TWI767236B - 束線架構及操作其的方法 - Google Patents

束線架構及操作其的方法 Download PDF

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TWI767236B
TWI767236B TW109117038A TW109117038A TWI767236B TW I767236 B TWI767236 B TW I767236B TW 109117038 A TW109117038 A TW 109117038A TW 109117038 A TW109117038 A TW 109117038A TW I767236 B TWI767236 B TW I767236B
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chamber
plasma
workpiece
transfer chamber
wafer
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克里斯多夫 Ｒ 漢特曼
克里斯多福 Ａ 羅蘭德
約瑟 Ｃ 歐爾森
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美商應用材料股份有限公司
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Abstract

提供一種束線架構及操作其的方法。所述束線架構包括： 晶圓搬送腔室；真空加載鎖，耦合到晶圓搬送腔室以利於在大氣環境與晶圓搬送腔室之間傳送工件；等離子體腔室，耦合到晶圓搬送腔室且容納等離子體源，以用於對工件執行等離子體預清潔製程、等離子體增強型化學氣相沉積製程、等離子體退火製程、預加熱製程、及刻蝕製程中的至少一者；製程腔室，耦合到晶圓搬送腔室且適於對工件執行離子植入製程；以及閥門，設置在晶圓搬送腔室與等離子體腔室之間，以用於將等離子體腔室與晶圓搬送腔室及製程腔室密封隔絕，其中等離子體腔室內的壓力與製程腔室內的壓力能夠彼此獨立地改變。

Description

束線架構及操作其的方法
本公開的實施例一般來說有關於半導體器件製作領域，且更具體來說有關於具有集成等離子體處理的束線離子植入架構。
隨著電子組件變得更小、更複雜及更強大，在這些組件中所採用的半導體器件受到與缺陷、雜質及均勻性相關的越來越嚴格的公差限制。當對半導體晶圓執行離子植入時，晶圓的結構、純度及均勻性都可能受到離子植入之前晶圓表面上的天然氧化物及有機污染物的存在以及受到離子植入之後留下的殘餘材料(例如殘餘沉積物、刻蝕/濺鍍殘留物及聚合物化學物質)的存在的不利影響。因此，在離子植入之前及離子植入之後從半導體晶圓移除表面污染物對於優化現代應用中的性能可能是有益的或必要的。迄今為止，對以不會對晶圓通量(wafer throughput)產生負面影響且不會將晶圓暴露於大氣(其中表面污染物可能會被引入到晶圓)的高效的、有成本效益的方式執行這種移除已經提出了 重大的挑戰。
對於這些及其他考慮，當前的改進可能是有用的。
提供本發明內容是為了以簡化的形式介紹一系列概念。本發明內容不旨在識別所主張的主題的關鍵特徵或必要特徵，本發明內容也不旨在幫助確定所主張的主題的範圍。
根據本公開實施例的束線架構的示例性實施例可包括：晶圓搬送腔室；等離子體腔室，耦合到所述晶圓搬送腔室且容納等離子體源，以用於對工件執行離子植入前製程(pre-ion implantation process)及離子植入後製程(post-ion implantation process)中的至少一者；以及製程腔室，耦合到所述晶圓搬送腔室且適於對工件執行離子植入製程。
根據本公開實施例的束線架構的另一示例性實施例可包括：晶圓搬送腔室；真空加載鎖(load-lock)，耦合到所述晶圓搬送腔室，以利於在大氣環境與所述晶圓搬送腔室之間傳送工件；等離子體腔室，耦合到所述晶圓搬送腔室且容納等離子體源，以用於對工件執行等離子體預清潔製程(plasma pre-clean process)、等離子體增強型化學氣相沉積製程(plasma enhanced chemical vapor deposition process)、等離子體退火製程(plasma annealing process)、預加熱製程、及刻蝕製程中的至少一者；製程腔室，耦合到所述晶圓搬送腔室且適於對工件執行離子植入製程；以及閥 門，設置在所述晶圓搬送腔室與所述等離子體腔室之間，以用於將所述等離子體腔室與所述晶圓搬送腔室及所述製程腔室密封隔絕，其中所述等離子體腔室內的壓力與所述製程腔室內的壓力能夠彼此獨立地改變。
根據本公開實施例的一種操作束線架構的方法的示例性實施例可包括：將工件從晶圓搬送腔室移動到等離子體腔室中；對所述工件執行離子植入前製程及離子植入後製程中的至少一者；以及將所述工件從所述晶圓搬送腔室移動到製程腔室中且對所述工件執行離子植入製程。
10、200、300:束線架構/架構
12、212、312:載體
14、214、314:緩衝器
16、216:入口真空加載鎖
16a、16b、18a、18b、31、231、233:閥門
18、218:出口真空加載鎖
20、220、320:晶圓搬送腔室
22、222、322:等離子體腔室
24、224、324:製程腔室
25:大氣機器人
26:真空機器人
27:對齊站
28、228:計量組件
30、32:平台/壓板
34:等離子體源
100、110、120、130、140、150、160、170、180:方塊
223、323:傳送腔室
235:傳送機器人
317:入口出口真空加載鎖
作為實例，現在將參照附圖闡述所公開的設備的各種實施例，其中：圖1是示出根據本公開束線架構的示例性實施例的平面圖。
圖2是示出操作圖1中所示束線架構的示例性方法的流程圖。
圖3是示出根據本公開束線架構的另一示例性實施例的平面圖。
圖4是示出根據本公開束線架構的另一示例性實施例的平面圖。
現在將參照附圖在下文中更全面地闡述本實施例，其中 示出一些實施例。本公開的主題可以許多不同的形式來實施且不應被解釋為僅限於本文中提出的實施例。提供這些實施例，因此本公開將是透徹及完整的，且將向所屬領域中的技術人員充分傳達主題的範圍。在圖式中，相同的編號始終指代相同的元件。
圖1繪示出根據本公開示例性實施例的束線架構10(下文中為「架構10」)。架構10可包括一個或多個載體12、緩衝器14、入口真空加載鎖16、出口真空加載鎖18、晶圓搬送腔室20、等離子體腔室22及製程腔室24。入口真空加載鎖16及出口真空加載鎖18可包括各自的閥門16a、16b及18a、18b，以用於保持載體12及緩衝器14的大氣環境與晶圓搬送腔室20、等離子體腔室22及製程腔室24的真空環境之間的氣密分離，同時還利於工件(例如矽晶圓)在它們之間的傳送，如以下進一步闡述。
緩衝器14可包含一個或多個大氣機器人25，所述一個或多個大氣機器人25被配置成將工件從載體12傳送到入口真空加載鎖16以及從出口真空加載鎖18傳送到載體12。晶圓搬送腔室20可包括一個或多個真空機器人26，所述一個或多個真空機器人26被配置成在入口真空加載鎖16、等離子體腔室22、製程腔室24及出口真空加載鎖18之間傳送工件，如以下進一步闡述。晶圓搬送腔室20可進一步包括對齊站27，所述對齊站27被配置成在製程腔室24中在處理之前以期望的方式對工件進行取向。舉例來說，對齊站27可被配置成檢測工件上的凹口或其他標記，以確定及/或調整工件取向。如果不需要工件對齊，則對齊站27可包括簡 單的基座或支架。對齊站27也可被配置成執行附加功能，例如基板識別。
晶圓搬送腔室20還可包括各種計量組件28。計量組件28可包括且不限於橢偏儀、反射儀、高溫計等。計量組件28可利於在等離子體腔室22中在處理之前及處理之後及/或在製程腔室24中在處理之前及處理之後測量工件的各個方面及特徵。舉例來說，計量組件28可利於檢測及測量工件的表面上的天然氧化物及其他污染物。計量組件28還可利於測量沉積在工件的表面上的膜的厚度及組成。
製程腔室24可連接到晶圓搬送腔室20且可包括壓板30或平台30，所述壓板30或平台30具有配准(registration)、夾緊及/或冷卻機構，以用於接納待處理工件且在處理期間將這些工件保留在期望的位置及取向。在各種實施例中，製程腔室24可為常規束線離子植入設備(下文中為「離子植入機」)的製程腔室，所述常規束線離子植入設備被配置成將離子束投射到工件上以進行其離子植入。離子植入機(除了製程腔室24之外未示出)可包括各種傳統的束線組件，包括且不限於離子源、分析器磁體、校正器磁體等。在各種實施例中，離子植入機可響應於將具有期望物質的一種或多種進料氣體(feed gas)引入到離子源中而產生作為點型離子束(spot type ion beam)的離子束。本公開並不僅限於此。如所屬領域中的普通技術人員將理解，離子植入機可包括各種附加的束處理組件，當離子束從離子源傳播到設置在壓板30上的工 件時，所述各種附加的束處理組件適於對離子束進行成形、聚焦、加速、減速及/或彎曲。舉例來說，離子植入機可包括靜電掃描器以用於在相對於工件的一個或多個方向上掃描離子束。
與製程腔室24類似，等離子體腔室22可連接到晶圓搬送腔室20且可包括壓板32或平台32，以用於接納待處理工件且在處理期間保留這些工件。可在等離子體腔室22與晶圓搬送腔室20的接合處實施閥門31，以利於它們之間的氣密分離。因此，可通過獨立於晶圓搬送腔室20的真空環境來調節等離子體腔室22內的壓力，以適應在等離子體腔室22中執行的各種製程，如以下進一步闡述。
等離子體腔室22可包括等離子體源34，所述等離子體源34被配置成從由氣體源(未示出)供應到等離子體腔室22的氣態物質產生高能等離子體(energetic plasma)。在各種實施例中，等離子體源34可為射頻(radio frequency，RF)等離子體源(例如，電感耦合等離子體(inductively-coupled plasma，ICP)源、電容耦合等離子體(capacitively coupled plasma，CCP)源、螺旋波源(helicon source)、電子回旋共振(electron cyclotron resonance，ECR)源)、間接加熱陰極(indirectly heated cathode，IHC)源或輝光放電源(glow discharge source)。在特定實施例中，等離子體源34可為RF等離子體源且可包括RF產生器及RF匹配網絡。本公開並不僅限於此。
如所屬領域中普通技術人員將理解，等離子體腔室22可 被配置成對設置在壓板32上的工件執行各種常規製程。舉例來說，等離子體腔室22可用於對工件執行等離子體清潔製程，其中供應到等離子體腔室22的氣態物質的等離子體激活原子及離子可分解工件的表面上的有機污染物，之後這些污染物可從等離子體腔室22排出。等離子體清潔可作為所謂的「預清潔」製程的一部分來執行，其中在工件在製程腔室24中經受離子植入之前，可從工件的表面移除天然氧化物及其他表面污染物。預清潔可防止或減輕離子植入期間不期望的氧原子「撞入(knock-in)」到工件中，以相對於在不存在預清潔製程的情況下植入的工件產生更高品質、更好性能的工件。
等離子體腔室22還可用於對工件執行等離子體增強型化學氣相沉積(PECVD)，其中氣態物質可沉積在工件的表面上以在上面產生期望材料的薄膜。舉例來說，在製程腔室24中使工件經受離子植入製程之前，可將期望化學物質的薄膜施加到工件的表面，其中離子植入製程可激活所施加的化學物質或者與所施加的化學物質相互作用，以在工件的表面上實現期望的組成或條件。在特定實例中，可將期望材料的薄摻雜層施加到工件的表面上，之後可在製程腔室24中用離子將所施加的層撞入到工件中。在另一實例中，可通過PECVD來施加預清潔化學物質，以移除天然氧化物。在另一實例中，可在工件的離子植入之後執行PECVD，以實現用期望材料的膜覆蓋工件(例如，氮化矽覆蓋以防止激活退火期間摻雜劑因揮發損耗)。
等離子體腔室22也可用於在離子植入之後對工件執行等離子體退火。舉例來說，由等離子體源34產生的高能等離子體可用於以預定速率將工件加熱到預定溫度，以便從工件移除缺陷。舉例來說，退火製程可包括將工件升溫至500到600攝氏度的中間溫度，且然後以150攝氏度/秒的速率升溫至850到1050攝氏度之間的峰值溫度。本公開並不僅限於此。
在其他實例中，等離子體腔室22可用於在離子植入之前及/或離子植入之後對工件執行各種其他製程。這些包括且不限於加熱、冷卻及刻蝕。
參照圖2，表示示出根據本公開的操作上述架構10的示例性方法的流程圖。現在將參照圖1中所示本公開的實施例詳細闡述所述方法。
在示例性方法的方塊100處，大氣機器人25可將工件從載體12中的一者移動到入口真空加載鎖16。然後可關閉入口真空加載鎖16的閥門16a且可將入口真空加載鎖16抽氣(pumped down)到真空壓力或接近真空壓力(例如，1×10-3托)。然後可打開入口真空加載鎖16的閥門16b。
在示例性方法的方塊110處，真空機器人26可將工件從入口真空加載鎖16移動到計量組件28，在計量組件28處可測量或檢測工件的各個方面及特徵。舉例來說，可使用計量組件28來檢測或測量工件的表面上的天然氧化物及其他污染物，以確定將在等離子體腔室22中對工件執行什麼製程(如下所述)。
在示例性方法的方塊120處，真空機器人26可將工件從計量組件28移動到等離子體腔室22的壓板32。然後可關閉等離子體腔室22的閥門31，且可在等離子體腔室22內建立期望的壓力(例如，通過打氣(pump up)或抽氣)，以用於在等離子體腔室22內對工件執行一個或多個離子植入前製程。在各種實例中，如上所述在等離子體腔室22中，工件可經受等離子體清潔製程、PECVD製程、預加熱製程等。本公開並不僅限於此。
在示例性方法的方塊130處，可打開等離子體腔室22的閥門31，且真空機器人26可將工件從等離子體腔室22的壓板32移動到計量組件28，在計量組件28處可測量或檢測工件的各個方面及特徵。舉例來說，可使用計量組件28來判斷在等離子體腔室22中執行的等離子體清潔製程是否有效地將工件上的表面污染物減少到低於預定污染閾值的水準。
在示例性方法的方塊140處，真空機器人26可將工件從計量組件28移動到對齊站27。對齊站27可用於在製程腔室24中在處理之前以期望的方式對工件進行取向(如下所述)。舉例來說，對齊站27可檢測工件上凹口或其他標記的位置且可旋轉或以其他方式對工件進行重新取向以將凹口移動到預定位置中。
在示例性方法的方塊150處，真空機器人26可將工件從對齊站27移動到製程腔室24中的壓板30。如上所述，然後可在製程腔室24內使工件經受一個或多個離子植入製程。
在示例性方法的方塊160處，真空機器人26可將工件從 製程腔室24的壓板30移動到等離子體腔室22的壓板32。然後可關閉等離子體腔室22的閥門31且可在等離子體腔室22內建立期望的壓力(例如，通過打氣或抽氣)，以用於在等離子體腔室22內對工件執行一個或多個離子植入後製程。在各種實例中，如上所述在等離子體腔室22中，可使工件經受等離子體清潔製程、PECVD覆蓋製程、等離子體退火製程、刻蝕製程等。本公開並不僅限於此。
在示例性方法的方塊170處，可打開等離子體腔室22的閥門31，且真空機器人26可將工件從等離子體腔室22的壓板32移動到計量組件28，在計量組件28處可測量或檢測工件的各個方面及特徵。舉例來說，可使用計量組件28來確定在等離子體腔室22中執行的離子植入後製程的效果。
在示例性方法的方塊180處，真空機器人26可將工件從計量組件28移動到出口真空加載鎖18。然後可關閉出口真空加載鎖18的閥門18b且可將出口真空加載鎖18打氣到大氣壓力。然後可打開出口真空加載鎖18的閥門18a且大氣機器人25可將工件從出口真空加載鎖18移動到載體12中的一者。
參照圖3，示出根據本公開的另一示例性實施例的束線架構200(下文中為「架構200」)。架構200可類似於上述架構10且可包括類似於上述架構10的對應組件的一個或多個載體212、緩衝器214、入口真空加載鎖216、出口真空加載鎖218、晶圓搬送腔室220、等離子體腔室222及製程腔室224。
與上述架構10不同，架構200可進一步包括設置在晶圓搬送腔室220與等離子體腔室222之間的傳送腔室223。可分別在晶圓搬送腔室220與傳送腔室223的接合處以及在傳送腔室223與等離子體腔室222的接合處實施閥門231、233，以利於它們之間的氣密分離。可在傳送腔室223內設置傳送機器人235且可用於在晶圓搬送腔室220與等離子體腔室222之間傳送工件。傳送腔室223可附加地容置類似於上述計量組件28的各種計量組件228(例如，計量組件228可相對於架構10的配置被重新定位到傳送腔室223)。架構200可以類似於上述及圖2中所示的方法的方式操作。
參照圖4，示出根據本公開另一示例性實施例的束線架構300(下文中為「架構300」)。架構300可類似於上述架構200且可包括類似於架構200的對應組件的一個或多個載體312、緩衝器314、晶圓搬送腔室320、等離子體腔室322、製程腔室324及傳送腔室323。與上述架構200不同，架構300可包括其中可在載體312與晶圓搬送腔室320之間傳送工件的組合的入口出口真空加載鎖317，而不是具有單獨的入口及出口的真空加載鎖。另外，傳送腔室323及等離子體腔室322可位於晶圓搬送腔室320的與入口出口真空加載鎖317、緩衝器314及載體312相同的側上。架構300可以類似於上述及圖2中所示的方法的方式操作。
如所屬領域中的普通技術人員將理解，上述架構10、200及300以及上述方法提供關於半導體工件的束線處理的許多優 點。舉例來說，具體到架構10(且類似地在架構200及300中提供)，由於等離子體腔室22及製程腔室24直接連接到晶圓搬送腔室20，因此當工件在等離子體腔室22與製程腔室24之間傳送時，可在使工件經受離子植入製程之前及/或離子植入製程之後立即對工件執行例如等離子體清潔、PECVD及等離子體退火等製程，同時避免將工件暴露於大氣(其中污染物可能被引入到工件)。此外，由於等離子體腔室22是獨立的且與製程腔室24分開，因此與腔室中的一者相關聯的許多變量(例如，壓力、材料、化學物質等)可改變為在此種腔室內完成期望製程，且不需要考慮這些變量對腔室中的另一者的影響。
本公開的範圍不受本文所述具體實施例限制。實際上，根據以上說明及附圖，對所屬領域中的普通技術人員來說，除本文所述實施例及潤飾以外的本公開其他各種實施例及對本公開的各種潤飾也將顯而易見。因此，這些其他實施例及潤飾都旨在落於本公開的範圍內。此外，本文中已在用於具體目的的具體環境中的具體實施方式的上下文中闡述了本公開，所屬領域中的普通技術人員將認識到，其適用性並不僅限於此。本公開可出於任意數目的目的而在任意數目的環境中有益地實施。因此，所附發明申請專利範圍應根據本文所述本公開的全部廣度及精神來加以解釋。
10:束線架構/架構
12:載體
14:緩衝器
16:入口真空加載鎖
16a、16b、18a、18b、31:閥門
18:出口真空加載鎖
20:晶圓搬送腔室
22:等離子體腔室
24:製程腔室
25:大氣機器人
26:真空機器人
27:對齊站
28:計量組件
30、32:平台/壓板
34:等離子體源

Claims (18)

  1. 一種束線架構，包括：晶圓搬送腔室；傳送腔室，直接耦合到所述晶圓搬送腔室，且能夠相對於所述晶圓搬送腔室進行密封；等離子體腔室，直接耦合到所述傳送腔室且容納等離子體源，以用於對工件執行離子植入前製程及離子植入後製程中的至少一者，所述等離子體腔室能夠相對於所述傳送腔室進行密封，所述傳送腔室只有耦合到一個所述等離子體腔室；以及製程腔室，直接耦合到所述晶圓搬送腔室且適於對工件執行離子植入製程。
  2. 如請求項1所述的束線架構，進一步包括閥門，所述閥門設置在所述晶圓搬送腔室與所述傳送腔室之間，以用於將所述傳送腔室與所述晶圓搬送腔室及所述製程腔室密封隔絕。
  3. 如請求項1所述的束線架構，進一步包括真空機器人，所述真空機器人設置在所述晶圓搬送腔室內以用於在所述傳送腔室與所述製程腔室之間移動工件。
  4. 如請求項1所述的束線架構，其中所述等離子體腔室適於執行等離子體預清潔製程、等離子體增強型化學氣相沉積製程、等離子體退火製程、預加熱製程、及刻蝕製程中的至少一者。
  5. 如請求項1所述的束線架構，其中所述等離子體腔室內的壓力與所述製程腔室內的壓力能夠彼此獨立地改變。
  6. 如請求項1所述的束線架構，進一步包括設置在所述晶圓搬送腔室內的計量組件。
  7. 如請求項1所述的束線架構，進一步包括傳送機器人，所述傳送機器人設置在所述傳送腔室內以用於在所述晶圓搬送腔室與所述等離子體腔室之間移動工件。
  8. 如請求項1所述的束線架構，進一步包括設置在所述傳送腔室內的計量組件。
  9. 如請求項1所述的束線架構，進一步包括真空加載鎖，所述真空加載鎖耦合到所述晶圓搬送腔室以利於在大氣環境與所述晶圓搬送腔室之間傳送工件。
  10. 如請求項1所述的束線架構，進一步包括設置在所述晶圓搬送腔室內的對齊站。
  11. 一種束線架構，包括：晶圓搬送腔室；真空加載鎖，耦合到所述晶圓搬送腔室，以利於在大氣環境與所述晶圓搬送腔室之間傳送工件；傳送腔室，直接耦合到所述晶圓搬送腔室，且能夠相對於所述晶圓搬送腔室進行密封；等離子體腔室，直接耦合到所述傳送腔室且容納等離子體源，以用於對工件執行等離子體預清潔製程、等離子體增強型化學氣相沉積製程、等離子體退火製程、預加熱製程、及刻蝕製程中的至少一者，所述等離子體腔室能夠相對於所述傳送腔室進行 密封，所述傳送腔室只有耦合到一個所述等離子體腔室；製程腔室，直接耦合到所述晶圓搬送腔室且適於對工件執行離子植入製程；以及閥門，設置在所述晶圓搬送腔室與所述傳送腔室之間，以用於將所述傳送腔室與所述晶圓搬送腔室及所述製程腔室密封隔絕，其中所述傳送腔室內的壓力與所述製程腔室內的壓力能夠彼此獨立地改變。
  12. 一種操作束線架構的方法，所述束線架構包括晶圓搬送腔室、直接耦合到所述晶圓搬送腔室且能夠相對於所述晶圓搬送腔室進行密封的傳送腔室、直接耦合到所述傳送腔室且能夠相對於所述傳送腔室進行密封的等離子體腔室及直接耦合到所述晶圓搬送腔室的製程腔室，所述傳送腔室只有耦合到一個所述等離子體腔室，所述方法包括：將工件從所述晶圓搬送腔室移動到所述傳送腔室中；相對於所述晶圓搬送腔室密封的所述傳送腔室；將所述工件從所述傳送腔室移動到所述等離子體腔室中；對所述工件執行離子植入前製程及離子植入後製程中的至少一者；以及將所述工件從所述晶圓搬送腔室移動到所述製程腔室中且對所述工件執行離子植入製程。
  13. 如請求項12所述的操作束線架構的方法，其中對所述工件執行離子植入前製程及離子植入後製程中的至少一者包 括：在對所述工件執行離子植入製程之前，對所述工件執行等離子體預清潔製程、等離子體增強型化學氣相沉積製程、及預加熱製程中的至少一者。
  14. 如請求項12所述的操作束線架構的方法，其中對所述工件執行離子植入前製程及離子植入後製程中的至少一者包括：在對所述工件執行離子植入製程之後，對所述工件執行等離子體增強型化學氣相沉積製程、等離子體退火製程、及刻蝕製程中的至少一者。
  15. 如請求項12所述的操作束線架構的方法，進一步包括：將所述等離子體腔室相對於所述傳送腔室、所述晶圓搬送腔室及所述製程腔室進行密封。
  16. 如請求項15所述的操作束線架構的方法，進一步包括：相對於所述晶圓搬送腔室及所述製程腔室內的壓力改變所述等離子體腔室內的壓力。
  17. 如請求項12所述的操作束線架構的方法，進一步包括：將所述工件移動到計量組件且測量所述工件上的表面污染物及表面特徵中的至少一者。
  18. 如請求項12所述的操作束線架構的方法，進一步包括：將所述工件移動到耦合到所述晶圓搬送腔室的真空加載鎖中並在大氣環境與所述晶圓搬送腔室之間傳送所述工件。
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