CN101892463A - 稳定的和可重复的等离子体离子注入的方法 - Google Patents
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Abstract
一种用于衬底的等离子体离子注入的方法包括提供等离子体离子注入系统,所述等离子体离子注入系统具有工艺室(10)、用于在所述工艺室中产生等离子体(40)的源、用于在所述工艺室中承托衬底(20)的台板(14)、与所述台板隔开的阳极(24)、和用于产生将离子从所述等离子体向着所述衬底加速的注入脉冲的脉冲源(30)。在一方面,改变注入工艺的参数以至少部分地补偿被注入的离子和所述衬底之间的相互作用的非期望效应。例如,在所述注入工艺期间,可以改变剂量率、离子能量或两者。在另一方面,预处理步骤包括:将离子从所述等离子体向所述阳极加速以引起源于所述阳极的二次电子的发射,和将所述二次电子从所述阳极向衬底加速以便预处理所述衬底。
Description
技术领域
本发明涉及衬底的等离子体离子注入的系统和方法,更特别地,涉及至少部分地补偿被注入的离子和衬底之间的相互作用的非期望效应的方法。
背景技术
离子注入是将电导率变化的杂质引入半导体晶片的标准技术。在传统的射束线(beamline)离子注入系统中,所需的杂质材料在离子源中被离子化,离子被加速以形成规定能量的离子束,并且离子束被指引到晶片的表面。离子束中的高能离子透入半导体材料的本体,并嵌入半导体材料的晶格中以形成所需电导率的区。
半导体工业中众所周知的趋势是更小,更高速的器件。特别而言,半导体器件的横向尺度和特征深度都正在降低。掺杂剂材料的注入深度至少部分地由注入半导体晶片的离子的能量来确定。射束线离子注入器被典型地设计用于在相对高的注入能量下高效地工作,而在浅结注入所需的低能量下可能不高效地运转。
已研究了用于在半导体晶片中形成浅结的等离子体掺杂系统。在等离子体掺杂系统中,半导体晶片置于导电台板上,其起到阴极的作用并且位于工艺室中。含有所需掺杂剂材料的可离子化的工艺气体被引入工艺室,且在台板和阳极或室壁之间施加电压脉冲,使得形成等离子体鞘在晶片附近的等离子体。所施加的脉冲使得等离子体中的离子穿过等离子体鞘并被注入晶片。注入的深度与在晶片和阳极之间施加的电压有关。可以实现非常低的注入能量。等离子体掺杂系统在例如1994年10月11日授予Sheng的美国专利No.5,354,381、2000年2月1日授予Liebert等人的美国专利No.6,020,592和2001年2月6日授予Goeckner等人的美国专利No.6,182,604中有描述。
如上所述的等离子体掺杂系统中,所施加的电压脉冲产生等离子体,并将正离子从等离子体向着晶片加速。在称为等离子体浸入系统的其他类型的等离子体系统中,持续的或脉冲的RF能量被施加到工艺室,由此产生持续的或脉冲的等离子体。每隔一段时间,在台板和阳极之间施加可与RF脉冲同步的负电压脉冲,使得等离子体中的正离子向着晶片加速。
待被注入的表面可能以非期望的方式与被注入的离子相互作用。例如,离子注入可造成衬底表面上的绝缘或半绝缘结构的充电。衬底表面上的诸如光致抗蚀剂掩模的膜或层可在注入期间释放气体和改变成分。开始注入时光致抗蚀剂可为绝缘体,而随着注入的进行其可变得更导电。这些效应可导致不稳定的和/或不可重复的注入状况。
处理这些等离子体离子注入中的问题的现有技术方法包括用紫外光预处理光致抗蚀剂或烘焙以减少放气。光致抗蚀剂还可以通过惰性离子种类的等离子体离子注入或通过等离子体浸入来预处理,其中衬底被正偏置以从等离子体中提取电子,这些提取的电子预处理光致抗蚀剂。这些方法在掺杂剂材料的离子注入之前需要额外的工艺步骤,因此降低了处理量。
射束线离子注入系统使用了较低的初始射束流以降低光致抗蚀剂效应。此方法应用于射束线系统且具有如下缺点:改变射束的空间电荷分布并因此影响可取决于瞬时剂量率的注入缺陷产生和注入均一性。射束线方法还可导致电荷中和困难,因为诸如电子流枪的中和系统可能是针对特定射束流条件而优化的。
发明内容
根据本发明的第一方面,提供了衬底的等离子体离子注入的方法。所述方法包括:提供等离子体离子注入系统,所述等离子体离子注入系统包括工艺室、用于在工艺室中产生等离子体的源、用于在工艺室中承托衬底的台板和用于产生将离子从等离子体向着衬底中加速的注入脉冲的脉冲源;根据具有一剂量率的注入工艺的衬底的等离子体离子注入;以及在注入工艺期间改变所述剂量率。
根据本发明的第二方面,提供了衬底的等离子体离子注入的方法。所述方法包括:提供等离子体离子注入系统,所述等离子体离子注入系统包括工艺室、用于在工艺室中产生等离子体的源、用于在工艺室中承托衬底的台板、与台板隔开的阳极和用于产生将离子从等离子体向着衬底中加速的注入脉冲的脉冲源;将离子从等离子体向着阳极加速以引起二次电子从阳极发射;将二次电子从阳极向着衬底加速;以及根据注入工艺的衬底的等离子体离子注入。
根据本发明的第三方面,提供了衬底的等离子体离子注入的方法。所述方法包括:提供等离子体离子注入系统,所述等离子体离子注入系统包括工艺室、用于在工艺室中产生等离子体的源、用于在工艺室中承托衬底的台板和用于产生将离子从等离子体向着衬底中加速的注入脉冲的脉冲源;根据注入工艺的衬底的等离子体离子注入;以及在注入工艺期间调整离子能量,以至少部分地补偿被注入的离子和衬底之间的相互作用的非期望效应。
根据本发明的第四方面,等离子体离子注入系统包括:工艺室;用于在工艺室中产生等离子体的源;用于在工艺室中承托衬底的台板;和用于产生将离子从等离子体向着衬底加速的注入脉冲的脉冲源;以及注入控制器,其被配置用于根据具有一剂量率的注入工艺的衬底的等离子体离子注入并且被配置用于在注入工艺期间改变所述剂量率。
根据本发明的第五方面,等离子体离子注入系统包括:工艺室;用于在工艺室中产生等离子体的源;用于在工艺室中承托衬底的台板;与台板隔开的阳极;用于产生将离子从等离子体向着衬底中加速的注入脉冲的脉冲源;和电源,用于将离子从等离子体向着阳极加速以引起二次电子从阳极发射,并且用于将二次电子从阳极向着衬底加速。
根据本发明的第六方面,等离子体离子注入系统包括:工艺室;用于在工艺室中产生等离子体的源;用于在工艺室中承托衬底的台板;用于产生将离子从等离子体向着衬底中加速的注入脉冲的脉冲源;和注入控制器,其被配置用于根据注入工艺的衬底的等离子体离子注入并且被配置用于在注入工艺期间调整离子能量以至少部分地补偿被注入的离子和衬底之间的相互作用的非期望效应。
附图说明
为更好地理解本发明,参考通过引用结合于此的附图,其中:
图1是等离子体离子注入系统的简化的示意框图;
图2是根据本发明第一实施方式的等离子体离子注入系统的简化的示意框图;
图3是根据本发明第二实施方式的等离子体离子注入系统的简化的示意框图;
图4A是作为剂量的函数的剂量率的曲线图,图示了在衬底的等离子体离子注入期间剂量率的台阶式增加;
图4B是作为剂量的函数的剂量率的曲线图,图示了在衬底的等离子体离子注入期间剂量率的持续增加;
图5是根据本发明第三实施方式的等离子体离子注入系统的简化的示意框图;
图6是根据本发明第四实施方式的等离子体离子注入系统的简化的示意框图;和
图7是根据本发明第四实施方式的衬底的等离子体离子注入方法的流程图。
具体实施方式
适用于实施本发明的等离子体离子注入系统的一个例子示意性地显示于图1中。结合图2-7描述本发明的实施方式。图1-7中同样的元件具有相同的参考标号。
工艺室10限定封闭空间12。位于室10内的台板14提供用于承托诸如半导体晶片20的衬底的表面。晶片20可例如在其周边被夹持到台板14的平坦表面。在一种实施方式中,台板具有用于支撑晶片20的导电的表面。在另一种实施方式中,台板包括用于连接到晶片20的导电的钉(没有显示)。
阳极24位于室10内,与台板14隔开。阳极24可以在由箭头26表示的垂直于台板14的方向上移动。阳极典型地连接到室10的导电的壁,两者都可以接地。在另一种实施方式中,台板14接地,且阳极24被提供负电压的脉冲。在其他的实施方式中,阳极24和台板14都可以相对于地偏置。
晶片20(通过台板14)和阳极24连接到高压脉冲源30,使得晶片20起到阴极的作用。脉冲源30典型地提供幅度为约20~20,000伏、持续时间为约1~200微秒且脉冲重复率为约100Hz~20kHz的脉冲。将理解,这些脉冲参数值仅为示例性的,在本发明的范围内可使用其它的值。
室10的封闭空间12通过可控制的阀32耦合到真空泵34。工艺气体源36通过质量流量控制器38耦合到室10。位于室10内的压力传感器48向控制器46提供指示室压力的信号。控制器46将所感测的室压力与所需的压力输入相比较,并向阀32或质量流量控制器38提供控制信号。控制信号控制阀32或质量流量控制器38,以便使室压力与所需的压力之间的差最小化。真空泵34、阀32、质量流量控制器38、压力传感器48和控制器46组成闭环压力控制系统。压力典型地控制在约1毫托~约500毫托的范围内,但是不局限于此范围。气源36供给含有用于注入工件的所需掺杂剂的可离子化气体。可离子化气体的例子包括BF3、N2、Ar、PH3、AsH3和B2H6。质量流量控制器38调节向室10供给气体的速率。图1所示的配置以所需的流速和恒定的压力提供持续的工艺气体流。优选地调节压力和气体流速以提供可重复的结果。在另一种实施方式中,可以使用由控制器46控制的阀调节气流,而阀32保持在固定位置。这种设置称为上游压力控制。还可以使用其他的调节气体压力的配置。
等离子体掺杂系统可包括连接到空心阴极脉冲源56的空心阴极54。在一种实施方式中,空心阴极54包括导电的空心柱体,所述空心柱体围绕阳极24和台板14之间的空间。可以在需要非常低离子能量的应用中使用空心阴极。特别而言,空心阴极脉冲源56提供足以在室12内形成等离子体的脉冲电压,且脉冲源30建立所需的注入电压。关于使用空心阴极的其它细节在上述美国专利No.6,182,604中提供,该专利通过引用结合于此。
一个或多个法拉第杯可与台板14邻近地放置,以便测量注入晶片20的离子剂量。在图1的实施方式中,法拉第杯50、52等以相等的间距围绕在晶片20的外围。每个法拉第杯包括具有面对等离子体40的入口60的导电外壳。每个法拉第杯优选地尽可能接近晶片20地放置,并截取从等离子体40向台板14加速的正离子的样本。在另一种实施方式中,环形的法拉第杯置于晶片20和台板14的周围。
法拉第杯电连接到剂量处理器70或其他的剂量监视电路。通过入口60进入每个法拉第杯的正离子在连接到法拉第杯的电路中产生表示离子流的电流。剂量处理器70可处理该电流以确定离子剂量。
等离子体离子注入系统可包括围绕台板14的护圈66。护圈66可以被偏置以改善晶片20边缘附近的注入离子分布的均一性。法拉第杯50、52可以置于靠近晶片20和台板14的外围的护圈66内。
取决于系统的配置,等离子体离子注入系统可包括另外的部件。利用持续的或脉冲的RF能量的系统包括耦合到天线或感应线圈的RF源。所述系统可包括磁性元件,其提供限制电子和控制等离子体密度和空间分布的磁场。在等离子体离子注入系统中使用磁性元件在例如2003年6月12日公布的WO 03/049142中有描述,其通过引用结合于此。
工作中,晶片20置于台板14上。压力控制系统、质量流量控制器38和气源36在室10内产生所需的压力和气体流速。举例来说,室10可用10毫托压力的BF3气体来工作。脉冲源30向晶片20施加一系列高压脉冲,导致在晶片20和阳极24之间的等离子体放电区44中形成等离子体40。如本领域中公知的,等离子体40含有源于气源36的可离子化气体的正离子。等离子体40包括在晶片20附近、典型地在晶片20表面的等离子体鞘42。在高压脉冲期间存在于阳极24和台板14之间的电场将正离子从等离子体40穿过等离子体鞘42向着台板14加速。加速的离子注入晶片20以形成杂质材料区。选择脉冲电压以将正离子注入到晶片20的所需深度。选择脉冲的数目和脉冲持续时间,以提供晶片20中的所需的杂质材料剂量。每脉冲的流为脉冲电压、气体压力和种类以及电极的任何可变位置的函数。例如,可以针对不同电压调节阴极与阳极间的间距。
根据本发明第一实施方式的等离子体离子注入系统的简化示意框图显示于图2中。等离子体注入工艺子系统100包括显示于图1的一些或所有的等离子体离子注入系统部件,除了工艺控制部件之外。注入控制器110控制工艺子系统100,以根据注入工艺进行等离子体离子注入。
注入工艺可规定诸如离子种类、离子能量、离子剂量、剂量率、室压力、注入脉冲参数等的参数。在一些实施方式中,注入控制器110以其中参数被预编程的开环配置工作。在注入工艺期间,注入参数可为常数,或参数中的一个或多个可具有预编程的变化。在其他的实施方式中,注入控制器110可以以闭环配置工作,在该闭环配置中,至少一个任选的传感器120感测工艺子系统100的参数,并将传感器信号122提供给注入控制器110。注入控制器110可响应于传感器信号122而调节工艺子系统100的一个或多个参数。在另外的实施方式中,注入控制器110可使用预编程的控制和闭环反馈控制的组合。
注入控制器110可调节工艺子系统100的参数,如脉冲宽度、脉冲频率、离子能量、等离子体密度、RF功率、电场、磁场和/或阳极到阴极的间距,以便控制注入工艺,特别是控制剂量率。对于特定的工艺,离子种类和总剂量通常是固定的。不固定的参数可以单独地调节或以任何组合调节。
可以通过控制若干参数来调节剂量率,所述参数包括但不限于注入脉冲宽度、注入脉冲频率或两者。可通过控制注入脉冲幅度来调节离子能量。可例如通过控制输入功率(DC或RF)、电场或阴极与阳极间的间距,或通过控制等离子体约束来调节等离子体密度。等离子体密度的控制又控制剂量率。诸如脉冲宽度、脉冲频率和/或等离子体密度的参数可以迅速地调节,并从而允许动态控制注入工艺期间的剂量率。剂量率可以动态地改变,以至少部分地补偿被注入的离子和衬底之间的相互作用的非期望效应。这样的效应包括但不局限于光致抗蚀剂放气和衬底充电。
注入控制器110可以以通用计算机(如PC)、工艺控制器或被编程有注入工艺的专用控制器来实施。包括常数和可变参数的注入工艺可以存储在存储器中。
传感器120可感测工艺室内的各种状况,如衬底的表面状况,源于衬底的放气和/或衬底充电。例如,可以通过感测衬底附近的压力变化来感测放气。可以利用诸如残余气体分析(RGA)和光发射光谱(OES)的技术来感测工艺室参数。如上面所提到的那样,可以使用一个或多个传感器。
根据本发明第二实施方式的等离子体离子注入系统的简化示意框图显示于图3中。在图3的实施方式中,注入控制器110提供脉冲源30的开环控制以便控制剂量率、离子能量或两者。举例来说,注入控制器110可根据预编程的注入工艺来控制剂量率。通过将脉冲宽度编程为时间或注入剂量的函数,可以动态地调节注入脉冲宽度以直接地控制每个脉冲中的剂量。这允许在每个注入脉冲中被注入的电荷的量针对注入环境和衬底表面状况而优化。可以以同样的方式调节脉冲重复频率,以允许调节时间平均剂量率。在一些实施方式中,脉冲宽度和脉冲重复频率都可以被调节,以实现所需的剂量率变化。在特定的实施方式中,剂量率可在单个衬底的等离子体注入期间增大。低的初始剂量率导致源于光致抗蚀剂的放气得到控制,并使光致抗蚀剂稳定以便随后以较大剂量率进行注入。
例如,可以以台阶调节或持续地调节剂量率。可变的剂量率的第一个例子显示在图4A中。随着注入的进行和注入剂量的增大,剂量率以台阶130、132、134增大,直至达到最终剂量率136。在注入工艺的剩余部分,最终剂量率136保持固定。在本发明的范围内,台阶数目和台阶的宽度和幅度可以变化。在注入的至少一部分内剂量率持续增大的例子显示于图4B。在注入的初始部分内,剂量率根据剂量率曲线140从初始剂量率142持续增大到最终剂量率144,且在注入工艺的剩余部分,剂量率保持固定。在图4B中,在本发明的范围内,初始剂量率142、剂量率曲线140的形状和持续时间以及最终剂量率144可以变化。在图4A和4B中的每一个中,通过将剂量率描绘为时间的函数来得到类似形状的剂量率轮廓。诸如图4A和4B中所示的注入工艺期间的剂量率变化可以被预编程到注入控制器110中。
一般而言,理想的是,限制在其期间使用小于最大剂量率的注入的部分。小于最大剂量率的时段的延长会增加总的注入时间并降低处理量。
作为控制每脉冲的剂量率和时间平均剂量率的替选方案或附加方案,可以通过在注入期间改变等离子体密度来动态地控制瞬时剂量率。此控制技术依赖于等离子体产生方法,但包括:控制施加到等离子体源或被等离子体源吸收的功率如RF功率或微波功率、如通过控制磁性的或静电的元件来控制等离子体约束、以及如通过例如通过调节阳极到阴极的间距控制中性气体密度或等离子体标度长度(scale length)来控制离子化的效率。
可以通过改变注入期间的注入脉冲的幅度来动态地控制注入深度。这改变了被注入种类的深度轮廓,此效应尽管减小了诸如挥发性种类的放气的效应,但可能是有限的。另外,在脉冲等离子体实施方式中,可能理想的是,使得等离子体脉冲宽度比注入脉冲宽度长以确保注入脉冲之后的足够的电荷中和。这可以通过使用替选等离子体源如空心电极脉冲源56(图1)供给中和电子来完成。
根据本发明第三实施方式的等离子体离子注入系统的简化示意框图显示于图5中。显示了对剂量率和/或离子能量进行闭环控制的系统。传感器120感测工艺室10的参数,并提供传感器信号122给注入控制器110。响应于传感器信号122,注入控制器110控制脉冲源30的一个或多个参数,所述参数诸如注入脉冲宽度、注入脉冲频率和注入脉冲幅度。传感器120提供来自注入处理环境的反馈,如压力控制参数、衬底电压、晶片偏置电源电流、原位充电监视器、光发射光谱、残余气体分析、基于傅里叶变换红外线的气体分析、或等离子体放电的视频分析。应理解,一个或多个传感器可提供传感器信号给注入控制器110。注入控制器110可进行感测参数的分析,以确定注入系统的工作是否在正常工作范围内。如果一个或多个感测参数在正常工作范围之外,那么可以将控制信号提供给脉冲源30,以如上所述地调节剂量率。调节被选择为在正常范围内移动工作条件。
参考图6和7说明本发明的第四实施方式。图6为根据本发明第四实施方式的被配置用于用二次电子预处理衬底20的等离子体离子注入系统的简化的示意框图。图7是图示了根据本发明第四实施方式的衬底的等离子体离子注入的方法的流程图。
在预处理步骤期间,脉冲源30(图1)与阳极24和台板14断开,或被禁用。预处理电源200连接到阳极24和台板14,使得阳极24相对于台板14负偏置。台板14可以接地或可以正偏置。电源200可向阳极24供给负偏置电压-V。可通过电源200或通过单独的等离子体源(未显示在图6中)来发起并维持等离子体放电区44中的等离子体40。等离子体40可含有用于随后注入的掺杂剂材料的离子,或可含有惰性气体的离子。等离子体40中的正离子向负偏置的阳极24加速,并撞击负偏置的阳极24。正离子的撞击致使从阳极24表面的二次电子发射。负阳极偏置电势将二次电子向着面对阳极24的衬底20的表面加速。衬底可被偏置或接地,使得二次电子的净能量为发射能量加上阳极偏置和施加到衬底20的任何偏置之间的差。可通过衬底本身或通过另一接地表面来供给用于系统的地基准。
高能的二次电子预处理衬底22上的光致抗蚀剂掩模,并减小随后的离子注入步骤期间的放气。二次电子具有足够的能量和剂量,使得在离子注入之前,光致抗蚀剂掩模的放气基本上完成。这使得离子注入能够相对地免于光致抗蚀剂放气的效应,使对低能电子或带负电的离子的暴露最小化,并使得正离子能够在电子暴露期间到达衬底表面以中和电荷的不平衡。
用于预处理步骤的适当的气体种类可包括但不限于BF3,、AsF5、N2、Ar、PH3、AsH3和B2H6。施加到阳极24的电压可为-500伏~-20KV。适当的电子剂量可为1E15~1E17cm-2。
参照图7,在步骤250中,离子从等离子体40向阳极24加速以引起二次电子发射。如上所述,阳极24上的负偏置将带正电的离子从等离子体40向阳极24加速。同一负偏置将二次电子从阳极24向衬底20加速以便预处理衬底20。持续二次电子轰击,直到非期望效应如光致抗蚀剂放气基本上完成为止。然后,针对等离子体离子注入来配置等离子体离子注入系统。例如,可以将预处理电源200断开或禁用,且可以使能脉冲源30,如图1所示和如上所述。然后,在步骤254中,根据预定的注入工艺来进行衬底20的等离子体离子注入。在一些实施方式中,在注入工艺期间变化等离子体离子注入工艺的参数,如剂量率、离子能量或两者,以至少部分地补偿被注入的离子和衬底之间的相互作用的非期望效应。由于预处理步骤,所需的参数变化可减小。在其他的实施方式中,在等离子体离子注入期间,注入工艺的参数可以保持恒定。
由此描述了本发明的至少一种实施方式的几个方面,应理解,本领域技术人员将很容易想到各种改变、修改和改进。这些改变、修改和改进旨在为本公开的一部分,并且旨在落入本发明的精神和范围之内。
因此,上述的描述和附图仅为举例而言的。
Claims (10)
1.一种衬底的等离子体离子注入方法,包括:
提供等离子体离子注入系统,所述等离子体离子注入系统包括:工艺室、用于在所述工艺室中产生等离子体的源、用于在所述工艺室中承托衬底的台板、与所述台板隔开的阳极和用于产生将离子从所述等离子体向着所述衬底中加速的注入脉冲的脉冲源;
将离子从所述等离子体向所述阳极加速,以引起来自所述阳极的二次电子的发射;
将所述二次电子从所述阳极向所述衬底加速;以及
根据注入工艺的所述衬底的等离子体离子注入。
2.如权利要求1所述的方法,其中所述二次电子的能量在约500eV~20keV的范围内。
3.如权利要求1所述的方法,其中所述阳极涂覆有电子发射性材料。
4.如权利要求1所述的方法,其中所述阳极相对于所述等离子体负偏置。
5.如权利要求4所述的方法,其中所述台板被接地。
6.如权利要求4所述的方法,其中所述台板被正偏置。
7.如权利要求4所述的方法,其中空心阴极围绕所述阳极和所述等离子体之间的等离子体放电区,且其中所述空心阴极被接地。
8.一种用于衬底的等离子体离子注入的方法,包括:
提供等离子体离子注入系统,所述等离子体离子注入系统包括:工艺室、用于在所述工艺室中产生等离子体的源、用于在所述工艺室中承托衬底的台板和用于产生将离子从所述等离子体向着所述衬底加速的注入脉冲的脉冲源;
根据注入工艺的所述衬底的等离子体离子注入;以及
在所述注入工艺期间调节离子能量,以至少部分地补偿被注入的离子和所述衬底之间的相互作用的非期望效应。
9.一种等离子体离子注入系统,包括:
工艺室;
用于在所述工艺室中产生等离子体的源;
用于在所述工艺室中承托衬底的台板;
与所述台板隔开的阳极;
用于产生将离子从所述等离子体向着所述衬底中加速的注入脉冲的脉冲源;和
电源,用于将离子从所述等离子体向着所述阳极加速以引起二次电子从所述阳极发射,并且用于将所述二次电子从所述阳极向所述衬底加速。
10.一种等离子体离子注入系统,包括:
工艺室;
用于在所述工艺室中产生等离子体的源;
用于在所述工艺室中承托衬底的台板;
用于产生将离子从所述等离子体向着所述衬底中加速的注入脉冲的脉冲源;和
注入控制器,其被配置用于根据注入工艺的所述衬底的等离子体离子注入,并且被配置用于在所述注入工艺期间调节离子能量以至少部分地补偿被注入的离子和所述衬底之间的相互作用的非期望效应。
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CN103814434A (zh) * | 2011-08-30 | 2014-05-21 | 欧瑞康先进科技股份公司 | 晶片保持器和温度调节装置和制造晶片的方法 |
CN107408496A (zh) * | 2015-02-19 | 2017-11-28 | 离子射线服务公司 | 衬底稳定化方法及实施这种方法的机器 |
CN110828272A (zh) * | 2018-08-09 | 2020-02-21 | 北京北方华创微电子装备有限公司 | 腔室内衬、下电极装置和半导体处理设备 |
CN110828272B (zh) * | 2018-08-09 | 2022-09-16 | 北京北方华创微电子装备有限公司 | 腔室内衬、下电极装置和半导体处理设备 |
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WO2005115104A2 (en) | 2005-12-08 |
US20050260837A1 (en) | 2005-11-24 |
US7396746B2 (en) | 2008-07-08 |
CN1998062B (zh) | 2010-09-01 |
CN101892463B (zh) | 2012-09-19 |
JP2012178571A (ja) | 2012-09-13 |
CN1998062A (zh) | 2007-07-11 |
TWI345265B (en) | 2011-07-11 |
TW200539327A (en) | 2005-12-01 |
JP5071976B2 (ja) | 2012-11-14 |
WO2005115104A3 (en) | 2006-07-06 |
KR101126376B1 (ko) | 2012-03-28 |
KR20070026635A (ko) | 2007-03-08 |
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