JP5204789B2 - めっきピラーパッケージの形成 - Google Patents

めっきピラーパッケージの形成 Download PDF

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Publication number
JP5204789B2
JP5204789B2 JP2009549725A JP2009549725A JP5204789B2 JP 5204789 B2 JP5204789 B2 JP 5204789B2 JP 2009549725 A JP2009549725 A JP 2009549725A JP 2009549725 A JP2009549725 A JP 2009549725A JP 5204789 B2 JP5204789 B2 JP 5204789B2
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JP
Japan
Prior art keywords
substrate
package
seed layer
forming
sacrificial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2009549725A
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English (en)
Japanese (ja)
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JP2010519410A5 (enExample
JP2010519410A (ja
Inventor
ジョン・トレッツァ
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Cufer Asset Ltd LLC
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Cufer Asset Ltd LLC
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Publication of JP2010519410A5 publication Critical patent/JP2010519410A5/ja
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2009549725A 2007-02-16 2008-02-14 めっきピラーパッケージの形成 Expired - Fee Related JP5204789B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/675,731 2007-02-16
US11/675,731 US7670874B2 (en) 2007-02-16 2007-02-16 Plated pillar package formation
PCT/US2008/053994 WO2008101102A1 (en) 2007-02-16 2008-02-14 Plated pillar package formation

Publications (3)

Publication Number Publication Date
JP2010519410A JP2010519410A (ja) 2010-06-03
JP2010519410A5 JP2010519410A5 (enExample) 2010-10-28
JP5204789B2 true JP5204789B2 (ja) 2013-06-05

Family

ID=39363948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009549725A Expired - Fee Related JP5204789B2 (ja) 2007-02-16 2008-02-14 めっきピラーパッケージの形成

Country Status (6)

Country Link
US (2) US7670874B2 (enExample)
EP (1) EP2118924A1 (enExample)
JP (1) JP5204789B2 (enExample)
KR (2) KR20090119901A (enExample)
CN (2) CN101715606A (enExample)
WO (1) WO2008101102A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101023296B1 (ko) * 2009-11-09 2011-03-18 삼성전기주식회사 포스트 범프 형성방법
US8492171B2 (en) 2011-07-21 2013-07-23 International Business Machines Corporation Techniques and structures for testing integrated circuits in flip-chip assemblies
US9087777B2 (en) * 2013-03-14 2015-07-21 United Test And Assembly Center Ltd. Semiconductor packages and methods of packaging semiconductor devices
CN205016513U (zh) * 2014-10-24 2016-02-03 胡迪群 具有封装胶体支撑的电路重新分布层结构
US11037802B2 (en) 2016-12-28 2021-06-15 Intel Corporation Package substrate having copper alloy sputter seed layer and high density interconnects

Family Cites Families (257)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312878A (en) 1965-06-01 1967-04-04 Ibm High speed packaging of miniaturized circuit modules
US3591839A (en) * 1969-08-27 1971-07-06 Siliconix Inc Micro-electronic circuit with novel hermetic sealing structure and method of manufacture
US3720309A (en) 1971-12-07 1973-03-13 Teledyne Inc Method and apparatus for sorting semiconductor dice
US4200272A (en) * 1978-06-12 1980-04-29 Bcira Holder for irregularly shaped articles
NL8006194A (nl) 1980-11-13 1982-06-01 Philips Nv Inrichting voor het gelijktijdig plaatsen van meerdere elektrische en/of elektronische onderdelen op een gedrukte bedradingspaneel.
US4893174A (en) 1985-07-08 1990-01-09 Hitachi, Ltd. High density integration of semiconductor circuit
US4878611A (en) * 1986-05-30 1989-11-07 American Telephone And Telegraph Company, At&T Bell Laboratories Process for controlling solder joint geometry when surface mounting a leadless integrated circuit package on a substrate
JPH07112041B2 (ja) * 1986-12-03 1995-11-29 シャープ株式会社 半導体装置の製造方法
JPS63258060A (ja) * 1987-04-15 1988-10-25 Nec Corp 半導体記憶装置
US5014111A (en) 1987-12-08 1991-05-07 Matsushita Electric Industrial Co., Ltd. Electrical contact bump and a package provided with the same
US4873205A (en) * 1987-12-21 1989-10-10 International Business Machines Corporation Method for providing silicide bridge contact between silicon regions separated by a thin dielectric
US4915494A (en) 1988-07-06 1990-04-10 Harris Corporation Carbon-carbon mirror for space applications
US5089880A (en) 1989-06-07 1992-02-18 Amdahl Corporation Pressurized interconnection system for semiconductor chips
US5179043A (en) 1989-07-14 1993-01-12 The Texas A&M University System Vapor deposited micro heat pipes
US5399898A (en) 1992-07-17 1995-03-21 Lsi Logic Corporation Multi-chip semiconductor arrangements using flip chip dies
US4999077A (en) * 1989-08-31 1991-03-12 Xerox Corporation Method of fabricating full width scanning or imaging arrays from subunits
US5236854A (en) * 1989-12-11 1993-08-17 Yukio Higaki Compound semiconductor device and method for fabrication thereof
US5089055A (en) 1989-12-12 1992-02-18 Takashi Nakamura Survivable solar power-generating systems for use with spacecraft
JPH0831617B2 (ja) 1990-04-18 1996-03-27 三菱電機株式会社 太陽電池及びその製造方法
JP2918307B2 (ja) 1990-08-07 1999-07-12 沖電気工業株式会社 半導体記憶素子
US5166097A (en) 1990-11-26 1992-11-24 The Boeing Company Silicon wafers containing conductive feedthroughs
JPH0817880B2 (ja) 1990-11-28 1996-02-28 帝人株式会社 プレスクッション材
KR940006696B1 (ko) 1991-01-16 1994-07-25 금성일렉트론 주식회사 반도체 소자의 격리막 형성방법
EP0516866A1 (en) 1991-05-03 1992-12-09 International Business Machines Corporation Modular multilayer interwiring structure
US5308784A (en) 1991-10-02 1994-05-03 Samsung Electronics Co., Ltd. Semiconductor device and method for making the same
US5427834A (en) 1991-10-31 1995-06-27 Idm Enterprises Waterproof textile
US5234149A (en) 1992-08-28 1993-08-10 At&T Bell Laboratories Debondable metallic bonding method
US5603847A (en) * 1993-04-07 1997-02-18 Zycon Corporation Annular circuit components coupled with printed circuit board through-hole
US5600103A (en) 1993-04-16 1997-02-04 Kabushiki Kaisha Toshiba Circuit devices and fabrication method of the same
GB9400384D0 (en) 1994-01-11 1994-03-09 Inmos Ltd Circuit connection in an electrical assembly
US5470787A (en) 1994-05-02 1995-11-28 Motorola, Inc. Semiconductor device solder bump having intrinsic potential for forming an extended eutectic region and method for making and using the same
JPH0837395A (ja) 1994-07-21 1996-02-06 Matsushita Electric Ind Co Ltd 半導体チップ供給装置および供給方法
US5523628A (en) 1994-08-05 1996-06-04 Hughes Aircraft Company Apparatus and method for protecting metal bumped integrated circuit chips during processing and for providing mechanical support to interconnected chips
US6093615A (en) * 1994-08-15 2000-07-25 Micron Technology, Inc. Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug
US5587119A (en) * 1994-09-14 1996-12-24 E-Systems, Inc. Method for manufacturing a coaxial interconnect
DE4433845A1 (de) 1994-09-22 1996-03-28 Fraunhofer Ges Forschung Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung
JP2581017B2 (ja) * 1994-09-30 1997-02-12 日本電気株式会社 半導体装置及びその製造方法
US5468655A (en) * 1994-10-31 1995-11-21 Motorola, Inc. Method for forming a temporary attachment between a semiconductor die and a substrate using a metal paste comprising spherical modules
US5598965A (en) 1994-11-03 1997-02-04 Scheu; William E. Integrated circuit, electronic component chip removal and replacement system
DE19514545A1 (de) * 1995-04-20 1996-10-24 Daimler Benz Ag Anordnung von mehreren mit elektronischen Bauelementen versehenen Mikrokühleinrichtungen
US5814889A (en) * 1995-06-05 1998-09-29 Harris Corporation Intergrated circuit with coaxial isolation and method
US5608264A (en) 1995-06-05 1997-03-04 Harris Corporation Surface mountable integrated circuit with conductive vias
US5796591A (en) 1995-06-07 1998-08-18 International Business Machines Corporation Direct chip attach circuit card
US5635014A (en) 1995-06-19 1997-06-03 Gr Systems Press apparatus and methods for fusing overlapped thermoplastic sheet materials
US5874780A (en) * 1995-07-27 1999-02-23 Nec Corporation Method of mounting a semiconductor device to a substrate and a mounted structure
US5872051A (en) 1995-08-02 1999-02-16 International Business Machines Corporation Process for transferring material to semiconductor chip conductive pads using a transfer substrate
JP3498877B2 (ja) 1995-12-05 2004-02-23 株式会社東芝 半導体製造装置および半導体装置の製造方法
JP2739855B2 (ja) 1995-12-14 1998-04-15 日本電気株式会社 半導体装置およびその製造方法
US5973396A (en) 1996-02-16 1999-10-26 Micron Technology, Inc. Surface mount IC using silicon vias in an area array format or same size as die array
US6310484B1 (en) 1996-04-01 2001-10-30 Micron Technology, Inc. Semiconductor test interconnect with variable flexure contacts
US5872338A (en) 1996-04-10 1999-02-16 Prolinx Labs Corporation Multilayer board having insulating isolation rings
US5793116A (en) 1996-05-29 1998-08-11 Mcnc Microelectronic packaging using arched solder columns
JP2790122B2 (ja) 1996-05-31 1998-08-27 日本電気株式会社 積層回路基板
JP3610999B2 (ja) 1996-06-07 2005-01-19 松下電器産業株式会社 半導体素子の実装方法
GB2316225A (en) 1996-08-06 1998-02-18 Northern Telecom Ltd Semiconductor photodetector packaging
US5916453A (en) * 1996-09-20 1999-06-29 Fujitsu Limited Methods of planarizing structures on wafers and substrates by polishing
US7052941B2 (en) * 2003-06-24 2006-05-30 Sang-Yun Lee Method for making a three-dimensional integrated circuit structure
JP2877108B2 (ja) * 1996-12-04 1999-03-31 日本電気株式会社 半導体装置およびその製造方法
JP3065549B2 (ja) * 1997-01-09 2000-07-17 富士通株式会社 半導体チップ部品の実装方法
JP3176307B2 (ja) * 1997-03-03 2001-06-18 日本電気株式会社 集積回路装置の実装構造およびその製造方法
US5846464A (en) * 1997-03-28 1998-12-08 Mcdonnell Douglas Corporation Method for forming composite parts using reconfigurable modular tooling
JP3234188B2 (ja) * 1997-03-31 2001-12-04 キヤノン株式会社 画像形成装置とその製造方法
JP3920399B2 (ja) 1997-04-25 2007-05-30 株式会社東芝 マルチチップ半導体装置用チップの位置合わせ方法、およびマルチチップ半導体装置の製造方法・製造装置
JPH10335383A (ja) 1997-05-28 1998-12-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US6335571B1 (en) * 1997-07-21 2002-01-01 Miguel Albert Capote Semiconductor flip-chip package and method for the fabrication thereof
JPH11166935A (ja) 1997-09-25 1999-06-22 Canon Inc 光検出または照射用の光プローブと該プローブを備えた近視野光学顕微鏡、及該光プローブの製造方法とその製造に用いる基板
CN100388124C (zh) * 1997-10-31 2008-05-14 三洋化成工业株式会社 调色剂和调色剂粘合剂
US6620731B1 (en) 1997-12-18 2003-09-16 Micron Technology, Inc. Method for fabricating semiconductor components and interconnects with contacts on opposing sides
US6075710A (en) 1998-02-11 2000-06-13 Express Packaging Systems, Inc. Low-cost surface-mount compatible land-grid array (LGA) chip scale package (CSP) for packaging solder-bumped flip chips
US6110760A (en) 1998-02-12 2000-08-29 Micron Technology, Inc. Methods of forming electrically conductive interconnections and electrically interconnected substrates
JP3102405B2 (ja) 1998-02-13 2000-10-23 日本電気株式会社 半導体装置の製造方法
US5962922A (en) * 1998-03-18 1999-10-05 Wang; Bily Cavity grid array integrated circuit package
US6222276B1 (en) * 1998-04-07 2001-04-24 International Business Machines Corporation Through-chip conductors for low inductance chip-to-chip integration and off-chip connections
EP0951068A1 (en) * 1998-04-17 1999-10-20 Interuniversitair Micro-Elektronica Centrum Vzw Method of fabrication of a microstructure having an inside cavity
TW434756B (en) 1998-06-01 2001-05-16 Hitachi Ltd Semiconductor device and its manufacturing method
US6399426B1 (en) 1998-07-21 2002-06-04 Miguel Albert Capote Semiconductor flip-chip package and method for the fabrication thereof
US7107666B2 (en) 1998-07-23 2006-09-19 Bh Electronics Method of manufacturing an ultra-miniature magnetic device
US6118181A (en) 1998-07-29 2000-09-12 Agilent Technologies, Inc. System and method for bonding wafers
US6316786B1 (en) * 1998-08-29 2001-11-13 International Business Machines Corporation Organic opto-electronic devices
US6121576A (en) 1998-09-02 2000-09-19 Micron Technology, Inc. Method and process of contact to a heat softened solder ball array
US6380023B2 (en) 1998-09-02 2002-04-30 Micron Technology, Inc. Methods of forming contacts, methods of contacting lines, methods of operating integrated circuitry, and integrated circuits
US6122187A (en) * 1998-11-23 2000-09-19 Micron Technology, Inc. Stacked integrated circuits
JP4590052B2 (ja) 1998-12-04 2010-12-01 キヤノン株式会社 太陽電池屋根の構造、太陽光発電装置及び建築物
JP3847494B2 (ja) 1998-12-14 2006-11-22 シャープ株式会社 二次元画像検出器の製造方法
JP2000223653A (ja) 1999-02-02 2000-08-11 Rohm Co Ltd チップ・オン・チップ構造の半導体装置およびそれに用いる半導体チップ
US6410415B1 (en) 1999-03-23 2002-06-25 Polymer Flip Chip Corporation Flip chip mounting technique
US6207475B1 (en) 1999-03-30 2001-03-27 Industrial Technology Research Institute Method for dispensing underfill and devices formed
AU4473400A (en) 1999-04-20 2000-11-02 Ian Coats Maccoll Waterproof blanket with integrated storage bag
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US6225206B1 (en) 1999-05-10 2001-05-01 International Business Machines Corporation Flip chip C4 extension structure and process
JP2000349101A (ja) 1999-06-07 2000-12-15 Lintec Corp 転写用テープおよびその使用方法
JP3518434B2 (ja) * 1999-08-11 2004-04-12 株式会社日立製作所 マルチチップモジュールの冷却装置
US6316737B1 (en) * 1999-09-09 2001-11-13 Vlt Corporation Making a connection between a component and a circuit board
US6135635A (en) 1999-10-07 2000-10-24 Miller; Jeffrey Convertible bag and barrier device
JP2001129800A (ja) 1999-11-04 2001-05-15 Japan Science & Technology Corp フィードスルー付き基板とその製造方法
US6283693B1 (en) 1999-11-12 2001-09-04 General Semiconductor, Inc. Method and apparatus for semiconductor chip handling
US6756594B2 (en) 2000-01-28 2004-06-29 California Institute Of Technology Micromachined tuned-band hot bolometer emitter
JP3386029B2 (ja) * 2000-02-09 2003-03-10 日本電気株式会社 フリップチップ型半導体装置及びその製造方法
US6513236B2 (en) * 2000-02-18 2003-02-04 Matsushita Electric Industrial Co., Ltd. Method of manufacturing bump-component mounted body and device for manufacturing the same
JP3394947B2 (ja) 2000-02-24 2003-04-07 日東電工株式会社 粘着テープおよび粘着テープ基材
JP3979791B2 (ja) 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
KR100817646B1 (ko) * 2000-03-10 2008-03-27 스태츠 칩팩, 엘티디. 플립칩 상호연결 구조물
US6446317B1 (en) 2000-03-31 2002-09-10 Intel Corporation Hybrid capacitor and method of fabrication therefor
US6484776B1 (en) 2000-04-07 2002-11-26 Northrop Grumman Corporation System for constructing a laminate
EP1223612A4 (en) 2000-05-12 2005-06-29 Matsushita Electric Industrial Co Ltd PRINTED CIRCUIT BOARD FOR MOUNTING A SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING THE MOUNTING STRUCTURE THEREOF
JP2001338947A (ja) * 2000-05-26 2001-12-07 Nec Corp フリップチップ型半導体装置及びその製造方法
KR100398716B1 (ko) 2000-06-12 2003-09-19 가부시키가이샤 히타치세이사쿠쇼 반도체 모듈 및 반도체 장치를 접속한 회로 기판
JP2002004077A (ja) * 2000-06-20 2002-01-09 Kyushu Hitachi Maxell Ltd 電鋳製品およびその製造方法
JP2002289768A (ja) * 2000-07-17 2002-10-04 Rohm Co Ltd 半導体装置およびその製法
US6938783B2 (en) 2000-07-26 2005-09-06 Amerasia International Technology, Inc. Carrier tape
TW525417B (en) 2000-08-11 2003-03-21 Ind Tech Res Inst Composite through hole structure
US7271491B1 (en) 2000-08-31 2007-09-18 Micron Technology, Inc. Carrier for wafer-scale package and wafer-scale package including the carrier
US6577013B1 (en) * 2000-09-05 2003-06-10 Amkor Technology, Inc. Chip size semiconductor packages with stacked dies
US6720245B2 (en) 2000-09-07 2004-04-13 Interuniversitair Microelektronica Centrum (Imec) Method of fabrication and device for electromagnetic-shielding structures in a damascene-based interconnect scheme
US6627477B1 (en) * 2000-09-07 2003-09-30 International Business Machines Corporation Method of assembling a plurality of semiconductor devices having different thickness
US7262082B1 (en) 2000-10-13 2007-08-28 Bridge Semiconductor Corporation Method of making a three-dimensional stacked semiconductor package with a metal pillar and a conductive interconnect in an encapsulant aperture
US6740576B1 (en) * 2000-10-13 2004-05-25 Bridge Semiconductor Corporation Method of making a contact terminal with a plated metal peripheral sidewall portion for a semiconductor chip assembly
JP2002134545A (ja) * 2000-10-26 2002-05-10 Oki Electric Ind Co Ltd 半導体集積回路チップ及び基板、並びにその製造方法
JP4608763B2 (ja) * 2000-11-09 2011-01-12 日本電気株式会社 半導体装置
EP1217656A1 (en) 2000-12-20 2002-06-26 STMicroelectronics S.r.l. Process for manufacturing components in a semiconductor material with reduction in the starting wafer thickness
US6557192B2 (en) 2001-01-02 2003-05-06 Patent Category Corp. Sleeping bag with enhancements
US6277711B1 (en) * 2001-01-08 2001-08-21 Jiahn-Chang Wu Semiconductor matrix formation
US6512300B2 (en) * 2001-01-10 2003-01-28 Raytheon Company Water level interconnection
US6543674B2 (en) * 2001-02-06 2003-04-08 Fujitsu Limited Multilayer interconnection and method
US6429045B1 (en) * 2001-02-07 2002-08-06 International Business Machines Corporation Structure and process for multi-chip chip attach with reduced risk of electrostatic discharge damage
US7233028B2 (en) 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
JP2002260753A (ja) * 2001-03-05 2002-09-13 Kyushu Hitachi Maxell Ltd バンプ付きシートの製造方法
US7242099B2 (en) 2001-03-05 2007-07-10 Megica Corporation Chip package with multiple chips connected by bumps
JP4118029B2 (ja) 2001-03-09 2008-07-16 富士通株式会社 半導体集積回路装置とその製造方法
JP2002289900A (ja) 2001-03-23 2002-10-04 Canon Inc 集光型太陽電池モジュール及び集光型太陽光発電システム
JP2002289770A (ja) 2001-03-27 2002-10-04 Nec Kansai Ltd 半導体装置
WO2002084631A1 (en) 2001-04-11 2002-10-24 Sony Corporation Element transfer method, element arrangmenet method using the same, and image display apparatus production method
TW561805B (en) * 2001-05-16 2003-11-11 Unimicron Technology Corp Fabrication method of micro-via
JP2002359386A (ja) 2001-05-31 2002-12-13 Canon Inc 太陽電池ストリング、太陽電池アレイ及び太陽光発電システム
US6413851B1 (en) * 2001-06-12 2002-07-02 Advanced Interconnect Technology, Ltd. Method of fabrication of barrier cap for under bump metal
FR2826153B1 (fr) 2001-06-14 2004-05-28 A S K Procede de connexion d'une puce a une antenne d'un dispositif d'identification par radio-frequence du type carte a puce sans contact
US6451626B1 (en) 2001-07-27 2002-09-17 Charles W.C. Lin Three-dimensional stacked semiconductor package
US6765287B1 (en) 2001-07-27 2004-07-20 Charles W. C. Lin Three-dimensional stacked semiconductor package
US7218349B2 (en) 2001-08-09 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6747347B2 (en) * 2001-08-30 2004-06-08 Micron Technology, Inc. Multi-chip electronic package and cooling system
US6635960B2 (en) 2001-08-30 2003-10-21 Micron Technology, Inc. Angled edge connections for multichip structures
US6686654B2 (en) 2001-08-31 2004-02-03 Micron Technology, Inc. Multiple chip stack structure and cooling system
US6881609B2 (en) 2001-09-07 2005-04-19 Peter C. Salmon Component connections using bumps and wells
EP1434261B1 (en) 2001-09-12 2010-03-31 Nikkiso Co., Ltd. Circuit device mounting method and press
DE20115945U1 (de) 2001-09-27 2001-12-13 Thomas Josef Heimbach GmbH & Co., 52353 Düren Preßpolster
JP4917225B2 (ja) 2001-09-28 2012-04-18 ローム株式会社 半導体装置
US6750516B2 (en) * 2001-10-18 2004-06-15 Hewlett-Packard Development Company, L.P. Systems and methods for electrically isolating portions of wafers
US6717045B2 (en) 2001-10-23 2004-04-06 Leon L. C. Chen Photovoltaic array module design for solar electric power generation systems
JP3976541B2 (ja) 2001-10-23 2007-09-19 富士通株式会社 半導体チップの剥離方法及び装置
ITTO20011038A1 (it) 2001-10-30 2003-04-30 St Microelectronics Srl Procedimento per la fabbricazione di una fetta semiconduttrice integrante dispositivi elettronici e una struttura per il disaccoppiamento el
US6768210B2 (en) * 2001-11-01 2004-07-27 Texas Instruments Incorporated Bumpless wafer scale device and board assembly
JP3495727B2 (ja) 2001-11-07 2004-02-09 新光電気工業株式会社 半導体パッケージおよびその製造方法
US6617507B2 (en) 2001-11-16 2003-09-09 First Solar, Llc Photovoltaic array
JP3875077B2 (ja) * 2001-11-16 2007-01-31 富士通株式会社 電子デバイス及びデバイス接続方法
US6599778B2 (en) * 2001-12-19 2003-07-29 International Business Machines Corporation Chip and wafer integration process using vertical connections
US6674647B2 (en) * 2002-01-07 2004-01-06 International Business Machines Corporation Low or no-force bump flattening structure and method
US6590278B1 (en) 2002-01-08 2003-07-08 International Business Machines Corporation Electronic package
KR100415282B1 (ko) 2002-02-06 2004-01-16 삼성전자주식회사 반도체 소자용 듀얼 다이 접착 장치
US6635970B2 (en) 2002-02-06 2003-10-21 International Business Machines Corporation Power distribution design method for stacked flip-chip packages
US6606251B1 (en) 2002-02-07 2003-08-12 Cooligy Inc. Power conditioning module
US6889427B2 (en) 2002-02-15 2005-05-10 Freescale Semiconductor, Inc. Process for disengaging semiconductor die from an adhesive film
US6770822B2 (en) 2002-02-22 2004-08-03 Bridgewave Communications, Inc. High frequency device packages and methods
US7098072B2 (en) * 2002-03-01 2006-08-29 Agng, Llc Fluxless assembly of chip size semiconductor packages
US6660548B2 (en) 2002-03-27 2003-12-09 Intel Corporation Packaging of multiple active optical devices
KR100446316B1 (ko) * 2002-03-30 2004-09-01 주식회사 하이닉스반도체 반도체장치의 콘택플러그 형성 방법
EP1351288B1 (en) 2002-04-05 2015-10-28 STMicroelectronics Srl Process for manufacturing an insulated interconnection through a body of semiconductor material and corresponding semiconductor device
US7135777B2 (en) 2002-05-03 2006-11-14 Georgia Tech Research Corporation Devices having compliant wafer-level input/output interconnections and packages using pillars and methods of fabrication thereof
US6939789B2 (en) * 2002-05-13 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of wafer level chip scale packaging
US6930032B2 (en) 2002-05-14 2005-08-16 Freescale Semiconductor, Inc. Under bump metallurgy structural design for high reliability bumped packages
US6689949B2 (en) 2002-05-17 2004-02-10 United Innovations, Inc. Concentrating photovoltaic cavity converters for extreme solar-to-electric conversion efficiencies
KR100449948B1 (ko) * 2002-05-18 2004-09-30 주식회사 하이닉스반도체 콘택저항을 감소시킨 콘택플러그 형성방법
EP1369929B1 (en) * 2002-05-27 2016-08-03 STMicroelectronics Srl A process for manufacturing encapsulated optical sensors, and an encapsulated optical sensor manufactured using this process
US6704953B2 (en) 2002-06-05 2004-03-16 Zelma Lee Fishman Combination sleeping bag and mat for infants and children
SG111069A1 (en) 2002-06-18 2005-05-30 Micron Technology Inc Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods
US6596640B1 (en) * 2002-06-21 2003-07-22 Intel Corporation Method of forming a raised contact for a substrate
JP3679786B2 (ja) 2002-06-25 2005-08-03 松下電器産業株式会社 半導体装置の製造方法
US6919642B2 (en) 2002-07-05 2005-07-19 Industrial Technology Research Institute Method for bonding IC chips to substrates incorporating dummy bumps and non-conductive adhesive and structures formed
US7023347B2 (en) 2002-08-02 2006-04-04 Symbol Technologies, Inc. Method and system for forming a die frame and for transferring dies therewith
JP2004080221A (ja) * 2002-08-13 2004-03-11 Fujitsu Media Device Kk 弾性波デバイス及びその製造方法
US6818818B2 (en) 2002-08-13 2004-11-16 Esmond T. Goei Concentrating solar energy receiver
US6903442B2 (en) * 2002-08-29 2005-06-07 Micron Technology, Inc. Semiconductor component having backside pin contacts
US6986377B2 (en) 2002-09-30 2006-01-17 Illinois Tool Works Inc. Method and apparatus for guiding and sealing split-flange zipper tape to bag making film
SG111972A1 (en) 2002-10-17 2005-06-29 Agency Science Tech & Res Wafer-level package for micro-electro-mechanical systems
US6929974B2 (en) * 2002-10-18 2005-08-16 Motorola, Inc. Feedthrough design and method for a hermetically sealed microdevice
JP3908146B2 (ja) * 2002-10-28 2007-04-25 シャープ株式会社 半導体装置及び積層型半導体装置
GB0227009D0 (en) 2002-11-19 2002-12-24 Worlds Apart Ltd Convertible blanket
JP4342174B2 (ja) 2002-12-27 2009-10-14 新光電気工業株式会社 電子デバイス及びその製造方法
JP3818651B2 (ja) 2002-12-30 2006-09-06 デジコ総合管理株式会社 太陽光発電システム
US7015590B2 (en) 2003-01-10 2006-03-21 Samsung Electronics Co., Ltd. Reinforced solder bump structure and method for forming a reinforced solder bump
JP4082242B2 (ja) 2003-03-06 2008-04-30 ソニー株式会社 素子転写方法
JP4139713B2 (ja) * 2003-03-12 2008-08-27 シャープ株式会社 補強板貼り付け装置および貼り付け方法
SE526366C3 (sv) * 2003-03-21 2005-10-26 Silex Microsystems Ab Elektriska anslutningar i substrat
US7013509B2 (en) 2003-03-28 2006-03-21 Hickman Robert J Easy on/easy off pillow and blanket cover
US6841883B1 (en) 2003-03-31 2005-01-11 Micron Technology, Inc. Multi-dice chip scale semiconductor components and wafer level methods of fabrication
ITTO20030269A1 (it) 2003-04-08 2004-10-09 St Microelectronics Srl Procedimento per la fabbricazione di un dispositivo
JP4419049B2 (ja) 2003-04-21 2010-02-24 エルピーダメモリ株式会社 メモリモジュール及びメモリシステム
JP4104490B2 (ja) * 2003-05-21 2008-06-18 オリンパス株式会社 半導体装置の製造方法
TWI229930B (en) 2003-06-09 2005-03-21 Advanced Semiconductor Eng Chip structure
US20050048766A1 (en) * 2003-08-31 2005-03-03 Wen-Chieh Wu Method for fabricating a conductive plug in integrated circuit
US20050046034A1 (en) 2003-09-03 2005-03-03 Micron Technology, Inc. Apparatus and method for high density multi-chip structures
US6897125B2 (en) 2003-09-17 2005-05-24 Intel Corporation Methods of forming backside connections on a wafer stack
TWI251313B (en) * 2003-09-26 2006-03-11 Seiko Epson Corp Intermediate chip module, semiconductor device, circuit board, and electronic device
US20050104027A1 (en) * 2003-10-17 2005-05-19 Lazarev Pavel I. Three-dimensional integrated circuit with integrated heat sinks
KR101237172B1 (ko) 2003-11-10 2013-02-25 스태츠 칩팩, 엘티디. 범프-온-리드 플립 칩 인터커넥션
US6861336B1 (en) * 2003-11-30 2005-03-01 Union Semiconductor Technology Corporation Die thinning methods
US7276787B2 (en) * 2003-12-05 2007-10-02 International Business Machines Corporation Silicon chip carrier with conductive through-vias and method for fabricating same
US7230318B2 (en) * 2003-12-24 2007-06-12 Agency For Science, Technology And Research RF and MMIC stackable micro-modules
US6992824B1 (en) 2003-12-27 2006-01-31 Motamedi Manouchehr E Efficient wave propagation for terahertz imaging and sensing
KR100538158B1 (ko) 2004-01-09 2005-12-22 삼성전자주식회사 웨이퍼 레벨 적층 칩 접착 방법
JP4204989B2 (ja) * 2004-01-30 2009-01-07 新光電気工業株式会社 半導体装置及びその製造方法
TWI254995B (en) * 2004-01-30 2006-05-11 Phoenix Prec Technology Corp Presolder structure formed on semiconductor package substrate and method for fabricating the same
FR2867308B1 (fr) * 2004-03-02 2006-05-19 Atmel Grenoble Sa Circuit integre avec diode de lecture de tres petites dimensions
JP4074862B2 (ja) 2004-03-24 2008-04-16 ローム株式会社 半導体装置の製造方法、半導体装置、および半導体チップ
JP3875240B2 (ja) 2004-03-31 2007-01-31 株式会社東芝 電子部品の製造方法
US7144759B1 (en) 2004-04-02 2006-12-05 Celerity Research Pte. Ltd. Technology partitioning for advanced flip-chip packaging
US20050245059A1 (en) * 2004-04-30 2005-11-03 Yuan Yuan Method for making an interconnect pad
TWI230989B (en) 2004-05-05 2005-04-11 Megic Corp Chip bonding method
JP4119866B2 (ja) 2004-05-12 2008-07-16 富士通株式会社 半導体装置
JP4955935B2 (ja) 2004-05-25 2012-06-20 キヤノン株式会社 貫通孔形成方法および半導体装置の製造方法
JP4441328B2 (ja) 2004-05-25 2010-03-31 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US20050262634A1 (en) 2004-05-28 2005-12-01 Gottlieb Patricia R Combination convertible blanket and pillow
JP2006019455A (ja) 2004-06-30 2006-01-19 Nec Electronics Corp 半導体装置およびその製造方法
WO2006014411A1 (en) 2004-07-02 2006-02-09 Strasbaugh Method and system for processing wafers
US7129567B2 (en) 2004-08-31 2006-10-31 Micron Technology, Inc. Substrate, semiconductor die, multichip module, and system including a via structure comprising a plurality of conductive elements
US7109068B2 (en) * 2004-08-31 2006-09-19 Micron Technology, Inc. Through-substrate interconnect fabrication methods
US7157310B2 (en) * 2004-09-01 2007-01-02 Micron Technology, Inc. Methods for packaging microfeature devices and microfeature devices formed by such methods
US7326629B2 (en) 2004-09-10 2008-02-05 Agency For Science, Technology And Research Method of stacking thin substrates by transfer bonding
JP4966487B2 (ja) 2004-09-29 2012-07-04 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP4813035B2 (ja) * 2004-10-01 2011-11-09 新光電気工業株式会社 貫通電極付基板の製造方法
US9466595B2 (en) 2004-10-04 2016-10-11 Intel Corporation Fabrication of stacked die and structures formed thereby
JP2006135277A (ja) * 2004-10-06 2006-05-25 North:Kk 配線基板と、その製造方法
US20060070704A1 (en) 2004-10-06 2006-04-06 Tropicana Products, Inc. Vaccum support and transfer of flexible material
KR100498708B1 (ko) 2004-11-08 2005-07-01 옵토팩 주식회사 반도체 소자용 전자패키지 및 그 패키징 방법
US20060125084A1 (en) * 2004-12-15 2006-06-15 Fazzio Ronald S Integration of micro-electro mechanical systems and active circuitry
US7396732B2 (en) * 2004-12-17 2008-07-08 Interuniversitair Microelektronica Centrum Vzw (Imec) Formation of deep trench airgaps and related applications
US7264984B2 (en) * 2004-12-21 2007-09-04 Touchdown Technologies, Inc. Process for forming MEMS
US7390735B2 (en) 2005-01-07 2008-06-24 Teledyne Licensing, Llc High temperature, stable SiC device interconnects and packages having low thermal resistance
JP4057017B2 (ja) 2005-01-31 2008-03-05 富士通株式会社 電子装置及びその製造方法
US7442570B2 (en) * 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
US7371676B2 (en) 2005-04-08 2008-05-13 Micron Technology, Inc. Method for fabricating semiconductor components with through wire interconnects
US20060252262A1 (en) 2005-05-03 2006-11-09 Rockwell Scientific Licensing, Llc Semiconductor structures having via structures between planar frontside and backside surfaces and methods of fabricating the same
TW200644165A (en) 2005-05-04 2006-12-16 Icemos Technology Corp Silicon wafer having through-wafer vias
US7303976B2 (en) 2005-05-10 2007-12-04 Hewlett-Packard Development Company, L.P. Wafer bonding method
US7170183B1 (en) 2005-05-13 2007-01-30 Amkor Technology, Inc. Wafer level stacked package
US20060264029A1 (en) * 2005-05-23 2006-11-23 Intel Corporation Low inductance via structures
EP1732116B1 (en) 2005-06-08 2017-02-01 Imec Methods for bonding and micro-electronic devices produced according to such methods
US7687400B2 (en) 2005-06-14 2010-03-30 John Trezza Side stacking apparatus and method
US20060281303A1 (en) 2005-06-14 2006-12-14 John Trezza Tack & fuse chip bonding
US7534722B2 (en) * 2005-06-14 2009-05-19 John Trezza Back-to-front via process
US7767493B2 (en) 2005-06-14 2010-08-03 John Trezza Post & penetration interconnection
US7838997B2 (en) 2005-06-14 2010-11-23 John Trezza Remote chip attachment
US7946331B2 (en) * 2005-06-14 2011-05-24 Cufer Asset Ltd. L.L.C. Pin-type chip tooling
US7488680B2 (en) 2005-08-30 2009-02-10 International Business Machines Corporation Conductive through via process for electronic device carriers
US7528494B2 (en) 2005-11-03 2009-05-05 International Business Machines Corporation Accessible chip stack and process of manufacturing thereof
US20080017407A1 (en) * 2006-07-24 2008-01-24 Ibiden Co., Ltd. Interposer and electronic device using the same
US7982307B2 (en) 2006-11-22 2011-07-19 Agere Systems Inc. Integrated circuit chip assembly having array of thermally conductive features arranged in aperture of circuit substrate
US20080284037A1 (en) 2007-05-15 2008-11-20 Andry Paul S Apparatus and Methods for Constructing Semiconductor Chip Packages with Silicon Space Transformer Carriers

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