TW559582B - Device and method for polishing, and method and device for manufacturing semiconductor device - Google Patents

Abstract

A polishing device (100) is disclosed, comprising a drum (120), a chuck table (131) rotatingly holding a semiconductor wafer (100), and a pressing cylinder (170) moving the chuck table (131) so that the edge part (11) of the semiconductor wafer (10) comes into contact with a polished surface (112A) at a specified angle (theta2), in which the drum (120) further comprising a polishing member (122) having a generally conical polishing surface (122A) on the inner surface thereof and the polishing member (122) is formed rotatably around a rotating shaft (120R), whereby, when the edge part of a circular substrate is polished, slurry polishing fluid can be efficiently recovered, and repair and inspection operations can be performed safely.

Description

A7 559582 V. Description of the invention (/) [Technical Field] ---------------- (Please read the precautions on the back before filling this page) The present invention relates to honing devices, honing A polishing method, a manufacturing method and a manufacturing device of a semiconductor element are particularly a honing device and a honing method used for honing an edge portion of a circular substrate such as a semiconductor wafer, an optical lens, a magnetic disk substrate, and the like. [Known technology] It is known that the technology of honing the edge portions of circular substrates such as semiconductor wafers, optical lenses, and magnetic disk substrates with a desired flatness is well known. In particular, before the semiconductor wafer is shipped, the surface (element forming surface), the back surface, and the edge are honed, and the honed semiconductor wafer is used in the manufacturing process of the semiconductor element. The formation surface forms an element structure formed of a semiconductor film and a metal film. In this case, a semiconductor wafer formed of a semiconductor film or a metal film is subjected to chemical or mechanical honing (hereinafter referred to as "CMP" honing) to planarize it after film formation. After that, the substances (various substances constituting the semiconductor film and the metal film) adhering to the entire semiconductor wafer (the front surface, the back surface, and the edge portion) are removed by cleaning. However, in recent years, it has been known that semiconductor elements that are intended to be high-density have an influence on the characteristics of the element due to the remaining unnecessary substances. In addition, in cleaning only the entire semiconductor device described above, it is impossible to sufficiently remove unnecessary substances adhered to the semiconductor wafer without affecting the device characteristics. In particular, even if the edge portion is cleaned, unnecessary substances tend to remain. This is because the edge surface of the semiconductor wafer has more concavities than the front and back. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 559582 A7 ____ B7_______ V. Description of the invention (2) (Please Please read the precautions on the back before filling in this page.) The convex part 'so the unnecessary substance can easily penetrate, and the unnecessary substance adhering to the uneven part' is difficult to remove even after washing. However, the conventional method does not disclose a method for removing the unnecessary material at the edge portion of the semiconductor wafer in a short time. However, generally speaking, a honing device for honing an edge portion is disclosed in, for example, Japanese Patent Application Laid-Open No. 9-85600. As shown in FIG. 20, the conventional honing device 50 includes a drum 51 that rotates around a rotation shaft 51R by a motor, a honing member 52 attached to the drum 51, an inclined table 56, and The holding stage 57 of the semiconductor wafer 10 is sucked. --Line · When honing the edge portion 11 of the semiconductor wafer 10, the inclined table 56 is inclined like a dotted line, and the semiconductor wafer 10 attracted to the holding table 57 contacts the drum 51 at a predetermined angle.之 honed member 52. At this time, at the contact portion between the edge portion 11 and the honing member 52, a mud-like honing liquid is supplied through the nozzle 54. Reference numeral 58 in the figure is used to cover the entire upper cover of the honing apparatus 50. Since the mud-shaped honing liquid contains a chemical substance harmful to the human body, it is necessary to prevent the honing device 50 from scattering. In order to prevent scattering, although the drum 51 is covered with a cover 53, a window 53A is provided in the cover 53 to allow the edge portion 11 to contact the honing member 52. Therefore, the mud-like honing liquid will flow from this window 53A to Scattered from the outside. The scattered mud-like honing fluid may adhere to the honing device 50 and cause contamination. In addition, if it is dried over time, the components of the mud-like honing liquid will float in the atmosphere of the honing device 50, which will also cause the semiconductor wafer to be in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 559582 _ B7 _ 5. Description of the invention ($) Pollution. (Please read the precautions on the back before filling in this page.) Also, after the mud-like honing fluid is collected, discarded and reused, in the conventional honing device 50, the scattered mud-like honing fluid will adhere. It is difficult to achieve high recovery efficiency due to the inner wall surface. Furthermore, in the case of maintenance and inspection operations of the honing device, if harmful mud-like honing liquid is stuck inside the device, the operation cannot be performed safely. In addition, as in the conventional honing device 50, since the honing surface 52A of the honing member 52 is formed in a cylindrical shape on the surface of the drum 51, the upper and lower inclined surfaces of the edge portion 11 of the semiconductor wafer 10 are honed. During the grinding, if the semiconductor wafer 10 adsorbed on the holding plate 57 is temporarily detached, it must be adsorbed again. In the conventional honing apparatus 50, since the edge portion 11 of the semiconductor wafer 10 is in point contact with the cylindrical honing surface 52A, it takes a long time to hob the entire periphery of the edge portion 11 of the semiconductor wafer 10. . In the manufacturing process of such a semiconductor device, even if the honing of the edge portion 11 is to be performed, the honing time is long and the productivity is low. [Disclosure of the Invention] The present invention has been made in view of this, and its first object is to provide a honing device that does not scatter the mud-like honing liquid to the outside when honing the edge portion of the substrate. The second object of the present invention In order to provide a method and a device for manufacturing semiconductor devices, the semiconductor devices are intended to effectively remove the residual substances attached to the edges of semiconductor wafers and improve the yield. ____ 5 __-------------- _ This paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) 559582 a7 ____ B7____ —-1 ~ ^ V. Description of the invention (>) The invention A third object is to provide a honing device capable of honing an edge portion of a circular base in a short time. Γ Please read the precautions on the back before filling in this page) The fourth purpose of the present invention is to provide a method for manufacturing semiconductor devices, which can effectively and quickly remove residual substances adhering to the edges of semiconductor wafers. A method for manufacturing a semiconductor device that improves the yield, thereby increasing the productivity. A honing device according to the first invention for achieving the above object includes a honing member having a substantially conical honing surface on an inner surface; and a rotating portion that allows the honing member to follow the substantially conical honing surface. A rotation portion of the shaft rotates; a holding portion is used to hold the substrate while rotating; and a moving portion moves the holding portion so that the edge portion of the substrate contacts the honing surface at a predetermined angle. Line · According to the present invention, since the edge portion of the substrate is honed while being in contact with a honing member having a substantially conical honing surface on the inner surface, even if a honing liquid is supplied during honing, It scatters outward. In this honing device, it is preferable that the honing member is composed of a first honing portion and a second honing portion, and the honing surface of the first honing portion is lowered in the axial direction of the rotating portion. Enlarged substantially conical shape The honing surface of the second honing portion is a substantially conical shape that expands upward in the axial direction of the rotating portion. The moving portion moves the holding portion to select an edge portion of the substrate. It is in contact with the honing surface of the first honing portion and the honing surface of the second honing portion. As a result, since the honing member is composed of: the first honing portion having a substantially conical honing surface that expands downward with respect to the axial direction; and the second honing—one—. F \ Table paper dimensions are applicable to China National Standard (CNS) A4 specification (210 X 297 mm) A7 559582 ____B7_____ V. Description of the invention (f) (Please read the precautions on the back before filling in this page) The section has a substantially conical shape that expands upward relative to the axis direction Since the shape of the honing surface is formed, it is possible to hob the upper inclined surface and the lower inclined surface of the edge portion of the substrate without inverting the substrate. Furthermore, it is preferable to provide a honing liquid supply unit for supplying the honing liquid to the aforementioned honing member, and a honing liquid recovery unit for covering the aforementioned substantially conical space from below. In addition, it is preferable that the honing surface of the honing member is disposed so as to be inclined at 30 to 70 degrees with respect to a rotation axis of the rotating portion at least in a portion in contact with the substrate. As a result, since the honing surface of the honing member is disposed at least in a portion which is in contact with the substrate, it is inclined by 30 to 70 degrees with respect to the rotation axis. Therefore, the diameter of the substrate to be honed can be as desired. By setting the angles of the upper slope and the lower slope, the device can be miniaturized. The honing device according to the second invention for achieving the aforementioned object is an edge portion of a honing substrate, which is characterized by having a first honing portion having a first honing surface for honing an inclined surface on an upper side of the edge portion; The second honing portion has a second honing surface for honing the inclined surface on the lower side of the edge portion; and a contact portion that contacts the inclined surface on the upper side of the edge portion of the substrate to the first honing surface at a predetermined angle. And, the inclined surface on the lower side is brought into contact with the second honing surface at a predetermined angle. According to the present invention, since the edge honing of the circular substrate is performed by using the first honing surface of the first honing portion and the second honing surface of the second honing portion, the edge honing of the circular substrate can be shortened. Processing time. In this honing device, it is preferable that the aforementioned first honing unit has the first honing 7 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 559582 A7 __-- _ B7____ V. Invention Description (Stone) (Please read the precautions on the back before filling out this page) The component (the first cylindrical honing surface with a substantially cylindrical shape on the inner surface), and can be used on the first cylindrical honing surface with the substantially cylindrical shape The shaft rotates around; the second honing section has a second honing member (the inner surface has a substantially cylindrical second honing surface that is eccentrically positioned with respect to the shaft), and can be mounted on the substantially cylindrical shape. The second honing surface rotates around the shaft; and has a holding portion for holding the substrate while rotating. Accordingly, since the honing is performed on the first cylindrical honing surface of the first honing portion and the second cylindrical honing surface of the second honing portion, the edge portion can be enlarged. Contact area with the first honing surface and the second honing surface, and shorten the edge honing processing time. The honing device according to the third invention for achieving the aforementioned object includes a honing belt having one or more honing surfaces formed thereon; a driving unit for driving the honing belt; and a belt adjusting unit for correspondingly performing The radius of the honing substrate is used to adjust the radius of curvature of the honing direction. According to the present invention, since the honing belt having both the first honing surface and the second honing surface is formed, the curvature radius of the first and second honing surfaces can be freely adjusted, so regardless of the radius of the substrate, This edge portion can be honed. In addition, since the contact area between the edge portion of the substrate and the first honing surface and the second honing surface can be freely adjusted, the contact area can be enlarged and the processing time can be shortened. The honing belt forms at least a first honing surface and a second honing surface; and has a belt adjusting portion that can adjust the radius of curvature of at least one of the first and second honing surfaces in accordance with the radius of the substrate for honing. _ This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 559582 A7 B7 V. Description of the invention (7) (Please read the precautions on the back before filling this page) The belt honing belt is used to properly adjust the honing belt; ^ The radius of curvature of the first honing surface and the second honing surface, so that even for circular substrates with a phase dance diameter, edge honing can be performed at the same time. In order to achieve the aforementioned object, the honing method of the fourth invention includes: a first honing section (having a first cylindrical honing surface and honing an inclined surface on the upper side of the edge part of Motoyo); A step of rotating the axis of the first cylindrical honing surface in the aforementioned cylindrical shape; and surrounding the second honing portion (having a substantially cylindrical second honing surface and honing the inclined surface below the edge portion); A step of rotating the axis of the aforementioned substantially cylindrical second honing surface; and making the inclined surface on the upper side of the edge portion of the substrate and the first honing surface, and the inclined surface on the lower side of the edge portion and the second honing surface, Steps of selective or simultaneous contact. According to the present invention, since the edge portion of the substrate is honed with the first cylindrical honing surface of the first honing portion and the second cylindrical honing surface of the second honing portion, The contact area between the aforementioned edge portion and the first honing surface and the -line-second honing surface can be enlarged, and the processing time of the edge honing can be further shortened. The semiconductor wafer honing of the fifth invention for achieving the aforementioned object The method includes the steps of holding a semiconductor wafer while rotating it, and contacting an edge portion of the semiconductor wafer with a honing member (having a substantially conical honing surface on the inner surface around a predetermined angle) around a predetermined angle. The conical honing surface rotates around the axis) of the aforementioned honing surface. The method for manufacturing a semiconductor device according to the sixth invention for achieving the aforementioned object includes the steps of continuously honing the edge portion of the semiconductor wafer and CMP honing the element formation surface. --- 9 ------ This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 559582 A7 _____B7 __ V. Description of Invention (g) (Please read the notes on the back before filling (This page) A method of manufacturing a semiconductor device according to the seventh invention for achieving the aforementioned object includes continuously performing honing of the edge portion of the semiconductor wafer by the aforementioned fifth invention and CMP honing of the element formation surface. According to the fifth invention and the sixth invention, since the honing of the edge portion of the semiconductor wafer and the CMP honing of the element formation surface are performed efficiently in the element manufacturing process, The manufacture of semiconductor devices can also effectively remove unnecessary substances attached to semiconductor wafers. In particular, the substances remaining on the edge portions can reduce the influence on the formation of components in subsequent processes. In order to achieve the aforementioned object, the method for manufacturing a semiconductor device according to the eighth invention is to continuously perform CMP honing of the element formation surface of the semiconductor wafer, and honing the edges by the honing method of the aforementioned fourth invention. According to the present invention, since the honing of the edge portion of the semiconductor and the bulk wafer and the CMP honing of the element formation surface are performed efficiently on the element manufacturing process, even semiconductor devices that are intended to achieve high density The manufacture can also effectively remove unnecessary substances attached to the semiconductor wafer. In particular, for substances remaining adhered to the edge portion, the influence of subsequent processes on the formation of components can be reduced. In order to achieve the foregoing object, the semiconductor device manufacturing device of the ninth invention is continuously provided: a first honing unit for honing the edge portion of the semiconductor wafer; and a second honing unit for honing the semiconductor wafer. Element forming surface: and a cleaning chamber for cleaning the semiconductor wafer honed by the second honing unit. According to the present invention, since the semiconductor paper size of the first honing unit can be continuously used, the Chinese paper standard (CNS) A4 (210 X 297 mm) is applicable. 559582 A / ____B7_____ 5. Description of the invention (") The edge of the wafer It is possible to shorten the manufacturing time of semiconductor components by honing the semiconductor components, honing the component forming surface of the semiconductor wafer in the second honing unit, and cleaning the semiconductor wafer in the cleaning room. To increase the productivity. [Simplified description of the drawing] FIG. 1 is a cross-sectional view showing the structure of a honing apparatus according to the first embodiment of the present invention. FIG. 2 is a perspective view of a state where a peripheral portion of a semiconductor wafer is honed by a honing device. Fig. 3 is an explanatory diagram of a force acting on a mud-like honing liquid adhering to a honing surface. FIG. 4 is a diagram showing a shape of an edge portion of a semiconductor wafer. Fig. 5 is an explanatory view of an angle between a honing member and a semiconductor wafer during edge honing. Fig. 6 is an explanatory diagram showing the relationship between the inclination angle of the honing surface and the angle of the semiconductor wafer. Fig. 7 is a schematic view showing a method of bonding an inner wall of a drum of a honing cloth constituting a honing member. FIG. 8 is a schematic diagram of an example in which a honing member is provided on a drum. FIG. 9 is a schematic diagram showing the shape of an opening provided in the auxiliary plate. Fig. 10 is a view showing a honing apparatus according to a second embodiment of the present invention. Fig. 11 is a sectional view showing the structure of a honing apparatus 100 according to a third embodiment of the present invention. Figure 12 shows the state of honing the edge of a semiconductor wafer with a honing device. 11_______ The size of the paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back first) (Fill in this page again)

559582 A7 ~ --__ 57 —------ _ · One Five, the three-dimensional view of the description of the invention (丨.). Fig. 13 is a structural view of a honing apparatus according to a fourth embodiment of the present invention. Fig. 14 is a perspective view of a main part of the honing apparatus according to a fourth embodiment of the present invention. Fig. 15 is a sectional view showing a positional relationship between a honing belt and a coma member. Fig. 16 is a perspective view showing a coma member. FIG. 17 is a perspective view showing a coma member in which rollers are arranged on a curved surface. FIG. 18 is a diagram showing a semiconductor manufacturing apparatus according to an embodiment of the present invention. FIG. 19 is a schematic diagram showing a process of using a semiconductor manufacturing apparatus for a semiconductor element. FIG. 20 is a view showing a conventional honing device 50. FIG. [Preferred Embodiment of the Invention] Although the present invention will be described below with reference to a preferred embodiment, the scope of the present invention is not limited to the description. (First Embodiment) Hereinafter, a first embodiment of the present invention will be described with reference to Figs. 1 to 9. FIG. 1 is a cross-sectional view of the honing device 100 according to this embodiment. As shown in the figure, the honing device 100 is composed of: a drum (rotating part) 120, a tilting table 130, an upper cover 140, A polishing fluid recovery barrel (honing fluid recovery unit) 150, a drum rotation unit 160, a pressure cylinder 170, and the like are configured. Among them, the drum 120 is fixed to ________12 by bearing 121 in a freely rotatable manner. One-by-one paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm). (Please read the precautions on the back before filling this page) · · 丨 Line · A7 559582 ___ —__ B7____ 5. Description of the invention (") Frame 102 (fixed on the workbench 101). (Please read the precautions on the back before filling in this page.) Inside the drum 120, a honing member 122 is formed (the honing surface 120A is formed with a substantially conical shape that is enlarged downward). The honing member 122 is made of a foaming type honing pad (for example, SUBA400 (trade name) manufactured by Rosnel Nida). A pulley 163 is provided on the outer periphery of the drum 120, and a pulley 162 attached to the pulley 163 and the drum rotation motor 161 is suspended from the drive belt 164. The driving belt 164 is driven by the drum rotation motor 161, so that the drum 120 can rotate around the axis (rotation axis 120R) of the honing surface i20A, which has been enlarged on the lower side and has a substantially conical shape. A zigzag shaft 123 is attached to the drum 120 to cover the gap with the frame 102. The inclined table 130 is disposed inside the drum 120. The tilt table 130 includes a holding table (holding section) 131 that holds a semiconductor wafer (substrate) 10 while rotating, an arm section 135 on which the holding table 131 is mounted, a table rotation motor 132, and an angle for adjusting the arm section 135. The angle adjustment section 133 and the vertical adjustment section 134. By the aforementioned angle adjusting portion 133, the semiconductor wafer 10 which is sucked and held on the holding table 131 can be tilted at a predetermined angle (2) with respect to the honing surface 122A. The pressing cylinder (moving part) 170 moves the entire tilt table 130 so that the semiconductor wafer 10 attracted to the holding table 131 is pressed against the honing surface 122A with a certain force. In the honing apparatus 100 configured as described above, the upper part of the drum 120 is opened (the upper open end 120A), so that it faces the semiconductor wafer 10 and is supplied with a mud-shaped honing by a nozzle (honing liquid supply unit) 182. Liquid (250ml / min). This ---- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 559582 A7 ---- BL___ V. Description of the invention (θ) The nozzle 182 is connected to the honing fluid supply pipe 181, and can be flexible in any direction. Here, the upper open end 120A of the drum 120 facing the edge portion 11 ° of the semiconductor wafer 10 is covered by the upper cover 140. In the honing apparatus 100, the lower part of the drum 120 is opened (the lower open end 120B). A drum side edge 126 is connected to the lower open end 120B, and a honing liquid recovery bucket 150 ′ is provided below the work table 101 side to cover the lower open end 120B (and the drum side edge 126). All. The honing liquid recovery bucket 150 is arranged at a certain interval so as not to contact the rotating drum 120, and a drainage pipe 191 and an suction pipe 192 constituting the bottom thereof are installed. Here, the suction pipe 192 is provided inside the drum 120 (in the atmosphere) by sucking a mud-like honing liquid in a mist form with a vacuum pump (not shown) or the like. Since the mud-like honing liquid supplied from the nozzle 182 toward the edge portion 11 is attracted by the suction pipe 192, the mud-like honing liquid is not scattered upward from the upper open end 120A. Next, the relationship between the drum 120, the inclined table 130, and the drum rotating portion 160 constituting the honing apparatus 100 will be described with reference to Figs. 2 and 3. The honing surface 122A in the drum 120 is in contact with the edge portion 11 (the portion indicated by the circle S in the dotted line in FIG. 2) and is inclined at a predetermined inclination angle 0 1 (30 with respect to the rotation axis 120R ~ 70 degrees) Tilt (the optimum range in Figure 3 is about 60 degrees). During honing, the drum 120 is rotated at a high speed (for example, 1000 rpm) in the direction indicated by arrow X in the figure by the rotation of the drum rotation motor 161. On the other hand, the semiconductor wafer 10 adsorbed by the holding table 131 is inclined at a predetermined angle β 2 with respect to the honing surface 122A, and the arm portion is ________Li__ t, and the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love) (Please read the notes on the back before filling this page) Order --------- line! I el nnn ϋ nn ϋ n ϋ n ϋ ϋ ϋ n ϋ ϋ I ϋ. 559582 A7 _____B7 _ V. Description of the invention (丨)) 135, in this state, the motor 132 (Figure 1) for table rotation is used, along the figure Rotate at a low speed (0.5 ~ 2rPm) in the direction shown by the arrow Y in 2. In this way, the semiconductor wafer 10 after the arm is rotated is moved by the pressing cylinder 170 in the direction of the arrow Z in the figure, and the edge portion 11 of the semiconductor wafer 10 is brought into contact with the honing surface 122A at a predetermined angle 02 to perform the edge Honed. In addition, the tilting table 130 moves the holding table 131 up and down to move the contact portion between the edge portion 11 and the honing surface 122A, so that honing using the entire honing member 122 can be performed. As shown in FIG. 3, by honing the honing surface 122A with respect to the rotation axis 120R at a predetermined inclination angle 1, the mud-like honing fluid adhering to the honing surface 122A is transmitted through the centrifugal force F1 and from the honing surface 122A. The resistance F2 is the combined force F3 of the two to guide it along the honing surface 122A. As a result, the mud-like honing liquid can be efficiently recovered to the honing liquid recovery barrel 150. Here, the edge honing of the semiconductor wafer 10 will be described with reference to FIGS. 4 and 5. In this embodiment, the three surfaces (lower slope 11B, middle 11C, and upper slope 11A) of the edge portion 11 of the semiconductor wafer 10 are aligned by the honing apparatus 100. Here, the upper inclined surface 11 A and the lower inclined surface 11 B are edge-honed so that their angles (angles relative to the surface of the semiconductor wafer 10) ^ a form a predetermined angle. The edges of the semiconductor wafer 10 are honing. First, as shown in FIG. 5 (a), the back surface 10B side of the semiconductor wafer 10 is adsorbed by the holding table 131 (the element formation surface is on the top), and the holding table 131 rotates at a low speed. The size of L _, _ sheet with side, high speed rotation applies to China National Standard (CNS) A4 specification (210 X 297 public love) '---- (Please read the precautions on the back before filling this page) I --- I 1 --- Order --------- I · A7 559582 ___B7 _ 5. Description of the invention (#) The honing surface 122A is in contact. In this case, the angle 0 2 with respect to the honing surface 122A of the semiconductor wafer 10 is set so that the angle Θ a of the upper inclined surface 11 A forms a desired angle. For example, when the angle Θ a is 22 degrees, the angle 0 2 is 22 degrees, and when the angle 0 a is 37 degrees, the angle θ 2 is 37 degrees. When the honing of the upper inclined surface 11A is completed ', the honing of the middle surface 11C is next. This honing is performed by forming the angle θ2 between the semiconductor wafer 10 and the honing surface 122A to be approximately 90 degrees. When the honing of the middle surface 11C is completed, the semiconductor wafer 10 is turned over, and the element formation surface 10A is attracted to the holding table 131. In this case, the angle 0 2 with respect to the honing surface 122A of the semiconductor wafer 10 is set so that the angle 0 b of the upper inclined surface 11 B forms the above-mentioned angle. In this case as well, when the angle 0b is 22 degrees, the angle 02 is 22 degrees, and when the angle 6> b is 37 degrees, the angle 02 is 37 degrees. Next, the inclination angle 0 1 with respect to the rotation axis 120R of the honing surface 122A will be described with reference to FIG. 6. As described above, during edge honing, the semiconductor wafer 10 must be formed at a predetermined angle of 0 2 with respect to the honing surface 122A so that the upper inclined surface 11 A and the lower inclined surface IIB form a predetermined angle (the angle 0a is 22 degrees). When the angle 02 is 22 degrees, and the angle 0a is 37 degrees, the angle 02 is 37 degrees). On the other hand, although the inner diameter of the drum 12 of the honing apparatus 100 is set to sufficiently accommodate the semiconductor wafer 10 inside the honing member 122, the overall size of the honing apparatus 100 is reduced. The smaller the better. As described above, when performing edge honing, the semiconductor wafer 10 must be formed at a predetermined angle with respect to the honing surface 122A (for example, $ 2 = 22 degrees). _______ 1 ^ .____ This paper size is applicable to China National Standard (CNS) A4 (210 x 297 mm) --------------------- (Please read the notes on the back first (Fill in this page again.)-Line. A7 559582 _____ ^ ____ 5. Description of the Invention (Κ) Here, as shown in Fig. 6 (a), considering the inclination angle of the rotation axis 120R with respect to the honing surface 122A is 0 1 Smaller (sloping) cases. When the honing surface is used to hob the upper or lower inclined surface at a predetermined angle of 0 2, the semiconductor wafer 10 must be inclined at an angle of 6 »2 with respect to the honing surface 122A. Here, as the inclination angle 0 1 is smaller, the inclination angle β 1 with respect to the rotation axis 120R is smaller (inclined). At this time, when the semiconductor wafer 10 is tilted beyond a certain limit inside the substantially conical honing surface 122A, the edge portion 11 of the semiconductor wafer 10 contacts two points of the honing surface 122A (FIG. 6 (a ) 'S X symbol), less ignoring the technical purpose. In view of the above, as shown in FIG. 6 (b), the inclination angle θ 1 of the honing surface 122A is based on the diameter of the semiconductor wafer 10, and the honing position (and the edge) of the honing surface 122A in a substantially conical shape. The inner diameter of the contact portion of the portion 11), the angles θ a and 0 b of the upper inclined surface 11 A and the lower inclined surface 11B are determined, so that the semiconductor wafer 10 is gently inclined. In this embodiment, the diameter of the honing portion of the honing surface 122A (shown by the circle S in FIG. 2) is an 18-inch drum 120, which can face the upper inclined surface 11 A and the lower inclined surface 11 The edges 0a and 0b of B are honing to 22 degrees, and the inclination angle 01 of honing surface 122A is set to 60 degrees. In addition, the inclination angle 0 1 is preferably approximately 30 to 70 degrees, so that the diameter of the semiconductor wafer 10 capable of honing can be reduced, the size of the semiconductor wafer 10 can be reduced, and the upper slope 11A and the lower slope 11 B can be detected. Angles Θ a, 0 b. When the honing member 120 is provided in a substantially conical shape on the inner wall of the drum 120, for example, a honing cloth 124 having a shape as shown in FIG. 7 (a) is attached to ------- p- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page). Xin: 5J ··-丨 line · A7 559582 B7__ 5. Description of the invention ( 4 on the inner wall of the drum 120 (Fig. 7 (b)). Here, the drum 120 is rotated in the direction shown by the arrow in Fig. 7 (b) by the contact surface 124A of the honing cloth 124 in advance. At the same time, the effect of through-cutting will lead to the formation of a mist-like mud-shaped honing liquid in the drum 120; the square (honing liquid recovery barrel 150 side) is guided. Also, the open end 120B is below the honing surface 122A As shown in FIG. 8, an auxiliary plate 126 provided with a honing member 125 may be disposed on the side. The honing surface 125A of the honing member 125 is formed in the auxiliary plate 126 to form a substantially conical shape that expands upward relative to the rotation axis 120R. By setting the honing member 125 in advance, only the upper and lower moving mechanisms 133 are used to move the holding table 131 up and down in the direction of the arrow in FIG. 8 (the semiconductor wafer 10 does not need to be inverted), that is, The edge honing of the upper inclined surface 11 A and the lower inclined surface 11 B is performed. The middle surface 11C is performed while the holding table 131 is inclined, so that the semiconductor wafer 10 is perpendicular to the honing surface 122A or 125A. In this case, As shown in FIG. 9 (a), a plurality of openings 126C are provided on the outer peripheral portion 126B of the auxiliary plate 126, and the mud-shaped honing liquid is guided to the honing liquid recovery bucket 150 below it. The cross-sectional shape of the opening 126C As shown in FIG. 9 (b), when the drum 120 rotates in the direction of the arrow in the figure, the cross-sectional shape of the opening 126C wind-cuts the mud-like honing fluid in the drum 120 downward (硏The polishing liquid recovery barrel 150 side) is guided and efficiently collected. The honing surface 125A of the honing member 125 is also inclined at an angle of 4 with respect to the rotation axis 120R as shown in FIG. The mud-like honing fluid with a surface of 150A is guided by the combined force of centrifugal force and resistance to apply the Chinese National Standard (CNS) A4 specification (210 X 297S > Love 1 " " Order: -line- A7 559582 _ _B7___ —— V. Description of the invention ((7) (Please read the notes on the back first (Fill in this page again) The outer peripheral part 126B of the auxiliary plate 126. With this, the mud-like honing liquid can be efficiently recovered from the opening 126C in the honing liquid recovery barrel 150. As described above, the honing in the first embodiment Device 100, because the mud-like honing fluid supplied during edge honing does not scatter outside the drum 120 and can be recovered in the honing-liquid recovery barrel 15 ′, so the mud-like honing fluid does not The honing apparatus 100 is polluted, and the semiconductor wafer 10 is not polluted. The mud-like honing fluid can be efficiently recovered and discarded or reused. In addition, since the mud-shaped honing liquid does not scatter outside the drum 120, maintenance and inspection work of the honing device 100 can be easily performed. (Second Embodiment) Next, a honing apparatus 200 according to a second embodiment of the present invention will be described with reference to Fig. 10. In this second embodiment, the honing member 210 is composed of a first honing section 220 and a second honing section 230. Here, the first honing portion 220 and the honing surface 220A are formed in a substantially conical shape that expands downward with respect to the rotation axis 210R. In addition, the second honing portion 230 and the honing surface 230A are formed in a substantially conical shape which is enlarged toward the upper side with respect to the rotation axis 210R. The drum 210 is rotated at a high speed by a drum rotating portion 260 having the same mechanism as the drum rotating portion 160 of the first embodiment. In this honing apparatus 200, when honing the edge portion 11 of the semiconductor wafer 10 by the first honing unit 220, the mud-like honing liquid is arranged in the direction of the drum as shown by the arrow X in the figure. The honing liquid recovery barrel 250 under the wheel 210 is guided to the honing liquid recovery part 290. On the other hand, when using the second paper size to apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 559582 _ B7___ One or five, the description of the invention (β) (Please read the precautions on the back before (Fill in this page) When the grinding unit 230 hones the edge portion 11 of the semiconductor wafer 10, the mud-like honing fluid passes through the upper recovery unit 240 disposed above the drum 220 as shown by the arrow γ in the figure. Then, it is guided to the honing liquid recovery unit 290. At this time, since the inclination angles 11, 0 and 21 of the honing surfaces 220A and 230A with respect to the rotation axis 210 form a predetermined ridge (for example, 60 degrees), the mud-like honing fluid system attached to the honing surfaces 220A and 230A By the combined force of the centrifugal force and the resistance from the honing surface 220A, 230A, they are respectively guided below the honing surface 220A and above the honing surface 230A. As a result, the mud-shaped honing liquid can be efficiently recovered in the honing liquid recovery unit 290 through the upper recovery unit 240 and the honing liquid recovery bucket 250. The other configurations of the honing unit 200 of the honing apparatus 200 are the same as those of the honing apparatus 100 of the first embodiment, and detailed descriptions thereof are omitted. _ 线 _ The honing device 200 of the second embodiment does not scatter outside the drum 210 due to the mud-like honing liquid supplied during edge honing, and can be recovered in the honing liquid. The recovery unit 290 prevents the mud-shaped honing liquid from contaminating the honing device 200 and the semiconductor wafer. The mud-shaped honing liquid can be efficiently recovered, discarded, and reused. In addition, since the mud-like honing liquid does not scatter to the outside of the drum 210, maintenance and inspection operations of the honing device 200 can be easily performed. In the first and second embodiments described above, although the honing apparatuses 100 and 200 for honing the edge portion 11 of the semiconductor wafer 10 have been described, the present invention is naturally applicable to optical lenses and magnetic disks. Honing of edge portions of circular substrates such as substrates. (Third embodiment) This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 559582 a7 ______B7 ____ V. Description of the invention 0?) Figure 11 shows a cross section of a honing device 300 according to this embodiment. Illustration. As shown in the figure, the honing device 300 includes a first drum (first honing section) 310, a second drum (second honing section) 320, a holding seat 33, a honing liquid recovery barrel 350, and a first The first drum rotation portion 360, the second drum rotation portion 370, the first pressing cylinder 381 (contact portion), and the second pressing cylinder 382 (contact portion). The first drum 310 is rotated. It is freely mounted on the housing 302 through the bearing 311. The frame 302 is slidably attached to the linear guide 301A (a block portion 302A is formed on the work table 301). The frame 302 is rotatably supported by the first pressing cylinder 381 while moving the first drum 310 in a rotatable manner (in the direction of arrow A in FIG. 11). A first honing member 312 is provided inside the first drum 310. The first honing member 312 has a cylindrical honing surface 312A on its inner wall. A pulley 363 is provided on the outer periphery of the first drum 310, and the pulley 363 and a pulley 362 attached to the drum rotation motor 361 are suspended by a first drive belt 364. The first driving belt 364 is driven by a drum rotation motor 361, so that the first drum 310 is rotated about the axis (rotation axis 310R) of the cylindrical honing surface 312A. A holding seat (holding portion) 330 is provided inside the first drum 310. The holding base 330 includes a holding plate 331 that rotates and holds the semiconductor wafer 10 at a predetermined angle with respect to the rotation axis 310R, a stage rotation motor 332, and a lifting drive mechanism 334. Here, when the first pressing cylinder 381 is used to make the 1st drum size applicable to the Chinese national standard (CNS> A4 specification (210 X 29 ^ 1 public love 1 '(Please read the precautions on the back before filling in this (Page) Order. · Line · A7 559582 ______B7 ____ 5. Description of the invention (/) (Please read the precautions on the back before filling in this page) 310 When moving along the left side of the frame 302, tilt the side at a predetermined angle The edge portion 11 (upper inclined surface 11A) of the rotating semiconductor wafer 10 is pressed against the honing surface 312A with a certain force. Further, a collar portion 325 is provided on the upper portion of the first drum 310, and the first portion covers the second portion from the lower side. 2 The entire open end 320B below the drum 320. The collar portion 325 is used to guide the portion of the mud-like honing liquid that is scattered by the nozzles 383 and 384 supplied to the semiconductor wafer 10 to the first drum Inside 310, a drum side edge 326 is provided below the first drum 310. The drum side edge 326 is used to guide the mud-shaped honing liquid supplied to the semiconductor wafer 10 to the honing liquid Recovery barrel 350. On the other hand, the second drum 320 is rotatably mounted on the housing 303 via a bearing 321. · The frame 303 is also slidably mounted on the linear guide 301B formed on the work table 3101 (the square portion 303A is formed). The frame 303 is rotated by the second pressing cylinder The second drum 320 is supported on the ground while moving relative to the work table 301 (in the direction of arrow B in FIG. 11). A second honing member 322 is provided inside the second drum 320. The second honing member 322 is provided there The inner wall has a cylindrical honing surface 322A. A pulley 373 is provided on the outer periphery of the second drum 320, and the pulley 373 and a pulley 372 mounted on the drum rotation motor 371 side are suspended by a second drive belt 374 The second driving belt 374 is driven by the drum rotation motor 371, so that the second drum 320 is rotated about the axis of the cylindrical honing surface 322A (rotation axis 320R). Also, the second drum The wheel 320 is configured eccentrically (refer to Fig. 11 and Fig. 12), so that its rotating shaft 320R and the first drum are —— _____. 22 ----- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) A7 559582 ____ B7 ___ 15. The description of the invention (W) The rotation axis 310R of the wheel 310 is offset. The second drum 320 is formed to be compatible with the The relative position of the edge portion 11 of the semiconductor wafer 10 held by the holding plate 331 of the holder 330 in contact with the holder 330 determines the relative position with respect to the first drum 310. The aforementioned second pressing cylinder 382 should be the second drum When 320 moves in the right direction of each frame 303, the other side (lower side slope 11B) of the edge portion 11 of the semiconductor wafer 10 rotated at a predetermined angle and tilted at a predetermined angle is pressed against 硏 with a certain force. Polished surface 312A. The honing liquid recovery bucket 350 covering the open end 310B of the lower portion of the first drum 310 is disposed so as not to contact the first drum 310 rotating at a high speed. A drain pipe 351 constituting a honing liquid recovery unit is provided at the bottom. In addition, the honing apparatus 300 is provided with nozzles 383 and 384 for supplying a mud-like honing liquid to the edge portion 11 of the semiconductor wafer 10 during edge honing. Further, the open end 320A of the upper part of the second drum 320 is covered with the upper cover 385, so that the mud-like honing liquid is prevented from being scattered to the outside. Next, the positional relationship between the first drum 310 and the second drum 320 of the honing apparatus 300 and the semiconductor wafer 10 adsorbed by the holding plate 331 of the holding base 330 will be described with reference to FIG. Before the edge honing process is started, the honing surfaces 312A and 322A provided in each of the first drum 31 and the second drum 320 are eccentrically disposed so as to be offset from the edge portion 11 of the semiconductor wafer 10 ( 11A, 11B) can be contacted and not contacted. At this time, the semiconductor wafer 10 is inclined on the holding plate 331 of the holding base 330 at a predetermined angle θ 1 with respect to the rotation axis 310R (Fig. 11). This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 public love) (Please read the precautions on the back before filling this page) -2Γ--0 · -line- 559582 A7 ------- B7__ 5. Description of the invention (A) (Please read the precautions on the back before filling in this page) When honing the edge portion 11 of the semiconductor wafer 10 'First', the semiconductor wafer is rotated by a stage motor 332 10 Rotate at a low speed (about 0.5 to 2 rpm) in the direction indicated by the arrow X in FIG. 12. On the other hand, the first drum 310 is rotated at a high speed (approximately 100 rpm) by the drum rotation motor 361 in the direction shown by the arrow γ in FIG. 12, and the second drum 320 ′ is rotated by the drum The motor 371 is rotated at a high speed in the direction shown by the arrow Z in FIG. 12 (about 1000 rpm). The first drum 310 and the second drum 320 which are rotated at a high speed are moved by the first pressing cylinder 381 and the second pressing cylinder 382 in directions indicated by arrows A and B, respectively. With this movement, the honing surfaces 312A, 322A are pressed against the edge portion 11 of the semiconductor wafer 10 rotating at a low speed with a certain force, and the upper side inclined surface 11A and the lower side inclined surface 11B of the edge portion 11 are honed at substantially the same time In FIG. 12, parts SI and S2 indicated by zeros in the dashed line). The holding plate 311 can be moved up and down by the elevating driving mechanism 334, so that the contact portion between the edge portion 11 and the honing members 312 and 322 can be moved, and honing using the entire honing members 312 and 322 can be performed. In this embodiment, with the honing device 300, the angles 0a, Θ13 of the upper slope 11A and the lower slope 11B of the semiconductor wafer 10 form a predetermined angle (FIG. 4, for example, 0a = 0b, 22 degrees, or 37). degree). Here, the diameters of the upper inclined surface 11A and the lower inclined surface 11B of the honing device 300 are such that the edge portion 11 of the semiconductor wafer 10 inclined at an angle (9 1) does not make two points of contact on each of the honing surfaces 312A and 322A. Decide on its size. In order to miniaturize the honing device 300 as a whole, the smaller the range that satisfies this condition, the better. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 559582 ___ B7 V. Invention Explanation (/) (Please read the precautions on the back before filling in this page) As mentioned above, since the honing device 300 of the third embodiment is provided with the first drum 310 for honing the upper inclined surface 11A, And the second drum 320 for honing the lower bevel 11B on the edge, therefore, the honing of the upper bevel 11A and the lower bevel 11B can be performed at substantially the same time, so that the edge honing processing time of the semiconductor wafer 10 can be shortened. If the inclination angle (1) of the holder 330 of the semiconductor wafer 10 is set to be the same as the angles 0a and 0b of the upper inclined surface 11A and the lower inclined surface 11B, although 45 degrees is the best, it can also depend on the angle 0. a, 6 »b and change the angle appropriately. The honing of the edge of the upper inclined surface 11A and the edge of the lower inclined surface 11B are performed at separate times. In this case, since the honing of the upper inclined surface 11A and the lower inclined surface 11B can save the semiconductor wafer 10. After the flip The re-adsorption process can shorten the edge honing processing time of the semiconductor wafer 10. (Fourth Embodiment) Next, the honing apparatus 400 according to the fourth embodiment of the present invention will be described with reference to Figs. 13 to 17. Fig. 13 is a diagram showing the entire honing apparatus 400 according to this embodiment. 'FIG. 14 is a perspective view showing the positional relationship between the first and second drums 410 and 420 and the curvature radius adjusting unit 460. As shown in these figures, the honing The device 400 includes a first drum 410, a second drum 420, a first holding base 430, a second holding base 440, a honing belt 450, and belt adjusting portions (come-shaped members) 461 and 462. Among them, the first drum Wheel ------ 2 ^ ------------- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) A7 559582 p —- ~ _MI __-- 15. Description of the invention (~) 410. Suspension honing belt 450 of the second drum 420. The first drum 410 is provided on the lower side of the base 47. The driving motor 411 rotates at a high speed (about 1000 rpm), thereby driving the honing belt 450. The driving motor 411 and the first drum 410 constitute a driving unit 'at this time', the second drum 420 rotates in series. The mobile steam red 42 丨 is mounted on the mounting portion 422 of the second drum 420. The second cylinder 420 is moved along the oval opening (not shown) by the moving cylinder 421, and the belt 450 is honed. Tension adjustment. When the honing belt 450 is replaced, the distance between the first drum 410 and the second drum 42 can be shortened by using the moving cylinder 421 to make the operation easier. A honing member 452 made of a honing cloth is attached to the honing belt 450. When the first drum 410 is rotated to drive the honing belt 450, the honing member 452 moves between the first drum 410 and the second drum 420. at a constant speed. At this time, the portion between the first drum 410 and the second drum 420 (shown by diagonal lines in FIG. 14) is used as the honing surface (the first honing surface 452A, the second honing surface 452B). The first holding base 430 and the second holding base 44 are respectively provided with holding plates 431 and 441, table rotation motors 432 and 442, and the like, and hold semiconductor wafers 10 and 20 while rotating. In addition, moving devices (not shown) are provided on the working tables 401 and 402 mounted on the first holding base 430 and the second holding base 440 so that the holding plates 431 and 441 move in the directions shown by arrows in FIG. 13 and The honing belt 45 contacts. __24 _----This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------- ».! (Please read the precautions on the back before reading (Fill in this page) 5J · -Line 559582 A7 ______B7 _ V. Description of the invention (0) When the first holding base 430 and the second holding base 440 are moved toward the honing belt 450 by the moving device, the angle is a predetermined angle 2 The edge portions 11 and 21 of the inclined and low-speed semiconductor wafers 10 and 20 (the example shown in the figure is the upper side inclined surface 11A when the edge portion 11) is pressed against the first honing surface 452A, the first 2 Honed surface 452B. The angle 0 2 is determined by the angles 0 a and 0 b of the edge portions 11 and 21 (see FIG. 4). As shown in FIGS. 13 to 17, the honing belt 450 is provided with a constant Compressed members (belt adjustment sections) 461 and 462 of the upper and lower ends 450C of the belt are pressed by the force of the belt. The honed belt 450 is pressed against the inner side of the honing belt 450 by the comers 461 and 462. It is adjusted to a predetermined radius of curvature. The comet members 461 and 462 are smoothly processed at least with curved surfaces 461A and 462A, so it is difficult to cause friction with the honing belt 450 The curvature radius rl (Fig. 16) of the curved surfaces 461A and 462A is determined by the curvature radius of the first honing surface 452A and the second honing surface 452B of the honing belt 450. Therefore, its curvature depends on The diameters of the semiconductor wafers 10 and 20 honed by the first honing surface 452A and the second honing surface 452B, the angle 6 of the upper inclined surface 11A> a, the angle 6 of the lower inclined surface »b (Fig. 4), etc. In addition, the curvature radii rl of the comet members 461 and 462 may be the same or different. The honing device 400 constructed in this manner is covered by the cover 485 to cover the first drum 410, the second drum 420, and the first drum 410. 1 holder 430, 2 holder 440, and nozzles 483 and 484 provided on the top thereof supply mud-like honing liquid to the contact portions of the semiconductor wafers 10 and 20 and the honing belt 450, which are semi-conductive ______23 -This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) 线 -line · A7 559582 _____B7 _____ V. Description of the invention The mud-like honing liquid supplied from the body wafer 10 is prevented from flying outside by the upper cover 485, and is provided from the base 470 The drain pipe 471 is recovered. In this embodiment, the honing device 400 'is suspended from the honing belt 450' of the first drum 410 and the second drum 420, and can be attached to each of the holding plates 431 and 441. The edge portions 11 and 21 of the two semiconductor wafers 10 and 20 are honed. By using such a honing belt 450, since the contact area between the edge portion 11 of the semiconductor wafer 10 and the honing surfaces 452A, 452B can be enlarged, the processing time of edge honing can be shortened. In this honing device 400, the semiconductor wafers 10 and 20 are also rotated at a low speed (about 1 to 2 rpm) in the direction indicated by the arrow X in FIG. 13. On the other hand, the honing belt 450 is driven by a motor 411 along the High speed rotation in the direction indicated by arrow Y (the rotation speed of the second drum 420 is about 1,000 rpm). In this state, when the first holder 430 and the second holder 440 move along the guide grooves 403 and 404 in the directions shown by the arrows, the edge portions 11 and 21 of the semiconductor wafers 10 and 20 are formed by A certain force is applied to the honing surfaces 452A and 452B of the honing belt 450 to perform edge honing. In addition, the holding plates 431 and 441 are moved up and down by a lifting drive mechanism (not shown) to move the contact portions of the edge portions 11 and 21 and the honing surfaces 452A and 452B, and honing using the entire honing member 452 can be performed. . In the above embodiment, although the curved surfaces 461A and 462A of the comate members 461 and 462 can be smoothly processed and the honing belt 450 can be slid smoothly, as shown in FIG. 463A is provided with a roller 464, so that the honing belt 450 can be slid well. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ·. 丨 Line A7 559582 _______B7____ V. Description of Invention (^ 7) (please first (Please read the notes on the back and fill in this page again.) In the honing device 400 of the fourth embodiment described above, the edges of the semiconductor wafers 10 and 20 are honed by the honing belt 450 which can freely adjust the radius of curvature. Since the portions 11 and 21 can increase the contact area between the edge honing of the semiconductor wafer 10 and the honing surfaces 452A and 452B, the processing time of edge honing can be shortened. In addition, since the radius of curvature of the honing surfaces 452A and 452B can be adjusted freely, the semiconductor wafers 10 and 20 of any diameter can be honing the edge portions 11 and 21. When the angle of the edge is changed, the length of the contact portion changes. Therefore, at each edge angle, by preparing a coma-shaped member that can obtain the optimal contact portion length, it is possible to efficiently hob any edge angle. Furthermore, since the curved surfaces of the coma members 461 and 462 can be made different from each other, even semiconductor wafers 10 and 20 having different diameters can be edge-honed at the same time. In the first to fourth embodiments, although the honing apparatuses 100, 200, 300, and 400 for honing the edge portion 11 of the semiconductor wafer 10 have been described, the present invention is of course applicable to optical lenses, Honing of the edge of a circular substrate such as a magnetic disk substrate. (Fifth Embodiment) Next, a fifth embodiment of the present invention will be described with reference to Figs. In this fifth embodiment, in the manufacturing process of the semiconductor device, any one of the honing apparatuses 100, 200, 300, and 400 of the above-mentioned first to fourth embodiments is used to clean and remove the semiconductor wafer 10 Substance of the edge part 11. Here, FIG. 18 shows a semiconductor manufacturing apparatus 500 for performing a desired processing on the element formation surface 10A of the semiconductor wafer 10 (for example, __ _ _9Q____ This paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 559582 ____B7 V. Description of the Invention (Conclusion) After the formation of the aluminum layer, the implantation of impurities, etc.), the unnecessary substances remaining on the semiconductor wafer 10 are removed. In this semiconductor manufacturing apparatus 500, the honing of the edges of the edge portion 11 of the semiconductor wafer 10, the CMP honing of the element forming surface 10A of the semiconductor wafer 10, and the cleaning of the semiconductor wafer 10 are continuously performed. That is, in this semiconductor manufacturing apparatus 500, an edge honing unit (first honing unit) 510 for honing the edge portion 11 of the semiconductor wafer 10, and a device for carrying out the semiconductor wafer 10 The CMP honing unit (second honing unit) 520 for honing the forming surface 10A is continuously arranged. With this, the edge honing of the edge portion 11 of the semiconductor wafer 10 and the element formation surface of the semiconductor wafer 10 can be performed continuously (without the need to insert other processing and minimize the transport distance of the semiconductor wafer 10). 10A CMP Honing. In this embodiment, a CMP honing unit 520 is disposed on the downstream side of the edge honing unit 510 according to the actual honing process flow (sequence) of the semiconductor wafer 10.

Further, on the upstream side of the edge honing unit 510 and the downstream side of the CMP honing unit 520, a buffer station 530 is provided to communicate with them. The buffer station 530 is provided with a post-washing unit (washing room) 540. This post-cleaning unit 540 is composed of an edge-part post-cleaning chamber 540A and a CMP post-cleaning chamber 540B. In the semiconductor manufacturing apparatus 500 thus constructed, first, the semiconductor wafer 10 housed in a front-end cassette (not shown) of the semiconductor manufacturing apparatus 500 is temporarily placed in a buffer station by a transport robot (not shown). 530. Then, it is taken into the edge honing unit 510 by a transport robot. (Please read the precautions on the back before filling this page) Xin on 0 ·; line · This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) A7 559582 ____________ B7 ____ 5. Description of the invention (θ ) (Please read the precautions on the back before filling in this page.) In this edge honing unit 510, the edge part 11 of the semiconductor wafer 10 taken in uses the honing device described in the first to fourth embodiments. 100, 200, 300, 400 for edge honing. When the edge honing of the edge honing unit 510 is completed, the semiconductor wafer 10 is transported to the edge portion of the rear washing unit 540 by the transfer robot to the rear washing chamber 540A. The rinsing room 540A is cleaned after the rim portion to remove mud-like honing liquid and unnecessary substances (metals, etc.) adhering to the rim portion 11. After this cleaning, treatments such as wiping cleaning, megasonic cleaning, and ultrasonic cleaning can be performed. Next, the semiconductor wafer 10 is transported to a post-CMP cleaning chamber 540B, and then the element formation surface 10A is subjected to a cleaning process (wipe cleaning, megasonic cleaning, etc.), and then a drying process (rotary drying, etc.) ). The cleaned semiconductor wafer 10 is transported to the front end again by a transport robot and is stored in a cassette. In this way, in the semiconductor device manufacturing process, honing of the edge portion 11 of the semiconductor wafer 10 and honing of the element formation surface 10A are performed by using the semiconductor manufacturing apparatus 500, and then post-cleaning is performed, even if high density is desired. The manufacture of semiconductor elements can also effectively remove unnecessary substances attached to the semiconductor wafer 10. Furthermore, particles such as fine holes and heavy metals adhering to the surface of the edge portion and unnecessary materials such as heavy metals are removed together with the unevenness on the surface of the edge portion to form a smooth surface. The fine holes on the surface, so-called grooves and recesses, do not Particles, heavy metals, and other unwanted substances can be adhered, and can be carried out in the post-washing step. _____ 34 --- This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) A7 559582 _ B7 ____-_ 5 2. Description of the invention (M) (Please read the precautions on the back before filling this page) High-quality cleaning. Since high-quality washing can be performed, the influence of substances attached to and remaining on this part on the formation of components in subsequent processes can be effectively reduced. As a result, the manufacturing yield of the semiconductor device can be improved. In addition, by integrating the edge honing unit and the CMP honing unit, the waste liquid of the mud-shaped honing liquid used in the CMP honing can be used for edge honing, so the mud-shaped honing liquid can be effectively utilized. Next, the flow chart of the semiconductor device manufacturing process shown in FIG. 19 will be used to explain the manufacturing of a semiconductor device by suitably performing honing of the element formation surface 10A and honing of the edge portion 11 by the semiconductor manufacturing apparatus 500. order. When manufacturing a semiconductor device, first, in step S200, from the oxidation step (step S201), the CVD step (step S202), the electrode film formation step (step S203), and the ion implantation step (step S204), the next step to be processed is selected. . Next, any one of steps S201 to 204 is performed according to the selection. In step S201, an element formation surface 10A of the semiconductor wafer 10 is oxidized to form an oxide film. In step S202, an insulating film or the like is formed on the element formation surface 10A by a CVD method or the like. In step S203, metal is vapor-deposited on the element formation. An electrode film or the like is formed on the surface 10A, and impurities are implanted in the element formation surface 10A in step S204. When the CVD step (step S202) or the electrode film formation step (step S203) ends, then step S205 is performed to determine whether a honing step (edge honing, CMP honing) is to be performed. When it is judged that the honing step is to be performed, then step S206 is performed for the flattened objects such as oxide films and other insulating films, or by means of semiconductor elements -------- 32 —__— This paper standard applies to China National Standard (CNS) A4 Specification (210 X 297 mm) A7 559582 __B7 _____ ^ __ V. Description of the Invention () Damascene Process (Damascene Process) wiring layer formation (surface metal film honing) object The element formation surface 10A ′ is continuously subjected to edge honing and CMP honing by the semiconductor manufacturing apparatus 500 described above, and thereafter, step S207 is performed. On the other hand, when it is determined that the honing step is not to be performed, step S206 is skipped and step S207 is performed. A photolithography step is performed in step S207. In this photolithography step, the ten-series photoresist coating on the semiconductor wafer, firing of a fixed pattern using an exposure device, and development of the photoresist after exposure are performed. In the next step S208, the metal film of the semiconductor wafer etc. uses the developed photoresist, and parts other than the photoresist are removed by etching. After that, the photoresist film is stripped. When the processing of step S208 is completed ', it is judged at step S209 as to whether the desired processing of the semiconductor wafer is completely completed. When the judgment result of this step S209 is "No", it returns to step S200 and repeats the above-mentioned series of processes (the circuit pattern is formed on the semiconductor wafer). When the judgment result of step S209 is "YES", the routine is ended. [Industrial Applicability] The honing apparatus and honing method of the present invention can be used for honing a wafer, for example, in a semiconductor device manufacturing process. In addition, the method and device for manufacturing the semiconductor element of the present invention can of course be used to manufacture semiconductor elements. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out This page) A 0 |, · -line-A7 559582 V. Description of the invention (A) [Symbol description] (Please read the precautions on the back before filling this page) 10, 20 Semiconductor wafer 10A Element formation surface 11 Edge Section 11A Upper inclined surface 11B Lower inclined surface 11C Middle surface 50 Honing device 51 Drum 51R Rotating shaft 52 Honing member 52A Honing surface 53 Cover 53A Window 54 Nozzle 55 Motor 56 Tilt table 57 Holding table 58 Upper cover 100, 200 , 300, 400 Honing device 101 Workbench 102, 302 Frame 120 Drum (rotating part) 120A Upper open end This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) A7 559582 _B7_ V. Description of the invention (";") 120B Open end on the lower side (please read the precautions on the back before filling this page) 120R, 210R, 310R, 320R Rotary shaft 121, 311, 321 Bearing 122, 312, 322 Honing member 122A, 125A, 220A, 230A, 312A, 322A Honing surface 123 Zigzag shaft 124 Honing cloth 124A Laminating surface. 125, 210 Honing member 126 Auxiliary plate (drum edge) 126B Outer periphery 126C Opening 130 Tilt table 131 Holding table 132 rotating motors 133 Angle adjustment section (up and down mechanism) 134 Up and down adjustment section 135 Arm section 140 Top cover 150, 250, 350 Honing liquid recovery bucket (honing liquid recovery section) 160, 260 Drum rotating section 161, 361, 371 Motors for rotating drums 162, 163, 362, 363, 373 Pulleys 164 Drive belt This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) A7 559582 V. Description of the invention (0 ) 170 Cylinder for pressing (moving part) (Please read the precautions on the back before filling this page) 181 Honing fluid supply pipe 182, 383, 384 Nozzle 191, 351 Drain pipe 192 Suction pipe 220 First honing Section 230 Second honing section 240 Upper recovery section 301 Workbench 301A Linear guide 302A, 303A Block section 310 First drum (first honing section) 310B Lower open end 312 First honing member 320 Second drum (Second Honing Section) 320A Upper Open End 322 The second honing member 325 the collar 326 the side edge of the drum 330 the holding seat (holding portion) 331 the holding plate 332 the rotation motor 334 the lifting drive mechanism 360 the first drum rotating portion This paper standard applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) A7 559582 V. Description of the invention (364) 1st drive belt (please read the precautions on the back before filling this page) 370 2nd drum rotation part 374 2nd drive belt 381 1st pressure Cylinder (contact part) 382 2nd cylinder (contact part) for pressing 385 Top cover 401, 402 Workbench 403, 404 Guide groove 410 First drum 411 Driving motor 420 Second drum 430 First holding seat 431, 441 holding plate 440 second holding seat 450 honing belt 452 honing member 452A first honing surface 452B second honing surface 460 curvature radius adjusting portion 461, 462 comet member (belt adjusting portion) 461A, 462A curved surface 464 Roller 470 Base 471 Drain pipe This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) A7 559582 _B7_ V. Description of the invention (M) 485 Cover (Please read the precautions on the back before filling (This page) Manufacturing equipment 510 Edge honing unit (first honing unit) 520 CMP honing unit (second honing unit) 530 Buffering station 540 Rear cleaning unit (washing room) 540Α Edge rear washing room 540Β After CMP Clean room paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

559582 SI VI. Application for patent scope 1. A honing device, which is characterized in that: a honing member has a substantially conical honing surface on the inner surface; and a rotating part can make the honing member along the substantially conical shape. The axis of the honing surface rotates around; the holding portion is used to hold the substrate while rotating; and the moving portion 'moves the holding portion so that the edge portion of the substrate contacts the honing surface at a predetermined angle. 2. For the honing device of the first scope of the patent application, wherein the honing member is composed of a first honing section and a second honing section, and the honing surface of the first honing section is along the aforementioned The rotating portion has a generally conical shape that expands downward; the honing surface of the second honing portion has a substantially conical shape that extends upward in the axial direction of the rotating portion; the moving portion moves the holding portion, The edge portion of the substrate is selectively brought into contact with the honing surface of the first honing portion and the honing surface of the second honing portion. 3. The honing device according to item 1 or 2 of the scope of patent application, wherein a honing liquid supply unit is provided to supply the honing liquid to the aforementioned honing member; and the honing liquid recovery unit covers the aforementioned substantially conical shape from below. Space. 4. The honing device according to item 1 or 2 of the scope of patent application, wherein the honing surface of the honing member is arranged at least in a portion in contact with the substrate, and is inclined by 30 to 70 with respect to the rotation axis of the rotating part degree. 5. A kind of honing device, which is the edge portion of the honing substrate, which is characterized in that: the first honing portion has a first honing surface for honing the inclined surface on the upper side of the edge portion; the second honing portion Has a second honing surface for honing the inclined surface below the edge portion; and a contact portion for contacting the upper surface of the edge portion of the edge portion of the substrate with the first honing surface at a predetermined angle, and The angle makes the lower inclined surface contact the second honing surface. ^ _____ 1____ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) 559582 D8 6. Scope of patent application (please read the notes on the back before writing this page) 6. If the honing device of the scope of patent application item 5, the first honing part has the first honing member ( The first honing surface having a substantially cylindrical shape on the inner surface) can be rotated around the axis of the first cylindrical honing surface having the substantially cylindrical shape; the second honing portion has a second honing member (in the The inner surface has a substantially cylindrical second honing surface that is eccentrically positioned with respect to the aforementioned axis) and is rotatable around the axis of the aforementioned substantially cylindrical second honing surface; and has a holding portion for Hold the substrate while rotating. 7 · A kind of honing device, which is characterized in that: a honing belt is formed with one or more honing surfaces; a driving part drives the honing belt; and a belt adjusting part can correspondingly perform honing The radius of the substrate is used to adjust the radius of curvature of the honing direction. Line 8: The honing device according to item 7 of the scope of patent application, wherein at least the first honing surface and the second honing surface are formed on the aforementioned honing belt; and the belt has a belt adjustment part, which can correspond to the radius of the substrate for honing The curvature radius of at least one of the first and second honing surfaces is adjusted. 9. A honing method, characterized in that a first honing portion (having a first cylindrical honing surface having a substantially cylindrical shape and honing an inclined surface above an edge portion of a substrate) is wound around the substantially cylindrical shape. A step of rotating the axis of the first honing surface around the axis of the second honing portion (having a second cylindrical honing surface having a substantially cylindrical shape and honing the inclined surface below the edge portion); A step of rotating the axis of the second honing surface around the axis; and making the inclined surface on the upper side of the edge portion of the substrate and the first honing surface, and the inclined surface on the lower side of the edge portion and the second honing surface, selectively or simultaneously Steps of contact. 10 · —A kind of honing method for semiconductor wafers, which features: edge ___________ 2 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) " '"' 559582 ___ ^ _ 6. The scope of patent application: the step of rotating the semiconductor wafer while holding it; and contacting the edge portion of the semiconductor wafer with the honing member at a predetermined angle (the inner surface has a generally conical honing surface, and surrounds the foregoing roughly The conical honing surface rotates around the axis) of the aforementioned honing surface. 11. A method for manufacturing a semiconductor device, comprising the steps of continuously honing an edge portion of a semiconductor wafer and performing CMP honing on an element formation surface. 12. A method for manufacturing a semiconductor device, characterized in that: a honing method for a semiconductor wafer is carried out by using a honing method for a semiconductor wafer according to item 10 of the patent application, and CMP is performed on a component forming surface of the semiconductor wafer Honed. 13. A method for manufacturing a semiconductor device, comprising: continuously performing CMP honing on the element forming surface of a semiconductor wafer; and honing the edges by a honing method according to item 9 of the patent application scope. 14. A semiconductor device manufacturing device, characterized in that: a first honing unit is used for honing the edge portion of a semiconductor wafer; a second honing unit is used for honing the element formation surface of the semiconductor wafer; And cleaning chamber 'The semiconductor wafers that have been honed by the second honing unit are cleaned. 3 Use Chinese National Standard (CNS) A4 specifications (210 X 297 male IT (Please read the precautions on the back before writing this page)