JPWO2012043474A1 - GaNベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたGaNベース半導体の製造方法 - Google Patents
GaNベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたGaNベース半導体の製造方法 Download PDFInfo
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- JPWO2012043474A1 JPWO2012043474A1 JP2012536435A JP2012536435A JPWO2012043474A1 JP WO2012043474 A1 JPWO2012043474 A1 JP WO2012043474A1 JP 2012536435 A JP2012536435 A JP 2012536435A JP 2012536435 A JP2012536435 A JP 2012536435A JP WO2012043474 A1 JPWO2012043474 A1 JP WO2012043474A1
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- aluminum nitride
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- based semiconductor
- polycrystalline aluminum
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- 239000000758 substrate Substances 0.000 title claims abstract description 137
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 109
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
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Abstract
Description
窒化アルミニウム粉末(平均粒径1μm、酸素含有量1.0質量%)とイットリア(Y2O3)粉末(平均粒径1μm)とを、表1に示した割合で混合して原料粉末を調製した。
実施例1〜5および比較例1の多結晶窒化アルミニウム基板を、直径2インチ(50.8mm)×厚さ1mm、表面粗さ(Ra)が0.01μmの円盤状に加工した。各試料を用いてGaN半導体を結晶成長させた。
窒化アルミニウム粉末(平均粒径0.8μm、酸素含有量1.0質量%)97質量%とイットリア(Y2O3)粉末(平均粒径1.2μm)3質量%を混合して原料粉末を調製した。
実施例6〜10の多結晶窒化アルミニウム基板を、直径6インチ(152.4mm)×厚さ1mm、表面粗さ(Ra)が0.01μmの円盤状に加工した。各試料を用いてGaN半導体を結晶成長させた。
2…GaNベース半導体層
3…バッファー層
L…多結晶窒化アルミニウム基材の直径
W…多結晶窒化アルミニウム基材の厚さ
Claims (12)
- GaNベース半導体を粒成長させるための基板材料としての多結晶窒化アルミニウム基材であって、焼結助剤成分を1〜10質量%含有し、熱伝導率150W/m・K以上、かつ、基板表面に最大径200μmを超える凹部がないことを特徴とする、GaNベース半導体結晶成長用多結晶窒化アルミニウム基材。
- 前記焼結助剤成分が、希土類元素、希土類元素酸化物、および希土類元素アルミニウム酸化物からなる群から選ばれる少なくとも1種以上を含んでなる、請求項1に記載の多結晶窒化アルミニウム基材。
- 前記凹部が、ポア、AlN結晶粒子の脱粒、および焼結助剤成分の脱粒からなる群から選択されるいずれか1種である、請求項1または請求項2に記載の多結晶窒化アルミニウム基板。
- 前記凹部の最大径が50μm以下である、請求項1〜3のいずれか1項に記載の結晶窒化アルミニウム基板。
- 前記多結晶窒化アルミニウム基板の表面粗さ(Ra)が0.1μm以下である、請求項1〜4のいずれか1項に記載の多結晶窒化アルミニウム基板。
- 前記多結晶窒化アルミニウム基材が、窒化アルミニウム結晶と粒界相とを含んでなり、前記窒化アルミニウム結晶粒子の平均粒径が7μm以下である、請求項1〜5のいずれか1項に記載の多結晶窒化アルミニウム基材。
- 前記基板の直径が50mm以上である、請求項1〜6のいずれか1項に記載の多結晶窒化アルミニウム基材。
- 前記基板表面には、最大径20μmを超える凹部が、単位面積1インチ×1インチあたり0〜1個である、請求項1〜7のいずれか1項に記載の多結晶窒化アルミニウム基材。
- 前記基板表面の粒界相中には、最大径0.5μmを超えるマイクロポアが単位面積10μm×10μmあたり、0〜1個である、請求項1〜8のいずれか1項に記載の多結晶窒化アルミニウム基材。
- GaNベース半導体を製造する方法であって、請求項1〜9のいずれか1項に記載の多結晶窒化アルミニウム基材を用いてGaNベース半導体結晶を成長させることを含むことを特徴とする、GaNベース半導体の製造方法。
- GaNベース半導体をバッファー層を介して結晶成長させる、請求項10記載のGaNベース半導体の製造方法。
- GaNベース半導体が、GaN、InGaN、AlGaN、およびInAlGaNからなる群から選択される一種からなる、請求項10または11に記載のGaNベース半導体の製造方法。
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