JP5256364B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5256364B2 JP5256364B2 JP2012107311A JP2012107311A JP5256364B2 JP 5256364 B2 JP5256364 B2 JP 5256364B2 JP 2012107311 A JP2012107311 A JP 2012107311A JP 2012107311 A JP2012107311 A JP 2012107311A JP 5256364 B2 JP5256364 B2 JP 5256364B2
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- JP
- Japan
- Prior art keywords
- film
- insulating film
- emitting device
- light emitting
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G07F9/00—Details other than those peculiar to special kinds or types of apparatus
- G07F9/10—Casings or parts thereof, e.g. with means for heating or cooling
- G07F9/105—Heating or cooling means, for temperature and humidity control, for the conditioning of articles and their storage
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- G07F—COIN-FREED OR LIKE APPARATUS
- G07F13/00—Coin-freed apparatus for controlling dispensing or fluids, semiliquids or granular material from reservoirs
- G07F13/06—Coin-freed apparatus for controlling dispensing or fluids, semiliquids or granular material from reservoirs with selective dispensing of different fluids or materials or mixtures thereof
- G07F13/065—Coin-freed apparatus for controlling dispensing or fluids, semiliquids or granular material from reservoirs with selective dispensing of different fluids or materials or mixtures thereof for drink preparation
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H—ELECTRICITY
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- H10K50/824—Cathodes combined with auxiliary electrodes
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- H10K50/805—Electrodes
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- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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Description
(参考例1)
(実施例2)
(実施例3)
(実施例4)
(実施例5)
(実施例6)
(実施例7)
Claims (3)
- プラスチック基板の上方に、シリコン膜を有し、
前記シリコン膜の上方に、第1の絶縁膜を有し、
前記第1の絶縁膜の上方に、ゲート電極を有し、
前記ゲート電極の上方に、第2の絶縁膜を有し、
前記第2の絶縁膜の上方に、金属配線を有し、
前記金属配線の上方に、第3の絶縁膜を有し、
前記第3の絶縁膜の上方に、第1の金属膜を有し、
前記第1の金属膜の上方に、透明導電膜を有し、
前記透明導電膜の上方に、第4の絶縁膜を有し、
前記透明導電膜の上方及び前記第4の絶縁膜の上方に、EL層を有し、
前記EL層の上方に、第2の金属膜を有する発光装置であって、
前記第3の絶縁膜は、コンタクトホールを有し、
前記第1の金属膜は、前記コンタクトホールを介して前記金属配線と電気的に接続され、
前記透明導電膜は、前記コンタクトホールに前記透明導電膜を設けることにより生じた凹部を有し、
前記第4の絶縁膜は、樹脂を有し、
前記第4の絶縁膜は、前記凹部を完全に埋めており、
前記第4の絶縁膜は、前記コンタクトホールにおいて、前記透明導電膜表面よりも盛り上がった部分を有し、
前記EL層の光は前記第1の金属膜で反射することができ、かつ前記第2の金属膜を透過して放射されることを特徴とする発光装置。 - プラスチック基板の上方に、シリコン膜を有し、
前記シリコン膜の上方に、第1の絶縁膜を有し、
前記第1の絶縁膜の上方に、ゲート電極を有し、
前記ゲート電極の上方に、第2の絶縁膜を有し、
前記第2の絶縁膜の上方に、金属配線を有し、
前記金属配線の上方に、第3の絶縁膜を有し、
前記第3の絶縁膜の上方に、第1の金属膜を有し、
前記第1の金属膜の上方に、透明導電膜を有し、
前記透明導電膜の上方に、第4の絶縁膜を有し、
前記透明導電膜の上方及び前記第4の絶縁膜の上方に、EL層を有し、
前記EL層の上方に、第2の金属膜を有する発光装置であって、
前記第3の絶縁膜は、コンタクトホールを有し、
前記第1の金属膜は、前記コンタクトホールを介して前記金属配線と電気的に接続され、
前記透明導電膜は、前記コンタクトホールに前記透明導電膜を設けることにより生じた凹部を有し、
前記第4の絶縁膜は、樹脂を有し、
前記第4の絶縁膜は、前記凹部を完全に埋めており、
前記第4の絶縁膜は、前記コンタクトホールにおいて、前記透明導電膜表面よりも盛り上がった部分を有し、
前記第4の絶縁膜は、平坦な上面を有し、
前記EL層の光は前記第1の金属膜で反射することができ、かつ前記第2の金属膜を透過して放射されることを特徴とする発光装置。 - プラスチック基板の上方に、シリコン膜を有し、
前記シリコン膜の上方に、第1の絶縁膜を有し、
前記第1の絶縁膜の上方に、ゲート電極を有し、
前記ゲート電極の上方に、第2の絶縁膜を有し、
前記第2の絶縁膜の上方に、金属配線を有し、
前記金属配線の上方に、第3の絶縁膜を有し、
前記第3の絶縁膜の上方に、第1の金属膜を有し、
前記第1の金属膜の上方に、透明導電膜を有し、
前記透明導電膜の上方に、第4の絶縁膜を有し、
前記透明導電膜の上方及び前記第4の絶縁膜の上方に、EL層を有し、
前記EL層の上方に、第2の金属膜を有する発光装置であって、
前記第3の絶縁膜は、コンタクトホールを有し、
前記第1の金属膜は、前記コンタクトホールを介して前記金属配線と電気的に接続され、
前記透明導電膜は、前記コンタクトホールに前記透明導電膜を設けることにより生じた凹部を有し、
前記第4の絶縁膜は、樹脂を有し、
前記第4の絶縁膜は、前記凹部を完全に埋めており、
前記第4の絶縁膜は、前記コンタクトホールにおいて、前記透明導電膜表面よりも盛り上がった部分を有し、
前記第4の絶縁膜は、平坦な上面を有し、
前記第4の絶縁膜は、傾斜した端部を有し、
前記EL層の光は前記第1の金属膜で反射することができ、かつ前記第2の金属膜を透過して放射されることを特徴とする発光装置。
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EP (4) | EP1703568A3 (ja) |
JP (11) | JP2009301058A (ja) |
KR (7) | KR100857726B1 (ja) |
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TW (1) | TW550832B (ja) |
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