FR3033079B1 - Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede - Google Patents

Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede Download PDF

Info

Publication number
FR3033079B1
FR3033079B1 FR1500320A FR1500320A FR3033079B1 FR 3033079 B1 FR3033079 B1 FR 3033079B1 FR 1500320 A FR1500320 A FR 1500320A FR 1500320 A FR1500320 A FR 1500320A FR 3033079 B1 FR3033079 B1 FR 3033079B1
Authority
FR
France
Prior art keywords
passivating
substrate
carrying
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1500320A
Other languages
English (en)
Other versions
FR3033079A1 (fr
Inventor
Frank Torregrosa
Yohann SPIEGEL
Laurent Roux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion Beam Services SA
Original Assignee
Ion Beam Services SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1500320A priority Critical patent/FR3033079B1/fr
Application filed by Ion Beam Services SA filed Critical Ion Beam Services SA
Priority to US15/552,094 priority patent/US20180031319A1/en
Priority to PCT/FR2016/000027 priority patent/WO2016132029A1/fr
Priority to CN201680010888.4A priority patent/CN107408496A/zh
Priority to KR1020177026308A priority patent/KR20170113675A/ko
Priority to EP16711329.9A priority patent/EP3259773A1/fr
Priority to JP2017542141A priority patent/JP2018512725A/ja
Priority to TW105104749A priority patent/TWI651768B/zh
Publication of FR3033079A1 publication Critical patent/FR3033079A1/fr
Application granted granted Critical
Publication of FR3033079B1 publication Critical patent/FR3033079B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
    • F26B25/06—Chambers, containers, or receptacles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
FR1500320A 2015-02-19 2015-02-19 Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede Active FR3033079B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1500320A FR3033079B1 (fr) 2015-02-19 2015-02-19 Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede
PCT/FR2016/000027 WO2016132029A1 (fr) 2015-02-19 2016-02-17 Procédé de stabilisation d'un substrat et machine pour la mise en oeuvre de ce procédé
CN201680010888.4A CN107408496A (zh) 2015-02-19 2016-02-17 衬底稳定化方法及实施这种方法的机器
KR1020177026308A KR20170113675A (ko) 2015-02-19 2016-02-17 기판을 안정화시키는 방법 및 이 방법을 수행하기 위한 장치
US15/552,094 US20180031319A1 (en) 2015-02-19 2016-02-17 A method of stabilizing a substrate and a machine for performing the method
EP16711329.9A EP3259773A1 (fr) 2015-02-19 2016-02-17 Procédé de stabilisation d'un substrat et machine pour la mise en oeuvre de ce procédé
JP2017542141A JP2018512725A (ja) 2015-02-19 2016-02-17 基板安定化方法及び該方法を実施するための装置
TW105104749A TWI651768B (zh) 2015-02-19 2016-02-18 使基材穩定化之方法以及執行該方法之機器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1500320A FR3033079B1 (fr) 2015-02-19 2015-02-19 Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede
FR1500320 2015-02-19

Publications (2)

Publication Number Publication Date
FR3033079A1 FR3033079A1 (fr) 2016-08-26
FR3033079B1 true FR3033079B1 (fr) 2018-04-27

Family

ID=53483872

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1500320A Active FR3033079B1 (fr) 2015-02-19 2015-02-19 Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede

Country Status (8)

Country Link
US (1) US20180031319A1 (fr)
EP (1) EP3259773A1 (fr)
JP (1) JP2018512725A (fr)
KR (1) KR20170113675A (fr)
CN (1) CN107408496A (fr)
FR (1) FR3033079B1 (fr)
TW (1) TWI651768B (fr)
WO (1) WO2016132029A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7560054B2 (ja) * 2020-12-22 2024-10-02 青島海爾洗衣机有限公司 寝具乾燥装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144100A (en) * 1977-12-02 1979-03-13 General Motors Corporation Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon
US4689667A (en) * 1985-06-11 1987-08-25 Fairchild Semiconductor Corporation Method of controlling dopant diffusion and dopant electrical activation by implanted inert gas atoms
US6207005B1 (en) * 1997-07-29 2001-03-27 Silicon Genesis Corporation Cluster tool apparatus using plasma immersion ion implantation
JP5068402B2 (ja) * 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
US6803297B2 (en) * 2002-09-20 2004-10-12 Applied Materials, Inc. Optimal spike anneal ambient
US6897131B2 (en) * 2002-09-20 2005-05-24 Applied Materials, Inc. Advances in spike anneal processes for ultra shallow junctions
JP2004221246A (ja) * 2003-01-14 2004-08-05 Seiko Epson Corp 半導体装置及びその製造方法
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US7396746B2 (en) * 2004-05-24 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Methods for stable and repeatable ion implantation
JP2006270000A (ja) * 2005-03-25 2006-10-05 Sumco Corp 歪Ｓｉ−ＳＯＩ基板の製造方法および該方法により製造された歪Ｓｉ−ＳＯＩ基板
WO2008077020A2 (fr) * 2006-12-18 2008-06-26 Applied Materials, Inc. Manipulation inoffensive de tranches implantées de faible énergie, à haute dose d'arsenic, de phosphore et de bore
US7989329B2 (en) * 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
US7968440B2 (en) * 2008-03-19 2011-06-28 The Board Of Trustees Of The University Of Illinois Preparation of ultra-shallow semiconductor junctions using intermediate temperature ramp rates and solid interfaces for defect engineering
TW201027784A (en) * 2008-10-07 2010-07-16 Applied Materials Inc Advanced platform for processing crystalline silicon solar cells
US8288257B2 (en) * 2008-10-31 2012-10-16 Applied Materials, Inc. Doping profile modification in P3I process
FR2961010A1 (fr) * 2010-06-03 2011-12-09 Ion Beam Services Dispositif de mesure de dose pour l'implantation ionique en mode immersion plasma
CN102312210A (zh) * 2010-07-05 2012-01-11 中国科学院微电子研究所 一种等离子体浸没离子注入系统
KR101215649B1 (ko) * 2011-02-14 2012-12-26 에스케이하이닉스 주식회사 반도체 소자의 형성방법
US9085045B2 (en) * 2011-11-04 2015-07-21 Tokyo Electron Limited Method and system for controlling a spike anneal process
JP6050662B2 (ja) * 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
CN102891112B (zh) * 2012-10-25 2016-09-28 上海华虹宏力半导体制造有限公司 改善双栅cmos多晶硅耗尽的方法以及双栅cmos
CN103022046B (zh) * 2012-12-28 2019-01-15 无锡来燕微电子有限公司 一种具有p+单一多晶架构且与cmos工艺相兼容的非挥发性记忆体及其制备方法
KR20160061966A (ko) * 2013-07-31 2016-06-01 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 멤리스터 및 멤리스터의 제조 방법

Also Published As

Publication number Publication date
JP2018512725A (ja) 2018-05-17
FR3033079A1 (fr) 2016-08-26
WO2016132029A1 (fr) 2016-08-25
TWI651768B (zh) 2019-02-21
CN107408496A (zh) 2017-11-28
KR20170113675A (ko) 2017-10-12
TW201719727A (zh) 2017-06-01
EP3259773A1 (fr) 2017-12-27
US20180031319A1 (en) 2018-02-01

Similar Documents

Publication Publication Date Title
FR3019953B1 (fr) Procede de commande d&#39;un robot multi-axes et robot pour la mise en oeuvre d&#39;un tel procede
FR3025937B1 (fr) Procede de grapho-epitaxie pour realiser des motifs a la surface d&#39;un substrat
FR3030456B1 (fr) Procede de guidage pour la mise a poste d&#39;un satellite
MA46060A (fr) Composition et procédé pour éliminer un revêtement d&#39;une surface
FR3044023B1 (fr) Dispositif pour le revetement d&#39;un ou plusieurs fils par un procede de depot en phase vapeur
FR3005312B1 (fr) Procede d&#39;ultra-deshydratation de produits epaissis ou pateux formant une biomasse, et installation pour la mise en oeuvre du procede
IL277852B1 (en) A method for performing a measurement procedure
FR3022070B1 (fr) Procede de texturation aleatoire d&#39;un substrat semiconducteur
FR3041146B1 (fr) Procede de mise en tension d&#39;un film semi-conducteur
FR3036635B1 (fr) Procede de traitement des poussieres retirees d&#39;une surface par un outil et equipement permettant la mise en oeuvre dudit procede
FR3037078B1 (fr) Procede pour la fabrication de nanocelluloses a partir d&#39;un substrat cellulosique
FR3017543B1 (fr) Procede d&#39;exploitation d&#39;une installation de traitement d&#39;eau, et installation pour la mise en oeuvre du procede
FR3027249B1 (fr) Feuille pour la protection d&#39;une surface de coffrage, installation de coffrage, procede de fabrication et procede de mise en oeuvre
FR3032989B1 (fr) Banche de coffrage et procede de mise en place d&#39;une banche
FR2998711B1 (fr) Procede pour decoller des puces de semi-conducteurs d&#39;un film
FR3035122B1 (fr) Procede de traitement de surface d&#39;un film en mouvement et installation pour la mise en oeuvre de ce procede
FR3028206B1 (fr) Procede de fabrication d&#39;une bandelette de gomme comprenant des renforts discontinus et dispositif pour sa mise en oeuvre
FR3033079B1 (fr) Procede de passivation d&#39;un substrat et machine pour la mise en oeuvre de ce procede
IL248659A0 (en) A method for testing a pattern of characteristics in a semiconductor chip
FR3055423B1 (fr) Procede d&#39;identification d&#39;un navire
FR3042909B1 (fr) Procede d&#39;encapsulation d&#39;un composant microelectronique
MA50984A (fr) Procédé pour la fabrication d&#39;un disque composite
FR3015464B1 (fr) Procede de traitement d&#39;effluents charges en azote, et reacteur pour la mise en oeuvre du procede.
FR3030325B1 (fr) Procede de percage et machine pour la mise en oeuvre de ce procede
FR3058736B1 (fr) Unite de traitement pour installation de traitement de surface d&#39;un substrat en mouvement, installation et procede de mise en oeuvre correspondants

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20160826

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10