JP5071976B2 - 安定かつ反復可能なプラズマイオン注入方法 - Google Patents

安定かつ反復可能なプラズマイオン注入方法 Download PDF

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Publication number
JP5071976B2
JP5071976B2 JP2007515133A JP2007515133A JP5071976B2 JP 5071976 B2 JP5071976 B2 JP 5071976B2 JP 2007515133 A JP2007515133 A JP 2007515133A JP 2007515133 A JP2007515133 A JP 2007515133A JP 5071976 B2 JP5071976 B2 JP 5071976B2
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plasma
anode
substrate
implantation
pulse
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JP2008500729A (ja
JP2008500729A5 (enExample
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ワルター、スティーブン・アール
ファン、ツィウェイ
トッコ、ジャスティン
エリス、カールトン、エフ、ザ・サード
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バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2007515133A 2004-05-24 2005-05-09 安定かつ反復可能なプラズマイオン注入方法 Expired - Fee Related JP5071976B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/852,643 2004-05-24
US10/852,643 US7396746B2 (en) 2004-05-24 2004-05-24 Methods for stable and repeatable ion implantation
PCT/US2005/016219 WO2005115104A2 (en) 2004-05-24 2005-05-09 Methods for stable and repeatable plasma ion implantation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012079462A Division JP2012178571A (ja) 2004-05-24 2012-03-30 安定かつ反復可能なプラズマイオン注入方法及び装置

Publications (3)

Publication Number Publication Date
JP2008500729A JP2008500729A (ja) 2008-01-10
JP2008500729A5 JP2008500729A5 (enExample) 2008-06-26
JP5071976B2 true JP5071976B2 (ja) 2012-11-14

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JP2007515133A Expired - Fee Related JP5071976B2 (ja) 2004-05-24 2005-05-09 安定かつ反復可能なプラズマイオン注入方法
JP2012079462A Pending JP2012178571A (ja) 2004-05-24 2012-03-30 安定かつ反復可能なプラズマイオン注入方法及び装置

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US (1) US7396746B2 (enExample)
JP (2) JP5071976B2 (enExample)
KR (1) KR101126376B1 (enExample)
CN (2) CN1998062B (enExample)
TW (1) TWI345265B (enExample)
WO (1) WO2005115104A2 (enExample)

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