TWI651768B - 使基材穩定化之方法以及執行該方法之機器 - Google Patents
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Abstract
本發明關於處理基材(23)之方法,其包括摻雜步驟,隨後緊接著穩定化步驟。該方法值得注意之處在於該穩定化步驟包括將該基材浸入形成包含下列之組的一部分之氣體:氧;水蒸汽;濕空氣;過氧化氫蒸汽;臭氧;及氨。本發明亦提供根據上述方法處理基材且包括氣體引入孔口的機器。
Description
本發明關於使基材穩定化之方法及執行該方法之機器。
本發明領域係使基材經歷摻雜之微電子裝置領域。
熟習本領域之人士明白眾多用以摻雜的技術,特別包括離子植入。
摻雜在於修改基材的半導體性質。因此,例如,為了摻雜矽基材,植入於其中之元素係來自周期表第IU族或第V族。對熟習本領域之人士而言,以惰性氣體(例如氬或氪)撞擊基材不算摻雜,因為此等元素具有完整的外層電子殼。
離子植入目前以電漿浸沒模式廣泛使用。在該技術中,將基材浸浸於電漿中,並以在數十伏至數百千伏之範圍的負電壓施以偏壓,以建立能加速該電漿之離子加速朝向該基材的電場,因此該等離子變成植入於該基材中。該
偏壓通常為脈衝式。
問題係,特定摻雜劑(諸如磷或砷)易於與周圍空氣反應而形成非常高毒性的氣體,諸如膦PH3或胂AsH3。在周圍空氣中,水蒸汽及氧參與該等化學反應。
就磷而言,主要反應如下:2P2+6H2O → 3H3PO2+PH3 2P2+5O2 → P4O10
就砷而言,主要反應如下:4As+3H2O → As2O3+2AsH3 4As+3O2 → 2As2O3 As2O3+O2 → As2O5
亦可提及其他摻雜劑,換言之,硼,其會釋放B2H6。
在本說明中,原子層沉積(ALD)技術被視為摻雜技術。
因此可看出,提供小量所產生之有毒氣體通常只有少許難度,原因係在周圍空氣中稀釋足以使濃度降至低於各種法律規定可接受的值。
反之,在先進的微電子裝置中,將經處理基材貯存於稱為前開式統一盒(front opening unified pod,FOUP)之封閉箱中。FOUP中之有毒氣體的濃度會達到危險門檻。
因此,穩定化基材表面為宜,且用以避免此問題的一種已知解決方法在於將該基材放回大氣中之前將其密封在鈍化層或「上覆」層中。該層係由矽或氧化矽或氮化矽製
成,且具有數奈米厚度。
例如,該解決方法係於文件US 2008/277715及US 4 144 100中解釋。
該解決方法遭遇數個限制。
首先,沉積需要在與用以摻雜的相同機器且不破壞真空的情況下「原位」進行,因而增加該機器的複雜度及處理成本,同時亦降低生產力。
其次,沉積物需要在其可能與經摻雜表面接觸之前即移除。此種移除需要非常精確地控制以避免過度蝕刻該表面,原因此過度蝕刻會導致摻雜劑損失。移除必須全面但不涉及經摻雜表面。
第三,該等沉積及蝕刻方法構成相關組件之操作的變化性主要來源。愈來愈小的組件尺寸已導致使用約5奈米之摻雜深度。結果,沉積及蝕刻需要以十分之一奈米等級的精確度執行,目前此在實務上是不可能的。
因此,本發明目的係提供可能克服先前技術之限制的方法及機器。
根據本發明,一種處理基材之方法包括摻雜步驟,隨後緊接著穩定化步驟,該方法值得注意的是該穩定化步驟包括將該基材浸入形成包含下列之組的一部分之氣體:氧;水蒸汽;濕空氣;過氧化氫蒸汽;臭氧;及氨。
因而造成在局限氣氛中發生經摻雜表面之反應,從而
消除因該反應所產生的有毒氣體所形成之任何危險。
在第一選項中,該穩定化步驟包括以氣體掃除基材。
在第二選項中,該穩定化步驟包括進行至少一個循環,該循環包括引入該氣體之步驟及之後接著藉由泵送吹洗之步驟。
較佳地,該摻雜步驟係藉由離子植入進行。
有利的是,離子植入係藉由電漿浸沒進行。
在較佳實施中,該穩定化步驟包括加熱基材。
根據本發明一額外特徵,該氣體包括來自電漿的氣態物種。
基於安全因素,該穩定化步驟之後接著分析殘餘氣氛之步驟。
本發明亦提供用以藉由上述方法處理基材之機器,該機器包含摻雜室及用以引入氣體之孔口,該機器值得注意的是其包括在該摻雜室外部的穩定化構件,該穩定化步驟係在該構件中進行。
在第一選項中,該穩定化構件為抽空之氣室。
在第二選項中,該穩定化構件為穩定化室。
10‧‧‧盤
11‧‧‧第一裝載機械手臂
12‧‧‧第二裝載機械手臂
13‧‧‧第一裝載/卸載氣室
14‧‧‧第二裝載/卸載氣室
15‧‧‧第一植入室
16‧‧‧第二植入室
17‧‧‧穩定化室
21‧‧‧氣體擴散器
22‧‧‧基材載體
23‧‧‧基材
24‧‧‧節流閥
25‧‧‧泵單元
圖1顯示執行本發明方法的機器;圖2顯示穩定化室。
下文中,本發明從以舉例方式提供之實施的下列說明並參考附圖更詳細顯示,其中:
在多於一張圖式中為相同的元件各給予相同參考符號。
參考圖1,可看到摻雜機器。從圖式左側起,可看到四個FOUP裝載盤10。該等盤10為在大氣壓力下操作之第一裝載機械手臂11饋料。
該第一機械手臂11與在真空下操作之第二裝載機械手臂12連通,且經由第一裝載/卸載氣室13及第二裝載/卸載氣室14達成此舉。此二裝載/卸載氣室13及14亦在真空下操作。
該第二機械手臂12為第一植入室15饋料。
隨意地,其為第二植入室16饋料。
根據本發明,亦可提供穩定化室17,其同樣藉由第二裝載機械手臂12饋料。
本發明之處理方法因此包含摻雜步驟,在本實例中,其係在植入室中進行。
在摻雜步驟之後立即(即,不將基材放回氣氛中)接著穩定化步驟,用以解吸(除氣)有毒物種,或飽和經高度摻雜表面的懸鍵。該步驟係在受控制氣氛下進行,以降低將該基材放回空氣時其與該氣氛的反應性。
在第一方法途徑中,表面係藉由使用氧、水蒸汽、濕空氣、過氧化氫蒸汽、或臭氧氧化而穩定化。
在第二方法途徑中,表面係藉由使用氮或較佳為氨
(NH3)氮化而穩定化。
穩定化係僅藉由將基材與上述氣體之一接觸來進行。
該等氣體可以分子形式,或確實以已藉由電漿激發或離子化的氣態物種形式使用。
在特定狀態下,必須加熱基材以加速穩定化製程。例如,為了以水蒸汽中和經磷摻雜之表面,希望將該基材升至高於200℃的溫度。
進行穩定化的第一種可能性在於以反應性氣體掃除基材表面。通常,操作壓力位於0.01毫巴(mbar)至100mbar之範圍,流率位於每分鐘50標準立方厘米(sccm)至1000sccm之範圍。
第二種可能性在於提供將氣體引入該封閉體之步驟接著藉由泵送吹洗之步驟的循環。所需之循環次數可以經驗決定。通常,壓力偏離位於0.1mbar至100mbar之範圍,而循環次數位於3至10之範圍。
再者,可能使用氣體分析儀以評估殘餘氣氛之毒性。當偵測到有毒氣體時,裝置可防止基材釋出並重啟穩定化階段。
該穩定化方法可在摻雜室中「原位」進行,其具有鈍化該室之壁的優點。然後,生產力則受到影響,且存在該氣氛受到反應性氣體之殘壓污染的風險。
因此,較佳係在位於該摻雜室外部的穩定化室中進行穩定化。
第一種解決方法在於使用抽空之裝載/卸載氣室13,
14作為穩定化構件。
第二種解決方法在於使用專用的穩定化室17作為穩定化構件。
參考圖2,其中顯示穩定化室之實施態樣。在其頂部,室17包含呈蓮蓬頭形式之氣體擴散器21。基材載體22係配置為面向該氣體擴散器21,且其接收供處理的基材23。基材載體22可能用作加熱器。
在該室17底部,可看到將該室與泵單元25連接的可調整節流閥24(蝶形閥)。
在任何情況下,該基材保持真空直到其表面已穩定化為止,換言之,該穩定化步驟緊接在該摻雜步驟之後。
由於具體性質之故,上述本發明之實施已經選擇。然而,不可能詳盡列出本發明所涵蓋的所有實施。特別是,在不超出本發明範圍的情況下,所述之任何步驟或任何工具均可由等效步驟或工具替代。
Claims (11)
- 一種處理基材(23)之方法,其包括摻雜步驟,隨後緊接著穩定化步驟,該方法的特徵在於該穩定化步驟包括將該基材浸入形成包含下列之組的一部分之氣體:氧;水蒸汽;濕空氣;過氧化氫蒸汽;臭氧;及氨。
- 如申請專利範圍第1項之方法,其中該穩定化步驟包括以該氣體掃除該基材(23)。
- 如申請專利範圍第1項之方法,其中該穩定化步驟包括進行至少一個循環,該循環包括引入該氣體之步驟及之後接著藉由泵送吹洗之步驟。
- 如申請專利範圍第1項之方法,其中該摻雜步驟係藉由離子植入進行。
- 如申請專利範圍第4項之方法,其中該離子植入係藉由電漿浸沒(15,16)進行。
- 如申請專利範圍第1項之方法,其中該穩定化步驟包括加熱該基材(23)之階段。
- 如申請專利範圍第1項之方法,其中該氣體包括來自電漿之氣態物種。
- 如申請專利範圍第1項之方法,其中該穩定化步驟之後接著分析殘餘氣氛之步驟。
- 一種用以藉由如前述申請專利範圍任一項之方法處理基材的機器,該機器包含摻雜室(15,16)及用以引入該氣體之孔口(21),該機器之特徵在於其包括在該摻雜室外部的穩定化構件(13,14;17),該穩定化步驟係 在該構件中進行。
- 如申請專利範圍第9項之機器,其中該穩定化構件為抽空之氣室(13,14)。
- 如申請專利範圍第9項之機器,其中該穩定化構件為穩定化室(17)。
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FR1500320A FR3033079B1 (fr) | 2015-02-19 | 2015-02-19 | Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede |
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WO2016132029A1 (fr) | 2016-08-25 |
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TW201719727A (zh) | 2017-06-01 |
CN107408496A (zh) | 2017-11-28 |
KR20170113675A (ko) | 2017-10-12 |
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