JP2012178571A - 安定かつ反復可能なプラズマイオン注入方法及び装置 - Google Patents
安定かつ反復可能なプラズマイオン注入方法及び装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000005468 ion implantation Methods 0.000 title claims abstract description 38
- 150000002500 ions Chemical class 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000002513 implantation Methods 0.000 claims abstract description 51
- 230000008569 process Effects 0.000 claims abstract description 38
- 238000012545 processing Methods 0.000 claims abstract description 31
- 230000000694 effects Effects 0.000 claims abstract description 13
- 230000003993 interaction Effects 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 description 31
- 239000007924 injection Substances 0.000 description 31
- 235000012431 wafers Nutrition 0.000 description 30
- 239000007789 gas Substances 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000010943 off-gassing Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000001802 infusion Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- 241000894007 species Species 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000004868 gas analysis Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 229910000070 arsenic hydride Inorganic materials 0.000 description 2
- 230000005591 charge neutralization Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910017049 AsF5 Inorganic materials 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 240000005373 Panax quinquefolius Species 0.000 description 1
- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
【解決手段】基板のプラズマイオン注入のための方法は、処理チャンバ、前記処理チャンバ内にプラズマを生成するためのソース、前記処理チャンバ内で基板を保持するためのプラテン、及びプラズマから基板へイオンを加速するための注入パルスを生成するパルスソースを含むプラズマイオン注入装置を与える工程と、注入処理に従い基板のプラズマイオン注入を実行する工程と、注入されるイオンと基板との間の不所望な相互作用の効果を少なくとも部分的に補償するよう注入処理中にイオンエネルギーを調節する工程と、を備える。
【選択図】図5
Description
14 プラテン
24 陽極
30 パルスソース
40 プラズマ
44 プラズマ放電領域
66 ガードリング
110 注入制御器
120 センサー
122 センサー信号
Claims (1)
- 基板のプラズマイオン注入のための方法であって、
処理チャンバ、前記処理チャンバ内にプラズマを生成するためのソース、前記処理チャンバ内で基板を保持するためのプラテン、及びプラズマから基板へイオンを加速するための注入パルスを生成するパルスソースを含むプラズマイオン注入装置を与える工程と、
注入処理に従い基板のプラズマイオン注入を実行する工程と、
注入されるイオンと基板との間の不所望な相互作用の効果を少なくとも部分的に補償するよう注入処理中にイオンエネルギーを調節する工程と、
を備えたことを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/852,643 US7396746B2 (en) | 2004-05-24 | 2004-05-24 | Methods for stable and repeatable ion implantation |
US10/852,643 | 2004-05-24 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007515133A Division JP5071976B2 (ja) | 2004-05-24 | 2005-05-09 | 安定かつ反復可能なプラズマイオン注入方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012178571A true JP2012178571A (ja) | 2012-09-13 |
Family
ID=35375740
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007515133A Expired - Fee Related JP5071976B2 (ja) | 2004-05-24 | 2005-05-09 | 安定かつ反復可能なプラズマイオン注入方法 |
JP2012079462A Pending JP2012178571A (ja) | 2004-05-24 | 2012-03-30 | 安定かつ反復可能なプラズマイオン注入方法及び装置 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007515133A Expired - Fee Related JP5071976B2 (ja) | 2004-05-24 | 2005-05-09 | 安定かつ反復可能なプラズマイオン注入方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7396746B2 (ja) |
JP (2) | JP5071976B2 (ja) |
KR (1) | KR101126376B1 (ja) |
CN (2) | CN101892463B (ja) |
TW (1) | TWI345265B (ja) |
WO (1) | WO2005115104A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9773712B2 (en) | 2015-08-25 | 2017-09-26 | Toshiba Memory Corporation | Ion implantation apparatus and semiconductor manufacturing method |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US9773712B2 (en) | 2015-08-25 | 2017-09-26 | Toshiba Memory Corporation | Ion implantation apparatus and semiconductor manufacturing method |
Also Published As
Publication number | Publication date |
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JP2008500729A (ja) | 2008-01-10 |
CN1998062B (zh) | 2010-09-01 |
CN1998062A (zh) | 2007-07-11 |
CN101892463A (zh) | 2010-11-24 |
TWI345265B (en) | 2011-07-11 |
JP5071976B2 (ja) | 2012-11-14 |
KR20070026635A (ko) | 2007-03-08 |
CN101892463B (zh) | 2012-09-19 |
KR101126376B1 (ko) | 2012-03-28 |
WO2005115104A3 (en) | 2006-07-06 |
WO2005115104A2 (en) | 2005-12-08 |
US7396746B2 (en) | 2008-07-08 |
US20050260837A1 (en) | 2005-11-24 |
TW200539327A (en) | 2005-12-01 |
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