JP5981206B2 - 半導体装置の製造方法および半導体製造装置 - Google Patents
半導体装置の製造方法および半導体製造装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 229920001709 polysilazane Polymers 0.000 claims description 88
- 238000010438 heat treatment Methods 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 54
- 239000011248 coating agent Substances 0.000 claims description 46
- 238000000576 coating method Methods 0.000 claims description 46
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 239000007788 liquid Substances 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 7
- 239000007800 oxidant agent Substances 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 37
- 229910052814 silicon oxide Inorganic materials 0.000 description 37
- 238000002955 isolation Methods 0.000 description 35
- 238000000137 annealing Methods 0.000 description 31
- 238000000034 method Methods 0.000 description 23
- 238000011282 treatment Methods 0.000 description 18
- 238000007654 immersion Methods 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000006200 vaporizer Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Description
図1は、第1実施形態の半導体装置の構造を示す平面図である。図1の半導体装置は、NANDフラッシュメモリに相当する。
次に、図3〜図6を参照し、第1実施形態の半導体装置の製造方法を説明する。
まず、水蒸気を含む雰囲気中でポリシラザン膜3bを加熱する第1の熱処理を行う。第1の熱処理では例えば、ランプアニールまたはレーザーアニールが行われる。また、第1の熱処理では、ポリシラザン膜3bを例えば200〜400℃(例えば280℃または300℃)で加熱する。
次に、半導体基板1を30〜90℃の温水中に浸漬させ、ポリシラザン膜3bを温水にさらす。その結果、ポリシラザン膜3bは、水分子を含んだ状態となる。水分子は、本開示の極性分子の例である。次に、硫酸と過酸化水素を含有する薬液と、コリンと過酸化水素と水を含有する薬液とを用いてポリシラザン膜3bを処理し、ポリシラザン膜3b中の不純物を除去する。次に、ポリシラザン膜3b中に水分子が残る程度に、ポリシラザン膜3bの表面を乾燥させる。
次に、水分子を含んだ状態のポリシラザン膜3bにマイクロ波を照射することで、ポリシラザン膜3bを加熱する第2の熱処理を行う。マイクロ波は、300MHz〜3THzの周波数(100μm〜1mの波長)を有する電磁波と規定されている。第2の熱処理では例えば、10〜1000W/cm2のパワーで、5〜50SlmのN2ガスまたはO2ガスを流しながら、5.80GHzのマイクロ波を30秒〜60分間照射する。また、第2の熱処理では、ポリシラザン膜3bを例えば200〜500℃(例えば430℃)で加熱する。
次に、図7を参照し、第1実施形態のシリコン酸化膜3cのエッチングレートについて説明する。
次に、図9を参照し、第1実施形態の半導体製造装置について説明する。
最後に、第1実施形態の効果について説明する。
図11は、第2実施形態の半導体製造装置の構造を示す概略図である。
3a:素子分離溝、3b:ポリシラザン膜、3c:シリコン酸化膜、
4:第1絶縁膜、5:第1電極層、6:第2絶縁膜、7:第2電極層、
8:層間絶縁膜、9:拡散層、11:ハードマスク層、12:ハードマスク層、
13:エアギャップ、14:保護絶縁膜、
21:インタフェース部、22:ポート、23:基板移送室、
24:液体処理チャンバ、25:マイクロ波アニールチャンバ、
26:アニールチャンバ、31:半導体ウェハ、
41:半導体基板、42:素子分離絶縁膜、43:ゲート絶縁膜、
44:ゲート電極、45:側壁絶縁膜、46:ソース/ドレイン拡散層、
47:層間絶縁膜、51:ベーパライザ
Claims (7)
- 処理対象の基板の表面に凹部を形成し、
前記基板上に塗布膜を形成して、前記凹部内に前記塗布膜を埋め込み、
酸化剤を含む雰囲気中で、前記塗布膜にマイクロ波を照射せずに前記塗布膜を加熱する第1の熱処理を行い、
前記第1の熱処理後の前記塗布膜を、極性分子を含む液体または気体にさらした後にまたはさらしながら、前記塗布膜にマイクロ波を照射することで前記塗布膜を加熱する第2の熱処理を行う、
ことを含む半導体装置の製造方法。 - 前記酸化剤は水蒸気である、請求項1に記載の半導体装置の製造方法。
- 前記塗布膜はポリシラザン膜である、請求項1または2に記載の半導体装置の製造方法。
- 前記第2の熱処理では、前記塗布膜を200〜500℃で加熱する、請求項1から3のいずれか1項に記載の半導体装置の製造方法。
- 処理対象の基板をチャンバ内に移送するための基板移送室と、
前記基板移送室に連通されており、酸化剤を含む雰囲気中で、前記基板上に形成された塗布膜にマイクロ波を照射せずに前記塗布膜を加熱する第1のチャンバと、
前記基板移送室に連通されており、前記塗布膜を、極性分子を含む液体または気体にさらす第2のチャンバと、
前記基板移送室に連通されており、前記液体または前記気体にさらされた前記塗布膜にマイクロ波を照射することで、前記塗布膜を加熱する第3のチャンバと、
を備える半導体製造装置。 - 処理対象の基板の表面に凹部を形成し、
前記基板上に塗布膜を形成して、前記凹部内に前記塗布膜を埋め込み、
酸化剤を含む雰囲気中で、前記塗布膜にマイクロ波を照射せずに前記塗布膜を加熱する熱処理を行い、
前記熱処理後の前記塗布膜を、極性分子を含む液体または気体にさらした後にまたはさらしながら、前記塗布膜にマイクロ波を照射する、
ことを含む半導体装置の製造方法。 - 処理対象の基板をチャンバ内に移送するための基板移送室と、
前記基板移送室に連通されており、酸化剤を含む雰囲気中で、前記基板上に形成された塗布膜にマイクロ波を照射せずに前記塗布膜を加熱する第1のチャンバと、
前記基板移送室に連通されており、前記塗布膜を、極性分子を含む液体または気体にさらす第2のチャンバと、
前記基板移送室に連通されており、前記液体または前記気体にさらされた前記塗布膜にマイクロ波を照射する第3のチャンバと、
を備える半導体製造装置。
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US10242989B2 (en) * | 2014-05-20 | 2019-03-26 | Micron Technology, Inc. | Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods |
JP6596285B2 (ja) | 2015-09-24 | 2019-10-23 | 東芝メモリ株式会社 | マイクロ波照射装置および基板処理方法 |
JP6752249B2 (ja) | 2018-03-27 | 2020-09-09 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
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JP3638778B2 (ja) * | 1997-03-31 | 2005-04-13 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
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JP2005150500A (ja) * | 2003-11-18 | 2005-06-09 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
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JP5100077B2 (ja) * | 2006-10-04 | 2012-12-19 | 敏夫 寺中 | シリカ膜の製造方法 |
JP2009076638A (ja) * | 2007-09-20 | 2009-04-09 | Toshiba Corp | 半導体装置の製造方法 |
US7943531B2 (en) * | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
JP2010137372A (ja) * | 2008-12-09 | 2010-06-24 | Contamination Control Service:Kk | 複合膜、およびその形成方法 |
JP2010153458A (ja) | 2008-12-24 | 2010-07-08 | Toshiba Corp | 半導体装置の製造方法および半導体装置 |
JP4987898B2 (ja) * | 2009-03-27 | 2012-07-25 | 株式会社東芝 | 半導体装置の製造方法 |
JP2010258057A (ja) | 2009-04-22 | 2010-11-11 | Konica Minolta Holdings Inc | 金属酸化物半導体、その製造方法、及びそれを用いた薄膜トランジスタ |
JP5421664B2 (ja) * | 2009-06-15 | 2014-02-19 | 有限会社コンタミネーション・コントロール・サービス | 炭化水素系化合物の貯蔵又は移送用の被覆成形品 |
JP2011066052A (ja) | 2009-09-15 | 2011-03-31 | Toshiba Corp | 半導体装置の製造方法および半導体装置 |
JP5072929B2 (ja) | 2009-09-22 | 2012-11-14 | 株式会社東芝 | 加熱装置 |
JP2011097029A (ja) * | 2009-09-30 | 2011-05-12 | Tokyo Electron Ltd | 半導体装置の製造方法 |
US20110151677A1 (en) * | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
JP2012182312A (ja) * | 2011-03-01 | 2012-09-20 | Toshiba Corp | 半導体装置の製造方法 |
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