JPS62104438U - - Google Patents

Info

Publication number
JPS62104438U
JPS62104438U JP1985197957U JP19795785U JPS62104438U JP S62104438 U JPS62104438 U JP S62104438U JP 1985197957 U JP1985197957 U JP 1985197957U JP 19795785 U JP19795785 U JP 19795785U JP S62104438 U JPS62104438 U JP S62104438U
Authority
JP
Japan
Prior art keywords
light
light source
reaction chamber
transmitting windows
rotating plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1985197957U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985197957U priority Critical patent/JPS62104438U/ja
Publication of JPS62104438U publication Critical patent/JPS62104438U/ja
Priority to US07/245,936 priority patent/US4836140A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488—Protection of windows for introduction of radiation into the coating chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Description

【図面の簡単な説明】
第１図は本考案の実施例を示す略断面図、第２
図は同実施例の要部を示す平面図、第３図は第２
図のＡ―Ａ線に沿う拡大断面図、第４及び第５図
はそれぞれ従来例を示す略断面図である。 １……反応室、５……光源、７……光透過窓、
１０……回転板。

Claims (1)

  1. 【実用新案登録請求の範囲】 光ＣＶＤ反応室内に光を照射できる位置に配設
    された光源と、 この光源の照射面に対向し上記光源と反応室と
    を仕切るための光透過窓が複数個設けられた回転
    板とを具え、 上記回転板を回転することにより上記光透過窓
    の１つが上記光源の照射面に対向すると共に残り
    の上記光透過窓が上記反応室の外に出るように構
    成された光ＣＶＤ装置。
JP1985197957U 1985-12-23 1985-12-23 Pending JPS62104438U (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1985197957U JPS62104438U (ja) 1985-12-23 1985-12-23
US07/245,936 US4836140A (en) 1985-12-23 1988-09-16 Photo-CVD apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985197957U JPS62104438U (ja) 1985-12-23 1985-12-23

Publications (1)

Publication Number Publication Date
JPS62104438U true JPS62104438U (ja) 1987-07-03

Family

ID=16383124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985197957U Pending JPS62104438U (ja) 1985-12-23 1985-12-23

Country Status (2)

Country Link
US (1) US4836140A (ja)
JP (1) JPS62104438U (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141578A (ja) * 1988-11-24 1990-05-30 Canon Inc 堆積膜形成装置
JPH03277774A (ja) * 1990-03-27 1991-12-09 Semiconductor Energy Lab Co Ltd 光気相反応装置
JP3002013B2 (ja) * 1991-06-04 2000-01-24 松下技研株式会社 薄膜および多層膜の製造方法およびその製造装置
US5309063A (en) * 1993-03-04 1994-05-03 David Sarnoff Research Center, Inc. Inductive coil for inductively coupled plasma production apparatus
KR0167827B1 (ko) * 1996-02-06 1999-01-15 이종훈 광학창 교체장치가 구비된 광화학기상증착장치 및 광학창 교체방법
US5849371A (en) * 1996-07-22 1998-12-15 Beesley; Dwayne Laser and laser-assisted free electron beam deposition apparatus and method
KR100292053B1 (ko) 1998-03-30 2001-11-30 김영환 반도체제조용식각장치의엔드포인트윈도우
US6187133B1 (en) 1998-05-29 2001-02-13 Applied Materials, Inc. Gas manifold for uniform gas distribution and photochemistry
JP4232330B2 (ja) * 2000-09-22 2009-03-04 東京エレクトロン株式会社 励起ガス形成装置、処理装置及び処理方法
JP5079949B2 (ja) * 2001-04-06 2012-11-21 東京エレクトロン株式会社 処理装置および処理方法
KR100432513B1 (ko) * 2001-09-11 2004-05-22 한국과학기술원 광여기 공정 장치 및 방법
US6863772B2 (en) * 2002-10-09 2005-03-08 Taiwan Semiconductor Manufacturing Co., Ltd Dual-port end point window for plasma etcher
US7351656B2 (en) * 2005-01-21 2008-04-01 Kabushiki Kaihsa Toshiba Semiconductor device having oxidized metal film and manufacture method of the same
DE102013100443A1 (de) * 2012-08-14 2014-05-15 Carl Zeiss Microscopy Gmbh Schutzfenstervorrichtung für eine Beschichtungsanlage
CN103046026B (zh) * 2012-12-25 2014-12-31 王奉瑾 采用光加热的cvd设备
JP6147168B2 (ja) * 2013-11-18 2017-06-14 株式会社神戸製鋼所 成膜装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052014A (ja) * 1983-08-31 1985-03-23 Mitsubishi Electric Corp 半導体製造装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129772A (ja) * 1983-01-18 1984-07-26 Ushio Inc 光化学蒸着装置
JPS59222922A (ja) * 1983-06-01 1984-12-14 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
US4500565A (en) * 1983-09-28 1985-02-19 Ushio Denki Kabushiki Kaisha Deposition process
JPS60128265A (ja) * 1983-12-14 1985-07-09 Nec Corp 気相薄膜形成装置
US4534314A (en) * 1984-05-10 1985-08-13 Varian Associates, Inc. Load lock pumping mechanism
US4595601A (en) * 1984-05-25 1986-06-17 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer
JPH0652014A (ja) * 1992-07-29 1994-02-25 Fujitsu Ltd システムダウン回避方式

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052014A (ja) * 1983-08-31 1985-03-23 Mitsubishi Electric Corp 半導体製造装置

Also Published As

Publication number Publication date
US4836140A (en) 1989-06-06

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