JP4758163B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP4758163B2 JP4758163B2 JP2005216744A JP2005216744A JP4758163B2 JP 4758163 B2 JP4758163 B2 JP 4758163B2 JP 2005216744 A JP2005216744 A JP 2005216744A JP 2005216744 A JP2005216744 A JP 2005216744A JP 4758163 B2 JP4758163 B2 JP 4758163B2
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- film
- emitting device
- light
- insulating film
- light emitting
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- 239000010408 film Substances 0.000 claims description 181
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 238000005401 electroluminescence Methods 0.000 description 98
- 239000010410 layer Substances 0.000 description 53
- 239000000758 substrate Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000005984 hydrogenation reaction Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- DTZWGKCFKSJGPK-VOTSOKGWSA-N (e)-2-(2-methyl-6-(2-(1,1,7,7-tetramethyl-1,2,3,5,6,7-hexahydropyrido[3,2,1-ij]quinolin-9-yl)vinyl)-4h-pyran-4-ylidene)malononitrile Chemical compound O1C(C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 DTZWGKCFKSJGPK-VOTSOKGWSA-N 0.000 description 1
- NBYLBWHHTUWMER-UHFFFAOYSA-N 2-Methylquinolin-8-ol Chemical class C1=CC=C(O)C2=NC(C)=CC=C21 NBYLBWHHTUWMER-UHFFFAOYSA-N 0.000 description 1
- YLYPIBBGWLKELC-RMKNXTFCSA-N 2-[2-[(e)-2-[4-(dimethylamino)phenyl]ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-RMKNXTFCSA-N 0.000 description 1
- ZNJRONVKWRHYBF-VOTSOKGWSA-N 4-(dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4h-pyran Chemical compound O1C(C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(CCCN2CCC3)=C2C3=C1 ZNJRONVKWRHYBF-VOTSOKGWSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical class OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
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- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
Claims (12)
- 薄膜トランジスタと、
前記薄膜トランジスタ上に設けられ、コンタクトホールを有する第1の絶縁膜と、
前記第1の絶縁膜上に設けられ、前記コンタクトホールを介して前記薄膜トランジスタと電気的に接続された第1の金属膜と、
前記第1の金属膜上に設けられた透明導電膜と、
前記透明導電膜上のうち、前記コンタクトホール上に、前記第1の絶縁膜上の前記透明導電膜よりも頂上の位置が高く設けられた第2の絶縁膜と、
前記透明導電膜上および前記第2の絶縁膜上に設けられたEL層と、
前記EL層上に設けられた第2の金属膜と、
を有し、
前記コンタクトホールによる前記透明導電膜の凹部は前記第2の絶縁膜により完全に埋め込まれており、
前記第2の金属膜を透過した光が放射されることを特徴とする発光装置。 - 複数の画素と、前記複数の画素間の隙間に設けられた第3の絶縁膜と、を有し、
各画素は、薄膜トランジスタと、
前記薄膜トランジスタ上に設けられ、コンタクトホールを有する第1の絶縁膜と、
前記第1の絶縁膜上に設けられ、前記コンタクトホールを介して前記薄膜トランジスタと電気的に接続された第1の金属膜と、
前記第1の金属膜上に設けられた透明導電膜と、
前記透明導電膜上のうち、前記コンタクトホール上に、前記第1の絶縁膜上の前記透明導電膜よりも頂上の位置が高く設けられた第2の絶縁膜と、
前記透明導電膜上および前記第2の絶縁膜上に設けられたEL層と、
前記EL層上に設けられた第2の金属膜と、を含み、
前記第3の絶縁膜の一部が前記第2の絶縁膜であり、
前記コンタクトホールによる前記透明導電膜の凹部は前記第2の絶縁膜により完全に埋め込まれており、
前記第2の金属膜を透過した光が放射されることを特徴とする発光装置。 - 請求項1又は請求項2において、
前記透明導電膜は酸化物導電膜であることを特徴とする発光装置。 - 請求項1乃至請求項3のいずれか一において、
前記第2の絶縁膜は樹脂からなることを特徴とする発光装置。 - 請求項1乃至請求項4のいずれか一において、
前記第2の金属膜はMgAg膜であることを特徴とする発光装置。 - 請求項1乃至請求項5のいずれか一において、
前記第2の金属膜は前記EL層から発光された光を透過可能な膜厚であることを特徴とする発光装置。 - 請求項1乃至請求項6のいずれか一において、
前記第2の金属膜と電気的に接続された補助電極を有することを特徴とする発光装置。 - 請求項1乃至請求項7のいずれか一において、
前記薄膜トランジスタはトップゲート型であることを特徴とする発光装置。 - 請求項1乃至請求項7のいずれか一において、
前記薄膜トランジスタはボトムゲート型であることを特徴とする発光装置。 - 請求項1乃至請求項9のいずれか一に記載の発光装置を表示部に有することを特徴とするTV放送受信用ディスプレイ。
- 請求項1乃至請求項9のいずれか一に記載の発光装置を表示部に有することを特徴とする対角20インチ乃至対角60インチのTV放送受信用ディスプレイ。
- 請求項1乃至請求項9のいずれか一に記載の発光装置を表示部に有することを特徴とするビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、ナビゲーションシステム、音楽再生装置、パーソナルコンピュータ、ゲーム機器、携帯情報端末または画像再生装置。
Priority Applications (1)
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JP2005216744A JP4758163B2 (ja) | 2000-02-03 | 2005-07-27 | 発光装置 |
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JP2000026879 | 2000-02-03 | ||
JP2000026879 | 2000-02-03 | ||
JP2005216744A JP4758163B2 (ja) | 2000-02-03 | 2005-07-27 | 発光装置 |
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JP2001025449A Division JP3967081B2 (ja) | 2000-02-03 | 2001-02-01 | 発光装置及びその作製方法 |
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JP2009218317A Division JP2009301058A (ja) | 2000-02-03 | 2009-09-23 | 発光装置 |
JP2010230335A Division JP2011009790A (ja) | 2000-02-03 | 2010-10-13 | 発光装置 |
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JP2005327745A5 JP2005327745A5 (ja) | 2006-02-16 |
JP4758163B2 true JP4758163B2 (ja) | 2011-08-24 |
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TWI339442B (en) | 2005-12-09 | 2011-03-21 | Samsung Mobile Display Co Ltd | Flat panel display and method of fabricating the same |
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US5550066A (en) * | 1994-12-14 | 1996-08-27 | Eastman Kodak Company | Method of fabricating a TFT-EL pixel |
JPH10289784A (ja) * | 1997-04-14 | 1998-10-27 | Mitsubishi Chem Corp | 有機電界発光素子 |
JP3520396B2 (ja) * | 1997-07-02 | 2004-04-19 | セイコーエプソン株式会社 | アクティブマトリクス基板と表示装置 |
JPH1154268A (ja) * | 1997-08-08 | 1999-02-26 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンスディスプレイ装置 |
JP3203227B2 (ja) * | 1998-02-27 | 2001-08-27 | 三洋電機株式会社 | 表示装置の製造方法 |
JP3078257B2 (ja) * | 1998-04-15 | 2000-08-21 | ティーディーケイ株式会社 | 有機el表示装置及びその製造方法 |
JP3078267B2 (ja) * | 1998-11-12 | 2000-08-21 | ティーディーケイ株式会社 | 有機el表示装置及びその製造方法 |
JP3078268B2 (ja) * | 1998-11-12 | 2000-08-21 | ティーディーケイ株式会社 | 有機el表示装置及びその製造方法 |
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