限公司 發光二極體及其製造方法

Family Cites Families (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217564A (en) 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
NZ199835A (en) 1981-03-05 1984-03-30 Mobil Oil Corp Catalytic conversion of methanol dimethyl ether or a mixture thereof to ethylene
FR2504522A1 (fr) 1981-04-24 1982-10-29 Inst Francais Du Petrole Procede de purification d'une coupe c4 et/ou c5 d'hydrocarbures renfermant de l'eau et du dimethylether comme impuretes
US4499327A (en) 1982-10-04 1985-02-12 Union Carbide Corporation Production of light olefins
US5013681A (en) 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
JPH03270220A (ja) 1990-03-20 1991-12-02 Fujitsu Ltd バルク結晶成長用種結晶の作製方法
US6067062A (en) 1990-09-05 2000-05-23 Seiko Instruments Inc. Light valve device
US5090977A (en) 1990-11-13 1992-02-25 Exxon Chemical Patents Inc. Sequence for separating propylene from cracked gases
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5231047A (en) 1991-12-19 1993-07-27 Energy Conversion Devices, Inc. High quality photovoltaic semiconductor material and laser ablation method of fabrication same
FR2697835B1 (fr) 1992-11-06 1995-01-27 Inst Francais Du Petrole Procédé et dispositif de déshydrogénation catalytique d'une charge paraffinique C2+ comprenant des moyens pour inhiber l'eau dans l'effluent.
US5336841A (en) 1993-04-05 1994-08-09 Chemical Research & Licensing Company Oxygenate removal in MTBE process
FR2711986B1 (fr) 1993-11-05 1996-02-02 Inst Francais Du Petrole Procédé de séparation des composés oxygénés d'hydrocarbures, combinant une distillation et une perméation et son utilisation en éthérification.
US5391257A (en) 1993-12-10 1995-02-21 Rockwell International Corporation Method of transferring a thin film to an alternate substrate
US5641381A (en) 1995-03-27 1997-06-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Preferentially etched epitaxial liftoff of InP material
DE19516487C1 (de) * 1995-05-05 1996-07-25 Fraunhofer Ges Forschung Verfahren zur vertikalen Integration mikroelektronischer Systeme
FR2747506B1 (fr) 1996-04-11 1998-05-15 Commissariat Energie Atomique Procede d'obtention d'un film mince de materiau semiconducteur comprenant notamment des composants electroniques
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
FR2748850B1 (fr) 1996-05-15 1998-07-24 Commissariat Energie Atomique Procede de realisation d'un film mince de materiau solide et applications de ce procede
US5710057A (en) 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method
US5955749A (en) 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
SG63832A1 (en) 1997-03-26 1999-03-30 Canon Kk Substrate and production method thereof
US6159824A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6150239A (en) 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
US5877070A (en) 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US5914433A (en) 1997-07-22 1999-06-22 Uop Lll Process for producing polymer grade olefins
FR2767416B1 (fr) 1997-08-12 1999-10-01 Commissariat Energie Atomique Procede de fabrication d'un film mince de materiau solide
JPH1167952A (ja) * 1997-08-15 1999-03-09 Sony Corp 窒化アルミニウム基板の製造方法
US5882987A (en) 1997-08-26 1999-03-16 International Business Machines Corporation Smart-cut process for the production of thin semiconductor material films
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2774510B1 (fr) 1998-02-02 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats, notamment semi-conducteurs
WO1999042892A1 (en) 1998-02-19 1999-08-26 Massachusetts Institute Of Technology Photonic crystal omnidirectional reflector
US6121504A (en) 1998-04-29 2000-09-19 Exxon Chemical Patents Inc. Process for converting oxygenates to olefins with direct product quenching for heat recovery
JP3525061B2 (ja) 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
US6346458B1 (en) 1998-12-31 2002-02-12 Robert W. Bower Transposed split of ion cut materials
US6328796B1 (en) 1999-02-01 2001-12-11 The United States Of America As Represented By The Secretary Of The Navy Single-crystal material on non-single-crystalline substrate
JP3619393B2 (ja) * 1999-06-29 2005-02-09 京セラ株式会社 光半導体素子収納用パッケージ
FR2795866B1 (fr) 1999-06-30 2001-08-17 Commissariat Energie Atomique Procede de realisation d'une membrane mince et structure a membrane ainsi obtenue
FR2795865B1 (fr) 1999-06-30 2001-08-17 Commissariat Energie Atomique Procede de realisation d'un film mince utilisant une mise sous pression
US6323108B1 (en) * 1999-07-27 2001-11-27 The United States Of America As Represented By The Secretary Of The Navy Fabrication ultra-thin bonded semiconductor layers
US6242324B1 (en) 1999-08-10 2001-06-05 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating singe crystal materials over CMOS devices
JP4414535B2 (ja) 2000-01-13 2010-02-10 進 野田 半導体装置の製造方法
US6602613B1 (en) 2000-01-20 2003-08-05 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
JP3680677B2 (ja) * 2000-02-08 2005-08-10 セイコーエプソン株式会社 半導体素子製造装置および半導体素子の製造方法
JP4064592B2 (ja) 2000-02-14 2008-03-19 シャープ株式会社 光電変換装置
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP2001267242A (ja) 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
FR2810448B1 (fr) 2000-06-16 2003-09-19 Soitec Silicon On Insulator Procede de fabrication de substrats et substrats obtenus par ce procede
EP1482549B1 (en) 2003-05-27 2011-03-30 S.O.I. Tec Silicon on Insulator Technologies S.A. Method of fabrication of a heteroepitaxial microstructure
FR2840731B3 (fr) 2002-06-11 2004-07-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2817395B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
US6497763B2 (en) 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
US20050026432A1 (en) 2001-04-17 2005-02-03 Atwater Harry A. Wafer bonded epitaxial templates for silicon heterostructures
US7238622B2 (en) 2001-04-17 2007-07-03 California Institute Of Technology Wafer bonded virtual substrate and method for forming the same
US7019339B2 (en) 2001-04-17 2006-03-28 California Institute Of Technology Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby
JP3699917B2 (ja) * 2001-09-19 2005-09-28 株式会社東芝 半導体素子及びその製造方法
US20030064535A1 (en) 2001-09-28 2003-04-03 Kub Francis J. Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
FR2834123B1 (fr) 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
JP2003192442A (ja) * 2001-12-26 2003-07-09 Toshiba Corp 窒化アルミニウム基板、薄膜付き窒化アルミニウム基板およびこれからなるレーザー発光素子用サブマウント材
KR20040070297A (ko) 2002-01-02 2004-08-06 레베오 인코포레이티드 광전지 및 그 제조 방법
FR2835097B1 (fr) 2002-01-23 2005-10-14 Procede optimise de report d'une couche mince de carbure de silicium sur un substrat d'accueil
JP2003273469A (ja) * 2002-03-15 2003-09-26 Nec Corp 窒化ガリウム系半導体素子及びその製造方法
KR100476901B1 (ko) 2002-05-22 2005-03-17 삼성전자주식회사 소이 반도체기판의 형성방법
JP2004071657A (ja) * 2002-08-01 2004-03-04 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体素子の製造方法
US6989314B2 (en) 2003-02-12 2006-01-24 S.O.I.Tec Silicon On Insulator Technologies S.A. Semiconductor structure and method of making same
US7176528B2 (en) 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
FR2857982B1 (fr) * 2003-07-24 2007-05-18 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
US7344903B2 (en) 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
US7358586B2 (en) 2004-09-28 2008-04-15 International Business Machines Corporation Silicon-on-insulator wafer having reentrant shape dielectric trenches
EP1681712A1 (en) 2005-01-13 2006-07-19 S.O.I. Tec Silicon on Insulator Technologies S.A. Method of producing substrates for optoelectronic applications
US7804100B2 (en) 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
US7388278B2 (en) 2005-03-24 2008-06-17 International Business Machines Corporation High performance field effect transistors on SOI substrate with stress-inducing material as buried insulator and methods
WO2006116030A2 (en) 2005-04-21 2006-11-02 Aonex Technologies, Inc. Bonded intermediate substrate and method of making same
DE102006007293B4 (de) 2006-01-31 2023-04-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11661670B2 (en) * 2020-01-16 2023-05-30 SLT Technologies, Inc High quality group-III metal nitride seed crystal and method of making

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