JP4734467B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4734467B2 JP4734467B2 JP2010201169A JP2010201169A JP4734467B2 JP 4734467 B2 JP4734467 B2 JP 4734467B2 JP 2010201169 A JP2010201169 A JP 2010201169A JP 2010201169 A JP2010201169 A JP 2010201169A JP 4734467 B2 JP4734467 B2 JP 4734467B2
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- film
- metal film
- insulating film
- barrier metal
- wiring
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- 239000004065 semiconductor Substances 0.000 title claims description 142
- 238000004519 manufacturing process Methods 0.000 title claims description 132
- 229910052751 metal Inorganic materials 0.000 claims description 197
- 239000002184 metal Substances 0.000 claims description 197
- 238000000034 method Methods 0.000 claims description 183
- 239000000758 substrate Substances 0.000 claims description 141
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- 238000010438 heat treatment Methods 0.000 claims description 79
- 229910052760 oxygen Inorganic materials 0.000 claims description 46
- 239000001301 oxygen Substances 0.000 claims description 45
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 43
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- 238000007254 oxidation reaction Methods 0.000 description 47
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 43
- 239000010410 layer Substances 0.000 description 43
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 42
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- 229910052715 tantalum Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
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- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
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- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910003077 Ti−O Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
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- 229910052731 fluorine Inorganic materials 0.000 description 2
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- 239000007788 liquid Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- 239000007790 solid phase Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910018173 Al—Al Inorganic materials 0.000 description 1
- 229910018516 Al—O Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- SHEGNBCAYSUQEV-UHFFFAOYSA-N [Cu+].CC(C)=C(C)[SiH3] Chemical compound [Cu+].CC(C)=C(C)[SiH3] SHEGNBCAYSUQEV-UHFFFAOYSA-N 0.000 description 1
- JWNBYUSSORDWOT-UHFFFAOYSA-N [Kr]Cl Chemical compound [Kr]Cl JWNBYUSSORDWOT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 1
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- 239000011737 fluorine Substances 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 description 1
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- 150000002484 inorganic compounds Chemical group 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 229910052743 krypton Inorganic materials 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 238000002203 pretreatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
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- 238000003746 solid phase reaction Methods 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- HGCGQDMQKGRJNO-UHFFFAOYSA-N xenon monochloride Chemical compound [Xe]Cl HGCGQDMQKGRJNO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31616—Deposition of Al2O3
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
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Description
本発明の第1の実施の形態に係わる半導体装置の製造方法は、絶縁膜から放出されるガスを使用して、金属膜と絶縁膜との界面に接する金属膜の表面に酸化物を形成する方法である。
本発明の第2の実施の形態に係わる半導体装置の製造方法は、酸素を固溶する特性をもつ金属膜を、絶縁膜から放出されるガス以外で酸化する方法である。以下に、第2の実施の形態に係る半導体装置の製造方法の例を説明する。以下では、図8に示した層間絶縁膜50上に金属膜30として第2のTi膜30cを形成する場合を例にして説明する。
本発明の第3の実施の形態に係る半導体装置の製造方法は、第1の基板温度において、表面に溝、及びビアホールなどの凹部が形成された絶縁膜中、および表面の吸着ガスを放出させる工程と、第1の基板温度より低い第2の基板温度で金属膜を形成する工程と、金属膜上に配線金属膜を少なくとも凹部の一部が埋め込まれていない状態で形成する工程と、第2の基板温度より高い第3の基板温度で加熱して絶縁膜中に残存する酸化種によって、金属膜の少なくとも一部を酸化し、同時に金属膜と配線金属膜の界面で反応層を形成する工程とを含む。
本発明の第4の実施の形態に係る半導体装置の製造方法は、第1の基板温度において、表面に溝、およびビアホールなどの凹部が形成された絶縁膜中、および表面の酸化種吸着ガスを放出させる工程と、第1の基板温度より低い第2の基板温度で、原料ガスを凹部表面に付着させる工程と、凹部表面に付着されなかった残余の原料ガスを排気した後、凹部表面に光を照射して凹部表面に付着した原料ガスの分子を分解し、原料ガスの成分に含まれる金属原子からなる金属膜を、凹部表面に形成する工程とを含む。
TiCl4(気体) → Ti(固体) + 2Cl2(気体) ・・・(1)
標準生成エンタルピーΔHf°=763kJ/mol ・・・(2)
式(1)及び式(2)から、TiCl4の1分子あたりの標準生成エンタルピーは、1.27×10-15Jとなる。TiCl4分子にはTi−Cl結合が4つあるため、1つのTi−Cl結合の結合解離エネルギーは3.17×10-16Jである。Ti−Cl結合の結合解離エネルギーを得るための光の波長は、627nm以下になる。また、TiCl4分子の光吸収波長は、280nmと232nmに極大値を持つ。そのため、627nm以下、且つTiCl4分子の極大吸収波長近傍の波長の光を照射光111として用いれば、TiCl4分子を効率的に分解できる。照射光111をエキシマランプから選択する場合には、Xeエキシマ(波長:172nm)、KrClエキシマ(波長:222nm)、XeClエキシマ(波長:308nm)が選択可能である。又、185nmと254nmの波長の水銀ランプが照射光111として使用可能である。また、狭波長帯の光源の必要はなく、広波長帯の光源を用いてもよい。また、最近の低誘電率絶縁膜は、加熱、電子ビーム照射、UV光照射などによって前駆体をキュア(焼結、重合、あるいは縮合)して形成している。このような低誘電率絶縁膜にさらにUV光を照射した場合、内部の結合しているべき結合手が切れ、場合によっては誘電率の増加を招く場合がある。そのような場合、使用する絶縁膜の性質に合わせて、絶縁膜に影響を及ぼさない波長を選べばよい。特に、UV光照射によるキュア(一般的にはUVキュアと呼ばれる)はエネルギーが一定領域に限られるため、特定、かつ必要な結合手のみの解離を行うことができる。この場合、長時間UV光照射を行なっても、不必要な分解は起こらず、低誘電率絶縁膜の性質は変化しない。従って、第4の実施の形態に用いる光の波長を低誘電率絶縁膜のUVキュアの波長と合わせておけば、絶縁膜にダメージを与えることはない。
本発明の第5の実施の形態に係わる半導体装置の製造方法は、第1から第4の実施の形態で示したCu多層配線に用いられるバリアメタルとしてのTi膜の形成ではなく、メモリー素子のキャパシタンスなどに用いられる高誘電体膜である酸化アルミニウム(Al2O3)膜を形成する方法である。以下に、図27に示した半導体製造装置を用いて、基板上にAl2O3膜を形成する方法を説明する。以下では、トリメチルアルミニウム(TMA;(Al(CH3)3))を原料ガスとして用いる場合を説明する。
本発明の第6の実施の形態に係る半導体製造装置を図38(a)及び図38(b)に示す。図38(a)及び図38(b)に示す半導体製造装置は、第1〜4の実施の形態で説明した半導体装置の製造方法に適用可能である。
上記のように、本発明は第1乃至第6の実施の形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。
20…絶縁膜
30…金属膜
35…チタン酸化膜
36…タンタル膜
50…層間絶縁膜
70…第2配線層
71…第2のCuシード膜
200…凹部
Claims (2)
- 基板と、
前記基板上に配置された絶縁膜と、
前記絶縁膜上に配置されたTiを含むバリアメタル膜と、
前記絶縁膜と前記バリアメタル膜の界面に形成された前記バリアメタル膜の酸化物と、
前記バリアメタル膜上に配置されたCu配線金属膜と、
前記バリアメタル膜と前記Cu配線金属膜の界面に形成された前記バリアメタル膜と前記Cu配線金属膜との化合物と
を備え、前記バリアメタル膜の前記酸化物のX線回折測定による回折強度が、前記バリアメタル膜と前記Cu配線金属膜との前記化合物の回折強度の10倍以下であり、前記バリアメタル膜の酸素濃度が膜厚方向に徐々に変化し、前記絶縁膜側が高く前記Cu配線金属膜側が低い濃度勾配である半導体装置の製造方法であって、
第1の基板温度で、表面に凹部が形成された前記絶縁膜中及び該絶縁膜表面の酸化種を一部残存するように放出させる工程と、
前記酸化種を放出させる工程と真空連続で、前記第1の基板温度より低い、前記絶縁膜中から酸化種が放出されない第2の基板温度で、前記絶縁膜上に、前記バリアメタル膜を形成する工程と、
前記バリアメタル膜上に前記Cu配線金属膜を形成する工程と、
前記バリアメタル膜を形成後、前記絶縁膜中に残存させた酸化種によって、前記バリアメタル膜の少なくとも一部を酸化させる工程と、
前記バリアメタル膜と前記Cu配線金属膜との界面に、前記バリアメタル膜と前記Cu配線金属膜との化合物を形成する工程とを含み、
前記バリアメタル膜を酸化させる工程は、前記バリアメタル膜を前記第1の基板温度よりも高い温度で加熱する工程を含むことを特徴とする半導体装置の製造方法。 - 前記バリアメタル膜上に前記Cu配線金属膜を形成する工程は、前記バリアメタル膜上に、前記Cu配線金属膜を、少なくとも前記凹部の一部が埋め込まれていない状態になるように形成する工程を含み、
前記バリアメタル膜を前記第1の基板温度より高い温度で加熱する工程は、前記状態で基板を加熱する工程を含む
ことを特徴とする請求項1に記載の半導体装置の製造方法。
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US20060214305A1 (en) | 2006-09-28 |
US7351656B2 (en) | 2008-04-01 |
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US20120152168A1 (en) | 2012-06-21 |
JP4676015B2 (ja) | 2011-04-27 |
CN101350340A (zh) | 2009-01-21 |
CN101350340B (zh) | 2013-09-18 |
US20080090410A1 (en) | 2008-04-17 |
US20080122102A1 (en) | 2008-05-29 |
US8148274B2 (en) | 2012-04-03 |
US7994054B2 (en) | 2011-08-09 |
JP2010272898A (ja) | 2010-12-02 |
US7791202B2 (en) | 2010-09-07 |
CN100477158C (zh) | 2009-04-08 |
CN1848407A (zh) | 2006-10-18 |
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