JP5004059B2 - 枚葉式基板研磨装置 - Google Patents
枚葉式基板研磨装置 Download PDFInfo
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- JP5004059B2 JP5004059B2 JP2008295492A JP2008295492A JP5004059B2 JP 5004059 B2 JP5004059 B2 JP 5004059B2 JP 2008295492 A JP2008295492 A JP 2008295492A JP 2008295492 A JP2008295492 A JP 2008295492A JP 5004059 B2 JP5004059 B2 JP 5004059B2
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- 239000000758 substrate Substances 0.000 title claims description 201
- 238000005498 polishing Methods 0.000 title claims description 112
- 238000004140 cleaning Methods 0.000 claims description 80
- 239000007788 liquid Substances 0.000 claims description 38
- 239000013013 elastic material Substances 0.000 claims description 3
- 230000002265 prevention Effects 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 31
- 238000007517 polishing process Methods 0.000 description 25
- 238000011084 recovery Methods 0.000 description 21
- 239000008367 deionised water Substances 0.000 description 15
- 229910021641 deionized water Inorganic materials 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 230000003750 conditioning effect Effects 0.000 description 13
- 239000000126 substance Substances 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 238000000227 grinding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
<実施の形態>
図1は、本発明による枚葉式基板研磨装置1の斜視図であり、図2は、図1の処理容器100と基板支持ユニット200の側断面図である。
200 基板支持ユニット
210 支持プレート
220 回転軸
230 回転駆動部
240 真空プレート
250 駆動部材
310、320 洗浄ユニット
400 研磨ユニット
500 パッドコンディショニングユニット
Claims (5)
- 基板を研磨する装置であって、
処理室と、
前記処理室内に設けられ、基板を支持する基板支持ユニットと、
前記基板を研磨する研磨ユニットと、
研磨された前記基板を洗浄する洗浄ユニットと、を含み、
前記基板支持ユニットは、
前記基板を真空吸着する真空プレートと、
前記真空プレートの下部に離隔して配置され、前記基板をクランプするチャック部材が設けられた支持プレートと、
前記チャック部材が前記真空プレートに載置される前記基板を前記真空プレートから上向き離隔した状態に支持するように前記真空プレートまたは前記支持プレートを上下方向に移動させる駆動部材と、を含み、
前記駆動部材は、
前記支持プレートの下に上下方向に沿って互いに面するように配置され、互いに磁気的反発力が作用するように磁極が配列される上部磁石部材及び下部磁石部材と、
一端が前記真空プレートに連結され他端が前記上部磁石部材に連結される連結部材と、
前記下部磁石部材を上下方向に移動させる直線駆動機と、を含み、
前記洗浄ユニットは、
前記基板支持ユニットの一側に設けられ、前記基板の上面を洗浄する第1洗浄ユニットと、
前記支持プレートの上面中心部に設けられ、前記基板の下面に洗浄液を供給する第2洗浄ユニットと、を含み、
前記真空プレートの中心部には前記洗浄液が前記第2洗浄ユニットから前記基板の下面に供給されるように開口部が形成され、
前記支持プレートのチャック部材が前記真空プレートに載置される前記基板を前記真空プレートから上向き離隔して支持した状態で、
前記第1洗浄ユニットと前記第2洗浄ユニットによって、研磨された前記基板の上面と下面を洗浄処理するように設けたことを特徴とする枚葉式基板研磨装置。 - 前記チャック部材は、前記基板の下面を支持する支持ピンと、前記基板の側面を支持するチャックピンと、を含み、
前記真空プレートには、前記真空プレートの上下移動時に前記支持ピンと前記チャックピンとが挿入されるように孔が貫通形成されることを特徴とする請求項1に記載の枚葉式基板研磨装置。 - 前記連結部材は、前記支持プレートに貫通形成される孔に挿入され設けられる棒形状であり、
前記棒形状の連結部材を囲むコイル形状の弾性部材が前記支持プレートと前記上部磁石部材との間に設けられることを特徴とする請求項1又は2に記載の枚葉式基板研磨装置。 - 前記下部磁石部材が既設定の高さに上下移動するか否かを検出する感知部材をさらに含むことを特徴とする請求項1〜3のいずれか一項に記載の枚葉式基板研磨装置。
- 前記真空プレートのエッジには、真空吸着される前記基板の離脱を防止するように離脱防止顎が突出形成され、
前記真空プレートの上面には、真空吸着される前記基板と前記真空プレートとの間の異物によって前記基板が変形されることを防止するように、緩衝作用をする弾性材質の緩衝部材が設けられることを特徴とする請求項1〜4のいずれか一項に記載の枚葉式基板研磨装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080062444A KR101036605B1 (ko) | 2008-06-30 | 2008-06-30 | 기판 지지 유닛 및 이를 이용한 매엽식 기판 연마 장치 |
KR10-2008-0062444 | 2008-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010012591A JP2010012591A (ja) | 2010-01-21 |
JP5004059B2 true JP5004059B2 (ja) | 2012-08-22 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008295492A Active JP5004059B2 (ja) | 2008-06-30 | 2008-11-19 | 枚葉式基板研磨装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8113918B2 (ja) |
JP (1) | JP5004059B2 (ja) |
KR (1) | KR101036605B1 (ja) |
CN (1) | CN101618520B (ja) |
TW (1) | TWI404166B (ja) |
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