DE3687059D1 - Herstellung einer fluessigmetallionenquelle. - Google Patents

Herstellung einer fluessigmetallionenquelle.

Info

Publication number
DE3687059D1
DE3687059D1 DE8686903721T DE3687059T DE3687059D1 DE 3687059 D1 DE3687059 D1 DE 3687059D1 DE 8686903721 T DE8686903721 T DE 8686903721T DE 3687059 T DE3687059 T DE 3687059T DE 3687059 D1 DE3687059 D1 DE 3687059D1
Authority
DE
Germany
Prior art keywords
production
metal ion
ion source
liquid metal
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686903721T
Other languages
English (en)
Other versions
DE3687059T2 (de
Inventor
B Jergenson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DirecTV Group Inc
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3687059D1 publication Critical patent/DE3687059D1/de
Publication of DE3687059T2 publication Critical patent/DE3687059T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
DE8686903721T 1985-04-08 1986-03-27 Herstellung einer fluessigmetallionenquelle. Expired - Fee Related DE3687059T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/721,336 US4617203A (en) 1985-04-08 1985-04-08 Preparation of liquid metal source structures for use in ion beam evaporation of boron-containing alloys
PCT/US1986/000612 WO1986006210A1 (en) 1985-04-08 1986-03-27 Manufacture of liquid metal ion source

Publications (2)

Publication Number Publication Date
DE3687059D1 true DE3687059D1 (de) 1992-12-10
DE3687059T2 DE3687059T2 (de) 1993-05-19

Family

ID=24897564

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686903721T Expired - Fee Related DE3687059T2 (de) 1985-04-08 1986-03-27 Herstellung einer fluessigmetallionenquelle.

Country Status (5)

Country Link
US (1) US4617203A (de)
EP (1) EP0217951B1 (de)
JP (1) JPS62502154A (de)
DE (1) DE3687059T2 (de)
WO (1) WO1986006210A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685309B2 (ja) * 1985-12-13 1994-10-26 株式会社日立製作所 液体金属イオン源
FR2722333B1 (fr) * 1994-07-07 1996-09-13 Rech Scient Snrs Centre Nat De Source d'ions de metaux liquides
TW445522B (en) * 1998-02-09 2001-07-11 United Microelectronics Corp Dual ion/electron source device and its operation method
US6265722B1 (en) 1999-08-31 2001-07-24 Micron Technology, Inc. Organic field ionization source
JP2003257330A (ja) * 2002-03-06 2003-09-12 Jeol Ltd 集束イオンビーム装置
US6914386B2 (en) * 2003-06-20 2005-07-05 Applied Materials Israel, Ltd. Source of liquid metal ions and a method for controlling the source
US7084408B1 (en) * 2003-10-29 2006-08-01 Lsi Logic Corporation Vaporization and ionization of metals for use in semiconductor processing
US7323228B1 (en) 2003-10-29 2008-01-29 Lsi Logic Corporation Method of vaporizing and ionizing metals for use in semiconductor processing
US10672602B2 (en) 2014-10-13 2020-06-02 Arizona Board Of Regents On Behalf Of Arizona State University Cesium primary ion source for secondary ion mass spectrometer
US9941089B2 (en) 2014-10-13 2018-04-10 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Cesium primary ion source for secondary ion mass spectrometer

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1922254A (en) * 1926-05-20 1933-08-15 Westinghouse Electric & Mfg Co Thermionic tube electrode
US2659685A (en) * 1950-03-31 1953-11-17 Gen Electric Boride cathodes
US2996412A (en) * 1958-10-10 1961-08-15 Continental Can Co Art of depositing metals
US3369920A (en) * 1964-11-24 1968-02-20 Union Carbide Corp Process for producing coatings on carbon and graphite filaments
US3503118A (en) * 1964-12-14 1970-03-31 Union Carbide Corp Oxidation resistant graphite composite article
FR1526317A (fr) * 1967-04-14 1968-05-24 Lorraine Carbone Perfectionnement à l'imprégnation d'un matériau à base de carbone par les métaux fondus
US3929674A (en) * 1974-06-03 1975-12-30 Du Pont Boride-containing metallizations
CA1095387A (en) * 1976-02-17 1981-02-10 Conrad M. Banas Skin melting
JPS57132632A (en) * 1981-02-09 1982-08-17 Hitachi Ltd Ion source
JPS5878557U (ja) * 1981-11-24 1983-05-27 株式会社日立製作所 電界放出型イオン源
JPS59119660A (ja) * 1982-12-27 1984-07-10 Hitachi Ltd 液体金属イオン源
JPS59191225A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 液体金属イオン種合金

Also Published As

Publication number Publication date
DE3687059T2 (de) 1993-05-19
US4617203A (en) 1986-10-14
EP0217951B1 (de) 1992-11-04
EP0217951A1 (de) 1987-04-15
JPS62502154A (ja) 1987-08-20
JPH0544770B2 (de) 1993-07-07
WO1986006210A1 (en) 1986-10-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HUGHES ELECTRONICS CORP., EL SEGUNDO, CALIF., US

8339 Ceased/non-payment of the annual fee