JP5981206B2 - 半導体装置の製造方法および半導体製造装置 - Google Patents
半導体装置の製造方法および半導体製造装置 Download PDFInfo
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- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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Description
図1は、第1実施形態の半導体装置の構造を示す平面図である。図1の半導体装置は、NANDフラッシュメモリに相当する。
次に、図3〜図6を参照し、第1実施形態の半導体装置の製造方法を説明する。
まず、水蒸気を含む雰囲気中でポリシラザン膜3bを加熱する第1の熱処理を行う。第1の熱処理では例えば、ランプアニールまたはレーザーアニールが行われる。また、第1の熱処理では、ポリシラザン膜3bを例えば200〜400℃(例えば280℃または300℃)で加熱する。
次に、半導体基板1を30〜90℃の温水中に浸漬させ、ポリシラザン膜3bを温水にさらす。その結果、ポリシラザン膜3bは、水分子を含んだ状態となる。水分子は、本開示の極性分子の例である。次に、硫酸と過酸化水素を含有する薬液と、コリンと過酸化水素と水を含有する薬液とを用いてポリシラザン膜3bを処理し、ポリシラザン膜3b中の不純物を除去する。次に、ポリシラザン膜3b中に水分子が残る程度に、ポリシラザン膜3bの表面を乾燥させる。
次に、水分子を含んだ状態のポリシラザン膜3bにマイクロ波を照射することで、ポリシラザン膜3bを加熱する第2の熱処理を行う。マイクロ波は、300MHz〜3THzの周波数(100μm〜1mの波長)を有する電磁波と規定されている。第2の熱処理では例えば、10〜1000W/cm2のパワーで、5〜50SlmのN2ガスまたはO2ガスを流しながら、5.80GHzのマイクロ波を30秒〜60分間照射する。また、第2の熱処理では、ポリシラザン膜3bを例えば200〜500℃(例えば430℃)で加熱する。
次に、図7を参照し、第1実施形態のシリコン酸化膜3cのエッチングレートについて説明する。
次に、図9を参照し、第1実施形態の半導体製造装置について説明する。
最後に、第1実施形態の効果について説明する。
図11は、第2実施形態の半導体製造装置の構造を示す概略図である。
3a:素子分離溝、3b:ポリシラザン膜、3c:シリコン酸化膜、
4:第1絶縁膜、5:第1電極層、6:第2絶縁膜、7:第2電極層、
8:層間絶縁膜、9:拡散層、11:ハードマスク層、12:ハードマスク層、
13:エアギャップ、14:保護絶縁膜、
21:インタフェース部、22:ポート、23:基板移送室、
24:液体処理チャンバ、25:マイクロ波アニールチャンバ、
26:アニールチャンバ、31:半導体ウェハ、
41:半導体基板、42:素子分離絶縁膜、43:ゲート絶縁膜、
44:ゲート電極、45:側壁絶縁膜、46:ソース/ドレイン拡散層、
47:層間絶縁膜、51:ベーパライザ
Claims (7)
- 処理対象の基板の表面に凹部を形成し、
前記基板上に塗布膜を形成して、前記凹部内に前記塗布膜を埋め込み、
酸化剤を含む雰囲気中で、前記塗布膜にマイクロ波を照射せずに前記塗布膜を加熱する第1の熱処理を行い、
前記第1の熱処理後の前記塗布膜を、極性分子を含む液体または気体にさらした後にまたはさらしながら、前記塗布膜にマイクロ波を照射することで前記塗布膜を加熱する第2の熱処理を行う、
ことを含む半導体装置の製造方法。 - 前記酸化剤は水蒸気である、請求項1に記載の半導体装置の製造方法。
- 前記塗布膜はポリシラザン膜である、請求項1または2に記載の半導体装置の製造方法。
- 前記第2の熱処理では、前記塗布膜を200〜500℃で加熱する、請求項1から3のいずれか1項に記載の半導体装置の製造方法。
- 処理対象の基板をチャンバ内に移送するための基板移送室と、
前記基板移送室に連通されており、酸化剤を含む雰囲気中で、前記基板上に形成された塗布膜にマイクロ波を照射せずに前記塗布膜を加熱する第1のチャンバと、
前記基板移送室に連通されており、前記塗布膜を、極性分子を含む液体または気体にさらす第2のチャンバと、
前記基板移送室に連通されており、前記液体または前記気体にさらされた前記塗布膜にマイクロ波を照射することで、前記塗布膜を加熱する第3のチャンバと、
を備える半導体製造装置。 - 処理対象の基板の表面に凹部を形成し、
前記基板上に塗布膜を形成して、前記凹部内に前記塗布膜を埋め込み、
酸化剤を含む雰囲気中で、前記塗布膜にマイクロ波を照射せずに前記塗布膜を加熱する熱処理を行い、
前記熱処理後の前記塗布膜を、極性分子を含む液体または気体にさらした後にまたはさらしながら、前記塗布膜にマイクロ波を照射する、
ことを含む半導体装置の製造方法。 - 処理対象の基板をチャンバ内に移送するための基板移送室と、
前記基板移送室に連通されており、酸化剤を含む雰囲気中で、前記基板上に形成された塗布膜にマイクロ波を照射せずに前記塗布膜を加熱する第1のチャンバと、
前記基板移送室に連通されており、前記塗布膜を、極性分子を含む液体または気体にさらす第2のチャンバと、
前記基板移送室に連通されており、前記液体または前記気体にさらされた前記塗布膜にマイクロ波を照射する第3のチャンバと、
を備える半導体製造装置。
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US10242989B2 (en) | 2014-05-20 | 2019-03-26 | Micron Technology, Inc. | Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods |
JP6596285B2 (ja) | 2015-09-24 | 2019-10-23 | 東芝メモリ株式会社 | マイクロ波照射装置および基板処理方法 |
JP6752249B2 (ja) * | 2018-03-27 | 2020-09-09 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
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JP3638778B2 (ja) * | 1997-03-31 | 2005-04-13 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
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US7943531B2 (en) * | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
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